CN203011544U - An apd single-photon detector - Google Patents
An apd single-photon detector Download PDFInfo
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- CN203011544U CN203011544U CN 201220644772 CN201220644772U CN203011544U CN 203011544 U CN203011544 U CN 203011544U CN 201220644772 CN201220644772 CN 201220644772 CN 201220644772 U CN201220644772 U CN 201220644772U CN 203011544 U CN203011544 U CN 203011544U
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Abstract
The utility model discloses an APD single-photon detector comprising a positive and negative bipolar narrow pulse generating circuit, a double-APD balancing circuit, an avalanche signal extracting circuit, and an avalanche signal discriminating output circuit which are connected successively. The double-APD balancing circuit comprises two avalanche photodiodes which are connected in series and which have same junction capacitance. The two ends of a unit in which the two avalanche photodiodes are connected in series are connected with a positive bias voltage and a negative bias voltage, respectively. The two avalanche photodiodes are connected with the two output ends of the positive and negative bipolar narrow pulse generating circuit, respectively. The avalanche signal extracting circuit comprises sampling circuits used for converting avalanche current generated by the avalanche photodiodes into voltage. The output ends of the sampling circuits are connected with a differential operational amplifier used for performing differential elimination on the capacitive noise generated by the two avalanche photodiodes. The input end of the avalanche signal discriminating output circuit is connected with the output end of the differential operational amplifier. The detector suppresses APD peak noise perfectly while achieving high suppression ratio and achieves peak noise balancing suppression detection with wide frequency domain frequency domain and high operating frequency.
Description
[technical field]
The present invention relates to a kind of APD single-photon detector, belong to that the high speed quantum is surveyed and sensitive photodetection field.
[background technology]
The sensitivity that improves constantly photodetection is basic point and the key of exploring and disclose microworld rule and development important front edge science and new and high technology.The observing and controlling of high-level efficiency single photon be not only that the front subjects such as Modern information science, quantum technology, precision measurement, hypersensitive detection explore in the urgent need to, also for the great scientific researches such as quantum regulation and control, research in nanotechnology, protein research and single quantum state observing and controlling provide important technology and device, and then intersect with new branch of science such as surface plasmons, infrared photon, molectronicses the development that promotes constantly a series of new and high technologies.Sensitive photoelectric measurement has become one of basis most crucial in the aerospace technology development, in transmission and the fields such as detection, hypersensitive laser ranging and accurate location of infrared signal, important application is arranged also.on the other hand, improve constantly the detection sensitivity of spectrum, particularly reach the hypersensitivity of quantum limit by the single-photon detecting survey technology, become an important new direction of modern precision spectroscopy development, has boundless application prospect in the spectrum trace analysis that needs Feebleness Light Signal Examining and metering field: as environment or industrial pollution monitoring, the sensitive trace analysis of customs's drugs explosives detection and police reconnaissance, the sensitive early warning of the safety in production such as coal mine chemical industry, the sensitivity leak detection of poisonous hazardous gas, the sensitive analysis of bioluminescence and biomolecule etc., also can be used for realizing the supersensitive spectrographic detection of single quantum regime such as unimolecule and single quantum dot.Single photon detection is also in many important applied field, such as quantum secret communication, quantum communication network, quantum assault, there is very important application the aspects such as quantum time synchronized, laser satellite radar, infrared electro detection, quantum regulation and control, information security.Efficient low noise single-photon detecting survey technology has become the core of development hypersensitivity photodetection.
Near-infrared single photon detector is in the application of communication band, and the quantum key distribution technology may be one of field of greatest concern.The communication system and the cipher mode that widely use now can be ravesdropping in principle, have potential safety hazard.Quantum secret communication system be a kind of with single photon or entangled photons to the secret signalling that is perfectly safe as information carrier.When using the single photon transmission information between information source and the stay of two nights, due to the loss in the long-distance optical fiber channel, can lose the single photon of a large amount of carry informations, in order to realize practical quantum key distribution technology, it is that high with the higher frequency of operation of signal to noise ratio (S/N ratio) improves into code check that detector need to have higher detection efficiency, the lower digit rate of calculating mentally.The high-speed and high-efficiency single photon detection is the indispensable critical equipment of quantum infotech such as the linear light quantum calculating of development, quantum secret communication network equally.
Near-infrared single photon survey to need solves APD Geiger pattern saturated gain and exhausts charge carrier, single-photon avalanche signal less than the APD(avalanche photodide) bottleneck problem such as junction capacity noise.In order to realize the low light level input under the single photon level, avalanche photodide often needs to be operated under saturated gain pattern Geiger pattern to respond single photon.Yet, so can make photo-generated carrier exhaust rapidly under high-gain, be difficult in the short time recover, limit its frequency of operation, and can't realize the photon number resolved detection.High-gain is equally also brought large noise, often takes thresholding coincidence counting pattern for reducing noise, and wherein, avalanche photodide junction capacity noise spike noise can flood the avalanche signal of photo-generated carrier usually.Therefore how realizing the stable extraction of avalanche signal, is the matter of utmost importance that realizes that near-infrared single photon is surveyed.Usually avalanche photodide all is operated under door model, namely when not needing to survey the bias voltage at APD two ends less than avalanche voltage, when needs are surveyed, negative electrode at APD applies a positive voltage gate pulse, APD only is in Geiger mode angular position digitizer within the time of gatewidth, can carry out single photon detection.Be different from the continuous probe pattern, when the time that photon arrives can be predicted, it was the highest detection method of signal to noise ratio (S/N ratio) that gate pulse suppresses circuit, reason is that APD only opens when photon arrives, be in Geiger mode angular position digitizer, and all be in off state at other moment APD, can not produce any noise count.Suppress circuit based on gate pulse, can realize the detection rate of GHz, but because APD is capacitive device, gate pulse can produce a differential signal by the junction capacity of APD on sample resistance, we are referred to as spike noise, and the amplitude of spike noise increases along with the raising of repetition frequency, become to cover the topmost noise of avalanche signal, how to suppress the spike noise that gate pulse produces, extracting avalanche signal is also one of technology of single photon detection primary study in recent years.
Detection Techniques based on the gate pulse mode of operation, its core is constantly to lower the amplitude of incremental noise and the degree of discrimination that improves avalanche signal, and the detection method of main flow is the thought that adopts balance at present, namely generate one and the similar common-mode signal of spike noise, offset this common-mode signal by the differential mode network, thereby extract avalanche signal.Two APD balance schemes as a kind of efficient detection method, can be simulated the generation spike noise effectively, reach higher rejection ratio.In enforcement, this scheme adopts the avalanche mode of unipolarity bias voltage mostly, the voltage amplitude and the waveform that load on two APD can't be regulated according to the difference of two APD, the noise balance of surveying suppresses to be subject to APD difference performance, the pulsed bias voltage that loads on APD is limited, can't obtain higher detection efficiency and the lower number of calculating mentally, the enforcement of scheme is subject to can't realizes adjustable balancing according to APD difference fully.In addition, adopt the tunable capacitor balance method, substitute the APD simulation with tunable capacitor and produce spike noise, but the junction capacity structure of APD is very complicated, the response of different frequency electric capacity is different, particularly at high frequency region, the capacitive noise of APD is with to load voltage amplitude on it and frequency and waveform closely related, be difficult to produce identical capacitive response effect with capacitance simulation, so the rejection ratio of capacitance balancing mostly less than the rejection ratio of two APD balances, generally is only suitable for the detection of specific narrower frequency domain and low frequency of operation.
[summary of the invention]
The present invention has overcome the deficiency of above-mentioned technology, and a kind of APD single-photon detector is provided, and this detector can more perfectly suppress the APD spike noise, reaches very high rejection ratio, realizes that the spike noise balance of wider frequency territory and higher operational frequency suppresses to survey.
For achieving the above object, the present invention has adopted following technical proposal:
a kind of APD single-photon detector comprises the positive negative bipolar narrow-pulse generation circuit 1 that connects in turn, two APD balancing circuitrys 4, and avalanche signal extracts circuit 5, and avalanche signal is differentiated output circuit 6, described pair of APD balancing circuitry 4 comprises two the first avalanche photodide D3 with identical junction capacity, the second avalanche photodide D4, be connected with positive polarity bias 2 on the negative pole of the first avalanche photodide D3, the negative pole of the first avalanche photodide D3 is connected with the positive polarity burst pulse output terminal of positive negative bipolar narrow-pulse generation circuit 1, the positive pole of the first avalanche photodide D3 is connected with the negative pole of the second avalanche photodide D4, the second avalanche photodide D4 is anodal to be connected with the negative polarity burst pulse output terminal of positive negative bipolar narrow-pulse generation circuit 1, be connected with negative polarity bias voltage 3 on the second avalanche photodide D4 positive pole, described avalanche signal extracts circuit 5 and comprises that the avalanche current that the first avalanche photodide D3 is produced changes the first sample circuit 51 of voltage and the second sample circuit 52 that the avalanche current that the second avalanche photodide D4 produces is changed into voltage into, output terminal at the first sample circuit 51 and the second sample circuit 52 is connected with the first avalanche photodide D3, the capacitive noise that the second avalanche photodide D4 produces carries out the differential operational amplifier 53 that difference is eliminated, described avalanche signal differentiates that the input end of output circuit 6 is connected on the output terminal of differential operational amplifier 53.
Be connected with the first current-limiting resistance R21 between the negative pole of the first avalanche photodide D3 and positive polarity bias 2, be connected with the second current-limiting resistance R41 at the second avalanche photodide D4 between anodal and negative polarity bias voltage 3.
Described positive negative bipolar narrow-pulse generation circuit 1 comprises the clock signal generator 11 that connects in turn, be used for transferring the differentiating circuit 12 of pulsewidth, produce the High Speed ECL comparer 13 of positive and negative two-way symmetrical pulse, make be consistent pulse and amplitude of positive and negative two-way pulse be added in compression shaping amplifying circuit 14 on the first avalanche photodide D3, the second avalanche photodide D4.
Described differentiating circuit 12 comprises capacitor C 2 and resistance R 10, one end of capacitor C 2 is connected with the output terminal of clock signal generator 11, the other end of capacitor C 2 is connected with the normal phase input end that an end of resistance R 10 is connected with the High Speed ECL comparer, the other end ground connection of resistance R 10.The accurate voltage that the inverting input of described High Speed ECL comparer 13 is provided by the outside is threshold value as a comparison, and described High Speed ECL comparer 13 is provided with the first output terminal Q of output positive pulse and the second output terminal of output negative pulse
Compression shaping amplifying circuit 14 comprises the first broad band amplifier 141 and the second broad band amplifier 142, be connected with the input end of the first narrowing circuit 143, the second broad band amplifiers 142 and the second output terminal of High Speed ECL comparer 13 between the first output terminal Q of the input end of the first broad band amplifier 141 and High Speed ECL comparer 13
Between be connected with the second narrowing circuit 144.
Be connected with clamping circuit between the first avalanche photodide D3 negative pole, the second avalanche photodide D4 positive pole and the first broad band amplifier 141, the second broad band amplifier 142 output terminals.
Described the first sample circuit 51 comprises the first sample resistance R36 and the first line transformer T1, the first sample resistance R36 is connected between the first avalanche photodide D3 positive pole and negative polarity bias voltage 3, the primary coil two ends of the first line transformer T1 are connected to the first sample resistance R36 two ends, secondary coil one end of the first line transformer T1 is connected with an input end of differential operational amplifier 53, the secondary coil other end ground connection of the first line transformer T1; Described the second sample circuit 52 comprises the second sample resistance R26 and the second line transformer T2, the second sample resistance R26 is connected between the second avalanche photodide D4 positive pole and negative polarity bias voltage 3, the primary coil two ends of the second line transformer T2 are connected to the second sample resistance R26 two ends, secondary coil one end of the second line transformer T2 is connected with another input end of differential operational amplifier 53, the secondary coil other end ground connection of the second line transformer T2.
Described avalanche signal differentiates that output circuit 6 comprises discriminating high-speed comparator 61.
Compared with prior art, the invention has the beneficial effects as follows: the avalanche mode of having abandoned traditional unipolarity bias voltage, adopted the bipolarity gate pulse to coordinate the bipolarity bias voltage to encourage two avalanche photodides, compare with similar technology, in the situation that identical bias voltage amplitude and gated pulse amplitude can obtain higher detection efficiency, and the lower number of calculating mentally, and the method that has adopted two APD balances is eliminated the capacitive noise of APD junction capacity, can realize high-speed cruising, the each several part circuit working is stable, and realization that can be good is efficiently surveyed the near-infrared band single photon.
[description of drawings]
Fig. 1 is circuit block diagram of the present invention;
Fig. 2 is the connection diagram that of the present invention pair of APD balancing circuitry and avalanche signal extract circuit;
Fig. 3 is the circuit theory diagrams of positive negative bipolar narrow-pulse generation circuit of the present invention;
Fig. 4 is that the present invention is the circuit theory diagrams that avalanche signal extracts circuit and avalanche signal discriminating output circuit.
[embodiment]
Below the present invention is described in further detail in conjunction with the instantiation mode by accompanying drawing:
as Fig. 1-2, the present invention introduces a kind of APD single-photon detector, comprises the positive negative bipolar narrow-pulse generation circuit 1 that connects in turn, two APD balancing circuitrys 4, and avalanche signal extracts circuit 5, and avalanche signal is differentiated output circuit 6, described pair of APD balancing circuitry 4 comprises two the first avalanche photodide D3 with identical junction capacity, the second avalanche photodide D4, be connected with positive polarity bias 2 on the negative pole of the first avalanche photodide D3, the negative pole of the first avalanche photodide D3 is connected with the positive polarity burst pulse output terminal of positive negative bipolar narrow-pulse generation circuit 1, the positive pole of the first avalanche photodide D3 is connected with the negative pole of the second avalanche photodide D4, the second avalanche photodide D4 is anodal to be connected with the negative polarity burst pulse output terminal of positive negative bipolar narrow-pulse generation circuit 1, be connected with negative polarity bias voltage 3 on the second avalanche photodide D4 positive pole, described avalanche signal extracts circuit 5 and comprises that the avalanche current that the first avalanche photodide D3 is produced changes the first sample circuit 51 of voltage and the second sample circuit 52 that the avalanche current that the second avalanche photodide D4 produces is changed into voltage into, output terminal at the first sample circuit 51 and the second sample circuit 52 is connected with the first avalanche photodide D3, the capacitive noise that the second avalanche photodide D4 produces carries out the differential operational amplifier 53 that difference is eliminated, described avalanche signal differentiates that the input end of output circuit 6 is connected on the output terminal of differential operational amplifier 53.
Here adopted the avalanche photodide of two same models, guaranteed to greatest extent the consistance of its capacitance characteristic, after its series connection, then encourage respectively this pair APD with two gate pulses of same amplitude, frequency and pulsewidth, make the opposite spike of its polarization.
Be connected with the first current-limiting resistance R21 between the negative pole of the first avalanche photodide D3 and positive polarity bias 2, be connected with the second current-limiting resistance R41 at the second avalanche photodide D4 between anodal and negative polarity bias voltage 3.
As Fig. 3, described positive negative bipolar narrow-pulse generation circuit 1 comprises the clock signal generator 11 that connects in turn, differentiating circuit 12, High Speed ECL comparer 13, compression shaping amplifying circuit 14.
Clock signal generator 11 is for generation of clock signal.Differentiating circuit 12 is used for transferring pulsewidth, described differentiating circuit 12 comprises capacitor C 2 and resistance R 10, one end of capacitor C 2 is connected with the output terminal of clock signal generator 11, the other end of capacitor C 2 is connected with the normal phase input end that an end of resistance R 10 is connected with the High Speed ECL comparer, the other end ground connection of resistance R 10.The accurate voltage that the inverting input of described High Speed ECL comparer 13 is provided by the outside is threshold value as a comparison, and described High Speed ECL comparer 13 is provided with the first output terminal Q of output positive pulse and the second output terminal of output negative pulse
High Speed ECL comparer 13 produces positive and negative two-way symmetrical pulse respectively from the first output terminal Q and the second output terminal
Output.
Compression shaping amplifying circuit 14 is added on the first avalanche photodide D3, the second avalanche photodide D4 be consistent pulse and amplitude of positive and negative two-way pulse.Compression shaping amplifying circuit 14 comprises the first broad band amplifier 141 and the second broad band amplifier 142, be connected with the input end of the first narrowing circuit 143, the second broad band amplifiers 142 and the second output terminal of High Speed ECL comparer 13 between the first output terminal Q of the input end of the first broad band amplifier 141 and High Speed ECL comparer 13
Between be connected with the second narrowing circuit 144.The circuit structure of the first narrowing circuit 143, the second narrowing circuits 144 is identical.The first narrowing circuit 143 is by resistance R 2, R3, R4, R5, and fixed capacity C1 and tunable capacitor C9 form, and the second narrowing circuit 144 is by resistance R 12, R13, R15, R16, and fixed capacity C5 and tunable capacitor C10 form.
The clock signal that clock signal generator 11 produces forms by the differentiating circuit that C2 and R10 form the normal phase input end that differential signal enters High Speed ECL comparer 13 again, the accurate voltage that its inverting input is provided by the outside is threshold value as a comparison, can be obtained by electric resistance partial pressure, also can be provided by voltage source, the pulse width of High Speed ECL comparer 13 outputs is exactly to be determined by compare threshold, and High Speed ECL comparer 13 has the first output terminal Q and the second output terminal
The signal of output is symmetrical, positive and negative opposite pulse, and after they compressed by narrowing circuit respectively, the two-way pulse improved its amplitude by broad band amplifier respectively again, finally exported A, B two-way burst pulse.
As Fig. 4, be connected with clamping circuit between the first avalanche photodide D3 negative pole, the second avalanche photodide D4 positive pole and the first broad band amplifier 141, the second broad band amplifier 142 output terminals.Clamping circuit is comprised of schottky diode D1, D2 and capacitor C 8, C6, and clamping circuit clamps down on reference level in the position at zero point.
Described the first sample circuit 51 comprises the first sample resistance R36 and the first line transformer T1, the first sample resistance R36 is connected between the first avalanche photodide D3 positive pole and negative polarity bias voltage 3, the primary coil two ends of the first line transformer T1 are connected to the first sample resistance R36 two ends, secondary coil one end of the first line transformer T1 is connected with an input end of differential operational amplifier 53, the secondary coil other end ground connection of the first line transformer T1; Described the second sample circuit 52 comprises the second sample resistance R26 and the second line transformer T2, the second sample resistance R26 is connected between the second avalanche photodide D4 positive pole and negative polarity bias voltage 3, the primary coil two ends of the second line transformer T2 are connected to the second sample resistance R26 two ends, secondary coil one end of the second line transformer T2 is connected with another input end of differential operational amplifier 53, the secondary coil other end ground connection of the second line transformer T2.
Avalanche signal differentiates that output circuit 6 comprises discriminating high-speed comparator 61.
Power supply VCC and VEE are the positive negative bipolar high pressure that is provided by the outside, they converge by two gate pulses of current-limiting resistance R21 and R41 and 1 output of positive negative bipolar narrow-pulse generation circuit respectively, jointly are carried in the two ends of the first avalanche photodide D3, the second avalanche photodide D4.described the first sample resistance R36 is used for changing the avalanche current that the first avalanche photodide D3 produces into voltage, then the first line transformer T1 that is 1:1 by turn ratio transfers signals to rear class, meanwhile, the bipolarity high pressure also is carried on another second avalanche photodide D4 with identical junction capacity with pulse simultaneously, it is closely similar that the capacitive noise of its generation and the first avalanche photodide D3 produce, described the second sample resistance R26 is used for changing the avalanche current that the second avalanche photodide D4 produces into voltage, then the second line transformer T2 that is 1:1 by turn ratio transfers signals to rear class, the first line transformer T1, the signal of the second line transformer T2 output enters differential operational amplifier 53 simultaneously, so, the capacitive noise of the first avalanche photodide D3 is just well eliminated, avalanche signal is just well revealed.The avalanche signal that is being mingled with a small amount of noise is differentiated by discriminating high-speed comparator 61, thereby is obtained efficient single photon counting.
The present invention utilizes Narrow Bipolar to coordinate the bipolarity bias voltage as the driving source of avalanche photodide, has reduced traditional door model for the requirement of gate pulse, has realized the detection of high speed near-infrared single photon.The components and parts that use can followingly be selected:
C1:5pF C2:100pF C5:5pF C6:15nF C8:15nF
The adjustable C10:20pF of C9:20pF is adjustable
C20:15pF C415:0.1uF C416:56uF C417:0.1uF
C418:0.1uF C420:0.1uF C421:0.1uF C424:0.1uF
R1:300Ω R2:150Ω R3:150Ω R4:150Ω R5:150Ω
R6:100Ω R7:300Ω R8:300Ω R9:300Ω R10:50Ω
R12:150Ω R13:150Ω R14:300Ω R15:150Ω R16:150Ω
R17:100Ω R18:300Ω R21:56kΩ R25:100Ω R26:50Ω
R27:50Ω R35:510Ω R36:50Ω R37:50Ω R40:510Ω
R41:56kΩ R413:25Ω R414:220Ω R415:10Ω R416:10Ω
R417:10kΩ R418:510Ω R419:510Ω
D1, D2: schottky diode
T1,T2:ETC1-1-13
U1:AD80009 U2:AD96685 U3:AD8351 U4:AD96685
Claims (9)
1. an APD single-photon detector, is characterized in that comprising the positive negative bipolar narrow-pulse generation circuit (1) that connects in turn, two APD balancing circuitrys (4), and avalanche signal extracts circuit (5), and avalanche signal is differentiated output circuit (6), described pair of APD balancing circuitry (4) comprises two the first avalanche optoelectronic pipe D3, the second avalanche optoelectronic pipe D4 with identical junction capacity, be connected with positive polarity bias (2) on the negative pole of the first avalanche optoelectronic pipe D3, the negative pole of the first avalanche optoelectronic pipe D3 is connected with the positive polarity burst pulse output terminal of positive negative bipolar narrow-pulse generation circuit (1), the positive pole of the first avalanche optoelectronic pipe D3 is connected with the negative pole of the second avalanche optoelectronic pipe D4, and the second avalanche optoelectronic pipe D4 is anodal to be connected with the negative polarity burst pulse output terminal of positive negative bipolar narrow-pulse generation circuit (1), be connected with negative polarity bias voltage (3) on the second avalanche optoelectronic pipe D4 positive pole, described avalanche signal extracts circuit (5) and comprises that the avalanche current that the first avalanche optoelectronic pipe D3 is produced changes first sample circuit (51) of voltage and the second sample circuit (52) that the avalanche current that the second avalanche optoelectronic pipe D4 produces is changed into voltage into, output terminal at the first sample circuit (51) and the second sample circuit (52) is connected with the first avalanche optoelectronic pipe D3, the capacitive noise that the second avalanche optoelectronic pipe D4 produces carries out the differential operational amplifier (53) that difference is eliminated, described avalanche signal differentiates that the input end of output circuit (6) is connected on the output terminal of differential operational amplifier (53).
2. a kind of APD single-photon detector according to claim 1, it is characterized in that being connected with the first current-limiting resistance R21 between the negative pole of the first avalanche optoelectronic pipe D3 and positive polarity bias (2), be connected with the second current-limiting resistance R41 at the second avalanche optoelectronic pipe D4 between anodal and negative polarity bias voltage (3).
3. a kind of APD single-photon detector according to claim 1 and 2, it is characterized in that described positive negative bipolar narrow-pulse generation circuit (1) comprises the clock signal generator (11) that connects in turn, be used for transferring the differentiating circuit (12) of pulsewidth, produce the High Speed ECL comparer (13) of positive and negative two-way symmetrical pulse, make be consistent pulse and amplitude of positive and negative two-way pulse be added in compression shaping amplifying circuit (14) on the first avalanche optoelectronic pipe D3, the second avalanche optoelectronic pipe D4.
4. a kind of APD single-photon detector according to claim 3, it is characterized in that described differentiating circuit (12) comprises capacitor C 2 and resistance R 10, one end of capacitor C 2 is connected with the output terminal of clock signal generator (11), the other end of capacitor C 2 is connected 13 with an end of resistance R 10 with the High Speed ECL comparer) normal phase input end be connected, the other end ground connection of resistance R 10.
5. a kind of APD single-photon detector according to claim 4, the accurate voltage that the inverting input that it is characterized in that described High Speed ECL comparer (13) is provided by the outside is threshold value as a comparison, and described High Speed ECL comparer (13) is provided with the first output terminal Q of output positive pulse and the second output terminal of output negative pulse
6. a kind of APD single-photon detector according to claim 5, it is characterized in that compression shaping amplifying circuit (14) comprises the first broad band amplifier (141) and the second broad band amplifier (142), be connected with the first narrowing circuit (143) between the first output terminal Q of the input end of the first broad band amplifier (141) and High Speed ECL comparer (13), the second output terminal of the input end of the second broad band amplifier (142) and High Speed ECL comparer (13)
Between be connected with the second narrowing circuit (144).
7. a kind of APD single-photon detector according to claim 6, is characterized in that being connected with clamping circuit between the first avalanche optoelectronic pipe D3 negative pole, the second avalanche optoelectronic pipe D4 positive pole and the first broad band amplifier (141), the second broad band amplifier (142) output terminal.
8. a kind of APD single-photon detector according to claim 1, it is characterized in that described the first sample circuit (51) comprises the first sample resistance R36 and the first line transformer T1, the first sample resistance R36 is connected between the first avalanche optoelectronic pipe D3 positive pole and negative polarity bias voltage (3), the primary coil two ends of the first line transformer T1 are connected to the first sample resistance R36 two ends, secondary coil one end of the first line transformer T1 is connected with an input end of differential operational amplifier (53), the secondary coil other end ground connection of the first line transformer T1, described the second sample circuit (52) comprises the second sample resistance R26 and the second line transformer T2, the second sample resistance R26 is connected between the second avalanche optoelectronic pipe D4 positive pole and negative polarity bias voltage (3), the primary coil two ends of the second line transformer T2 are connected to the second sample resistance R26 two ends, secondary coil one end of the second line transformer T2 is connected with another input end of differential operational amplifier (53), the secondary coil other end ground connection of the second line transformer T2.
9. a kind of APD single-photon detector according to claim 8, is characterized in that avalanche signal discriminating output circuit (6) comprises discriminating high-speed comparator (61).
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102998008A (en) * | 2012-11-28 | 2013-03-27 | 广东汉唐量子光电科技有限公司 | Symmetrical double-avalanche-photo-diode (APD) balanced near-infrared photon detector |
| CN106382993A (en) * | 2016-08-19 | 2017-02-08 | 浙江神州量子网络科技有限公司 | Optimal setting method for parameters of single-photon detector |
| CN107091687A (en) * | 2017-05-05 | 2017-08-25 | 重庆理工大学 | A kind of APD single-photon detectors circuit and avalanche signal discriminating method |
| CN114019482A (en) * | 2021-10-27 | 2022-02-08 | 北醒（北京）光子科技有限公司 | Photoelectric receiving circuit and laser ranging device with same |
| CN115622520A (en) * | 2022-12-16 | 2023-01-17 | 苏州珂晶达电子有限公司 | Charge amplifier |
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2012
- 2012-11-28 CN CN 201220644772 patent/CN203011544U/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102998008A (en) * | 2012-11-28 | 2013-03-27 | 广东汉唐量子光电科技有限公司 | Symmetrical double-avalanche-photo-diode (APD) balanced near-infrared photon detector |
| CN106382993A (en) * | 2016-08-19 | 2017-02-08 | 浙江神州量子网络科技有限公司 | Optimal setting method for parameters of single-photon detector |
| CN106382993B (en) * | 2016-08-19 | 2019-02-22 | 浙江神州量子网络科技有限公司 | A kind of parameter optimization setting method of single-photon detector |
| CN107091687A (en) * | 2017-05-05 | 2017-08-25 | 重庆理工大学 | A kind of APD single-photon detectors circuit and avalanche signal discriminating method |
| CN107091687B (en) * | 2017-05-05 | 2019-05-28 | 重庆理工大学 | A kind of APD single-photon detector circuit and avalanche signal discriminating method |
| CN114019482A (en) * | 2021-10-27 | 2022-02-08 | 北醒（北京）光子科技有限公司 | Photoelectric receiving circuit and laser ranging device with same |
| CN115622520A (en) * | 2022-12-16 | 2023-01-17 | 苏州珂晶达电子有限公司 | Charge amplifier |
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