CN203180800U - Twice boost high-voltage pulse power - Google Patents
Twice boost high-voltage pulse power Download PDFInfo
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- CN203180800U CN203180800U CN 201320179682 CN201320179682U CN203180800U CN 203180800 U CN203180800 U CN 203180800U CN 201320179682 CN201320179682 CN 201320179682 CN 201320179682 U CN201320179682 U CN 201320179682U CN 203180800 U CN203180800 U CN 203180800U
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- 230000001681 protective effect Effects 0.000 claims description 15
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 238000001914 filtration Methods 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 239000002159 nanocrystal Substances 0.000 claims description 4
- 239000003990 capacitor Substances 0.000 claims description 3
- 229920002379 silicone rubber Polymers 0.000 claims description 3
- 239000003381 stabilizer Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- 229910000976 Electrical steel Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N ferric oxide Chemical compound O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
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Abstract
The utility model discloses a twice boost high-voltage pulse power, including a main circuit and a control circuit; wherein 220V alternating current of the main circuit is successively connected with a rectifier circuit, a filter circuit, a Boost circuit, an inverter circuit, a pulse transformer and a pulse rectifier circuit, and high voltage pulse is output by the pulse rectifier circuit. Three ways of PWM signals emitted by a DSP system in the control circuit are respectively connected with three drive circuits through respective PWM amplifying circuit. One way of the PWM signal is used for controlling IGBT in the Boost circuit. The other two ways of PWM signals are used for controlling IGBT in the inverter circuit. The Boost circuit and the inverter circuit are provided with an IGBT protection circuit. When the IGBT fails, fault signals are input in to DSP through the IGBT protection circuit and DSP immediately breaks off the PWM signal emmission, so that the IGBT is turned off, thereby protecting the whole system.
Description
Technical field
The utility model relates to a kind of high-voltage pulse power source, especially relates to a kind of high-voltage pulse power source of twice boost type.
Background technology
Pulse power has such characteristics: it is the form of energy stored with electric energy, is added in the load with the short pulse mode of pulse or repetition rate.The reason that Pulse Power Techniques successfully are applied to a lot of fields be it can obtain additive method the effect that can not reach or be difficult to reach.
After the Great War for the second time, Pulse Power Techniques constantly make progress under the promotion of Military Application demand, mainly are the development of pulse power weapon and the exploitation of simulation and diagnostic tool.Pulse Power Techniques in recent years are widely used in a series of military projects, the energy, material, biological fields such as radar transmitter, high-pressure pulse electric sterilization, the fragmentation of insulating material electric pulse.
Present most of high voltage pulse equipment all is that the method that adopts pulse transformer to boost realizes, the circuit structure basically identical, and difficult point is the coiling of transformer, and the impulse waveform behind the bringing onto load is not very desirable.This method has its limitation: pulsewidth is limited by magnetic hysteresis, and power is subjected to magnetic core heating restriction, so power is generally less, and the pulsewidth adjustable extent is narrow.
Nanocrystalline, amorphous soft magnet magnetic core, have good comprehensive magneto-electric behaviors such as high magnetic flux density, high magnetic permeability, low core loss and high frequency characteristics be good, has the higher ratio of performance to price than conventional soft magnetic materials such as ferrite, silicon steel and permalloys, be widely used in the update of high-new industries such as modern communication, power electronics, electromagnetic compatibility, transducer and various industrial magnetic device products, be specially adapted to miniaturization, high frequencyization and the high efficiency design of inductance and power transformer product, have very bright development prospect.
Model is that the dsp system of TMS320F28335 is a TMS320C28X series Floating-point DSP controller of TI company.Compare with fixed DSP in the past, the precision height of this device, cost is low, and power consumption is little, the performance height, peripheral hardware integrated level height, data and procedure stores amount are big, and A/D conversion is more accurate fast etc., and the floating controller of the dsp system of this model is compared with the leading digital signal controller of TI former generation, performance on average improves 50%, and 32 the fixed point technology suitable with effect are compared, and fast fourier transform complicated calculations algorithms such as (FFT) has been employed new technology the back performance boost one times more than.
Summary of the invention
The purpose of this utility model is to provide a kind of high-voltage pulse power source generation circuit of twice boost type, and this circuit can be realized boosting for twice of voltage, exports the unipolarity high-voltage pulse about 40kV at last.
For achieving the above object, the utility model adopts following technical scheme:
The utility model comprises main circuit and control circuit, wherein:
1) main circuit: comprise rectification circuit, filter circuit, Boost circuit, inverter circuit, buffer circuit, pulse transformer and impulse commutation circuit; The 220V alternating current is connected with rectification circuit, filter circuit, Boost circuit, inverter circuit, pulse transformer and impulse commutation circuit successively, and by impulse commutation circuit output high-voltage pulse, inverter circuit also is connected with buffer circuit at last;
2) control circuit: comprise dsp system, three PWM amplifying circuits, three IGBT drive circuits and IGBT protective circuit; Dsp system sends three road pwm signals, by linking to each other with separately IGBT drive circuit behind the PWM amplifying circuit separately, one road pwm signal is used for the IGBT of control Boost circuit, and the two-way pwm signal is respectively applied to control in the inverter circuit IGBT on two brachium pontis in addition; Be connected the IGBT protective circuit between Boost circuit and inverter circuit and the dsp system.
Rectification circuit in the described main circuit carries out rectification with four rectifier diode D1～D4, receives filter circuit again; Filter circuit carries out filtering with electrochemical capacitor C1, the C2 of two parallel connections; Shu Chu direct current links to each other with the Boost circuit thus, once boosts; Switching tube in the Boost circuit is made up of the IGBT Q1～Q4 of four series connection; The direct current of Boost circuit output is connected to inverter circuit as its power supply; Inverter circuit is made up of 8 IGBT, 4 IGBT Q5 wherein, and Q6, Q9 and Q10 constitute a brachium pontis, and remaining four IGBT Q7, Q8, Q11 and Q12 constitute another brachium pontis, and the IGBT in the inverter circuit is provided with buffer circuit; The output of inverter circuit links to each other with the elementary of pulse transformer, carries out secondary booster; Pulse transformer is to be composed in series by n iron based nano crystal magnet ring, and the elementary of each magnet ring is independently, links to each other with the output of inverter circuit respectively, and secondary is that the silicon rubber line of 50kV is connected in series with withstand voltage; The voltage of the secondary output of pulse transformer is by the unipolar high-voltage pulse of output behind the impulse commutation circuit.
Three road pwm signals that dsp system in the described control circuit sends are respectively PWM1, PWM2 and PWM3; PWM1, PWM2 and PWM3 are optocoupler U1, the U10 of TLP250 and U19 by model respectively to carry out signal and amplifies, again by separately optocoupler 6 pin output; The PWM1 signal links to each other with first IGBT drive circuit as the control signal of IGBTQ1, Q2, Q3 and the Q4 of four series connection in the Boost circuit; First IGBT drive circuit is made up of driving chip U3, U5, U7 and U9 and peripheral circuit thereof that four models are M57962L; 14 pin that drive chip U3 link to each other with 6 pin of optocoupler U1 by resistance R 11,13 pin that drive chip U3 link to each other with 14 pin that drive chip U5,13 pin that drive chip U5 link to each other with 14 pin that drive chip U7, and 13 pin that drive chip U7 link to each other with 14 pin that drive chip U9; 13 pin that drive chip U9 link to each other with 5 pin of optocoupler U1; Each drives chip two power supplies, and voltage swing is respectively 15V and 10V; The negative pole of 15V power supply links to each other with the positive pole of 10V power supply, and the positive pole of 15V power supply is received 4 pin that drive chip, and the negative pole of 10V power supply is received 6 pin that drive chip; Each 4 pin that drive chip is that 1 pin of the optocoupler of TLP521-1 links to each other by current-limiting resistance and corresponding model, and 8 pin of driving chip link to each other with 2 pin of corresponding optocoupler; PWM2 and PWM3 signal are respectively as the control signal of 8 IGBT on two brachium pontis in the inverter circuit, the PWM2 signal is as 4 IGBT Q5, Q6 of one of them brachium pontis in the inverter circuit, the control signal of Q9, Q10, link to each other with second IGBT drive circuit, second drive circuit is made up of driving chip U12, U14, U16 and U18 and peripheral circuit thereof that four models are M57962L, and the connection that drives chip U12, U14, U16, U18 is identical with the connection that drives chip U3, U5, U7, U9; The PWM3 signal is as four IGBT Q7, Q8 of another brachium pontis in the inverter circuit, the control signal of Q11, Q12, link to each other with the 3rd IGBT drive circuit, the 3rd drive circuit is made up of driving chip U21, U23, U25, U27 and peripheral circuit thereof that four models are M57962L, and the connection that drives chip U21, U23, U25, U27 is identical with the connection that drives chip U3, U5, U7, U9; Each drives chip M57962L three outputs, first output is 1 pin of M57962L, link to each other with the collector electrode of corresponding IGBT with diode by voltage-stabiliser tube, second output is 5 pin of M57962L, link to each other with the grid of corresponding IGBT by resistance, the 3rd output is two power supply junctions of M57962L, links to each other with the emitter of corresponding IGBT; The IGBT protective circuit is that four inputs of CD4072 or door chip U28, model are that eight inputs of CD4078 or door chip U29 and model are that CD4071 two inputs or a door chip U30 form by model; IGBT Q1, Q2, Q3, the fault-signal of Q4 is by optocoupler U2, U4, U6, the 3 pin output of U8, respectively as the input signal of four inputs or door chip U28, IGBTQ5, Q6, Q9, Q10, Q7, Q8, Q11, the fault-signal of Q12 is respectively by optocoupler U11, U13, U15, U17, U20, U22, U24, the 3 pin output of U26, respectively as the input signal of eight inputs or door chip U29, or 1 pin of door chip U28 and or the signal of the 1 pin output of door chip U29 respectively as the input signal of two inputs or door chip U30, or the output signal of 3 pin of door chip U30 is received dsp system.
The beneficial effect that the utlity model has is:
1, adopts the method for boosting for twice to produce high-voltage pulse, after rectification, filtering, utilize the Boost circuit once to boost, improved the input voltage of primary, can effectively reduce the number of the pulse transformer of series connection, to reduce the volume of whole system.
2, utilize the pulse transformer of the secondary mode coiling that is connected in series of a plurality of iron based nano crystal magnet rings, can reduce the requirement to transformer efficiency greatly, and compared to traditional with the pulse transformer of conventional materials such as ferrite as the magnetic core coiling, can significantly reduce umber of turn, realize the miniaturization of transformer.
3, the control signal of Boost circuit and inverter circuit is all sent by dsp system, can reduce high-voltage pulse to the interference of pwm control signal.
4, each IGBT is provided with protective circuit, can gather the fault-signal of each IGBT in real time, and feed back to dsp system, makes dsp system interrupt sending of pwm signal immediately, in time turn-offs IGBT, thereby protects whole high-voltage pulse power source system effectively.
5, Boost circuit and inverter circuit all adopt mode that a plurality of IGBT are connected in series as on-off action, can solve the limited problem of single IGBT withstand voltage.
Description of drawings
Fig. 1 is system architecture diagram of the present utility model.
Fig. 2 is main circuit diagram of the present utility model.
Fig. 3 is pulse transformer connected mode figure of the present utility model.
Fig. 4 is the IGBT drive circuit figure of Boost circuit in the utility model control unit.
Fig. 5 is the IGBT drive circuit figure of a brachium pontis of inverter circuit in the utility model control unit.
Fig. 6 is the IGBT drive circuit figure of another brachium pontis of inverter circuit in the utility model control unit.
Fig. 7 is the IGBT protective circuit figure in the utility model control unit.
Embodiment
Below in conjunction with drawings and Examples, the utility model is further described.
As shown in Figure 1, the utility model comprises main circuit and control circuit, wherein:
1) main circuit: comprise rectification circuit, filter circuit, Boost circuit, inverter circuit, buffer circuit, pulse transformer and impulse commutation circuit.The alternating current of 220V once boosts by the Boost circuit after rectification and filtering, connects the elementary of inverter circuit and pulse transformer more successively, carries out secondary booster, and the output of transformer secondary output produces high-voltage pulse through behind the impulse commutation.
2) control circuit: comprise dsp system, PWM amplifying circuit, drive circuit and protective circuit.Three road pwm signals that dsp system sends, by linking to each other with separately IGBT drive circuit behind the PWM amplifying circuit separately, one road pwm signal be used for to drive the IGBT of Boost circuit, and the two-way pwm signal is respectively applied to drive in the inverter circuit IGBT on two brachium pontis in addition; Be connected the IGBT protective circuit between Boost circuit and inverter circuit and the dsp system.When any one IGBT in Boost circuit and the inverter circuit breaks down, by protective circuit fault-signal is imported DSP, DSP interrupts sending of pwm signal immediately, makes IGBT be in off state, thus the protection whole system.IGBT wherein is insulated gate electrode pair transistor (Insulated Gate Bipolar Transistor).
As shown in Figure 2, the rectification circuit in the utility model main circuit carries out rectification with four rectifier diode D1～D4, receives filter circuit again; Filter circuit carries out filtering with electrochemical capacitor C1, the C2 of two parallel connections; Exportable size is the direct voltage about 300V thus, and this voltage once boosts as the input voltage of Boost circuit; Switching tube in the Boost circuit is by IGBT Q1, the Q2 of 4 series connection, and Q3, Q4 form, and model is K40T1202; The direct current of Boost circuit output is connected to inverter circuit as its power supply; Inverter circuit is by 8 IGBT Q5, Q6, Q7, Q8, Q9, Q10, Q11, Q12 form, four IGBT Q5 wherein, Q6, Q9, Q10 constitute a brachium pontis, other four IGBT Q7, Q8, Q11, Q12 constitute another brachium pontis, the model of IGBT is G60T120, and the IGBT of this model is inner integrated diode can be done afterflow and use; Each IGBT is connected to the RCD buffer circuit, can effectively suppress overvoltage, the over-current phenomenon avoidance of IGBT, and reduces switching loss; Inverter circuit is converted into the positive and negative bipolar pulse that replaces with the output voltage of Boost circuit, links to each other with the elementary of pulse transformer again, carries out secondary booster; The bipolarity high-voltage pulse of the secondary output of pulse transformer is received the impulse commutation circuit again, and this circuit is made up of a plurality of rectifier diode D14～Dn and protective resistance R1, and halfwave rectifier is carried out in bipolar pulse, exports the unipolarity high-voltage pulse about 40kV at last.
As shown in Figure 3, pulse transformer of the present utility model is to be composed in series by n iron based nano crystal magnet ring, and the elementary of each magnet ring is independently, links to each other with the output of inverter circuit respectively, and secondary is that the silicon rubber line of 50kV is connected in series with withstand voltage.
As Fig. 4, Fig. 5, shown in Figure 6, three drive circuits in the utility model control unit are respectively the drive circuit of two brachium pontis in Boost circuit and the inverter circuit.Three road pwm signals that dsp system sends are respectively PWM1, PWM2 and PWM3; The frequency of PWM1 signal is f1, and duty ratio is d1, links to each other with the drive circuit of IGBT behind the PWM amplifying circuit, is used for IGBT Q1, the Q2 of control Boost circuit, and the break-make of Q3, Q4 realizes once boosting of circuit; The frequency of PWM2 and PWM3 is f2, duty ratio is d2, the difference of injection time of PWM2 and PWM3 is 1/ (2*f2), respectively by linking to each other with separately IGBT drive circuit behind the PWM amplifying circuit separately, be respectively applied to control four IGBT Q5 of one of them brachium pontis in the inverter circuit, four IGBTQ7, Q8 of Q6, Q9, Q10 and another brachium pontis, the break-make of Q11, Q12.
As Fig. 4, Fig. 5, shown in Figure 6, three drive circuits of Boost circuit of the present utility model and inverter circuit have identical circuit structure, and each drive circuit is made up of special driving chip M57962L and the peripheral circuit thereof of IGBT.All passing through resistance R 11 after the PWM1 signal amplifies by optocoupler TLP250 links to each other with 14 pin of first M57962L, 13 pin of first M57962L link to each other with 14 pin of second M57962L, 13 pin of second M57962L link to each other with 14 pin of the 3rd M57962L, 13 pin of the 3rd M57962L link to each other with 14 pin of the 4th M57962L, 13 pin of the 4th M57962L are received 5 pin of corresponding TLP520 again, realize being connected in series of four M57962L in each drive circuit with this; Each M57962L adopts dual power supply, and size is respectively 15V and 10V; Each drives chip M57962L three outputs, first output is 1 pin of M57962L, the over-current detection circuit of forming by voltage-stabiliser tube and diode links to each other with the collector electrode of corresponding IGBT, second output is 5 pin of M57962L, link to each other with the grid of corresponding IGBT by resistance, the 3rd output is two power supply junctions of M57962L, links to each other with the emitter of corresponding IGBT.
As shown in Figure 6, the IGBT protective circuit is that four inputs of CD4072 or door chip U28, model are that eight inputs of CD4078 or door chip U29 and model are that CD4071 two inputs or a door chip U30 form by model; Q1, Q2, Q3, the fault-signal of Q4 is by optocoupler U2, U4, U6, the 3 pin output of U8, respectively as the input signal of four inputs or door chip U28,2 pin with U28,3 pin, 4 pin, 5 pin link to each other, Q5, Q6, Q9, Q10, Q7, Q8, Q11, the fault-signal of Q12 is respectively by optocoupler U11, U13, U15, U17, U20, U22, U24, the 3 pin output of U26, respectively as the input signal of eight inputs or door chip U29,2 pin with U29,3 pin, 4 pin, 5 pin, 9 pin, 10 pin, 11 pin, 12 pin link to each other, the signal of 1 pin of U28 and 1 pin of U29 output is respectively as the input signal of two inputs or door chip U30,1 pin with U30,2 pin link to each other, and the signal of the 3 pin output of U30 is received dsp system.As Q1, Q2; Q3, Q4, Q5; Q6, Q9, Q10, Q7, Q8, Q11, Q12 are during operate as normal; be input to dsp system for low level, when wherein any one IGBT breaks down, corresponding optocoupler TLP521-1 work; finally be input to the high level that is of dsp system; dsp system will interrupt sending of three road pwm signals immediately, turn off all IGBT, thereby protect whole power-supply system.
The course of work of the present utility model is as follows:
The alternating current of 220V becomes the direct current about 300V after by rectifying and wave-filtering; this direct current is as the input voltage of Boost circuit; once boost by the Boost circuit; the direct current that obtains thus links to each other with inverter circuit again; as its power supply; the positive and negative bipolar pulse that replaces that inverter circuit output size equates with Boost circuit output voltage value; this pulse is carried out secondary booster by pulse transformer; be bipolarity high-voltage pulse about 40kV in the secondary output size of pulse transformer; after carrying out halfwave rectifier by power rectifier diode and protective resistance again, export the unipolarity high-voltage pulse about 40kV at last.
The control signal of Boost circuit and inverter circuit is that the dsp system of TMS320F28335 sends by model all.Three road pwm signals that this dsp system sends are respectively PWM1, PWM2 and PWM3, and wherein the PWM1 signal is used for the break-make of the IGBT of control Boost circuit, and PWM2 and PWM3 signal are used for the break-make of the IGBT of control inverter circuit.The frequency of PWM1 signal is f1, duty ratio is d1, this signal is amplified the back by TLP250 to be connected with the IGBT drive circuit of Boost circuit, drive IGBTQ1, Q2, Q3, the Q4 of 4 series connection in the Boost circuit, the ratio of Boost circuit output voltage and input voltage is 1/ (1-d1), by adjusting the duty ratio d1 of PWM1, can realize once boosting.The frequency of PWM2 and PWM3 is f2, duty ratio is d2, the difference of injection time of PWM2 and PWM3 is 1/ (2*f2), be respectively applied to control four IGBT Q5 of one of them brachium pontis in the inverter circuit, four IGBTQ7, Q8 of Q6, Q9, Q10 and another brachium pontis, the break-make of Q11, Q12, after amplifying by TLP250, PWM1 and PWM2 link to each other with the drive circuit of brachium pontis separately respectively, drive corresponding IGBT in the inverter circuit respectively, inverter circuit output size equates with the Boost output voltage values, positive and negative pulsewidth is d2, frequency is the bipolar pulse of f2.
The IGBT protective circuit is that four inputs of CD4072 or door chip U28, model are that eight inputs of CD4078 or door chip U29 and model are that CD4071 two inputs or a door chip U30 form by model; Q1, Q2, the fault-signal of Q3, Q4 is by the output of 3 pin of optocoupler U2, U4, U6, U8, as or the input signal of door chip CD4072, as Q1, Q2, Q3, Q4 are during operate as normal, corresponding optocoupler TLP521-1 does not work, 3 pin output low levels, or the 1 pin output low level of door chip U28, when wherein any one IGBT breaks down, corresponding optocoupler TLP521-1 starts working, 3 pin output high level, or 1 pin of door chip U28 becomes high level by low level; Q5, the fault-signal of Q6, Q9, Q10, Q7, Q8, Q11, Q12 is exported by 3 pin of optocoupler U11, U13, U15, U17, U20, U22, U24, U26 respectively, as or the input signal of door chip CD4078, work as Q5, Q6, Q9, Q10, Q7, Q8, Q11, Q12 are during operate as normal, the 1 pin output low level of chip U29, when wherein any one IGBT breaks down, corresponding optocoupler TLP521-1 starts working, 3 pin output high level, or 1 pin of door chip U29 becomes high level by low level; The signal of the signal of the 1 pin output of U28 and the 1 pin output of U29 is as the input signal of chip U30, and output 3 pin of U30 are received dsp system again; As Q1, Q2, Q3, Q4, Q5, Q6, Q9, Q10, Q7, Q8, Q11, Q12 be during operate as normal, the U30 output low level, and the signal that is input to dsp system is low level, DSP continues to send three road pwm signals, whole power-supply system operate as normal; When wherein any one IGBT breaks down; has an output high level among U28 and the U29 at least; the output of U30 will become high level by low level; the signal that is input to dsp system also becomes high level by low level; dsp system will interrupt sending of three road pwm signals immediately; turn-off all IGBT, thereby protect whole power-supply system.
Claims (3)
1. the high-voltage pulse power source of twice boost type is characterized in that, comprises main circuit and control circuit; Wherein:
1) main circuit: comprise rectification circuit, filter circuit, Boost circuit, inverter circuit, buffer circuit, pulse transformer and impulse commutation circuit; The 220V alternating current is connected with rectification circuit, filter circuit, Boost circuit, inverter circuit, pulse transformer and impulse commutation circuit successively, and by impulse commutation circuit output high-voltage pulse, inverter circuit also is connected with buffer circuit at last;
2) control circuit: comprise dsp system, three PWM amplifying circuits, three IGBT drive circuits and IGBT protective circuit; Dsp system sends three road pwm signals, by linking to each other with separately IGBT drive circuit behind the PWM amplifying circuit separately, one road pwm signal is used for the IGBT of control Boost circuit, and the two-way pwm signal is respectively applied to control in the inverter circuit IGBT on two brachium pontis in addition; Be connected the IGBT protective circuit between Boost circuit and inverter circuit and the dsp system.
2. the high-voltage pulse power source of a kind of twice boost type according to claim 1, it is characterized in that: the rectification circuit in the described main circuit carries out rectification with four rectifier diode D1～D4, receives filter circuit again; Filter circuit carries out filtering with electrochemical capacitor C1, the C2 of two parallel connections; Shu Chu direct current links to each other with the Boost circuit thus, once boosts; Switching tube in the Boost circuit is made up of the IGBT Q1～Q4 of four series connection; The direct current of Boost circuit output is connected to inverter circuit as its power supply; Inverter circuit is made up of 8 IGBT, 4 IGBT Q5 wherein, and Q6, Q9 and Q10 constitute a brachium pontis, and remaining four IGBT Q7, Q8, Q11 and Q12 constitute another brachium pontis, and the IGBT in the inverter circuit is provided with buffer circuit; The output of inverter circuit links to each other with the elementary of pulse transformer, carries out secondary booster; Pulse transformer is to be composed in series by n iron based nano crystal magnet ring, and the elementary of each magnet ring is independently, links to each other with the output of inverter circuit respectively, and secondary is that the silicon rubber line of 50kV is connected in series with withstand voltage; The voltage of the secondary output of pulse transformer is by the unipolar high-voltage pulse of output behind the impulse commutation circuit.
3. the high-voltage pulse power source of a kind of twice boost type according to claim 1, it is characterized in that: three road pwm signals that the dsp system in the described control circuit sends are respectively PWM1, PWM2 and PWM3; PWM1, PWM2 and PWM3 are optocoupler U1, the U10 of TLP250 and U19 by model respectively to carry out signal and amplifies, again by separately optocoupler 6 pin output; The PWM1 signal links to each other with first IGBT drive circuit as the control signal of IGBTQ1, Q2, Q3 and the Q4 of four series connection in the Boost circuit; First IGBT drive circuit is made up of driving chip U3, U5, U7 and U9 and peripheral circuit thereof that four models are M57962L; 14 pin that drive chip U3 link to each other with 6 pin of optocoupler U1 by resistance R 11,13 pin that drive chip U3 link to each other with 14 pin that drive chip U5,13 pin that drive chip U5 link to each other with 14 pin that drive chip U7,13 pin that drive chip U7 link to each other with 14 pin that drive chip U9, and 13 pin that drive chip U9 link to each other with 5 pin of optocoupler U1; Each drives chip two power supplies, and voltage swing is respectively 15V and 10V; The negative pole of 15V power supply links to each other with the positive pole of 10V power supply, and the positive pole of 15V power supply is received 4 pin that drive chip, and the negative pole of 10V power supply is received 6 pin that drive chip; Each 4 pin that drive chip is that 1 pin of the optocoupler of TLP521-1 links to each other by current-limiting resistance and corresponding model, and 8 pin of driving chip link to each other with 2 pin of corresponding optocoupler; PWM2 and PWM3 signal are respectively as the control signal of 8 IGBT on two brachium pontis in the inverter circuit, the PWM2 signal is as 4 IGBT Q5, Q6 of one of them brachium pontis in the inverter circuit, the control signal of Q9, Q10, link to each other with second IGBT drive circuit, second drive circuit is made up of driving chip U12, U14, U16 and U18 and peripheral circuit thereof that four models are M57962L, and the connection that drives chip U12, U14, U16, U18 is identical with the connection that drives chip U3, U5, U7, U9; The PWM3 signal is as four IGBT Q7, Q8 of another brachium pontis in the inverter circuit, the control signal of Q11, Q12, link to each other with the 3rd IGBT drive circuit, the 3rd drive circuit is made up of driving chip U21, U23, U25, U27 and peripheral circuit thereof that four models are M57962L, and the connection that drives chip U21, U23, U25, U27 is identical with the connection that drives chip U3, U5, U7, U9; Each drives chip M57962L three outputs, first output is 1 pin of M57962L, link to each other with the collector electrode of corresponding IGBT with diode by voltage-stabiliser tube, second output is 5 pin of M57962L, link to each other with the grid of corresponding IGBT by resistance, the 3rd output is two power supply junctions of M57962L, links to each other with the emitter of corresponding IGBT; The IGBT protective circuit is that four inputs of CD4072 or door chip U28, model are that eight inputs of CD4078 or door chip U29 and model are that CD4071 two inputs or a door chip U30 form by model; IGBT Q1, Q2, Q3, the fault-signal of Q4 is by optocoupler U2, U4, U6, the 3 pin output of U8, respectively as the input signal of four inputs or door chip U28, IGBTQ5, Q6, Q9, Q10, Q7, Q8, Q11, the fault-signal of Q12 is respectively by optocoupler U11, U13, U15, U17, U20, U22, U24, the 3 pin output of U26, respectively as the input signal of eight inputs or door chip U29, or 1 pin of door chip U28 and or the signal of the 1 pin output of door chip U29 respectively as the input signal of two inputs or door chip U30, or the output signal of 3 pin of door chip U30 is received dsp system.
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| CN 201320179682 CN203180800U (en) | 2013-04-10 | 2013-04-10 | Twice boost high-voltage pulse power |
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| CN 201320179682 CN203180800U (en) | 2013-04-10 | 2013-04-10 | Twice boost high-voltage pulse power |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103178743A (en) * | 2013-04-10 | 2013-06-26 | 浙江大学 | Double-boosting high-voltage pulse power supply |
| CN103475258A (en) * | 2013-09-09 | 2013-12-25 | 河海大学常州校区 | High-voltage pulse power supply with adjustable discharge parameters |
| CN103469249A (en) * | 2013-09-23 | 2013-12-25 | 益阳金能新材料有限责任公司 | Power supply unit for manganese electrolysis |
| CN109188960A (en) * | 2018-08-23 | 2019-01-11 | 东北大学 | A kind of general aerodynamic muscle embedded controller |
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2013
- 2013-04-10 CN CN 201320179682 patent/CN203180800U/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103178743A (en) * | 2013-04-10 | 2013-06-26 | 浙江大学 | Double-boosting high-voltage pulse power supply |
| CN103178743B (en) * | 2013-04-10 | 2015-06-10 | 浙江大学 | Double-boosting high-voltage pulse power supply |
| CN103475258A (en) * | 2013-09-09 | 2013-12-25 | 河海大学常州校区 | High-voltage pulse power supply with adjustable discharge parameters |
| CN103469249A (en) * | 2013-09-23 | 2013-12-25 | 益阳金能新材料有限责任公司 | Power supply unit for manganese electrolysis |
| CN103469249B (en) * | 2013-09-23 | 2016-03-23 | 益阳金能新材料有限责任公司 | Electrolytic manganese electric supply installation |
| CN109188960A (en) * | 2018-08-23 | 2019-01-11 | 东北大学 | A kind of general aerodynamic muscle embedded controller |
| CN109188960B (en) * | 2018-08-23 | 2020-10-16 | 东北大学 | Universal pneumatic muscle embedded controller |
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