CN105589091A - Cadmium zinc telluride (CZT) area gamma detector - Google Patents
Cadmium zinc telluride (CZT) area gamma detector Download PDFInfo
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- CN105589091A CN105589091A CN201510980202.1A CN201510980202A CN105589091A CN 105589091 A CN105589091 A CN 105589091A CN 201510980202 A CN201510980202 A CN 201510980202A CN 105589091 A CN105589091 A CN 105589091A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/208—Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section
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Abstract
The invention relates to a cadmium zinc telluride (CZT) area gamma detector, comprising a CZT detection crystal, a charge sensitive amplification circuit, an SK main amplification circuit, a single pulse amplitude analysis circuit and a high-voltage module circuit. The CZT detection crystal is in electric connection with the charge sensitive amplification circuit; the high-voltage module circuit is in electric connection with the charge sensitive amplification circuit; the output terminal of the charge sensitive amplification circuit is in connection with the input terminal of the SK main amplification circuit; the output terminal of the SK main amplification circuit is in electric connection with the input terminal of the single pulse amplitude analysis circuit; the output terminal of the single pulse amplitude analysis circuit outputs signal pulse. The CZT area gamma detector has the characteristics of high detection efficiency and sound search angle responsivity, and can work under room temperatures, and realize gamma ray high sensitivity and nondirectional discrimination measurement.
Description
Technical field
The present invention relates to field, nuclear radiation monitoring field, is specifically related to a kind of tellurium zinc cadmium CZT region gamma detector.
Background technology
Region γ monitoring system is mainly used in the Real-Time Monitoring of the gamma-rays close rate of key area at present, all types of detectors in system are realized the conversion of physics ray and voltage and current signal, but currently used region γ monitoring system can not realize the high-resolution spectral measurement of gamma-rays, tellurium zinc cadmium (CZT) detector is third generation semiconductor detector simultaneously, other types detector relatively, it is high that it has detection efficient, energy working and room temperature, the feature that angular response degree is good, but tellurium zinc cadmium CZT detector is not applied in the γ monitoring system of region, the maximum efficiency of performance tellurium zinc cadmium CZT detector.
Summary of the invention
In order to overcome the shortcoming of above-mentioned prior art, the object of the present invention is to provide a kind of detection efficient high, can working and room temperature, can realize the tellurium zinc cadmium CZT region gamma detector that gamma-rays high sensitivity and directionless difference are measured.
In order to achieve the above object, the technical scheme that the present invention takes is: a kind of tellurium zinc cadmium CZT region gamma detector, comprises that tellurium zinc cadmium CZT crystal detection, Charge sensitive amplifier circuit, SK master put shape amplifying circuit, single-channel pulse height analysis circuit, high-pressure modular circuit; Described tellurium zinc cadmium CZT crystal detection is connected electrically on Charge sensitive amplifier circuit, high-pressure modular circuit is electrically connected with Charge sensitive amplifier circuit, the input that the output of described Charge sensitive amplifier circuit is put shape amplifying circuit with SK master is connected, the output that described SK master is put shape amplifying circuit is electrically connected with the input of single-channel pulse height analysis circuit, the output output signal pulses of described single-channel pulse height analysis circuit.
Described tellurium zinc cadmium CZT crystal detection is by the tellurium zinc cadmium CZT material system of 10x10x10mm, and in the time of pressurization+800V, sensitivity is 100 ~ 300cps/ μ Sv/h.
Described Charge sensitive amplifier circuit adopts FET amplifier chip opa2211 and JFET FET composition capacitive feedback type amplifying circuit, and 2.5 times of amplifying circuits that late-class circuit is positive input, amplify to drive to signal and process.
Described SK master is put shape amplifying circuit the exponential damping type signal of Charge sensitive amplifier circuit output is amplified to 100 ~ 200 times, and exponential damping type signal is converted to symmetrical Gaussian pulse signal.
The Gaussian pulse signal that SK master is put the output of shape amplifying circuit by described single-channel pulse height analysis circuit carries out amplitude discriminator shaping, when input signal amplitude is greater than low threshold voltage 50 ~ 70mV, while being less than high threshold voltage 2.5 ~ 3.5V, the positive pulse signal that the final output pulse width of detector is 2us; In the time that input signal amplitude is greater than high threshold voltage 2.5 ~ 3.5V or is less than low threshold voltage 50 ~ 70mV, all signal output useless.
The CC255P-01Y type high-pressure modular that described high-pressure modular circuit adopts, stable output+800V high direct voltage.
The input that described SK master is put shape amplifying circuit adopts pole-zero cancellation circuit, exponential damping signal is carried out to differential processing, SK master is put the two-stage low-pass filter circuit on totally 4 rank in shape amplifying circuit, the signal after differential is carried out to integral filtering, and signal is amplified.
The present invention adopts above technical scheme, have the following advantages, in the present invention, tellurium zinc cadmium CZT crystal detection sends the signal detecting to Charge sensitive amplifier circuit, Charge sensitive amplifier circuit amplifies the signal receiving to drive to be processed, signal after Charge sensitive amplifier processing of circuit is exponential damping type signal, and send to SK master to put shape amplifying circuit this exponential damping type signal to amplify, SK master is put signal after shape amplifying circuit well is dealt into and is sent single-channel pulse height analysis circuit to and carry out amplitude discriminator shaping, the line output of relatively going forward side by side, this monitoring system detection efficient is high, energy working and room temperature, can realize the tellurium zinc cadmium CZT region gamma detector to the high-resolution spectral measurement of gamma-rays.
Brief description of the drawings
Fig. 1 is structural representation of the present invention;
Fig. 2 is the Charge sensitive amplifier circuit in the present invention;
Fig. 3 is that the SK master in the present invention is put shape amplifying circuit;
Fig. 4 is the single-channel pulse height analysis circuit in the present invention;
Fig. 5 is the high-pressure modular circuit in the present invention.
Detailed description of the invention
Below in conjunction with drawings and Examples, the present invention is described in detail.
Embodiment 1
As shown in Figure 1, there is shown, a kind of tellurium zinc cadmium CZT region gamma detector, comprises that tellurium zinc cadmium CZT crystal detection, Charge sensitive amplifier circuit, SK master put shape amplifying circuit, single-channel pulse height analysis circuit, high-pressure modular circuit; Described tellurium zinc cadmium CZT crystal detection is connected electrically on Charge sensitive amplifier circuit as shown in Figure 2, high-pressure modular circuit is electrically connected with Charge sensitive amplifier circuit, the input that the output of described Charge sensitive amplifier circuit is put shape amplifying circuit with SK master is connected, the output that described SK master is put shape amplifying circuit is electrically connected with the input of single-channel pulse height analysis circuit, the output output signal pulses of described single-channel pulse height analysis circuit.
In the process of work, the signal detecting is sent to Charge sensitive amplifier circuit as shown in Figure 2 by tellurium zinc cadmium CZT crystal detection, lotus sensitive amplifier circuit amplifies to drive to the signal of receiving to be processed, and drive signal after treatment to send to SK master as shown in Figure 3 to put shape amplifying circuit by amplifying, SK master is put shape amplifying circuit and the signal receiving is amplified and carried out differential processing, SK master is put shape amplifying circuit signal after treatment is sent to single-channel pulse height analysis circuit as described in Figure 4, single-channel pulse height analysis circuit carries out amplitude discriminator shaping to the received signal, the line output of relatively going forward side by side, this monitoring system detection efficient is high, energy working and room temperature, can realize the tellurium zinc cadmium CZT region gamma detector to the high-resolution spectral measurement of gamma-rays.
Embodiment 2
On the basis of embodiment 1, the tellurium zinc cadmium CZT crystal detection described in is by the tellurium zinc cadmium CZT material system of 10x10x10mm, and in the time of pressurization+800V, sensitivity is 100 ~ 300cps/ μ Sv/h; This tellurium zinc cadmium CZT crystal is in the time that power spectrum is tested, right241Am radial energy is less than 10% energy resolution;
Described Charge sensitive amplifier circuit adopts FET amplifier chip opa2211 and JFET FET composition capacitive feedback type amplifying circuit, and 2.5 times of amplifying circuits that late-class circuit is positive input, amplify to drive to signal and process. This Charge sensitive amplifier circuit output signal amplitude and ray energy are linear. Its sensitivity can reach 150mV/MeV, and Electronics noice is less than 160 electronics;
Described SK master is put shape amplifying circuit the exponential damping type signal of Charge sensitive amplifier circuit output is amplified to 100 ~ 200 times, and exponential damping type signal is converted to symmetrical Gaussian pulse signal.
The Gaussian pulse signal that SK master is put the output of shape amplifying circuit by described single-channel pulse height analysis circuit carries out amplitude discriminator shaping, when input signal amplitude is greater than low threshold voltage 50 ~ 70mV, while being less than high threshold voltage 2.5 ~ 3.5V, the positive pulse signal that the final output pulse width of detector is 2us; In the time that input signal amplitude is greater than high threshold voltage 2.5 ~ 3.5V or is less than low threshold voltage 50 ~ 70mV, all signal output useless. The object of this voltage is to utilize comparator circuit in circuit, to be less than the voltage noise of 50mV and to be rejected in signal higher than the radiation gamma-rays of 3MeV. .
Described high-pressure modular circuit as shown in Figure 5 adopts the CC255P-01Y type high-pressure modular of Beijing Hamamatsu Technology Co., Ltd., stable output+800V high direct voltage.
The input that described SK master is as shown in Figure 3 put shape amplifying circuit adopts pole-zero cancellation circuit, exponential damping signal is carried out to differential processing, SK master is put the two-stage low-pass filter circuit on totally 4 rank in shape amplifying circuit, the signal after differential is carried out to integral filtering, and signal is amplified.
Probe body adopts aluminium material oxidation processing, ensures good barrier propterty and effectiveness. Power interface adopts the aviation plug of 7 cores.
Advantage of the present invention: complete machine size is little, cylindrical, radius 65mm, long 150mm; High to gamma-ray detection efficiency, be greater than 100cps/ μ Sv/h; Detector internal high-voltage, user is easy to use;
In the process of work, tellurium zinc cadmium CZT crystal detection sends the signal collecting to Charge sensitive amplifier circuit, Charge sensitive amplifier circuit amplifies the signal receiving to drive to be processed, signal after Charge sensitive amplifier processing of circuit is exponential damping type signal, and this exponential damping type signal is sent to SK master put shape amplifying circuit, SK master is put shape amplifying circuit the exponential damping type signal of the Charge sensitive amplifier circuit output receiving is amplified to 100 ~ 200 times, and exponential damping type signal is converted to symmetrical Gaussian pulse signal, in the process of amplifying, the input that SK master is put shape amplifying circuit adopts pole-zero cancellation circuit, exponential damping signal is carried out to differential processing, SK master is put the two-stage low-pass filter circuit on totally 4 rank in shape amplifying circuit, signal after differential is carried out to integral filtering, and signal is amplified, SK master is put shape amplifying circuit and is sent gaussian signal after treatment to SK master put shape amplifying circuit output by single-channel pulse height analysis circuit Gaussian pulse signal and carry out amplitude discriminator shaping, when input signal amplitude is greater than low threshold voltage, while being less than high threshold voltage, the positive pulse signal that the final output pulse width of detector is 2us, in the time that input signal amplitude is greater than high threshold voltage or is less than low threshold voltage, all signal output useless, high-pressure modular circuit is mainly provides power supply, ensures the normal operation of each circuit, adopts 800V high direct voltage to make each circuit more stable.
More than exemplifying is only to illustrate of the present invention, does not form the restriction to protection scope of the present invention, within the every and same or analogous design of the present invention all belongs to protection scope of the present invention.
Claims (7)
1. a tellurium zinc cadmium CZT region gamma detector, is characterized in that, comprises that tellurium zinc cadmium CZT crystal detection, Charge sensitive amplifier circuit, SK master put shape amplifying circuit, single-channel pulse height analysis circuit, high-pressure modular circuit; Described tellurium zinc cadmium CZT crystal detection is connected electrically on Charge sensitive amplifier circuit, high-pressure modular circuit is electrically connected with Charge sensitive amplifier circuit, the input that the output of described Charge sensitive amplifier circuit is put shape amplifying circuit with SK master is connected, the output that described SK master is put shape amplifying circuit is electrically connected with the input of single-channel pulse height analysis circuit, the output output signal pulses of described single-channel pulse height analysis circuit.
2. a kind of tellurium zinc cadmium CZT according to claim 1 region gamma detector, is characterized in that, described tellurium zinc cadmium CZT crystal detection is by the tellurium zinc cadmium CZT material system of 10x10x10mm, and in the time of pressurization+800V, sensitivity is 100 ~ 300cps/ μ Sv/h.
3. a kind of tellurium zinc cadmium CZT according to claim 1 region gamma detector, it is characterized in that, described Charge sensitive amplifier circuit adopts FET amplifier chip opa2211 and JFET FET composition capacitive feedback type amplifying circuit, late-class circuit is 2.5 times of amplifying circuits of positive input, signal is amplified to drive and process.
4. a kind of tellurium zinc cadmium CZT according to claim 1 region gamma detector, it is characterized in that, described SK master is put shape amplifying circuit the exponential damping type signal of Charge sensitive amplifier circuit output is amplified to 100 ~ 200 times, and exponential damping type signal is converted to symmetrical Gaussian pulse signal.
5. a kind of tellurium zinc cadmium CZT according to claim 4 region gamma detector, it is characterized in that, the Gaussian pulse signal that SK master is put the output of shape amplifying circuit by described single-channel pulse height analysis circuit carries out amplitude discriminator shaping, when input signal amplitude is greater than low threshold voltage 50 ~ 70mV, while being less than high threshold voltage 2.5 ~ 3.5V, the positive pulse signal that the final output pulse width of detector is 2us; In the time that input signal amplitude is greater than high threshold voltage 2.5 ~ 3.5V or is less than low threshold voltage 50 ~ 70mV, all signal output useless;
The object of this voltage is to utilize comparator circuit in circuit, to be less than the voltage noise of 50mV and to be rejected in signal higher than the radiation gamma-rays of 3MeV.
6. a kind of tellurium zinc cadmium CZT according to claim 1 region gamma detector, is characterized in that, the CC255P-01Y type high-pressure modular that described high-pressure modular circuit adopts, stable output+800V high direct voltage.
7. a kind of tellurium zinc cadmium CZT according to claim 4 region gamma detector, it is characterized in that, the input that described SK master is put shape amplifying circuit adopts pole-zero cancellation circuit, exponential damping signal is carried out to differential processing, SK master is put the two-stage low-pass filter circuit on totally 4 rank in shape amplifying circuit, signal after differential is carried out to integral filtering, and signal is amplified.
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| CN201510980202.1A CN105589091B (en) | 2015-12-24 | 2015-12-24 | A kind of regions cadmium-zinc-teiluride CZT gamma detector |
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| CN201510980202.1A CN105589091B (en) | 2015-12-24 | 2015-12-24 | A kind of regions cadmium-zinc-teiluride CZT gamma detector |
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| CN105589091B CN105589091B (en) | 2018-07-31 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109917443A (en) * | 2019-03-12 | 2019-06-21 | 中国辐射防护研究院 | High energy gamma radiation detection device |
| CN110609050A (en) * | 2019-09-25 | 2019-12-24 | 成都理工大学 | Method and system for eliminating X-ray fluorescence spectrum peak tailing |
| CN111366966A (en) * | 2018-12-25 | 2020-07-03 | 中核核电运行管理有限公司 | Special equipment for teaching radiation monitoring instrument |
| WO2021121353A1 (en) * | 2019-12-18 | 2021-06-24 | 广州兰泰胜辐射防护科技有限公司 | Radiation detection probe and manufacturing method therefor, and radiation detection chip |
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| CN104635254A (en) * | 2015-01-30 | 2015-05-20 | 陕西迪泰克新材料有限公司 | Portable gamma spectroradiometer |
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| CN104635254A (en) * | 2015-01-30 | 2015-05-20 | 陕西迪泰克新材料有限公司 | Portable gamma spectroradiometer |
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| CN111366966A (en) * | 2018-12-25 | 2020-07-03 | 中核核电运行管理有限公司 | Special equipment for teaching radiation monitoring instrument |
| CN109917443A (en) * | 2019-03-12 | 2019-06-21 | 中国辐射防护研究院 | High energy gamma radiation detection device |
| CN110609050A (en) * | 2019-09-25 | 2019-12-24 | 成都理工大学 | Method and system for eliminating X-ray fluorescence spectrum peak tailing |
| WO2021121353A1 (en) * | 2019-12-18 | 2021-06-24 | 广州兰泰胜辐射防护科技有限公司 | Radiation detection probe and manufacturing method therefor, and radiation detection chip |
| US12072456B2 (en) | 2019-12-18 | 2024-08-27 | Ratection Co., Ltd. | Radiation detection probe and manufacturing method therefor, and radiation detection chip |
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Denomination of invention: Cadmium zinc telluride (CZT) area gamma detector Effective date of registration: 20190426 Granted publication date: 20180731 Pledgee: Shaanxi Weicheng Xianyang rural commercial bank Limited by Share Ltd Pledgor: IMDETEK CORPORATION LTD. Registration number: 2019610000079 |
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Date of cancellation: 20210517 Granted publication date: 20180731 Pledgee: Shaanxi Weicheng Xianyang rural commercial bank Limited by Share Ltd. Pledgor: IMDETEK Corp.,Ltd. Registration number: 2019610000079 |