CN202974453U - Bipolar-bias-voltage single photon detection device - Google Patents
Bipolar-bias-voltage single photon detection device Download PDFInfo
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- CN202974453U CN202974453U CN 201220625484 CN201220625484U CN202974453U CN 202974453 U CN202974453 U CN 202974453U CN 201220625484 CN201220625484 CN 201220625484 CN 201220625484 U CN201220625484 U CN 201220625484U CN 202974453 U CN202974453 U CN 202974453U
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Abstract
The utility model discloses a bipolar-bias-voltage single photon detection device. The bipolar-bias-voltage single photon detection device includes an avalanche photodiode circuit, a positive/negative bipolar bias voltage generating circuit, a bipolar gate pulse generating circuit, a first transmission line transformer circuit, a second transmission line transformer circuit, a differential operational amplifier, and a high-speed comparator circuit used for identifying avalanche. The object of the utility model is to decrease the influences of dark count and after-pulses and improve detection efficiency and work frequency of a single photon detector. The above object of the utility model is realized through the following manners that: bipolar gate pulses are adopted to cooperate with bipolar direct current bias voltage to excite an avalanche photodiode; and positive avalanche signals and negative avalanche signals are detected; positive/negative gate pulse bias voltage is equivalent to the single-pole bias voltage of the sum of two gate pulse absolute amplitude values which is applied on the APD; and therefore, the excitation of the single photon avalanche of the APD can be facilitated under lower direct current bias voltage and higher gate pulse amplitude. Thus, the influences of dark count and after-pulses can be reduced, and detection efficiency and work frequency of a single photon detector can be improved.
Description
[technical field]
The utility model relates to single photon sensitive detection technology, is specifically related to a kind of gate pulse of positive negative bipolar of utilizing and coordinates the positive negative bipolar bias voltage to realize the device that high-speed single photon is surveyed.
[background technology]
The single-photon detecting survey technology is one of many technology of hypersensitive optical signal detecting, has very widely in the subject such as physics, chemistry, biology and engineering application and uses.In recent years, along with the rise of quantum information science and the development of hypersensitive spectroscopy, the single-photon detector technology is being played the part of more and more important effect therein.
In the multiwave single-photon detecting survey technology of crowd, the near-infrared single photon Detection Techniques are because popularity and the importance of its application have caused more concern, especially in having the quantum secret communication system of significant application value, the near-infrared single photon detector of communication band has directly determined communication distance, one-tenth code check and the bit error rate of system as core devices; Near-infrared single photon detector is in laser ranging simultaneously, and sensitive infrared spectrum context of detection also has important application.Therefore the noise that how to improve frequency of operation, quantum efficiency, the reduction detector of single-photon detector becomes present stage numerous subjects and the heat subject in field.
In single photon detection, avalanche photodide APD is operated under so-called " door model ", in this pattern, the bias voltage of APD only can be higher than avalanche voltage within the very short time that might be arrived by photon, all will be lower than avalanche voltage at the other times bias voltage.Because APD only just can be in running order when might having photon to arrive, therefore lower at the gain coefficient of other times APD, the noise signal that produces is very low, also can not survey because noise signal causes APD to be in " death situation attitude " real photon the quantum efficiency of APD is descended.In quantum secret communication, because light path information is known, i.e. the time of photon arrival detector is also foreseeable, so the APD of " door model " has obtained using very widely in quantum secret communication system.
With respect to traditional passive inhibition and active suppression circuit, " door model " has significant advantage.In passive inhibition circuit, the release of avalanche current is completed by the resistance of connecting.Determined by the distributed capacitance of APD and the size of resistance in series the release time of APD, generally, the size of resistance in series makes release time longer all tens of kilohms of magnitudes, therefore, adopts the single photon detection speed of passive inhibition circuit lower.
And in the circuit of active suppression, utilize the rising edge of avalanche signal as trigger pip, and after a snowslide produces, make a response rapidly, form a potential pulse, the cathode voltage of APD is dragged down, make snowslide be inhibited in a short period of time.Due to the mode that has adopted rapid shutoff, active suppression circuit has overcome passive inhibition circuit long shortcoming release time, and the snowslide time is short, and the afterpulse probability is lower.But owing to there is no photon, APD still is in the Geiger pattern, makes that to calculate mentally number under active suppression circuit higher with respect to the gate pulse pattern of introducing later.Active suppression circuit is generally used for the single photon detection of continuous probe pattern.
Therefore, be necessary to solve as above problem.
[utility model content]
the utility model has overcome the deficiency of above-mentioned technology, a kind of single-photon detecting survey technology and APD stimulating module of high-speed and high-efficiency are provided, this module has been abandoned the avalanche mode of traditional unipolarity bias voltage, adopt the bipolarity gate pulse to coordinate the bipolarity Dc bias to encourage avalanche photodide, and positive and negative two parts avalanche signal is surveyed, the equivalence of positive and negative gate pulse bias voltage with add the one pole bias voltage of putting two gate pulse absolute amplitude sums on APD, the single-photon avalanche that is conducive to excitation APD under lower dc offset voltage and higher gated pulse amplitude, thereby lower the impact of calculating mentally number and afterpulse, improve the frequency of operation of detection efficiency and single-photon detector.
On the other hand, positive and negative gate pulse bias voltage adds and is placed in the capacitive noise that also is conducive to control easily the APD junction capacity on APD, adopt the impact of the sharp cutting edge of a knife or a sword noise of method elimination of capacitance balancing inhibition, can realize the high repetition frequency operation of single photon detection, and the bipolarity Dc bias is conducive to reduce the impact of the ripple of DC voltage, signal to noise ratio (S/N ratio) after raising single-photon avalanche electric current and sharp cutting edge of a knife or a sword squelch is particularly conducive to and improves the operating characteristic that high-speed single photon is surveyed.
And the relative time delay of controlling the bipolarity gate pulse by precision, the amplitude that also can regulate easily sharp cutting edge of a knife or a sword noise is conducive to further promote the rejection ratio of sharp cutting edge of a knife or a sword noise.Relatively low bipolarity gate pulse coordinates the bipolarity Dc bias, in the harshness requirement while of the ultrashort pulse door design that reduces the single photon coincidence counting, has also promoted the long-time stability under various different service conditions of single-photon detectors.
For achieving the above object, the utility model has adopted following technical proposal:
a kind of single photon detecting element of bipolarity bias voltage, include be used to the avalanche optoelectronic pipe circuit 1 of responding to the external utmost point low light level, described avalanche optoelectronic pipe circuit 1 two ends are parallel be used to the high bias positive negative bipolar bias generating circuit 2 of positive negative bipolar being provided and being used for providing the bipolarity gate pulse generating circuit 3 of bipolarity gate pulse, described avalanche optoelectronic pipe circuit 1 includes avalanche optoelectronic pipe D3 and the sample resistance R36 that is connected in series, described sample resistance R36 two ends are connected with the first line transformer circuit 41 that is parallel with for sampling isolation output, described avalanche optoelectronic pipe circuit 1 two ends are parallel with the second line transformer circuit 42 through the output of taking a sample again after the capacitive noise simulation, described the first line transformer circuit 41 output terminals are connected with the difference transport and placing device 5 that is used for noise cancellation respectively with the second line transformer circuit 42 output terminals, described difference transport and placing device 5 output terminals are connected with the high-speed comparator circuit 6 of differentiating for snowslide.
Described positive negative bipolar bias generating circuit 2 is for providing the outside controllable electric power of positive negative bipolar high pressure.
described bipolarity gate pulse generating circuit 3 includes the clock signal generator 30 that connects in turn, differentiating circuit 31, the high-speed comparator circuit 32 that is used for output positive negative bipolar pulse in specific compare threshold situation, be used for the narrowing circuit 33 that the width to the two-way pulse of output more afterwards compresses respectively, for the amplifier circuit 34 of pressing the amplitude of place afterpulse to amplify to two-way, and be used for the reference level clamper of the pulse clamping circuit 35 in the position at zero point, be carried in avalanche optoelectronic pipe circuit 1 two ends through the positive and negative two-way gate pulse after clamping circuit 35 clampers.
Described the first line transformer circuit 41 includes line transformer T2 and resistance R 37, described line transformer T2 armature winding is connected in parallel on resistance R 36 two ends, described resistance R 37 is connected in parallel on one end ground connection behind line transformer T2 secondary winding two ends, and the other end is connected with difference transport and placing device 5 one input ends.
Described the second line transformer circuit 42 includes tunable capacitor C19, resistance R 26, line transformer T1 and the resistance R 27 for noise simulation, after being connected in series, described tunable capacitor C19 and resistance R 26 be connected in parallel on avalanche optoelectronic pipe circuit 1 two ends, described line transformer T1 armature winding is connected in parallel on resistance R 26 two ends, described resistance R 24 is connected in parallel on one end ground connection behind line transformer T1 secondary winding two ends, and the other end is connected with difference transport and placing device 5 another input ends.
The model that described difference transport and placing device 5 adopts is AD8351.
Described high-speed comparator circuit 6 adopts high-speed comparator AD96685BR.
The beneficial effects of the utility model are:
1, utilize the gate pulse of positive negative bipolar to substitute traditional unipolarity gate pulse, the Dc bias that coordinates positive negative bipolar, be carried in avalanche photodide two ends, the requirement of reduction to gate pulse, the single-photon avalanche that is conducive to excitation APD under lower dc offset voltage and higher gated pulse amplitude improves the frequency of operation of detection efficiency and single-photon detector.
2, wash away the traditional simple gate pulse mode of replacement with the positive negative bipolar portal vein, it can equivalence be the absolute value stack that an amplitude is two door amplitudes that the bipolarity door is carried on the avalanche optoelectronic pipe, thereby can obtain easily the gate pulse of high-amplitude, and in the situation that can be lower at the substantially constant required direct current biasing of detection efficiency, this just can well suppress to calculate mentally digit rate and afterpulse probability, makes the performance of detector further improve.
3, relatively low bipolarity gate pulse coordinates the bipolarity Dc bias, is conducive to promote the long-time stability of single-photon detectors under various different service conditions.
4, by time-delay and relative width between positive and negative two pulses of fine adjustment, can be so that the gate pulse after equivalence has milder rising edge, thereby make the capacitive noise of APD response relatively reduce, reduce the difficulty of rear class noise-balancing circuit, improve counterbalance effect.
5, the bipolarity bias voltage drives avalanche photodide, be carried in simultaneously for the tunable capacitor of simulating APD capacitive characteristic with pulse, it is closely similar that the capacitive noise of its generation and APD produce, two signals enter differential operational amplifier simultaneously, the capacitive noise of APD just and the analogue noise of tunable capacitor generation cancel out each other, avalanche signal is just well revealed.
6, suppress via capacitance balancing, the repeated work frequency of single photon detection can be freely tuning.
7, utilize bipolarity gate pulse bias voltage control APD junction capacity noise, be conducive to promote the rejection ratio of sharp cutting edge of a knife or a sword noise.
[description of drawings]
Fig. 1 is the utility model system architecture schematic diagram.
Fig. 2 is that positive negative bipolar pulse equivalence of the present utility model is a gate pulse schematic diagram that amplitude is higher.
Fig. 3 is that positive negative pulse stuffing time-delay and width are regulated in the utility model optimization.
Fig. 4 is that the utility model bipolar pulse produces schematic diagram.
Fig. 5 is the utility model bipolarity gate pulse generating circuit circuit diagram.
Fig. 6 is that the utility model avalanche signal extracts circuit figure.
[embodiment]
Be described in further detail below in conjunction with accompanying drawing and embodiment of the present utility model:
as shown in Figure 1, a kind of single photon detecting element of bipolarity bias voltage, include be used to the avalanche optoelectronic pipe circuit 1 of responding to the external utmost point low light level, described avalanche optoelectronic pipe circuit 1 two ends are parallel be used to the high bias positive negative bipolar bias generating circuit 2 of positive negative bipolar being provided and being used for providing the bipolarity gate pulse generating circuit 3 of bipolarity gate pulse, described avalanche optoelectronic pipe circuit 1 includes avalanche optoelectronic pipe D3 and the sample resistance R36 that is connected in series, described sample resistance R36 two ends are connected with the first line transformer circuit 41 that is parallel with for sampling isolation output, described avalanche optoelectronic pipe circuit 1 two ends are parallel with the second line transformer circuit 42 through the output of taking a sample again after the capacitive noise simulation, described the first line transformer circuit 41 output terminals are connected with the difference transport and placing device 5 that is used for noise cancellation respectively with the second line transformer circuit 42 output terminals, described difference transport and placing device 5 output terminals are connected with the high-speed comparator circuit 6 of differentiating for snowslide.
Positive negative bipolar bias generating circuit 2 described in the utility model is for providing the outside controllable electric power of positive negative bipolar high pressure.
As shown in Figure 2, core concept of the present utility model is exactly to wash away with the positive negative bipolar portal vein to replace traditional simple gate pulse mode, it can equivalence be the absolute value stack that an amplitude is two door amplitudes that the bipolarity door is carried on the avalanche optoelectronic pipe, thereby can obtain easily the gate pulse of high-amplitude, in the situation that the substantially constant required direct current biasing of detection efficiency can be lower, this just can well suppress to calculate mentally digit rate and afterpulse probability, makes the performance of detector further improve.
As shown in Figure 3, by time-delay and the relative width between positive and negative two pulses of fine adjustment, can be so that the gate pulse after equivalence have milder rising edge, thus make the capacitive noise of APD response relatively reduce, reduce the difficulty of rear class noise-balancing circuit, improve counterbalance effect.
Be illustrated in figure 4 as bipolar pulse and produce schematic diagram, bipolarity gate pulse generating circuit 3 includes clock signal generator 30, the differentiating circuit 31, the high-speed comparator circuit 32 that is used for output positive negative bipolar pulse in specific compare threshold situation that connect in turn, be used for narrowing circuit 33 that the width to the two-way pulse of output more afterwards compresses, be used for two-way is pressed the amplifier circuit 34 that the amplitude of place afterpulse amplifies and is used for the reference level clamper of the pulse clamping circuit 35 in the position at zero point.
Bipolarity gate pulse generating circuit circuit diagram as Fig. 5, wherein, the clock signal of clock signal generator 30 forms by the differentiating circuit 31 that C2 and R10 form the normal phase input end that differential signal enters high-speed comparator AD96685BR again, the accurate voltage that its inverting input is provided by the outside is threshold value as a comparison, can be obtained by electric resistance partial pressure, also can be provided by voltage source, the pulse width of comparer output is exactly to be determined by compare threshold.Comparer have two-phase output Q and
, being opposite pulse symmetry, positive and negative, they are respectively by two identical narrowing circuits, wherein a routing resistance R2, R3, R4, R5, fixed capacity C1 and tunable capacitor C9 form, another routing resistance R12, R13, R15, R16, and fixed capacity C5 and tunable capacitor C10 form.Two-way pulse after compression improves its amplitude by amplifying circuit respectively again, and wherein a route broad band amplifier AD8009 and resistance R 1, R6, R7 form, and another route another broad band amplifier AD8009 and resistance R 9, R17, R18 form.Final output A, B two-way burst pulse.
Then, A, the clamping circuit 35 of B two-way bipolarity gate pulse through being comprised of schottky diode D1, D2 and capacitor C 8, C6 clamp down on its reference level in the position at zero point.
Be illustrated in figure 6 as the utility model avalanche signal and extract circuit figure, VCC and VEE are the positive negative bipolar high pressure that is provided by the outside, and they converge by current-limiting resistance R21 and R41 and two gate pulses respectively, jointly are carried in avalanche photodide APD two ends.
R36 is sample resistance, be used for changing the avalanche current that APD produces into voltage, described the first line transformer circuit 41 includes line transformer T2 and resistance R 37, described line transformer T2 armature winding is connected in parallel on resistance R 36 two ends, described resistance R 37 is connected in parallel on one end ground connection behind line transformer T2 secondary winding two ends, the other end is connected with difference transport and placing device 5 one input ends, transfers signals to difference transport and placing device 5.
Described the second line transformer circuit 42 includes tunable capacitor C19, resistance R 26, line transformer T1 and the resistance R 27 for noise simulation, after being connected in series, described tunable capacitor C19 and resistance R 26 be connected in parallel on avalanche optoelectronic pipe circuit 1 two ends, described line transformer T1 armature winding is connected in parallel on resistance R 26 two ends, described resistance R 24 is connected in parallel on one end ground connection behind line transformer T1 secondary winding two ends, and the other end is connected with difference transport and placing device 5 another input ends.
As mentioned above, bipolarity high pressure and pulse also are carried in the tunable capacitor C19 for simulation APD capacitive characteristic simultaneously, and it is closely similar that the capacitive noise of its generation and APD produce, and two signals enter differential operational amplifier AD8351 simultaneously.
So, the capacitive noise of APD just and the analogue noise of tunable capacitor C19 generation cancel out each other, avalanche signal is just well revealed, and the avalanche signal that is being mingled with a small amount of noise is differentiated by high-speed comparator AD96685, thereby obtained efficient single photon counting.
as mentioned above, what the utility model was protected is a kind of single-photon detecting survey technology and APD stimulating module of high-speed and high-efficiency, this module has been abandoned the avalanche mode of traditional unipolarity bias voltage, adopt the bipolarity gate pulse to coordinate the bipolarity Dc bias to encourage avalanche photodide, and positive and negative two parts avalanche signal is surveyed, the equivalence of positive and negative gate pulse bias voltage with add the one pole bias voltage of putting two gate pulse absolute amplitude sums on APD, the single-photon avalanche that is conducive to excitation APD under lower dc offset voltage and higher gated pulse amplitude, thereby lower the impact of calculating mentally number and afterpulse, improve the frequency of operation of detection efficiency and single-photon detector.All are identical with the utility model structure and be that the technical scheme of the equivalents of the utility model physical circuit is all thought and fallen in protection domain of the present utility model.
Claims (7)
1. the single photon detecting element of a bipolarity bias voltage, it is characterized in that including the avalanche optoelectronic pipe circuit (1) be used to responding to the external utmost point low light level, described avalanche optoelectronic pipe circuit (1) two ends are parallel be used to the high bias positive negative bipolar bias generating circuit of positive negative bipolar (2) being provided and being used for providing the bipolarity gate pulse generating circuit (3) of bipolarity gate pulse, described avalanche optoelectronic pipe circuit (1) includes avalanche optoelectronic pipe D3 and the sample resistance R36 that is connected in series, described sample resistance R36 two ends are connected with the first line transformer circuit (41) that is parallel with for sampling isolation output, described avalanche optoelectronic pipe circuit (1) two ends are parallel with the second line transformer circuit (42) through the output of taking a sample again after the capacitive noise simulation, described the first line transformer circuit (41) output terminal is connected with the difference transport and placing device (5) that is used for noise cancellation respectively with the second line transformer circuit (42) output terminal, described difference transport and placing device (5) output terminal is connected with the high-speed comparator circuit (6) of differentiating for snowslide.
2. the single photon detecting element of a kind of bipolarity bias voltage according to claim 1, is characterized in that described positive negative bipolar bias generating circuit (2) is for providing the outside controllable electric power of positive negative bipolar high pressure.
3. the single photon detecting element of a kind of bipolarity bias voltage according to claim 1, it is characterized in that described bipolarity gate pulse generating circuit (3) includes the clock signal generator (30) that connects in turn, differentiating circuit (31), the high-speed comparator circuit (32) that is used for output positive negative bipolar pulse in specific compare threshold situation, be used for the narrowing circuit (33) that the width to the two-way pulse of output more afterwards compresses respectively, for the amplifier circuit (34) of pressing the amplitude of place afterpulse to amplify to two-way, and be used for the reference level clamper of the pulse clamping circuit (35) in the position at zero point, be carried in avalanche optoelectronic pipe circuit (1) two ends through the positive and negative two-way gate pulse after clamping circuit (35) clamper.
4. the single photon detecting element of a kind of bipolarity bias voltage according to claim 1, it is characterized in that described the first line transformer circuit (41) includes line transformer T2 and resistance R 37, described line transformer T2 armature winding is connected in parallel on resistance R 36 two ends, described resistance R 37 is connected in parallel on one end ground connection behind line transformer T2 secondary winding two ends, and the other end is connected with difference transport and placing device (5) one input ends.
5. the single photon detecting element of a kind of bipolarity bias voltage according to claim 1, it is characterized in that described the second line transformer circuit (42) includes the tunable capacitor C19 for noise simulation, resistance R 26, line transformer T1, and resistance R 27, after being connected in series, described tunable capacitor C19 and resistance R 26 be connected in parallel on avalanche optoelectronic pipe circuit (1) two ends, described line transformer T1 armature winding is connected in parallel on resistance R 26 two ends, described resistance R 24 is connected in parallel on one end ground connection behind line transformer T1 secondary winding two ends, the other end is connected with another input end of difference transport and placing device (5).
6. the single photon detecting element of a kind of bipolarity bias voltage according to claim 1, is characterized in that the model that described difference transport and placing device (5) adopts is AD8351.
7. the single photon detecting element of a kind of bipolarity bias voltage according to claim 1, is characterized in that described high-speed comparator circuit (6) adopts high-speed comparator AD96685BR.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220625484 CN202974453U (en) | 2012-11-22 | 2012-11-22 | Bipolar-bias-voltage single photon detection device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201220625484 CN202974453U (en) | 2012-11-22 | 2012-11-22 | Bipolar-bias-voltage single photon detection device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102998007A (en) * | 2012-11-22 | 2013-03-27 | 广东汉唐量子光电科技有限公司 | Bipolar bias avalanche photo diode (APD) single photon detection system |
| CN106840419A (en) * | 2017-01-23 | 2017-06-13 | 上海朗研光电科技有限公司 | The method for reducing near-infrared single photon detector afterpulse probability |
| CN108896979A (en) * | 2018-07-13 | 2018-11-27 | 中山大学 | A kind of the pulse lidar reception circuit and system of ultra-wide injection measurement range |
| CN111294013A (en) * | 2018-12-06 | 2020-06-16 | 深圳美祥生物医疗科技有限公司 | Circuit and method for improving signal-to-noise ratio of pulse signal |
| CN112393810A (en) * | 2019-08-16 | 2021-02-23 | 华为技术有限公司 | Single photon detection device and method |
-
2012
- 2012-11-22 CN CN 201220625484 patent/CN202974453U/en not_active Withdrawn - After Issue
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102998007A (en) * | 2012-11-22 | 2013-03-27 | 广东汉唐量子光电科技有限公司 | Bipolar bias avalanche photo diode (APD) single photon detection system |
| CN102998007B (en) * | 2012-11-22 | 2014-08-20 | 广东汉唐量子光电科技有限公司 | Bipolar bias avalanche photo diode (APD) single photon detection system |
| CN106840419A (en) * | 2017-01-23 | 2017-06-13 | 上海朗研光电科技有限公司 | The method for reducing near-infrared single photon detector afterpulse probability |
| CN108896979A (en) * | 2018-07-13 | 2018-11-27 | 中山大学 | A kind of the pulse lidar reception circuit and system of ultra-wide injection measurement range |
| CN108896979B (en) * | 2018-07-13 | 2021-09-21 | 中山大学 | Pulse laser radar receiving circuit and system with ultra-wide single-shot measurement range |
| CN111294013A (en) * | 2018-12-06 | 2020-06-16 | 深圳美祥生物医疗科技有限公司 | Circuit and method for improving signal-to-noise ratio of pulse signal |
| CN111294013B (en) * | 2018-12-06 | 2023-11-03 | 深圳美祥生物医疗科技有限公司 | Circuit and method for improving signal-to-noise ratio of pulse signal |
| CN112393810A (en) * | 2019-08-16 | 2021-02-23 | 华为技术有限公司 | Single photon detection device and method |
| CN112393810B (en) * | 2019-08-16 | 2022-02-18 | 华为技术有限公司 | Single photon detection device and method |
| US11686616B2 (en) | 2019-08-16 | 2023-06-27 | Huawei Technologies Co., Ltd. | Single-photon detection apparatus and method comprising a phase-reversed reflection branch and a phase-unreversed reflection branch |
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| AV01 | Patent right actively abandoned |
Granted publication date: 20130605 Effective date of abandoning: 20140820 |
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| RGAV | Abandon patent right to avoid regrant |