CN106978586A - A kind of overlay coating processing method of arc-chutes copper tungsten electrical contact material - Google Patents

A kind of overlay coating processing method of arc-chutes copper tungsten electrical contact material Download PDF

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CN106978586A
CN106978586A CN201710213877.2A CN201710213877A CN106978586A CN 106978586 A CN106978586 A CN 106978586A CN 201710213877 A CN201710213877 A CN 201710213877A CN 106978586 A CN106978586 A CN 106978586A
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copper
tungsten
target
contact material
arc
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CN106978586B (en
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宋忠孝
薛佳伟
杨波
高磊雯
赖旭
李雁淮
马飞
马大衍
陈凯
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Xian Jiaotong University
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Xian Jiaotong University
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/16Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C27/00Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/04Alloys based on tungsten or molybdenum
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02Pretreatment of the material to be coated
    • C23C14/024Deposition of sublayers, e.g. to promote adhesion of the coating
    • C23C14/025Metallic sublayers
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5806Thermal treatment

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  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention discloses a kind of overlay coating processing method of arc-chutes with copper tungsten electrical contact material, including copper-tungsten contact material is prepared as base material;Mechanical polishing, cleaning, drying;It is put into vacuum cavity under an argon atmosphere using chromium target, nickel target or titanium target in substrate deposit layers of chrome, nickel dam or titanium layer;Have using copper target, tungsten target in deposition and continue to be co-deposited copper tungsten coating in the substrate of layers of chrome, nickel dam or titanium layer film layer, obtain the copper tungsten tungsten coating with certain thickness;Annealed in the mixed atmosphere protection of inert gas and hydrogen, furnace cooling takes out sample, produces copper tungsten electrical contact material overlay coating.The equally distributed structure of this two-phase level can greatly improve ablation uniformity and reduction rhegmalypt depth, improve service life;The nanocrystalline W skeleton having simultaneously can improve arc ablation resistance ability.The simple operations of this method equipment are convenient, and effect is obvious, with good industrial applications prospect.

Description

A kind of overlay coating processing method of arc-chutes copper tungsten electrical contact material
Technical field
The present invention relates to a kind of overlay coating processing method of arc-chutes with copper tungsten electrical contact material, magnetron sputtering point is used X prime coats and copper tungsten coating are not deposited in copper tungsten electrical contact material substrate surface, coating is well combined with substrate, with nanoscale Two phase sizes, and contact surface roughness can be reduced, the arc erosion for significantly improving arc-chutes electrical contact material is uniform Property, the resistance to electric arc life-span is improved, belongs to material surface processing and technical field of modification.
Background technology
Arc-chutes are the core components of mesohigh power switch, and its main function is during the excellent insulating properties of arc-extinguishing medium makes High-tension circuit rapidly blow-out and can suppress electric current after cutting off the electricity supply, so as to avoid accident and unexpected generation.Copper tungsten electrical contact Material is the core material of all kinds of high-voltage switch arc-chutes, because it combines " sweating " phenomenon of copper under arc erosion effect To absorb arc energy, reduce arc temperature, and the higher fusing point of W skeleton, the ability of high temperature competency and resistance to arc erosion and It is widely used in various arc-extinguishing chamber of circuit breaker.Arc-chutes are vacuum or protection due to its complicated in mechanical structure, dielectric Gas, security requirement is higher, therefore cost is costly and the set time must change guarantee power grid security in time.This is due to Wherein contact material can be directly facing arc erosion, and compared to the miscellaneous part of arc-chutes, it is lost tight after certain active time Weight, the position often failed earliest, in turn results in scrapping for whole arc-chutes, causes significant wastage.Therefore its contact is improved Arc erosion uniformity, arc stability and the resistance to arc stiffness of material surface are extremely closed to the service life and reliability of arc-chutes It is important.With China " west-to-east power transmission " implementation, high pressure, the Large scale construction of UHV transmission network, and with electricity The expansion of Force system scale and the development of electricity market, the reliability and stability to arc-extinguishing chamber of circuit breaker it is also proposed increasingly Harsh requirement, in addition to developing more preferable arc-chutes mechanical structure, dielectric and magnetic quenching structure, needs lifting badly and goes out The combination property of the core of arc chamber --- copper tungsten contact material:There is good arc erosion uniformity, stability and high The resistance to electric arc life-span.
And arc-chutes are concentrated mainly on field of powder metallurgy with the preparation method of copper-tungsten at present, copper powder, tungsten powder are used And other additives are directly sintered shaping after mixed powder by different sintering methods, such as hot pressed sintering, cold (heat) is quiet Pressure sintering, pulsed plasma electric spark sintering;Infiltration method is most commonly used that in industrial production, infiltration method technique is relatively easy, And of a relatively high consistency can be obtained.Arc-chutes copper tungsten contact material prepared by above powder metallurgy process has two Individual problem:1. powder quality, particle diameter, mixed powder during powder metallurgical technique, granulation, sintering are distributed to final phase constitution Have a significant impact, easily occur that phase constitution is uneven, the aggregation of a certain phase is excessive and is directly exposed in arc-chutes after sintering Under arcing, cause in early stage interrupting process the concentration of electric arc, selective ablation, be partially formed big rhegmalypt from And further deteriorate the stability and service life of material;Often cooperative mechanical after 2. composite powder metallurgy material is machined Glossing improves its surface smoothness, but surface roughness Ra is general in more than 0.5um after mechanical polishing, this coarse Surface easily causes electric arc paradoxical discharge, Partial ablation to deteriorate performance in arc-chutes, causes material premature failure, and then Cause scrapping for arc-chutes.A kind of " preparation method of W-Cu alloy contact materials surface nano-structure " (patent No. CN 101886237 A) propose to carry out shock peening processing to CuW material surfaces using pulsed electron beam, can notable thinning microstructure, Strengthen surface microhardness and wearability;But this method can deteriorate material surface roughness and can just make after need to subsequently machining With, and introducing burr and polishing adverse conditions in machining can all cause the selective ablation of the concentration of electric arc to cause performance great Deteriorate, the lost of life.Electron beam equipment is with high costs and is unfavorable for industrialized production.In recent years, magnetron sputtering is in commercial Application Existing preferable application effect in terms of the wear-and corrosion-resistant coating of field such as cutter coat, section structural, but also non-someone at present Prepare copper tungsten coating to improve arc-chutes electrical contact material on copper tungsten electrical contact material surface by the method for magnetron sputtering Ablation resistance and life-span.
The content of the invention
It is an object of the invention to overcome the deficiencies of the prior art and provide a kind of table of arc-chutes with copper tungsten electrical contact material Face cladding treatment.This method by magnetron sputtering technique successively copper tungsten electrical contact material substrate surface deposit prime coat and Copper tungsten coating, coordinates annealing process and then obtains the copper tungsten coating with nanoscale phase size.The nanoscale phase size of the coating Distribution can greatly improve arc erosion uniformity, it is to avoid the appearance of big rhegmalypt, increase the service life;The nanocrystalline knot of W skeleton Structure can improve resistance to electric arc ability, so as to further increase the service life of contact material.
To reach above-mentioned purpose, the present invention uses following technical scheme, a kind of table of arc-chutes copper tungsten electrical contact material Face cladding treatment, comprises the following steps:
1) copper-tungsten contact material is prepared as base material, and the base material tungsten weight percentage ranges are 60wt% ~90wt%;
2) by the copper tungsten contact material surface after mechanical polishing, cleaning, drying;
3) copper-tungsten contact material is placed on special fixture, is put into vacuum cavity and is fixed on sample stage; Load copper target, tungsten target and X targets, matrix surface is parallel downwards, with the angled placement of target plane;Vacuum cavity is taken out very Sky, makes cavity reach certain background vacuum;
4) it is passed through argon gas and adjusts air pressure, the target power supply of each target position is opened respectively, aura cleans target under certain power Material surface;Start sample disc rotation and at the uniform velocity rotated with 10~20 degree per seconds;Regulation bias, opens X target power supplies, regulates power Sample stage baffle plate is opened afterwards, is started in substrate deposit X film layers;X targets are closed after certain time, bias is closed, sample stage is closed Baffle plate;
5) dc source of copper target and tungsten target is then opened simultaneously, after regulation to specified power ratio, adjusts air pressure, regulation Bias, opens sample stage baffle plate, starts to continue to be co-deposited copper-tungsten coating on the substrate for having X film layers is deposited, after certain time To the copper with certain thickness-tungsten coating;
6) by obtained copper tungsten coating inert gas and hydrogen mixed atmosphere protection in annealing operation, furnace cooling, Treat to less than less than 80 DEG C taking-up samples of temperature, produce copper tungsten electrical contact material overlay coating.
Further, the step 1) in, choose pressure sintering, mechanical alloying method, hot and cold isostatic pressing method, PAS sintering process or Copper tungsten contact material prepared by infiltration method is as base material, and its consistency is more than 90%.
Further, the step 2) in, copper tungsten electrical contact substrate surface is less than through mechanically polishing to surface roughness Ra After 0.5um, 5~10min of ultrasound in alcoholic solution is put into, is subsequently placed in acetone soln after 5~10min of ultrasound, uses electricity Blowing drying.
Further, the step 3) in, X targets are chromium target, nickel target or titanium target;Vacuum cavity background vacuum is 1 × 10-5Pa ~1 × 10-3Pa。
Further, the step 4) in, deposition X film layers are layers of chrome, nickel dam or titanium layer, the thickness of layers of chrome, nickel dam or titanium layer For 30nm~100nm.
Further, the step 5) in, deposition process is co-deposition process;Bias range is -50~-90V.
Further, the step 6) in, the inert gas is nitrogen or argon gas and hydrogen according to 5:1 flow-rate ratio is carried out Mixed atmosphere protection annealing, annealing temperature is at 300~500 DEG C, and annealing time is 1~5h.
Further, the Dc source power ratio of regulation copper target and tungsten target position is (60~180):200W;Operating air pressure scope For:0.3~0.67Pa;In the substrate that deposition has titanium or chromium or nickel prime coat the copper tungsten coating film thickness range that deposits for 2 μm~ 10um;Copper, the atomic ratio of tungsten are (1~5) in obtained copper tungsten plating tunic:(5~9).
Further, the grain size of gained copper tungsten coating copper is between 10~30nm, and the grain size of tungsten is in 40~80nm Between.
Further, the copper tungsten electrical contact material overlay coating resistivity is not more than 120 × 10-8Ω m, hardness is not less than 6.5Gpa, surface roughness is not more than 800nm in below 60nm, rhegmalypt depth.
Copper tungsten electrical contact material overlay coating described above is applied in the electrical contact material of arc-extinguishing chamber of circuit breaker.
The inventive method copper tungsten coating prepared on copper tungsten electrical contact material substrate surface, due to nanoscale phase Size, can form uniform and stable nanoscale ablated region and carry out ablation of the pilot arc to matrix, improve electric arc and selectively concentrate Ablation problem;W skeleton with nanocrystalline structure has good strong hardness and resistance to electric arc ability, can reduce rhegmalypt deep Degree, significantly improves the service life of copper tungsten electrical contact material;Copper tungsten coating can also reduce surface roughness to nanoscale simultaneously Not, the abnormal disruptive discharge phenomenon that electrical contact material is caused due to surface irregularity in use, Jin Erwen are improved Determine service life.
Compared with prior art, the present invention has following technical advantage:
1st, the copper tungsten coating obtained by the present invention has the equally distributed phase size of nanoscale two, can significantly improve tradition Copper tungsten contact surface distributed mutually is uneven, mutually assemble it is excessive caused by electric arc selectively concentrate ablation, form big rhegmalypt, make Into electrical contact material premature failure;And the W skeleton with nanocrystalline structure can further lift the overall strong hardness of copper tungsten material With resistance to electric arc ability, rhegmalypt depth is reduced;
2nd, the present invention deposits prime coat and copper tungsten coating respectively in copper tungsten electrical contact material substrate, can obtain combining good Good coating, the physicochemical property for effectively keeping original copper tungsten material excellent is lifted while material whole conductivity is not reduced Ablation uniformity and resistance to electric arc ability, can also improve surface roughness, and then effectively extend the longevity of contact material in arc-chutes Life, economizes on resources and cost;
3rd, the magnetron sputtering technique cooperation annealing process in the physical vapor deposition technology that the present invention is used, simply controllable, Equipment operation convenience, efficiency high, reliability are high, cost is low, and without follow-up machining, suitable scale is continuously produced, with good Good industrial applications prospect.
Brief description of the drawings
Fig. 1 is the plane transmission photo of CuW60 coating materials;
Fig. 2 (a) is the CuW80 base material metallographs prepared through infiltration method;(b) it is that 2 μ are deposited on the base material Metallograph after m CuW80 coating;
Fig. 3 (a) is that the arc erosion photo and vacuum breakdown curent change of CuW80 base materials prepared by infiltration method are bent Line;(b) it is the arc erosion photo and vacuum breakdown curent change curve of CuW80 coating.
Embodiment
With reference to embodiment, the invention will be further described.
Embodiment 1
A kind of arc-chutes overlay coating processing method of copper tungsten electrical contact material, comprises the following steps:
The CuW60 electrical contact materials that the consistency for choosing infiltration method preparation is 92% touch the CuW60 as base material Head material through mechanically polish be about 0.5 μm to surface roughness after, be put into ultrasound 10min in alcoholic solution, be subsequently placed in third Ultrasound 10min is cleaned by ultrasonic in ketone solution, is dried after finally being rinsed well with deionized water using hair dryer;Then On CuW60 substrates are placed in special fixture and are fixed in magnetron sputtered vacuum cavity sample stage, will load copper target, tungsten target and Chromium target, makes contact material substrate surface parallel downwards, with the placement at 45 ° of copper target, tungsten target and chromium target target plane;To vacuum cavity Vacuum pumping is carried out, cavity background vacuum is reached 5 × 10-5Be passed through inert gas Ar gas after Pa, regulation air pressure to 1.0Pa, opens the target power supply of copper target, tungsten target and chromium target, the aura cleaning target material surface 15min under conditions of respective power 100W After close all target position power supplys;Start sample disc rotation and at the uniform velocity rotated with 10 degree per seconds, regulation bias 50V opens chromium target position Radio-frequency power supply, regulation power is 80W, opens sample stage baffle plate, starts to close chromium target after substrate deposit chromium film layer, 5min, Bias is closed, sample stage baffle plate is closed;The power of the dc source of copper target and tungsten target, regulation copper target and tungsten target is then opened simultaneously Than for 150:200W, adjusts air pressure 0.3Pa, adjusts bias -90V, opens sample baffle plate and starts to have in the substrate of layers of chrome in deposition Continue to close each target power supply and equipment after being co-deposited copper-tungsten coating, deposition 5h, take out sample;Then in H2:N2Than for 1:5 Ambient anneal 5h is carried out under gas flow ratio, annealing temperature is 300 DEG C, heat up and be cooled to stove after room temperature with stove and take out sample Product.The arc-chutes finally given copper tungsten overlay coating, chromium prime coat thickness is 30nm, and copper tungsten coating is 10 μm, and atomic ratio is 4:The grain size of copper is 30nm in 6, and copper tungsten coating, and the grain size of tungsten is 50nm, and copper tungsten plating layer resistivity is 61 × 10-8 Ω m, hardness is 6.5GPa, whole coating even compact, and no significant defect, surface roughness is 61nm, through vacuum arc one The average rhegmalypt depth in surface is 500~800nm after secondary ablation experiments, hence it is evident that less than under equal conditions, at overlay coating Manage CuW60 average 1~2 μm of pit depth.As shown in Figure 1.
Embodiment 2
A kind of arc-chutes overlay coating processing method of copper tungsten electrical contact material, comprises the following steps:
The CuW80 electrical contact materials that the consistency for choosing the sintering preparation of PAS methods is 90% are as base material, by this CuW80 contact materials through mechanically polish be about 0.5 μm to surface roughness after, be put into ultrasound 5min in alcoholic solution, then It is placed in ultrasound 5min in acetone soln to be cleaned by ultrasonic, is dried after finally being rinsed well with deionized water using hair dryer It is dry;Then by CuW80 substrates are placed in special fixture and are fixed in magnetron sputtered vacuum cavity sample stage, copper is loaded Target, tungsten target and titanium target, make contact material substrate surface parallel downwards, with the placement at 45 ° of copper target, tungsten target and titanium target target plane; Vacuum pumping is carried out to vacuum cavity, cavity background vacuum is reached 1 × 10-3Inert gas Ar gas is passed through after Pa, is adjusted Air pressure opens the target power supply of copper target, tungsten target and titanium target to 1.0Pa, and aura cleans target table under conditions of respective power 100W All target position power supplys are closed after the 15min of face;Start sample disc rotation and at the uniform velocity rotated with 15 degree per seconds, adjust bias -50V, beat Titanium target position radio-frequency power supply is opened, regulation power is 90W, opens sample stage baffle plate, start to close after substrate deposit titanium film layer, 5min Titanium target is closed, bias is closed, sample stage baffle plate is closed;The dc source of copper target and tungsten target, regulation to power ratio are then opened simultaneously For 90:200W, adjust air pressure 0.45Pa, adjust bias -70V, open sample baffle plate start deposition have in the substrate of layers of chrome after Continuous be co-deposited after copper-tungsten coating, deposition 1h closes each target power supply and equipment, taking-up sample;Then in H2:N2Than for 1:5 gas Ambient anneal 2h is carried out under body flow-rate ratio, annealing temperature is 400 DEG C, heat up and be cooled to stove after room temperature with stove and take out sample Product.Titanium prime coat thickness is obtained for 50nm, copper tungsten thickness of coating is 1 μm, and atomic ratio is 2:8, the crystal grain of copper is big in copper tungsten coating Small is 20nm, and the grain size of tungsten is 80nm, and deposited copper tungsten plating layer resistivity is 102 × 10-8Ω m, hardness is 11.5GPa, whole coating even compact, no significant defect, surface roughness is 49nm, after ablation experiments of vacuum arc The average rhegmalypt depth in surface is 300~600nm, hence it is evident that less than under equal conditions, being averaged for CuW80 is handled without overlay coating 0.9~1.5 μm of pit depth;And for copper tungsten coating, the vacuum discharge shown in illustration is dammed value (2A), electric arc life-span (21ms) and arc stability (smoothness of curve), hence it is evident that better than under equal conditions, the CuW80's without overlay coating processing is true Empty value (8A), electric arc life-span (18ms) and the arc stability (smoothness of curve) of damming of discharging;See shown in Fig. 2 (a), Fig. 2 (b).
Embodiment 3
A kind of arc-chutes overlay coating processing method of copper tungsten electrical contact material, comprises the following steps:
The CuW90 electrical contact materials that the consistency for choosing infiltration method preparation is 93% touch the CuW90 as base material Head material through mechanically polish be about 0.5 μm to surface roughness after, be put into ultrasound 10min in alcoholic solution, be subsequently placed in third Ultrasound 10min is cleaned by ultrasonic in ketone solution, is dried after finally being rinsed well with deionized water using hair dryer;Then On CuW90 substrates are placed in special fixture and are fixed in magnetron sputtered vacuum cavity sample stage, will load copper target, tungsten target and Nickel target, makes contact material substrate surface parallel downwards, with the placement at 45 ° of copper target, tungsten target and nickel target target plane;To vacuum cavity Vacuum pumping is carried out, cavity background vacuum is reached 5 × 10-4Be passed through inert gas Ar gas after Pa, regulation air pressure to 1.0Pa, opens the target power supply of copper target, tungsten target and nickel target, the aura cleaning target material surface 15min under conditions of respective power 100W After close all target position power supplys;Start sample disc rotation and at the uniform velocity rotated with 20 degree per seconds, adjust bias -50V, open nickel target position Radio-frequency power supply, regulation power is 100W, opens sample stage baffle plate, starts to close nickel target after substrate deposit nickel film layer, 5min, Bias is closed, sample stage baffle plate is closed;The dc source of copper target and tungsten target is then opened simultaneously, and regulation to power ratio is 60: 200W, adjusts air pressure 0.67Pa, adjusts bias -90V, and opening sample baffle plate, which starts to have in deposition, continues coprecipitated in the substrate of layers of chrome Each target power supply and equipment are closed after product copper-tungsten coating, deposition 3h, sample is taken out;Then in H2:N2Than for 1:5 gas flow Than lower progress ambient anneal 1h, annealing temperature is 500 DEG C, heats up and is cooled to stove after room temperature with stove and takes out sample.Obtain Chromium prime coat thickness is 100nm, and copper tungsten thickness of coating is 5 μm, and atomic ratio is 1:9, the grain size of copper is in copper tungsten coating 10nm, the grain size of tungsten is 40nm, and deposited copper tungsten plating layer resistivity is 120 × 10-8Ω m, hardness is 16Gpa, entirely Coating even compact, no significant defect, surface roughness is 35nm, the average ablation in surface after ablation experiments of vacuum arc Hole depth is 300~500nm, hence it is evident that less than under equal conditions, CuW90 average 0.6~1.1 μm of erosion is handled without overlay coating Cheat depth.
Table 1
From the contrast of above-described embodiment can be seen that through copper tungsten coating copper grain size obtained by the inventive method 10~ Between 30nm, tungsten grain size is between 30~50nm, and resistivity is not more than 120 × 10-8Ω m, hardness is not less than 6.5Gpa, Surface roughness is not more than 800nm in below 60nm, rhegmalypt depth;And it is this be evenly distributed, the structure that phase size is minimum can To significantly improve the ablation uniformity of electric arc, pit is shallow and is evenly distributed;Stable arc current, improves making for electrical contact material With life-span and combination property, shown in such as Fig. 3 (a), 3 (b).
Although it is understood that the present invention is disclosed as above with preferred embodiment, but above-described embodiment and being not used to Limit the present invention.For any those skilled in the art, without departing from the scope of the technical proposal of the invention, The technology contents that may be by the disclosure above make many possible variations and modification to technical solution of the present invention, or are revised as The equivalent embodiment of equivalent variations.Therefore, every content without departing from technical solution of the present invention, the technical spirit according to the present invention To any simple modifications, equivalents, and modifications made for any of the above embodiments, the model of technical solution of the present invention protection is still fallen within In enclosing.

Claims (10)

1. a kind of arc-chutes overlay coating processing method of copper tungsten electrical contact material, it is characterised in that comprise the steps:
1) prepare copper-tungsten contact material as base material, the base material tungsten weight percentage ranges be 60wt%~ 90wt%;
2) by the copper tungsten contact material surface after mechanical polishing, cleaning, drying;
3) copper-tungsten contact material is placed on special fixture, is put into vacuum cavity and is fixed on sample stage;Load Copper target, tungsten target and X targets, matrix surface are parallel downwards, with the angled placement of target plane;Vacuum cavity is vacuumized, made Cavity reaches certain background vacuum;
4) it is passed through argon gas and adjusts air pressure, the target power supply of each target position is opened respectively, aura cleans target table under certain power Face;Start sample disc rotation and at the uniform velocity rotated with 10~20 degree per seconds;Regulation bias, opens X target power supplies, regulates and beaten after power Sample stage baffle plate is opened, is started in substrate deposit X film layers;X targets are closed after certain time, bias is closed, sample stage baffle plate is closed;
5) dc source of copper target and tungsten target is then opened simultaneously, after regulation to specified power ratio, adjusts air pressure, regulation is inclined Pressure, opens sample stage baffle plate, starts to continue to be co-deposited copper-tungsten coating on the substrate for having X film layers is deposited, is obtained after certain time Copper tungsten-tungsten coating with certain thickness;
6) obtained copper tungsten coating is annealed in the mixed atmosphere protection of inert gas and hydrogen, furnace cooling is treated to temperature Less than less than 80 DEG C taking-up samples, produce copper tungsten electrical contact material overlay coating.
2. a kind of arc-chutes according to claim 1 overlay coating processing method of copper tungsten electrical contact material, its feature It is, the step 1) in, choose pressure sintering, mechanical alloying method, hot and cold isostatic pressing method, PAS sintering process or infiltration method and prepare Copper tungsten contact material as base material, and its consistency is more than 90%.
3. a kind of arc-chutes according to claim 1 overlay coating processing method of copper tungsten electrical contact material, its feature It is, the step 2) in, by copper tungsten electrical contact substrate surface after mechanically polishing and being less than 0.5 μm to surface roughness Ra, put Enter into alcoholic solution 5~10min of ultrasound, be subsequently placed in acetone soln after 5~10min of ultrasound, dried using hair dryer.
4. a kind of arc-chutes according to claim 1 overlay coating processing method of copper tungsten electrical contact material, its feature It is, the step 3) in, X targets are chromium target, nickel target or titanium target;Vacuum cavity background vacuum is 1 × 10-5Pa~1 × 10- 3Pa。
5. a kind of arc-chutes according to claim 1 overlay coating processing method of copper tungsten electrical contact material, its feature Be, the step 4) in, deposition X film layers are layers of chrome, nickel dam or titanium layer, the thickness of layers of chrome, nickel dam or titanium layer for 30nm~ 100nm。
6. a kind of arc-chutes according to claim 1 overlay coating processing method of copper tungsten electrical contact material, its feature It is, the step 5) in, deposition process is co-deposition process;Bias range is -50~-90V.
7. a kind of arc-chutes according to claim 1 overlay coating processing method of copper tungsten electrical contact material, its feature It is, the step 6) in, inert gas is nitrogen or argon gas and hydrogen according to 5:1 flow-rate ratio carries out mixed atmosphere protection and moved back Fire, annealing temperature is at 300~500 DEG C, and annealing time is 1~5h.
8. a kind of arc-chutes according to claim 1 overlay coating processing method of copper tungsten electrical contact material, its feature It is, the Dc source power ratio of regulation copper target and tungsten target position is (60~180):200W;Operating air pressure scope is:0.3~ 0.67Pa;The copper tungsten coating film thickness range deposited in the substrate that deposition has titanium, chromium or nickel prime coat is 1 μm~10um;Obtain Copper tungsten plating tunic in copper, tungsten atomic ratio be (1~5):(5~9).
9. a kind of arc-chutes according to claim 8 overlay coating processing method of copper tungsten electrical contact material, its feature Be, the particle size distribution of gained copper tungsten coating copper between 10~30nm, the particle size distribution of tungsten 30~50nm it Between.
10. the overlay coating processing method of the arc-chutes copper tungsten electrical contact material according to claim any one of 1-9, its It is characterised by, the copper tungsten electrical contact material overlay coating resistivity is not more than 120 × 10-8Ω m, hardness is not less than 6.5Gpa, surface roughness is not more than 800nm in below 60nm, rhegmalypt depth.
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