CN203179937U - Light extraction layer of LED luminous chip and LED device - Google Patents
Light extraction layer of LED luminous chip and LED device Download PDFInfo
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- CN203179937U CN203179937U CN 201220741417 CN201220741417U CN203179937U CN 203179937 U CN203179937 U CN 203179937U CN 201220741417 CN201220741417 CN 201220741417 CN 201220741417 U CN201220741417 U CN 201220741417U CN 203179937 U CN203179937 U CN 203179937U
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Abstract
The utility model provides a light extraction layer of an LED luminous chip and an LED device. The LED luminous chip comprises a semiconductor layer and a light extraction layer which is directly contacted with the semiconductor layer. The surface of the light extraction layer, being directly contacted with the semiconductor layer, is a first surface. A surface of the light extraction layer, being directly contacted with an external medium, is a second surface. Refractive index of the first surface is not less than that of the semiconductor layer; refractive index of the light extraction layer ranges from refractive index of the first surface to refractive index of the second surface showing a change tendency of successively decreasing; and refractive index of the second surface is not greater than refractive index of the external medium. By the adoption of the light extraction layer of the LED luminous chip, light extraction efficiency and luminous efficiency of the light extraction layer can both be raised.
Description
Technical field
The utility model relates to light emitting semiconductor device, relates in particular to a kind of light-extraction layer and LED matrix that can improve the LED luminescence chip of getting optical efficiency and light extraction efficiency simultaneously.
Background technology
In recent years, along with the development that deepens continuously of semiconductor lighting, light-emitting diode (LED) receives more and more widely concern with the advantage of its high electro-optical efficiency and environmental protection.Core component in the semiconductor lighting product is the LED luminescence chip, and its research has had development at full speed with production technology, and chip brightness and reliability improve constantly.In the research and development and production process of LED luminescence chip, the raising of device external quantum efficiency is core content always, and therefore, the raising of light extraction efficiency seems most important.The light extraction efficiency of LED luminescence chip refers to shine the ratio of the outer photon that can be produced by electron-hole recombinations for the active area of the photon that utilizes and epitaxial wafer of chip.
In traditional LED luminescence chip, because substrate absorbs, electrode stops, the existence of the factors such as total reflection of exiting surface, light extraction efficiency is very low, and most photon be limited in chip internal can't outgoing and be transformed into heat, thereby become the undesirable element that influences chip reliability.
For improving light extraction efficiency, publication number CN101071840A(was on November 14th, 2007 in open day) patent application a kind of luminescent device is disclosed, comprise semiconductor layer and light-extraction layer, wherein, light-extraction layer is equaled by refractive index or the refractive index materials that is higher than this semiconductor layer is made, and this light-extraction layer is loose structure, fills transparent conductive oxide in the hole.Though this luminescent device has improved the light extraction efficiency on semiconductor layer and the light-extraction layer interface, but the critical angle in light-extraction layer and epoxy resin interface generation total reflection has reduced, be unfavorable for the bright dipping of LED luminescence chip packaging, still have the low problem of LED luminescent device light extraction efficiency.
The utility model content
In view of this, the utility model provides a kind of LED luminescent device, can improve light extraction efficiency and the light extraction efficiency of LED luminescent device simultaneously.
Based on this, the utility model also provides a kind of LED luminescence chip and preparation method thereof and LED matrix.The utility model adopts following technical scheme:
A kind of light-extraction layer of LED luminescence chip, described LED luminescence chip comprises semiconductor layer and the light-extraction layer that directly contacts with described semiconductor layer, described light-extraction layer is first surface with the surface that described semiconductor layer directly contacts, described light-extraction layer is second surface with the surface that external agency directly contacts, the refractive index of described first surface is not less than the refractive index of described semiconductor layer, and to the described second surface variation tendency that tapers off, and the refractive index of described second surface is not more than the refractive index of described external agency to the refractive index of described light-extraction layer from described first surface.
Further, described light-extraction layer has only one deck, and each components contents for preparing the material of described light-extraction layer changes along with the variation of described light-extraction layer thickness, and the refractive index of described light-extraction layer is reduced along with the increase of the thickness of described light-extraction layer.
Further, described light-extraction layer is made up of k layer light extraction sublayer, and i layer light extracts the refractive index of sublayer and extracts the refractive index of sublayer greater than the light of i+1 layer;
Wherein, described i layer light extracts the sublayer and extracts the sublayer near described semiconductor layer than described i+1 layer light, i, k is integer, k〉1,1≤i＜k.
Further, described LED luminescence chip is vertical stratification, positive assembling structure or inverted structure.
Further, described LED luminescence chip comprises: substrate, be positioned at P type gallium nitride layer on first end face of described substrate, be positioned at mqw light emitting layer on the described P type gallium nitride layer, be positioned at described n type gallium nitride layer on the described mqw light emitting layer, be positioned at N electrode on the first area of described n type gallium nitride layer, be positioned at the light-extraction layer on the second area of described n type gallium nitride layer and be positioned at P electrode on second end face of described substrate;
Wherein, the first area of described n type gallium nitride layer and second area constitute the n type gallium nitride layer; Described first end face is two relative end faces of described substrate with described second end face.
Further, described LED luminescence chip also comprises conductive layer, and described conductive layer contains several holes, fills as above-mentioned each described light-extraction layer in the described hole.
Further, described LED luminescence chip comprises: substrate, be positioned at n type gallium nitride layer on the described substrate, be positioned at mqw light emitting layer on the first area of described n type gallium nitride layer, be positioned at N electrode on the second area of described n type gallium nitride layer, be positioned at P type gallium nitride layer on the described mqw light emitting layer, be positioned at the conductive layer on the described P type gallium nitride layer and be positioned at P electrode on the conductive layer;
Wherein, the first area of n type gallium nitride layer and second area constitute the n type gallium nitride layer.
Further, described conductive layer is made by transparent conductive oxide.
Further, adopt compound xTiO
2/ (1-x) SiO
2Or xNb
2O
5/ (1-x) SiO
2Make described light-extraction layer, wherein, 0≤x≤1.
A kind of LED matrix comprises, support, is positioned at LED luminescence chip and metal lead wire on the described support, and wherein, described LED luminescence chip adopts above-mentioned each described structure.
Further, also comprise, be positioned at the epoxy resin on the described LED luminescence chip.
The light-extraction layer of the LED luminescence chip that the utility model provides, the refractive index of the first surface of its light-extraction layer is not less than the refractive index of the semiconductor layer that is in direct contact with it, thereby reduced reflection of light, improved the optical efficiency of getting of LED luminescence chip, simultaneously, the refractive index of the second surface of light-extraction layer is set to be not more than the refractive index of the external agency that is in direct contact with it, and, the refractive index of light-extraction layer reduces from the first surface to the second surface gradually, light is when inciding external agency from light-extraction layer like this, total reflection can not take place, improved the light extraction efficiency of LED luminescence chip.
Description of drawings
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, to do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below, apparently, accompanying drawing in describing below is embodiment more of the present utility model, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the structural representation of the utility model embodiment one;
Fig. 2 is the structural representation figure of the utility model embodiment two;
Fig. 3 (a) and Fig. 3 (b) are the structural representations of the utility model embodiment three;
Fig. 4 (a) and Fig. 4 (b) are the structural representations of the utility model embodiment four;
Fig. 5 is the structure chart of the utility model embodiment five;
Fig. 6 is the structure chart of the utility model embodiment six.
Embodiment
For above-mentioned purpose of the present utility model, feature and advantage can be become apparent more, below in conjunction with accompanying drawing embodiment of the present utility model is described in detail.
A lot of details have been set forth in the following description so that fully understand the utility model, but the utility model can also adopt other to be different from alternate manner described here and implement, those skilled in the art can do similar popularization under the situation of the utility model intension, so the utility model is not subjected to the restriction of following public specific embodiment.
Should be appreciated that when layer, zone or the such parts of substrate to be called as when being positioned at another parts " on " or " under ", it can be located immediately on another parts or under, maybe can have intermediate member.
Embodiment one
See also Fig. 1.Fig. 1 be the utility model embodiment one the LED luminescence chip structural representation.This LED luminescence chip comprises semiconductor layer 11 and the light-extraction layer 12 that directly contacts with this semiconductor layer 11.Light-extraction layer 12 is first surface 12-1 with the surface that semiconductor layer 11 directly contacts, light-extraction layer 12 is second surface 12-2 with the surface that the external agency (not shown) directly contacts, the refractive index of first surface 12-1 is not less than the refractive index of semiconductor layer 11, what need proposition is, here said being not less than is interpreted as equaling or being slightly larger than, the refractive index that is the refractive index of first surface 12-1 of light-extraction layer and semiconductor layer 11 is close, calculate formula according to reflectivity, when the light vertical incidence, reflectivity is
As can be known, when the refractive index of the first surface of light-extraction layer 12 and 12-1 semiconductor layer 11 is close, be that both refractive index differs more hour, reflectivity is less, can solve between the light-extraction layer of traditional structure and the semiconductor layer because refractive index differs the high reflectance that causes greatly, and then cause the problem of lower light extraction efficiency, simultaneously, first surface 12-1 place can not produce total reflection phenomenon, has improved the extraction efficiency of light.
In addition, generally, the semiconductor layer 11 of LED luminescence chip is gallium nitride-based material, and semiconductor layer 11 can comprise P type gallium nitride layer, mqw light emitting layer, n type gallium nitride layer.The refractive index of semiconductor layer 11 is 2.4, is used for the refractive index of epoxy resin of packaged chip to be 1.4, and is as described above, in order to improve light at the light extraction efficiency of semiconductor layer, the refractive index of light-extraction layer is not less than the refractive index of semiconductor layer usually, that is, the refractive index of light-extraction layer is not less than 2.4.And in the prior art, whole light-extraction layer has single optical index, so the refractive index at the second surface place of light-extraction layer still is not less than 2.4, obviously greater than the refractive index (refractive index as epoxy resin is 1.4, and the refractive index of air is 1.0) of external agency.Because the refractive index of light-extraction layer is far longer than the refractive index of external agency, when light incides external agency from light-extraction layer, light is that the critical angle of second surface generation total reflection diminishes at the interface of light-extraction layer and external agency, thereby cause easily taking place total reflection, and then cause the light emission rate of LED luminescence chip lower.
For solving the lower problem of light extraction efficiency, the refractive index of the light-extraction layer second surface 12-2 of the utility model embodiment one is not more than the refractive index of the external agency that is in direct contact with it, here said being not more than is interpreted as being equal to or slightly less than, the refractive index that is the refractive index of second surface 12-2 of light-extraction layer and external agency is close, like this, when light incides the external agency (epoxy resin or air) from second surface 12-2, differ the high reflectance that causes greatly because of refractive index between the light-extraction layer of solution traditional structure and the external agency, and then cause the problem of lower light extraction efficiency, simultaneously, second surface 12-2 place can not produce total reflection phenomenon, light is mapped to the outside of luminescence chip most possibly, and be not totally reflected to the inside of luminescence chip, obviously improved the light emission rate of LED luminescence chip compared to prior art.
The light-extraction layer that present embodiment provides generally can adopt transparent oxide or transparent nitride to form by methods such as PECVD or sputters.
The light-extraction layer of LED luminescence chip described above can be single layer structure.When this light-extraction layer is single layer structure, can adopt the compound of at least two kinds of compounds to form.For example, can adopt compound xTiO
2/ (1-x) SiO
2Or xNb
2O
5/ (1-x) SiO
2Make light-extraction layer, along with the varied in thickness of light-extraction layer, each components contents in the compound in the light-extraction layer can change, that is, the value of x changes between interval [0,1].The constituent content variation of light-extraction layer can cause the refractive index of light-extraction layer to change, thereby the refractive index that realizes light-extraction layer reduces along with the increase of light-extraction layer thickness.When light-extraction layer was one deck structure, the refractive index of light-extraction layer was continuous variation from the first surface to the second surface, reduces gradually, and there is not boundary reflection in light in light-extraction layer internal communication process, improved the light extraction efficiency of LED luminescence chip.
The light-extraction layer of the LED luminescence chip among the embodiment one only has one deck structure, each components contents of material by preparing this light-extraction layer 12 realizes that along with the varied in thickness of light-extraction layer 12 changes light-extraction layer 12 refractive indexes reduce along with the increase of the thickness of light-extraction layer 12.In addition, the light-extraction layer of the LED luminescence chip that provides of the utility model can also be extracted the sublayer and realizes light-extraction layer 12 change of refractive by forming multilayer light.
Embodiment two
The LED luminescence chip that embodiment two provides and the difference of embodiment one only are that light-extraction layer 12 extracts the sublayer by the multilayer light with different refractivity and constitute, identical among the structure of other parts, manufacture method and the embodiment one.For the purpose of concise and to the point, present embodiment only is elaborated to light-extraction layer, and other parts see also embodiment one.
In conjunction with Fig. 2, light-extraction layer 12 is extracted the sublayer by k layer light and is formed, and the refractive index of every layer of light extraction sublayer is phase step type and changes, it is that the 1st layer of light extracts the sublayer that the light that contacts with semiconductor layer 11 extracts the sublayer, be followed successively by the 2nd layer of light and extract the sublayer ... i layer light extracts the sublayer, i+1 layer light extracts the sublayer ..., k layer light extracts the sublayer, and k layer light extracts the sublayer and contacts with external agency (not marking among the figure).As can be seen, i layer light extracts the sublayer and extracts the sublayer near semiconductor layer 11 than i+1 layer light.Wherein, the refractive index of the 1st layer of light extraction sublayer (first surface that is equivalent to light-extraction layer 1202) is not less than the refractive index of the semiconductor layer 11 that is in direct contact with it, and i layer light extracts the refractive index of sublayer and extracts the refractive index of sublayer greater than i+1 layer light, the refractive index of k layer light extraction sublayer (second surface that is equivalent to light-extraction layer 1202) is not more than the refractive index of the external agency that is in direct contact with it, wherein, i, k is integer, k〉1,1≤i＜k.As can be seen, it is more little more to extract the refractive index of sublayer away from the light of semiconductor layer 11, so, when light when semiconductor layer 11 incides each light the light-extraction layer 12 and extracts sublayer because the 1st light extracts the refractive index that the refractive index of sublayer is not less than semiconductor layer, and the refractive index that light extracts the sublayer is successively decreased along with the increase with semiconductor layer 11 distances is phase step type, and the refractive index difference that adjacent two-layer light extracts between the sublayer is less, calculate formula according to reflectivity, when the light vertical incidence, reflectivity is
As can be known, when adjacent two layers light extracts the refractive index of sublayer when close, reflectivity is less, can solve between the light-extraction layer of traditional structure and the semiconductor layer because refractive index differs the high reflectance problem that causes greatly, is conducive to improve the extraction efficiency of light-extraction layer.
In addition, the refractive index of k layer light extraction sublayer is not more than the refractive index of the external agency that is in contact with it, the refractive index that is external agency is not less than the refractive index that k layer light extracts the sublayer, like this, light extracts the sublayer when inciding the external agency from k layer light, has solved between the light-extraction layer of traditional structure and the external agency because refractive index differs the high reflectance problem that causes greatly, simultaneously, can not produce total reflection phenomenon, improve the light emission rate of LED luminescence chip.
Above-mentioned enforcement one or embodiment two described LED luminescence chip structures can also comprise conductive layer, and this conductive layer is positioned on the semiconductor layer.Consult embodiment three in detail.
Embodiment three
In conjunction with Fig. 3 (a) and Fig. 3 (b), Fig. 3 (a) is the LED luminescence chip structural profile schematic diagram among the embodiment three, and Fig. 3 (b) is the vertical view of the LED luminescence chip structure of embodiment three.This LED luminescence chip comprises semiconductor layer 11, is positioned at the conductive layer 13 on the semiconductor layer 11, wherein this conductive layer 13 is loose structure, this hole can form at conductive layer 13 by methods such as wet etching or dry etchings, and this hole can be circle, rectangle, ellipse or Else Rule or irregularly shaped.In described hole, be filled with embodiment one or embodiment two described light-extraction layer 12, by adjusting surface area and the surface area of conductive layer 13 and the spacing between each hole of light-extraction layer 12, control the electric conductivity of conductive layer.
The formation method of this light-extraction layer 12 can at first form light-extraction layer by methods such as PECVD or sputters in conductive layer 13 depositions, remove the light-extraction layer part except the hole site on the conductive layer 13 by methods such as wet etching or dry etchings then, the light-extraction layer 12 that this method forms is only in the hole of conductive layer 13.
The formation method of this light-extraction layer 12 can also only be removed the light-extraction layer 13 of the electrode pad part of reserving on the conductive layer 13 (making the electrode of LED luminescence chip in this weld pad zone) by methods such as wet etching or dry etchings, at this moment, light-extraction layer 13 covers conductive layer and filler opening inside configuration, because the refractive index (being generally about 2.0) of conductive layer 13 is less than the refractive index (more than or equal to 2.4) at the first surface place of light-extraction layer 12, so can not produce total reflection at conductive layer 13 with light-extraction layer 12 contact interface places, namely can not reduce and get optical efficiency.
Embodiment one or embodiment two described LED luminescence chips can also be vertical stratification.Consult embodiment four in detail.
Embodiment four
In conjunction with Fig. 4 (a) and Fig. 4 (b).Fig. 4 (a) is the structural profile schematic diagram of the LED luminescence chip of vertical stratification, and Fig. 4 (b) is the vertical view of the LED luminescence chip of vertical stratification.This vertical stratification LED luminescence chip comprises substrate 41, be positioned at P type gallium nitride layer 42 on first end face of substrate 41, be positioned at mqw light emitting layer 43 on the P type gallium nitride layer 42, be positioned at n type gallium nitride layer 44 on the mqw light emitting layer 43, be positioned at the N electrode 45 on the first area of n type gallium nitride layer 44 and be positioned at the light-extraction layer 12 on the second area of n type gallium nitride layer 44 and be positioned at the P electrode 46 on second end face of substrate 41.N type gallium nitride layer 44 is that N electrode 45 or light-extraction layer 12 are carried out dividing region according to its surperficial upward existence.Having the zone of the n type gallium nitride layer 44 of N electrode 45 is the first area, and the zone that has the n type gallium nitride layer 44 of light-extraction layer 12 is second area.So, on the surface of n type gallium nitride layer 44 or have N electrode 45, or there is light-extraction layer 12, there is not white space.In conjunction with Fig. 4 (b), learn that very clearly N electrode 45 only accounts for the first area of n type gallium nitride layer 44, light-extraction layer 12 is positioned at the second area on the n type gallium nitride layer, light-extraction layer 12 be positioned at N electrode 45 around and cover the second area of light-extraction layer 12.This LED luminescence chip also comprises the P electrode 46 on second end face that is positioned at substrate 41, and wherein, first end face of substrate 41 and second end face are 41 two opposing end faces of substrate.Substrate 41 can adopt Si, alloy, metal or other heat-conductivity conducting material etc.Because the light-extraction layer 12 of the LED luminescence chip of this vertical stratification adopts embodiment one or embodiment two described structures, so this LED luminescence chip can improve light extraction efficiency and light extraction efficiency compared to prior art.
Embodiment five
Further, this LED luminescence chip can be the formal dress structure.As shown in Figure 5, the LED luminescence chip of this positive assembling structure comprises, substrate 41, is positioned at n type gallium nitride layer 44 on the substrate 41, is positioned at mqw light emitting layer 43 on the first area of n type gallium nitride layer 44, is positioned at P type gallium nitride layer 42 on the mqw light emitting layer 43, is positioned at conductive layer 13 on the P type gallium nitride layer 42, is positioned at the N electrode 45 on the second area of n type gallium nitride layer 44 and is positioned at P electrode 46 on the conductive layer 13.Wherein, n type gallium nitride layer 44 is divided into first area and second area.The first area of n type gallium nitride layer 44 is covered by mqw light emitting layer 43, is provided with N electrode 45 on the second area of n type gallium nitride layer 44, and N electrode 45 not exclusively covers the second area of n type gallium nitride layer 44.
Wherein, substrate 41 can adopt sapphire, gallium nitride (GaN), carborundum (SiC) etc.In order to improve the lattice matching rate, can also generate one deck resilient coating 50 at substrate 41, this resilient coating can be generated by GaN or AlGaN.Described conductive layer 13 adopts above-described embodiment three described structures, and this conductive layer 13 is loose structure, is filled with embodiment one or embodiment two described light-extraction layer 12 in the hole, so this LED luminescence chip improves light extraction efficiency and light emission rate simultaneously.
Embodiment six
Based on the LED luminescence chip of above-mentioned arbitrary embodiment, embodiment six provides a kind of LED matrix, comprising: support 60, be positioned at LED luminescence chip 61 and metal lead wire 62 on the support 60, wherein, the LED luminescence chip adopts embodiment three described structures.This LED matrix can improve light extraction efficiency and light emission rate simultaneously.
Described support 60 is the plastic chip carrier of PLCC(band lead-in wire) type support, pcb board, metal-cored circuit plate or ceramic substrate.The quantity of LED luminescence chip 61 is at least one.
The LED matrix that present embodiment provides can be directly exposed in the air not by resin-encapsulated, can also comprise the transparent epoxy resin 63 that is positioned at LED luminescence chip 61 tops.
The above only is preferred embodiment of the present utility model, is not the utility model is done any pro forma restriction.Though the utility model discloses as above with preferred embodiment, yet is not to limit the utility model.Any those of ordinary skill in the art, do not breaking away under the technical solutions of the utility model scope situation, all can utilize method and the technology contents of above-mentioned announcement that technical solutions of the utility model are made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solutions of the utility model, according to any simple modification of on the technical spirit of the present utility model above embodiment being done, equivalent variations and modification all still belong in the scope of technical solutions of the utility model.
Claims (9)
1. the light-extraction layer of a LED luminescence chip, described LED luminescence chip comprises semiconductor layer and the light-extraction layer that directly contacts with described semiconductor layer, it is characterized in that, described light-extraction layer is first surface with the surface that described semiconductor layer directly contacts, described light-extraction layer is second surface with the surface that external agency directly contacts, the refractive index of described first surface is not less than the refractive index of described semiconductor layer, and to the described second surface variation tendency that tapers off, and the refractive index of described second surface is not more than the refractive index of described external agency to the refractive index of described light-extraction layer from described first surface.
2. light-extraction layer according to claim 1 is characterized in that, described light-extraction layer is made up of k layer light extraction sublayer, and i layer light extracts the refractive index of sublayer and extracts the refractive index of sublayer greater than the light of i+1 layer;
Wherein, described i layer light extracts the sublayer and extracts the sublayer near described semiconductor layer than described i+1 layer light, i, k is integer, k〉1,1≤i＜k.
3. light-extraction layer according to claim 1 and 2 is characterized in that, described LED luminescence chip structure is vertical stratification, positive assembling structure or inverted structure.
4. light-extraction layer according to claim 1 and 2, it is characterized in that described LED luminescence chip comprises: substrate, be positioned at P type gallium nitride layer on first end face of described substrate, be positioned at mqw light emitting layer on the described P type gallium nitride layer, be positioned at n type gallium nitride layer on the described mqw light emitting layer, be positioned at N electrode on the first area of described n type gallium nitride layer, be positioned at the light-extraction layer on the second area of described n type gallium nitride layer and be positioned at P electrode on second end face of described substrate;
Wherein, the first area of described n type gallium nitride layer and second area constitute the n type gallium nitride layer; Described first end face is two relative end faces of described substrate with described second end face.
5. light-extraction layer according to claim 1 and 2 is characterized in that, described LED luminescence chip also comprises conductive layer, and described conductive layer contains several holes, fills light-extraction layer as claimed in claim 1 or 2 in the described hole.
6. light-extraction layer according to claim 5, it is characterized in that described LED luminescence chip comprises: substrate, be positioned at n type gallium nitride layer on the described substrate, be positioned at mqw light emitting layer on the first area of described n type gallium nitride layer, be positioned at N electrode on the second area of described n type gallium nitride layer, be positioned at P type gallium nitride layer on the described mqw light emitting layer, be positioned at the described conductive layer on the described P type gallium nitride layer and be positioned at P electrode on the described conductive layer;
Wherein, the first area of n type gallium nitride layer and second area constitute the n type gallium nitride layer.
7. light-extraction layer according to claim 1 is characterized in that, described light-extraction layer is made by transparent oxide or transparent nitride.
8. a LED matrix comprises, support, is positioned at LED luminescence chip and metal lead wire on the described support, it is characterized in that, described LED luminescence chip adopts each described structure of claim 1-7.
9. LED matrix according to claim 8 is characterized in that, also comprises, is positioned at the epoxy resin on the described LED luminescence chip.
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| CN 201220741417 CN203179937U (en) | 2012-12-30 | 2012-12-30 | Light extraction layer of LED luminous chip and LED device |
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| CN 201220741417 CN203179937U (en) | 2012-12-30 | 2012-12-30 | Light extraction layer of LED luminous chip and LED device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022310A (en) * | 2012-12-30 | 2013-04-03 | 佛山市国星半导体技术有限公司 | Light extraction layer of LED luminous chip and LED device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022310A (en) * | 2012-12-30 | 2013-04-03 | 佛山市国星半导体技术有限公司 | Light extraction layer of LED luminous chip and LED device |
| CN103022310B (en) * | 2012-12-30 | 2016-03-23 | 佛山市国星半导体技术有限公司 | The light-extraction layer of LED luminescence chip and LED matrix |
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