CN202934861U - Metal ceramic composite board and circuit board - Google Patents
Metal ceramic composite board and circuit board Download PDFInfo
- Publication number
- CN202934861U CN202934861U CN201220447378.2U CN201220447378U CN202934861U CN 202934861 U CN202934861 U CN 202934861U CN 201220447378 U CN201220447378 U CN 201220447378U CN 202934861 U CN202934861 U CN 202934861U
- Authority
- CN
- China
- Prior art keywords
- transition metal
- thin plate
- composite plate
- metal thin
- metal substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Landscapes
- Ceramic Products (AREA)
- Laminated Bodies (AREA)
Abstract
The utility model discloses a metal ceramic composite board which comprises a metal substrate and a transition layer metal sheet, wherein the transition layer metal sheet can be converted to a ceramic layer after micro-arc oxidation, and is composited on the metal substrate by an explosion welding technology. The utility model further discloses a corresponding circuit board. The metal ceramic composite board and the circuit board are not sensitive to heat shock, and are better in heat shock resistance.
Description
Technical field
The utility model relates to the electronic devices and components fields, is specifically related to cermet composite plate and circuit board.
Background technology
The method that adopts when making the cermet composite plate generally comprises metallic matrix ceramic soldering layer, metallic matrix Thermal Sprayed Ceramic and metallic matrix differential arc oxidation and forms several major ways such as ceramic layer.
Form the mode of ceramic layer for the metallic matrix differential arc oxidation, can also can be obtained arc differential oxide ceramic layer in order to make by the metal the metal of differential arc oxidation except minorities such as aluminium, magnesium, titaniums, can be first on metallic matrix preparation can be converted into pottery transition metal layer, then transition metal layer is converted into pottery through differential arc oxidation.
At present the preparation method of domestic known transition metal layer has, for example number of patent application is the coating process of the patent exposure of CN200410102838.8, and it plates at the pretreated matrix surface of process and adopts hot dipping method or vacuum vapour deposition to prepare the aluminium lamination that one deck has suitable thickness.For example number of patent application is the molten soldering welding method of the patent exposure of CN200910304859.0, and it passes through the aluminium base overlay cladding of method built-up welding one deck of molten soldering in the metal surface.But the transition metal layer that these techniques are made and metallic matrix in conjunction with insecure, responsive to thermal shock, heat-resistant impact ability a little less than, and at transition metal after differential arc oxidation changes into pottery, compactness is not high, and this cermet composite plate of making does not have to be applied to circuit board yet.
The utility model content
For the problems referred to above, the purpose of this utility model is to provide a kind of transition metal thin plate and metal substrate strong bonded to become whole composite plate, whole rear composite plate is insensitive to thermal shock being combined into, heat-resistant impact ability is stronger, at the transition metal thin plate after differential arc oxidation changes into pottery, the compactness of cermet composite plate is high, and proof voltage intensity is good, can be applied to circuit board.
For achieving the above object, the utility model adopts following technical scheme:
A kind of cermet composite plate comprises metal substrate and through being converted into the transition metal thin plate of ceramic layer after differential arc oxidation, described transition metal thin plate adopts explosive welding (EW) technique to be compounded on metal substrate.
Preferably, aluminium sheet, magnesium sheet or titanium sheet metal that described transition metal thin plate is 0.2mm-0.4mm, described metal substrate are the copper coin of 0.3mm-0.8mm.
A kind of circuit board comprises above-mentioned cermet composite plate, also is included in the layer of copper layer that the ceramic layer surface plates by vacuum sputtering and galvanoplastic successively.
The beneficial effects of the utility model are:
At the transition metal thin plate with after the metal substrate strong bonded becomes integral body, the composite plate heat-resistant impact ability is strong, and at the transition metal thin plate after differential arc oxidation changes into pottery, the compactness of cermet composite plate is high, proof voltage intensity is good, can be applied to circuit board.
Description of drawings
Fig. 1 is the structural representation of cermet composite plate of the present utility model;
Fig. 2 is the manufacturing flow chart of cermet composite plate of the present utility model;
Fig. 3 is the structural representation that utilizes the circuit board of cermet composite plate manufacturing of the present utility model;
Fig. 4 is for to make transition metal thin plate and metal substrate carry out the schematic diagram of combination in metallurgical mode by explosive welding (EW) technique.
The specific embodiment
Below, by reference to the accompanying drawings and the specific embodiment, the utility model is described further:
As shown in Figure 1, be the structural representation of cermet composite plate of the present utility model.This cermet composite plate 100 comprises metal substrate 10 and transition metal thin plate 20, and wherein, described transition metal thin plate 20 can be converted into pottery after peroxidating, and described transition metal thin plate 20 adopts explosive welding (EW) technique to be compounded on metal substrate 10.Described transition metal thin plate 20 can be the material that aluminium sheet, magnesium sheet or titanium sheet metal etc. can be oxidized to pottery, and described metal substrate is copper coin.Preferably.It is 0.2mm-0.4mm that transition metal thin plate 20 is chosen thickness, and it is 0.3mm-0.8mm that described metal substrate 10 is chosen thickness.
As shown in Figure 2, be the manufacturing flow chart of cermet composite plate of the present utility model.The manufacture method of described cermet composite plate 100 comprises step:
S201: transition metal thin plate 20 is covered on metal substrate 10, and wherein, described transition metal thin plate 20 can be converted into pottery after peroxidating;
S202: adopt explosive welding (EW) technique to carry out Combined Processing to the metal substrate 10 that covers transition metal thin plate 20, composite plate in the middle of forming, by the middle composite plate that said method is made, the combination between its transition metal thin plate 20 and metal substrate 10 is firm, and very strong heat-resistant impact ability is arranged.
Through above-mentioned explosive welding (EW) technique to cross layer sheet metal 20 and metal substrate 10 carry out compound after, the combination that its composite performance is compared coating process and molten soldering welding method is significantly improved, performance comparison such as following table.
S203: adopt micro-arc oxidation process to process middle composite plate, make transition metal thin plate 20 partly or entirely be converted into pottery, form ceramic layer, produce cermet composite plate 100.Cermet composite plate by the said method manufacturing has the excellent comprehensive capacity of heat transmission, and the dielectric strength of ceramic layer on surface is high, because the thermal coefficient of expansion (CTE) of ceramic layer is close with the semiconductor chip thermal coefficient of expansion, bend resistance excellent performance when making the cermet composite plate originally be made into circuit board.
After producing cermet composite plate 100 according to above-mentioned manufacture method, plating layer of copper layer 30(thickness on the ceramic layer surface by vacuum sputtering can set as required, as 1-2 μ m), and by galvanoplastic, copper layer 30 is plated thick (as thick in 36 μ m-120 μ m in plating), can make circuit board 200(as shown in Figure 3).
in the present embodiment, after step S203, further, the cermet composite plate 100 that forms is placed in the weaker zone that grinding machine polishes to remove the ceramic layer surface, removing the position coating nano ceramic slurry of described weaker zone after cleaning, drying, the cermet composite plate of described coating nano ceramic slurry is placed in carries out application of vacuum in vacuum equipment (vacuum treated effect is to extract air below ceramic layer, allow the slurry that also is in mecystasis better be penetrated into inside ceramic layer, thereby make the compactness better), and carry out sintering and surface finish after application of vacuum, form the stronger cermet composite plate 100 of compactness.Preferably, described nano ceramics slurry is nano oxidized aluminum slurry, and content is 75% aluminium oxide and 25% deionized water.The described temperature low temperature ordinary sinter 2 hours that adopts 800-900 that is sintered to, then naturally cooling.The cermet composite plate 100 that described compactness is stronger can be used for making the more excellent circuit board of performance.Relatively by PVD, CVD or sol-gel-dip etc., the performance that the rete after differential arc oxidation carries out the sealing of hole processing is compared in prior art, the above-mentioned technique heat resistance of improving the compactness of rete after differential arc oxidation has had very big lifting, and its contrast properties is as shown in the table.
as shown in Figure 4, in described explosive welding (EW) treatment step S202, described metal substrate 10 is placed on the thick anvil block 30 of safety device (not shown) away from the one side of described transition metal thin plate 20, described transition metal thin plate 20 is away from the cushion 40 of the control energy of the one side conflict safety device of described metal substrate 10, when being covered on described metal substrate 10, described transition metal thin plate 20 forms the angle theta of 5 degree-30 degree between two plates, apply explosive 50 rear enclosed safety device and ignition charges by production engineering specifications on cushion 40, under the shock wave of explosive charge pressure, described transition metal thin plate 20 and described metal substrate 10 carry out combination in metallurgical mode and form middle composite plate.Wherein, shock wave up to millions of MPa pressure makes transition metal thin plate 20 hit metal substrate 10, two plate contact-making surfaces produce Plastic Flow and high-speed jet, the oxide-film of faying face ejects under the high-speed jet effect, through the saturated impact of moment high-energy, transition metal thin plate 20 and metal substrate 10 are with metallurgical mode combination.
In described micro-arc oxidation process treatment step S203, the metal substrate 10 of middle composite plate is fixed on the anode of micro-arc oxidation device away from the one side of transition metal thin plate 20, metal substrate 10 is done insulation towards the one side of transition metal thin plate 20 process, make transition metal thin plate 10 partly or entirely be converted into pottery the micro-arc oxidation device energising.Particularly, after micro-arc oxidation device energising, transition metal thin plate 10 is at the oxide-film of the oxidized generation insulation of the effect lower surface of electrolyte and electric current, oxide-film covering transition metal thin plate 10 surfaces; Along with the dielectric oxide film weak part of the former generation of rising of voltage is breakdown, generate thicker dielectric oxide film, until voltage is elevated to arcing voltage.After entering the arc discharge stage, former oxide-film weak location punctures the generation arc discharge and forms plasma, produce instantaneous HTHP effect (instantaneous temperature can reach 8000 ° of C) during arc discharge, under the acting in conjunction of heat chemistry, electrochemistry and plasma chemical, arc discharge strengthens and activates the reaction that occurs and with the oxide-film sintering, make transition metal thin plate 10 Surface Creation hard ceramic layers on anode.Ceramic coating formed by micro-arc oxidation reaches along with arc light spark growth the thickness that voltage is set at last until thicken comprehensively, transition metal thin plate 10 areas even all are converted into pottery more than 98%.In embodiment preferably, metal substrate 10 is done more than the withstand voltage that makes insulation when insulation is processed reaches 1000V towards the one side of transition metal thin plate 20.
A kind of preparation method of circuit board, after producing the cermet composite plate according to above-mentioned manufacture method, because the cermet composite plate that produces simultaneously is metal substrate, another side is ceramic layer, and when described metal substrate was copper coin, described cermet composite plate itself namely can be used as a circuit board and uses.
Preferably, the preparation method of another kind of circuit board, after producing the cermet composite plate according to above-mentioned manufacture method, plate layer of copper layer (as 1-2 μ m) on the ceramic layer surface by vacuum sputtering, and general galvanoplastic are copper layer plating thick (as thick in 36 μ m-120 μ m in plating), thereby make circuit board.
For a person skilled in the art, can make other various corresponding changes and distortion according to technical scheme described above and design, and these all changes and the distortion all should belong to the protection domain of the utility model claim within.
Claims (3)
1. a cermet composite plate, is characterized in that, comprises metal substrate and through being converted into the transition metal thin plate of ceramic layer after differential arc oxidation, described transition metal thin plate adopts explosive welding (EW) technique to be compounded on metal substrate.
2. cermet composite plate as claimed in claim 1, is characterized in that, the aluminium sheet that described transition metal thin plate is 0.2mm-0.4mm or magnesium sheet or titanium sheet metal, described metal substrate are the copper coin of 0.3mm-0.8mm.
?
3. a circuit board, is characterized in that, comprises cermet composite plate claimed in claim 1, also is included in the layer of copper layer that the ceramic layer surface plates by vacuum sputtering and galvanoplastic successively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220447378.2U CN202934861U (en) | 2012-09-04 | 2012-09-04 | Metal ceramic composite board and circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220447378.2U CN202934861U (en) | 2012-09-04 | 2012-09-04 | Metal ceramic composite board and circuit board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202934861U true CN202934861U (en) | 2013-05-15 |
Family
ID=48319120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201220447378.2U Expired - Lifetime CN202934861U (en) | 2012-09-04 | 2012-09-04 | Metal ceramic composite board and circuit board |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202934861U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108257923A (en) * | 2016-12-29 | 2018-07-06 | 比亚迪股份有限公司 | A kind of heat-radiating substrate and its preparation method and application and electronic component |
| CN108257922A (en) * | 2016-12-29 | 2018-07-06 | 比亚迪股份有限公司 | A kind of heat-radiating substrate and its preparation method and application and electronic component |
-
2012
- 2012-09-04 CN CN201220447378.2U patent/CN202934861U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108257923A (en) * | 2016-12-29 | 2018-07-06 | 比亚迪股份有限公司 | A kind of heat-radiating substrate and its preparation method and application and electronic component |
| CN108257922A (en) * | 2016-12-29 | 2018-07-06 | 比亚迪股份有限公司 | A kind of heat-radiating substrate and its preparation method and application and electronic component |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102825378A (en) | Manufacturing method of metal ceramic composite plate and preparation method of circuit board | |
| CN100496188C (en) | Aluminum-base printing circuit board and its production | |
| CN102473935B (en) | Titanium material for solid polymer fuel cell separator, and process for production thereof | |
| CN101027737B (en) | Electrode material and method for producing same | |
| CN109354512B (en) | Preparation method for chemical copper plating on surface of high-thermal-conductivity silicon nitride ceramic | |
| CN104362099A (en) | Manufacturing method of high-heat-conductivity copper-clad ceramic substrate | |
| US20190189548A1 (en) | Power module substrate | |
| CN105330340A (en) | Aluminum oxide ceramic metallization method used for brazing | |
| CN104213009A (en) | Method for cladding copper on surface of infiltration sintered tungsten-copper composite material | |
| KR20180030150A (en) | A substrate for an electric circuit and a method for producing a substrate of the above type | |
| CN105152689A (en) | Manufacturing method for ceramic-based copper-clad plate | |
| US20090047505A1 (en) | Aluminum alloy shell and manufacturing method making the same | |
| CN106958009A (en) | A kind of aluminium nitride ceramics copper-clad plate and preparation method thereof | |
| CN109133966B (en) | Preparation method of layered gradient graphite film/aluminum composite material | |
| EP1804558A1 (en) | Capacitor layer-forming material and printed circuit board having internal capacitor circuit obtained by using capacitor layer-forming material | |
| CN102714098A (en) | Electrode material for aluminum electrolytic capacitor and production method therefor | |
| CN102864479A (en) | Low-energy method for preparing high-insulativity anodised aluminium film by using two-step method | |
| CN103911634A (en) | Surface nickel plating method for molybdenum-based composite material | |
| CN202934861U (en) | Metal ceramic composite board and circuit board | |
| CN106978586A (en) | A kind of overlay coating processing method of arc-chutes copper tungsten electrical contact material | |
| CN105448466A (en) | Metallized iron powder core and preparation method thereof | |
| CN111069611A (en) | Preparation method of graphite-graphene-metal composite material | |
| CN102943225A (en) | Carbon fiber cloth/aluminium alloy composite material and preparation method thereof | |
| CN110721999B (en) | Copper-aluminum composite plate strip added with nickel grid layer and continuous production method thereof | |
| CN106757275A (en) | Low temperature glass process for sealing after a kind of titanium alloy electrochemical oxidation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Baoan District Fuyong Town, Shenzhen city of Guangdong province and 518000 new HUAFA Industrial Park building A5 Patentee after: SHENZHEN KERUI HIGH-TECH MATERIALS CO.,LTD. Address before: Baoan District Fuyong Town, Shenzhen city of Guangdong province and 518000 new HUAFA Industrial Park building A5 Patentee before: SHENZHEN KERUI ELECTRONIC ENTERPRISE CO.,LTD. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130515 |
|
| CX01 | Expiry of patent term |