CN203038915U - TO-252-3LB lead frame structure - Google Patents
TO-252-3LB lead frame structure Download PDFInfo
- Publication number
- CN203038915U CN203038915U CN2012206529509U CN201220652950U CN203038915U CN 203038915 U CN203038915 U CN 203038915U CN 2012206529509 U CN2012206529509 U CN 2012206529509U CN 201220652950 U CN201220652950 U CN 201220652950U CN 203038915 U CN203038915 U CN 203038915U
- Authority
- CN
- China
- Prior art keywords
- pin
- sides
- vin
- power supply
- link position
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 241000218202 Coptis Species 0.000 claims abstract description 5
- 235000002991 Coptis groenlandica Nutrition 0.000 claims abstract description 5
- 238000003466 welding Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052802 copper Inorganic materials 0.000 abstract description 6
- 239000010949 copper Substances 0.000 abstract description 6
- 238000012797 qualification Methods 0.000 abstract description 3
- 238000005538 encapsulation Methods 0.000 description 3
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
The utility model provides a TO-252-3LB lead frame structure, it is guaranteed TO be used for 3 or 4 copper lines of one side pin bonding of power input foot VIN, and the bonding is stable, ensures the qualification rate of product. It includes base island, middle pin, both sides pin, the base island is connected middle pin, the both sides pin is located the both sides of middle pin, the chip install in the base island, the land of chip passes through gold thread/or copper wire bonding connection the both sides pin, one of them is used for power input foot VIN in the both sides pin, its characterized in that: the connecting position of the middle pin and the base island is far away from the position of one side of the power input pin VIN, and the bonding area of the power input pin VIN is larger than that of the other side pin.
Description
Technical field
The utility model relates to the technical field of encapsulation, is specially a kind of TO-252-3LB lead frame structure.
Background technology
The lead frame of the TO-252-3LB encapsulation pattern of standard is seen Fig. 1, it is a basic island 1, middle pin 2, both sides pin 3,4, chip 5 is placed on the basic island 1, base island 1 links to each other with middle pin 2, middle pin 2 is positioned at a side center on basic island 1, both sides pin 3,4 are symmetrically arranged in the both sides of middle pin 2, and both sides pin shape symmetry, gold thread or copper wire bonding chip welding zone and lead frame both sides pin 3, on 4, the product of TO252-3L encapsulation is big electric current often, high-power drive circuit device, sometimes just need to be used for 2 above copper cash of a side pin bonding of power supply input pin VIN, the TO252-3L framework both sides pin shape symmetric arrangement of existing standard, cause the bonding zone less, can only 2 copper cash of bonding, when 3 of arts demand bondings or 4 copper cash, not firm or the phenomenon that can't bonding of bonding can occur, can cause the inefficacy of product, reduce product percent of pass.
Summary of the invention
At the problems referred to above, the utility model provides a kind of TO-252-3LB lead frame structure, and when it guaranteed for 3 or 4 copper cash of a side pin bonding of power supply input pin VIN, bonding was stable, guaranteed the qualification rate of product.
A kind of TO-252-3LB lead frame structure, its technical scheme is such: it comprises Ji Dao, middle pin, the both sides pin, described Ji Dao connects described middle pin, described both sides pin is positioned at the both sides of described middle pin, chip is installed on described Ji Dao, the welding zone of described chip by gold thread/or copper wire bonding connect described both sides pin, one of them is used for power supply input pin VIN in the pin of described both sides, it is characterized in that: the link position of pin and described Ji Dao is away from the side position of described power supply input pin VIN in the middle of described, the bonding region of described power supply input pin VIN is greater than the bonding region of opposite side pin, and the distance of the opposite side outline line of the link position of the distance of this side wheel profile of the link position of the nearside wheel profile of the bonding region of described power supply input pin VIN and described middle pin and the nearside wheel profile of described opposite side pin and described middle pin equates.
It is further characterized in that: the link position of pin is near described opposite side pin in the middle of described, pin is connected for the oblique line bar with described link position in the middle of described, and the nearside wheel profile of the bonding region of described power supply input pin VIN is parallel to this side outer contour of described oblique line bar, link position and arranges.
After adopting the utility model, because the link position of middle pin and described Ji Dao is away from the side position of described power supply input pin VIN, the bonding region of described power supply input pin VIN is greater than the bonding region of opposite side pin, make the bonding region area of power supply input pin VIN increase, when guaranteeing 3 or 4 copper cash of a side pin bonding for power supply input pin VIN, bonding is stable, guarantees the qualification rate of product.
Description of drawings
Fig. 1 is the structural representation of existing TO-252-3LB lead frame;
Fig. 2 is structural representation of the present utility model.
Embodiment
See Fig. 2, it comprises basic island 1, middle pin 2, both sides pin 3,4, pin 2 in the middle of base island 1 connects, both sides pin 3,4 are positioned at the both sides of middle pin 2, chip 5 is installed on basic island 1, the welding zone of chip 5 by gold thread/or copper wire bonding connect both sides pin 3,4, one of them pin 3 is used for power supply input pin VIN in the pin of both sides, the link position on middle pin 2 and basic island 1 is away from the side position of power supply input pin VIN, the bonding region of power supply input pin VIN is greater than the bonding region of opposite side pin 4, and the distance of the opposite side outline line of the link position 6 of the distance of this side wheel profile of the nearside wheel profile of the bonding region of power supply input pin VIN and the link position 6 of middle pin 2 and the nearside wheel profile of opposite side pin 4 and middle pin 2 equates.The link position 6 of middle pin 2 is near opposite side pins 4, and middle pin 2 and link position 6 are connected for oblique line bar 7, and the nearside wheel profile of the bonding region of power supply input pin VIN is parallel to this side outer contour layout of oblique line bar 7, link position 6.
Claims (2)
1. TO-252-3LB lead frame structure, it comprises Ji Dao, middle pin, the both sides pin, described Ji Dao connects described middle pin, described both sides pin is positioned at the both sides of described middle pin, chip is installed on described Ji Dao, the welding zone of described chip by gold thread/or copper wire bonding connect described both sides pin, one of them is used for power supply input pin VIN in the pin of described both sides, it is characterized in that: the link position of pin and described Ji Dao is away from the side position of described power supply input pin VIN in the middle of described, the bonding region of described power supply input pin VIN is greater than the bonding region of opposite side pin, and the distance of the opposite side outline line of the link position of the distance of this side wheel profile of the link position of the nearside wheel profile of the bonding region of described power supply input pin VIN and described middle pin and the nearside wheel profile of described opposite side pin and described middle pin equates.
2. a kind of TO-252-3LB lead frame structure according to claim 1, it is characterized in that: the link position of pin is near described opposite side pin in the middle of described, pin is connected for the oblique line bar with described link position in the middle of described, and the nearside wheel profile of the bonding region of described power supply input pin VIN is parallel to this side outer contour of described oblique line bar, link position and arranges.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012206529509U CN203038915U (en) | 2012-12-03 | 2012-12-03 | TO-252-3LB lead frame structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012206529509U CN203038915U (en) | 2012-12-03 | 2012-12-03 | TO-252-3LB lead frame structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203038915U true CN203038915U (en) | 2013-07-03 |
Family
ID=48691008
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012206529509U Expired - Lifetime CN203038915U (en) | 2012-12-03 | 2012-12-03 | TO-252-3LB lead frame structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203038915U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103000606A (en) * | 2012-12-03 | 2013-03-27 | 无锡红光微电子有限公司 | TO-252-3LB lead frame structure |
-
2012
- 2012-12-03 CN CN2012206529509U patent/CN203038915U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103000606A (en) * | 2012-12-03 | 2013-03-27 | 无锡红光微电子有限公司 | TO-252-3LB lead frame structure |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130703 |