CN203085628U - Non-polar multiple quantum well growing on LiGaO2 substrate - Google Patents

Non-polar multiple quantum well growing on LiGaO2 substrate Download PDF

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CN203085628U
CN203085628U CN 201220684250 CN201220684250U CN203085628U CN 203085628 U CN203085628 U CN 203085628U CN 201220684250 CN201220684250 CN 201220684250 CN 201220684250 U CN201220684250 U CN 201220684250U CN 203085628 U CN203085628 U CN 203085628U
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substrate
quantum well
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ligao
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李国强
杨慧
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South China University of Technology SCUT
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South China University of Technology SCUT
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Abstract

The utility model discloses a non-polar multiple quantum well growing on a LiGaO2 substrate comprising, from bottom to top, a LiGaO2 substrate, a non-polar m surface GaN buffer layer, a non-polar m surface GaN epitaxial layer, and a polar InGaN/GaN multiple quantum well sequentially. Compared to the prior art, the utility model is advantageous in that the growing technology is simple, the preparation costs are low; the prepared non-polar InGaN/GaN multiple quantum well has advantages of low defect density, good crystallization quality, and good optical properties.

Description

Be grown in LiGaO 2Nonpolar Multiple Quantum Well on the substrate
Technical field
The utility model relates to nonpolar Multiple Quantum Well, particularly is grown in LiGaO 2Non-utmost point Multiple Quantum Well on the substrate.
Background technology
LED be called as the 4th generation lighting source or green light source, have characteristics such as energy-saving and environmental protection, the life-span is long, volume is little, can be widely used in fields such as various general lightings, indication, demonstration, decoration, backlight and urban landscape.Current, under the severe day by day background of global warming problem, energy savings, reduce greenhouse gas emission and become the major issue that the whole world is faced jointly.Based on the low-carbon economy of low energy consumption, low pollution, low emission, will become the important directions of economic development.At lighting field, the application of LED luminous product is just attracting common people's sight, and LED must be a developing tendency in future as a kind of novel green light source product, and 21st century will be to be the epoch of the novel illumination light source of representative with LED.
III hi-nitride semiconductor material GaN makes the ideal material of efficient LED device.At present, the luminous efficiency of GaN base LED has reached 28% and in further growth now, and this numerical value is higher than the luminous efficiency of present normally used incandescent lamp (being about 2%) or fluorescent lamp lighting systems such as (being about 10%) far away.Data statistics shows, China surpasses the Britain's power consumption in 1 year in the whole nation at present electric consumption on lighting every year more than 4,100 hundred million degree.If replace whole incandescent lamps or partly replace fluorescent lamp with LED, can save electric consumption on lighting near half, surpass the Three Gorges Projects energy output of the whole year.Therefore the greenhouse gas emission that produces because of illumination also can reduce greatly.In addition, compare with fluorescent lamp, GaN base LED does not contain poisonous mercury element, and is about 100 times of this type of illuminations useful life.
LED will really realize extensive extensive use, needs further to improve the luminous efficiency of led chip.Though the luminous efficiency of LED has surpassed fluorescent lamp and incandescent lamp, commercialization LED luminous efficiency still is lower than sodium vapor lamp (150lm/W), unit lumens/watt on the high side.At present, the luminous efficiency of led chip is not high enough, and a main cause is owing to its Sapphire Substrate causes.The problem that has two sternnesses based on the LED technology of Sapphire Substrate.At first, the mismatch ratio of sapphire and GaN lattice is up to 17%, and so high lattice mismatch makes the LED epitaxial wafer on the sapphire that very high defect concentration be arranged, and has influenced the luminous efficiency of led chip greatly.Secondly, the Sapphire Substrate price is very expensive, makes nitride LED production cost very high (Sapphire Substrate is occupied sizable ratio in the cost of manufacture of LED).
The not high enough another one main cause of the luminous efficiency of led chip is because present widely used GaN base LED has polarity.Making the ideal material of efficient LED device at present is GaN.GaN is the close-packed hexagonal crystal structure, and its crystal face is divided into polar surface c face [(0001) face] and non-polar plane a face [(11-20) face] and m face [(1-100) face].At present, GaN base LED mostly forms based on the polar surface structure of GaN.On polar surface GaN, the barycenter of Ga atom set and N atom set does not overlap, thereby formation electric dipole, produce spontaneous polarization field and piezoelectric polarization fields, so cause quantum constraint Stark effect (Quantum-confined Starker Effect, QCSE), electronics is separated with the hole, the radiation recombination efficient of charge carrier reduces, and finally influences the luminous efficiency of LED, and causes the instability of LED emission wavelength.Addressing this problem best bet is the GaN material LED that adopts non-polar plane, to eliminate the influence of quantum constraint Stark effect.Theoretical research shows, uses nonpolar face GaN to make LED, can make the LED luminous efficiency improve nearly one times.
This shows, make the extensive extensive use of the real realization of LED, improve the luminous efficiency of led chip, and reduce its manufacturing cost, the most basic way is exactly the non-polar GaN-based LED extension chip on the novel substrate of research and development.And the making of nonpolar InGaN/GaN quantum well is the precondition that realizes non-polar GaN-based LED, and therefore the nonpolar InGaN/GaN quantum well of epitaxial growth is the focus and the difficult point of research always on the novel substrate.
The utility model content
For the above-mentioned shortcoming and deficiency that overcome prior art, the purpose of this utility model is to provide a kind of LiGaO of being grown in 2Nonpolar InGaN/GaN quantum well on the substrate has that defect concentration is low, crystalline quality good, the advantage that luminescent properties is good.Another purpose of the present utility model is to provide the preparation method of above-mentioned nonpolar InGaN/GaN quantum well.
The purpose of this utility model is achieved through the following technical solutions:
Be grown in LiGaO 2Nonpolar Multiple Quantum Well on the substrate comprises the LiGaO that is arranged in order from the bottom to top 2Substrate, non-polar m-surface GaN resilient coating, non-polar m-surface GaN epitaxial loayer, nonpolar InGaN/GaN quantum well layer.
Described LiGaO 2The crystal orientation of substrate is 0.2 ~ 0.5 ° in (100) crystal face deflection (110) direction.
The thickness of described non-polar m-surface GaN resilient coating is 30 ~ 60nm; The thickness of described non-polar m-surface GaN epitaxial loayer is 150 ~ 250nm; InGaN trap layer/GaN that described nonpolar InGaN/GaN quantum well layer is 5 ~ 10 cycles builds layer, and wherein the thickness of InGaN trap layer is 2 ~ 3nm; The thickness that GaN builds layer is 10 ~ 13nm.
Be grown in LiGaO 2The preparation method of the nonpolar Multiple Quantum Well on the substrate may further comprise the steps:
(1) adopts LiGaO 2Substrate is chosen crystal orientation;
(2) substrate is carried out annealing in process: with substrate 900 ~ 1000 ℃ down behind baking 3 ~ 5h air cooling to room temperature;
(3) substrate being carried out cleaning surfaces handles;
(4) adopt low temperature molecular beam epitaxy technology growing nonpolar m face GaN resilient coating, process conditions are: underlayer temperature is 220 ~ 350 ℃, feeds Ga evaporation source and N plasma, and chamber pressure is 5 ~ 7 * 10 -5Torr, the radio-frequency power that produces plasma nitrogen is 200-300W, V/III ratio is 50 ~ 60, the speed of growth is 0.4 ~ 0.6ML/s;
(5) adopt pulse laser deposition process growing nonpolar m face GaN epitaxial loayer, process conditions are: underlayer temperature rises to 450-550 ℃, adopts pulse laser bombardment Ga target, feeds the N plasma, and radio-frequency power is 200-300W, and chamber pressure is 3 ~ 5 * 10 -5Torr, laser energy are 120 ~ 180mJ, and frequency is 10 ~ 30Hz;
(6) adopt molecular beam epitaxial process growing nonpolar InGaN/GaN Multiple Quantum Well, process conditions are: underlayer temperature is 500 ~ 750 ℃, feeds Ga evaporation source and N plasma, and chamber pressure is 5 ~ 7 * 10 -5Torr, the radio-frequency power that produces plasma nitrogen is 200 ~ 300W.
Step (3) is described carries out the cleaning surfaces processing to substrate, is specially: with LiGaO 2Substrate was put under the deionized water room temperature ultrasonic cleaning 5 ~ 10 minutes, removed LiGaO 2Substrate surface pickup particle successively through persalt, acetone, ethanol washing, is removed surface organic matter again; LiGaO after the cleaning 2Substrate dries up with high-purity drying nitrogen; Afterwards with LiGaO 2Substrate is put into the low temperature molecular beam epitaxy growth room, under UHV condition, underlayer temperature is risen to 850 ~ 900 ℃, toasts 20 ~ 30 minutes, removes LiGaO 2The impurity of substrate surface remnants.
Compared with prior art, the utlity model has following advantage and beneficial effect:
(1) the utility model uses LiGaO 2As substrate, adopt the low temperature molecular beam epitaxy technology simultaneously at LiGaO 2Elder generation's growth one deck non-polar m-surface GaN resilient coating obtains very low lattice mismatch between substrate and the non-polar m-surface GaN epitaxial loayer on the substrate, helps depositing the nonpolar GaN film of low defective, has improved the luminous efficiency of quantum well greatly.
(2) adopt the low temperature molecular beam epitaxy technology at LiGaO 2Elder generation's growth one deck non-polar m-surface GaN resilient coating can guarantee LiGaO at low temperatures on the substrate 2The stability of substrate, lattice mismatch that the volatilization of minimizing lithium ion causes and violent interfacial reaction, thus lay good basis for next step growing nonpolar m face GaN epitaxial loayer.
(3) adopt molecular beam epitaxial process to prepare nonpolar InGaN/GaN multi-quantum-well film, eliminated the quantum constraint Stark effect that polar surface GaN brings, improve the radiation recombination efficient of charge carrier, can increase substantially the efficient of nitride device such as semiconductor laser, light-emitting diode and solar cell.
(4) use LiGaO 2As substrate, obtain easily, low price helps reducing production costs.
Description of drawings
Fig. 1 is the LiGaO that is grown in of embodiment 1 preparation 2The schematic cross-section of the nonpolar InGaN/GaN Multiple Quantum Well on the substrate.
Fig. 2 is the LiGaO that is grown in of embodiment 1 preparation 2The XRD resolution chart of the nonpolar InGaN/GaN Multiple Quantum Well on the substrate.
Fig. 3 is the LiGaO that is grown in of embodiment 1 preparation 2The PL spectrum resolution chart of the nonpolar InGaN/GaN Multiple Quantum Well on the substrate.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the utility model is described in further detail, but execution mode of the present utility model is not limited thereto.
Embodiment 1
The utility model is grown in LiGaO 2The preparation method of the nonpolar Multiple Quantum Well on the substrate may further comprise the steps:
(1) chooses substrate and crystal orientation: adopt LiGaO 2Substrate, crystal orientation are 0.2 ° in (100) crystal face deflection (110) direction.
(2) substrate is carried out annealing in process: with substrate 900 ℃ down behind the baking 3h air cooling to room temperature.
(3) substrate being carried out cleaning surfaces handles: with LiGaO 2Substrate was put under the deionized water room temperature ultrasonic cleaning 5 minutes, removed LiGaO 2Substrate surface pickup particle successively through persalt, acetone, ethanol washing, is removed surface organic matter again; LiGaO after the cleaning 2Substrate dries up with high-purity drying nitrogen; Afterwards with LiGaO 2Substrate is put into the low temperature molecular beam epitaxy growth room, under UHV condition, underlayer temperature is risen to 850 ℃, toasts 20 minutes, removes LiGaO 2The impurity of substrate surface remnants.
(4) adopt low temperature molecular beam epitaxy technology growing nonpolar m face GaN resilient coating, process conditions are: underlayer temperature is 220 ℃, feeds Ga evaporation source and N plasma, and chamber pressure is 5 * 10 -5Torr, the radio-frequency power that produces plasma nitrogen are 200W, and V/III ratio is 50, the speed of growth is 0.4ML/s.
(5) adopt pulse laser deposition process growing nonpolar m face GaN epitaxial loayer, process conditions are: underlayer temperature rises to 450 ℃, adopts pulse laser bombardment Ga target, feeds the N plasma simultaneously, and radio-frequency power is 200W, and chamber pressure is 3 * 10 -5Torr, laser energy are 120mJ, and laser frequency is 10Hz.
(6) adopt molecular beam epitaxial process growing nonpolar InGaN/GaN Multiple Quantum Well, cycle is 5, and thickness is that 2nm InGaN trap layer/10nm GaN builds layer, and process conditions are: underlayer temperature is 500 ℃, feed Ga evaporation source and N plasma, chamber pressure is 5 * 10 -5Torr, radio-frequency power are 200W, and V/III ratio is 50, the speed of growth is 0.4ML/s.
As shown in Figure 1, present embodiment preparation is grown in LiGaO 2Nonpolar InGaN/GaN Multiple Quantum Well schematic diagram on the substrate comprises being grown in LiGaO 2Non-polar m-surface GaN resilient coating 12 on the substrate 11 is grown in the non-polar m-surface GaN epitaxial loayer 13 on the non-polar m-surface GaN resilient coating and is grown in nonpolar InGaN/GaN Multiple Quantum Well 14 on the non-polar GaN epitaxial loayer.Wherein, the thickness of described non-polar m-surface GaN resilient coating is 30nm; The thickness of described non-polar m-surface GaN epitaxial loayer is 150nm; InGaN trap layer/GaN that described nonpolar InGaN/GaN quantum well layer is 5 cycles builds layer, and wherein the thickness of InGaN trap layer is 2nm; The thickness that GaN builds layer is 10nm.
Fig. 2 is the LiGaO that is grown in of present embodiment preparation 2The XRD resolution chart of the nonpolar InGaN/GaN Multiple Quantum Well on substrate (100) face.Test obtains InGaN/GaN quantum well satellites, and its highest peak is GaN, and its half-peak breadth (FWHM) value is lower than 0.1 °, about the next door be followed successively by first order satellites, second level satellites ..., the quantum well layer 2nm that calculates at last builds a layer 10nm.No matter the nonpolar InGaN/GaN Multiple Quantum Well that shows the utility model preparation is in defect concentration or at crystalline quality, all has extraordinary performance.
Fig. 3 is the LiGaO that is grown in of present embodiment preparation 2Nonpolar InGaN/GaN Multiple Quantum Well on the substrate be PL spectrum resolution chart under the room temperature in temperature.As seen from the figure, temperature be under the 293K PL spectrum test to obtain the glow peak wavelength be 444nm, half-peak breadth is 26.6nm.The nonpolar GaN film that shows the utility model preparation has extraordinary performance on optical properties.
Embodiment 2
The utility model is grown in LiGaO 2The preparation method of the nonpolar Multiple Quantum Well on the substrate may further comprise the steps:
(1) chooses substrate and crystal orientation: adopt LiGaO 2Substrate, crystal orientation are 0.5 ° in (100) crystal face deflection (110) direction.
(2) substrate is carried out annealing in process: with substrate behind 1000 ℃ of following high-temperature baking 5h air cooling to room temperature.
(3) substrate being carried out cleaning surfaces handles: with LiGaO 2Substrate was put under the deionized water room temperature ultrasonic cleaning 10 minutes, removed LiGaO 2Substrate surface pickup particle successively through persalt, acetone, ethanol washing, is removed surface organic matter again; LiGaO after the cleaning 2Substrate dries up with high-purity drying nitrogen; Afterwards with LiGaO 2Substrate is put into the low temperature molecular beam epitaxy growth room, under UHV condition, underlayer temperature is risen to 900 ℃, toasts 30 minutes, removes LiGaO 2The impurity of substrate surface remnants.
(4) adopt low temperature molecular beam epitaxy technology growing nonpolar m face GaN resilient coating, process conditions are: underlayer temperature is 350 ℃, feeds Ga evaporation source and N plasma, and chamber pressure is 7 * 10 -5The radio-frequency power of torr, generation plasma nitrogen is 300W, and V/III ratio is 60, and the speed of growth is 0.6ML/s.
(5) adopt pulse laser deposition process growing nonpolar m face GaN epitaxial loayer, process conditions are: underlayer temperature rises to 550 ℃, adopts pulse laser bombardment Ga target, feeds the N plasma simultaneously, and radio-frequency power is 300W, chamber pressure 5 * 10 -5Torr, laser energy are 180mJ, and laser frequency is 30Hz.
(6) adopt molecular beam epitaxial process growing nonpolar InGaN/GaN Multiple Quantum Well, cycle is 10, and thickness is that 3nm InGaN trap layer/13nm GaN builds layer, and process conditions are: underlayer temperature is 750 ℃, feed Ga evaporation source and N plasma, chamber pressure is 7 * 10 -5Torr, radio-frequency power are 300W, and V/III ratio is 60, the speed of growth is 0.6ML/s.
Present embodiment preparation be grown in LiGaO 2Nonpolar InGaN/GaN Multiple Quantum Well on the substrate comprises the LiGaO that is arranged in order from the bottom to top 2Substrate, non-polar m-surface GaN resilient coating, non-polar m-surface GaN epitaxial loayer, nonpolar InGaN/GaN quantum well layer wherein, the thickness of described non-polar m-surface GaN resilient coating is 60nm; The thickness of described non-polar m-surface GaN epitaxial loayer is 250nm; InGaN trap layer/GaN that described nonpolar InGaN/GaN quantum well layer is 10 cycles builds layer, and wherein the thickness of InGaN trap layer is 3nm; The thickness that GaN builds layer is 13nm.
The foregoing description is the utility model preferred implementation; but execution mode of the present utility model is not limited by the examples; other any do not deviate from change, the modification done under spirit of the present utility model and the principle, substitutes, combination, simplify; all should be the substitute mode of equivalence, be included within the protection range of the present utility model.

Claims (3)

1. be grown in LiGaO 2Nonpolar Multiple Quantum Well on the substrate is characterized in that, comprises the LiGaO that is arranged in order from the bottom to top 2Substrate, non-polar m-surface GaN resilient coating, non-polar m-surface GaN epitaxial loayer, nonpolar InGaN/GaN quantum well layer.
2. the LiGaO that is grown in according to claim 1 2Nonpolar Multiple Quantum Well on the substrate is characterized in that, described LiGaO 2The crystal orientation of substrate is 0.2 ~ 0.5 ° in (100) crystal face deflection (110) direction.
3. the LiGaO that is grown in according to claim 1 2Nonpolar Multiple Quantum Well on the substrate is characterized in that, the thickness of described non-polar m-surface GaN resilient coating is 30 ~ 60nm; The thickness of described non-polar m-surface GaN epitaxial loayer is 150 ~ 250nm; InGaN trap layer/GaN that described nonpolar InGaN/GaN quantum well layer is 5 ~ 10 cycles builds layer, and wherein the thickness of InGaN trap layer is 2 ~ 3nm; The thickness that GaN builds layer is 10 ~ 13nm.
CN 201220684250 2012-12-11 2012-12-11 Non-polar multiple quantum well growing on LiGaO2 substrate Withdrawn - After Issue CN203085628U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103035795A (en) * 2012-12-11 2013-04-10 华南理工大学 Nonpolar multiple quantum well growing on LiGaO2 substrate and preparation method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103035795A (en) * 2012-12-11 2013-04-10 华南理工大学 Nonpolar multiple quantum well growing on LiGaO2 substrate and preparation method thereof
CN103035795B (en) * 2012-12-11 2015-09-16 华南理工大学 Growth is at LiGaO 2nonpolar Multiple Quantum Well on substrate and preparation method thereof

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Granted publication date: 20130724

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