CN203055963U - N-type silicon substrate based back contact type HIT (Heterojunction with Intrinsic Thin layer) solar cell structure - Google Patents
N-type silicon substrate based back contact type HIT (Heterojunction with Intrinsic Thin layer) solar cell structure Download PDFInfo
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- CN203055963U CN203055963U CN 201220643086 CN201220643086U CN203055963U CN 203055963 U CN203055963 U CN 203055963U CN 201220643086 CN201220643086 CN 201220643086 CN 201220643086 U CN201220643086 U CN 201220643086U CN 203055963 U CN203055963 U CN 203055963U
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Abstract
The utility model relates to an N-type silicon substrate based back contact type HIT (Heterojunction with Intrinsic Thin layer) solar cell structure. The structure is characterized in that the illuminated surface of an N-type silicon substrate comprises an illuminated surface n-type amorphous or microcrystalline silicon layer and an antireflection layer from inside to outside in sequence; the shady surface comprises an intrinsic amorphous or microcrystalline silicon layer, a p-type amorphous or microcrystalline silicon layer and a shady surface n-type amorphous or microcrystalline silicon layer from inside to outside in sequence; the p-type amorphous or microcrystalline silicon layer and the shady surface n-type amorphous or microcrystalline silicon layer are separated by an interval and are alternately arranged on the intrinsic amorphous or microcrystalline silicon layer; transparent conducting thin films cover the p-type amorphous or microcrystalline silicon layer and the shady surface n-type amorphous or microcrystalline silicon layer; and metal electrodes are arranged on the transparent conducting thin films. The HIT solar cell structure has the following beneficial effects: in combination with the preparation methods of the conventional crystalline silicon solar cells and the thin film solar cells and relative to the traditional HIT cells, the preparation process is simple, the usage amount of the metal electrodes is reduced, and the problem that the front electrodes of the conventional solar cells shade light is avoided, thereby improving the efficiency of the solar cell.
Description
Technical field
The utility model relates to the crystal silicon solar batteries technical field, is specifically related to a kind of based on N-type silicon substrate back-contact HIT solar battery structure.
Background technology
A kind of technological process of the demand that develops rapidly of solar energy industry is simple, and the industrialization technology that electricity conversion is high reduces cost of electricity-generating, reaches with civil power with valency or be lower than the target of civil power electricity price.
Current conventional crystal silicon battery is along with the development of industrialization, and everyways such as conversion efficiency lifting and cost reduction have had bigger progress, but its structure and technical characterstic have limited the further raising of its efficient.So multiple solution has appearred in industry, comprise selective emitter solar battery, back contact solar battery, HIT battery etc.With stylish technology, also promote for the further conversion efficiency of solar cell and cost reduces that provide may as the appearance of laser technology, LIP technology, photoetching technique etc.
In present efficient solar battery field, the focus that the HIT battery of Sanyo Electric development is solar cell area research and development with its efficient and stable performance always, not only efficient is than higher for the structure of this battery, and the thickness that can reduce the crystal silicon material makes the possibility that develops into of thinner crystal silicon solar battery.But it needs the type metal electrode in the front, has reduced the utilization ratio of sunlight significantly.
Summary of the invention
The purpose of this utility model is exactly provide at the defective of above-mentioned existence a kind of based on N-type silicon substrate back-contact HIT solar battery structure, the utility model is in conjunction with the preparation method of conventional crystal silicon solar battery and thin film solar cell, and with respect to traditional HIT battery, not only preparation process is simple, reduce the use amount of metal electrode, and avoid the problem of conventional solar cell front electrode shading, improved the efficient of solar cell.
Of the present utility model a kind of be that its structure is based on N-type silicon substrate back-contact HIT solar battery structure technical scheme: N-type silicon substrate sensitive surface is followed successively by sensitive surface n type amorphous or microcrystal silicon layer, antireflection layer from inside to outside; Shady face is followed successively by intrinsic amorphous or microcrystal silicon layer from inside to outside, have between p-type amorphous or microcrystal silicon layer and shady face n type amorphous or the microcrystal silicon layer at interval and alternately be arranged on intrinsic amorphous or the microcrystal silicon layer, all be coated with transparent conductive film on p-type amorphous or microcrystal silicon layer and shady face n type amorphous or the microcrystal silicon layer, metal electrode is positioned on the transparent conductive film.
Intrinsic amorphous or microcrystal silicon layer, shady face p-type amorphous or microcrystal silicon layer, shady face n type amorphous or microcrystal silicon layer, transparent conductive film, sensitive surface n type amorphous or microcrystal silicon, antireflection layer thickness range are 1 ~ 5000nm.
The thickness of p-type amorphous or microcrystal silicon layer, sensitive surface n type amorphous or microcrystal silicon layer, shady face n type amorphous or microcrystal silicon layer, intrinsic amorphous or microcrystal silicon layer and transparent conductive film is preferably 12nm, 12nm, 12nm, 10nm and 15nm.
P-type amorphous or microcrystal silicon layer and shady face n type amorphous or microcrystal silicon layer be spaced apart 0.01 ~ 10000um.
The interval of p-type amorphous or microcrystal silicon layer and shady face n type amorphous or microcrystal silicon layer is preferably 20um.
A kind of above-mentioned preparation method based on N-type silicon substrate back-contact HIT solar battery structure may further comprise the steps:
(1) the deposition sensitive surface n type amorphous of the N-type silicon substrate sensitive surface after making herbs into wool or microcrystal silicon layer;
(2) at shady face deposition intrinsic amorphous or microcrystal silicon layer;
(3) at sensitive surface deposition antireflection layer;
(4) carrying out p-type amorphous or microcrystal silicon at interval at shady face mixes;
(5) carry out n type amorphous or microcrystal silicon doping in p-type amorphous or other zones outside the microcrystal silicon doping of shady face;
(6) carry out the transparent conductive film preparation at shady face;
(7) the p-type amorphous of shady face or microcrystal silicon mixes and shady face n type amorphous or microcrystal silicon doped region between carry out radium-shine cutting, make p-type amorphous or microcrystal silicon layer and shady face n type amorphous or microcrystal silicon layer separate;
(8) on the nesa coating of shady face p-type amorphous or microcrystal silicon layer and shady face n type amorphous or microcrystal silicon layer, carry out the metal electrode preparation respectively.
Wherein, a kind of method in printing, sputter or the ink-jet is adopted in the metal electrode preparation.Metal electrode material can adopt metal, metal alloy, inorganic metal etc.
Carry out p-type amorphous or microcrystal silicon and mix, and the ion implantation of carrying out n type amorphous or microcrystal silicon doping employing band mask version in p-type amorphous or other zones outside the microcrystal silicon doping of shady face.
Under the situation that does not influence solar battery structure, preparation process can be done certain adjustment, prepares the shady face structure again after can be earlier finishing the preparation of sensitive surface structure, and perhaps sensitive surface prepares the preparation of carrying out one step of shady face or multistep after a step or the multistep then.
The beneficial effects of the utility model are: the utility model is in conjunction with the preparation method of conventional crystal silicon solar battery and thin film solar cell, and with respect to traditional HIT battery, not only preparation process is simple, reduce the use amount of metal electrode, and avoid the problem of conventional solar cell front electrode shading, improved the efficient of solar cell.
Use technical solutions of the utility model, made efficient and be 23.55% solar cell, its major parameter is as shown in table 1, reaches the efficient of the two-sided HIT solar cell 24.7% of Sanyo Electric nearly, through further optimizing, can surpass 24.7% efficient in experiment.
Description of drawings:
Figure 1 shows that structural representation of the present utility model.
Among the figure, 1.N type silicon substrate; 2. intrinsic amorphous or microcrystal silicon layer; 3.p type amorphous or microcrystal silicon layer; 4. shady face n type amorphous or microcrystal silicon layer; 5. transparent conductive film; 6. metal electrode; 7. sensitive surface n type amorphous or microcrystal silicon; 8. antireflection layer.
Embodiment:
In order to understand the utility model better, describe the technical solution of the utility model in detail below in conjunction with accompanying drawing, but the utility model is not limited thereto.
With reference to Figure of description Fig. 1, N-type silicon substrate 1 sensitive surface is followed successively by sensitive surface n type amorphous or microcrystal silicon layer 7, antireflection layer 8 from inside to outside; Shady face is followed successively by intrinsic amorphous or microcrystal silicon layer 2 from inside to outside, have between p-type amorphous or microcrystal silicon layer 3 and shady face n type amorphous or the microcrystal silicon layer 4 at interval and alternately be arranged on intrinsic amorphous or the microcrystal silicon layer 2, all be coated with transparent conductive film 5 on p-type amorphous or microcrystal silicon layer 3 and shady face n type amorphous or the microcrystal silicon layer 4, metal electrode 6 is positioned on the transparent conductive film 5.
The thickness of p-type amorphous or microcrystal silicon layer 3, sensitive surface n type amorphous or microcrystal silicon layer 7, shady face n type amorphous or microcrystal silicon layer 4, intrinsic amorphous or microcrystal silicon layer 2 and transparent conductive film 5 is preferably 12nm, 12nm, 12nm, 10nm and 15nm.
The interval of p-type amorphous or microcrystal silicon layer 3 and shady face n type amorphous or microcrystal silicon layer 4 is preferably 20um.
Above-mentioned preparation method based on N-type silicon substrate back-contact HIT solar battery structure may further comprise the steps:
(1) the deposition sensitive surface n type amorphous of N-type silicon substrate 1 sensitive surface after making herbs into wool or microcrystal silicon layer 7;
(2) at shady face deposition intrinsic amorphous or microcrystal silicon layer 2;
(3) at sensitive surface deposition antireflection layer 8;
(4) carrying out p-type amorphous or microcrystal silicon at interval at shady face mixes;
(5) carry out n type amorphous or microcrystal silicon doping in p-type amorphous or other zones outside the microcrystal silicon doping of shady face;
(6) carry out transparent conductive film 5 preparations at shady face;
(7) the p-type amorphous of shady face or microcrystal silicon mix with shady face n type amorphous or microcrystal silicon doped region between carry out radium-shine cutting, make p-type amorphous or microcrystal silicon layer 3 and shady face n type amorphous or microcrystal silicon layer 4 separate;
(8) on the nesa coating 5 of shady face p-type amorphous or microcrystal silicon layer 3 and shady face n type amorphous or microcrystal silicon layer 4, carry out metal electrode 6 preparations respectively, in structure, adopt metal electrode silver.
Carry out p-type amorphous or microcrystal silicon and mix, and the ion implantation of carrying out n type amorphous or microcrystal silicon doping employing band mask version in p-type amorphous or other zones outside the microcrystal silicon doping of shady face.
Use technical solutions of the utility model, made efficient and be 23.55% solar cell, its major parameter is as shown in table 1, reaches the efficient of the two-sided HIT solar cell 24.7% of Sanyo Electric nearly, through further optimizing, can surpass 24.7% efficient in experiment:
Table 1
Under the situation that does not influence solar battery structure, preparation process can be done certain adjustment, prepares the shady face structure again after can be earlier finishing the preparation of sensitive surface structure, and perhaps sensitive surface prepares the preparation of carrying out one step of shady face or multistep after a step or the multistep then.
Claims (5)
1. one kind based on N-type silicon substrate back-contact HIT solar battery structure, it is characterized in that its structure is: N-type silicon substrate sensitive surface is followed successively by sensitive surface n type amorphous or microcrystal silicon layer, antireflection layer from inside to outside; Shady face is followed successively by intrinsic amorphous or microcrystal silicon layer from inside to outside, have between p-type amorphous or microcrystal silicon layer and shady face n type amorphous or the microcrystal silicon layer at interval and alternately be arranged on intrinsic amorphous or the microcrystal silicon layer, all be coated with transparent conductive film on p-type amorphous or microcrystal silicon layer and shady face n type amorphous or the microcrystal silicon layer, metal electrode is positioned on the transparent conductive film.
2. described based on N-type silicon substrate back-contact HIT solar battery structure according to claim 1, it is characterized in that intrinsic amorphous or microcrystal silicon layer, shady face p-type amorphous or microcrystal silicon layer, shady face n type amorphous or microcrystal silicon layer, transparent conductive film, sensitive surface n type amorphous or microcrystal silicon, antireflection layer thickness range are 1 ~ 5000nm.
3. described based on N-type silicon substrate back-contact HIT solar battery structure according to claim 2, it is characterized in that the thickness of p-type amorphous or microcrystal silicon layer, sensitive surface n type amorphous or microcrystal silicon layer, shady face n type amorphous or microcrystal silicon layer, intrinsic amorphous or microcrystal silicon layer and transparent conductive film is respectively 12nm, 12nm, 12nm, 10nm and 15nm.
4. it is characterized in that based on N-type silicon substrate back-contact HIT solar battery structure according to claim 1 is described, p-type amorphous or microcrystal silicon layer and shady face n type amorphous or microcrystal silicon layer be spaced apart 0.01 ~ 10000um.
5. it is characterized in that based on N-type silicon substrate back-contact HIT solar battery structure according to claim 4 is described, p-type amorphous or microcrystal silicon layer and shady face n type amorphous or microcrystal silicon layer be spaced apart 20um.
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| CN 201220643086 CN203055963U (en) | 2012-11-29 | 2012-11-29 | N-type silicon substrate based back contact type HIT (Heterojunction with Intrinsic Thin layer) solar cell structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102931269A (en) * | 2012-11-29 | 2013-02-13 | 山东力诺太阳能电力股份有限公司 | N-type silicon substrate based back contact type HIT (Heterojunction with Intrinsic Thin layer) solar cell structure and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102931269A (en) * | 2012-11-29 | 2013-02-13 | 山东力诺太阳能电力股份有限公司 | N-type silicon substrate based back contact type HIT (Heterojunction with Intrinsic Thin layer) solar cell structure and preparation method thereof |
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Granted publication date: 20130710 Termination date: 20211129 |