CN202930387U - Array substrate and display apparatus - Google Patents
Array substrate and display apparatus Download PDFInfo
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- CN202930387U CN202930387U CN 201220686349 CN201220686349U CN202930387U CN 202930387 U CN202930387 U CN 202930387U CN 201220686349 CN201220686349 CN 201220686349 CN 201220686349 U CN201220686349 U CN 201220686349U CN 202930387 U CN202930387 U CN 202930387U
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Abstract
The utility model discloses an array substrate which comprises a plurality of pixel units positioned on the substrate. Each pixel unit includes: a film transistor structure formed on the substrate; an organic light-emitting diode which is driven by the film transistor structure, is positioned within a pixel area of the pixel unit, and successively comprises, along a direction far away from the substrate, a transparent first electrode, a light emitting layer and a second electrode of a reflection ray; a half-reflection and half-transparent layer positioned between the organic light-emitting diode and the film transistor structure; and a color film positioned between the second electrode of the organic light-emitting diode and the half-reflection and half-transparent layer. A micro-cavity structure is formed by the second electrode of the organic light-emitting diode and the half-reflection and half-transparent layer. The utility model also discloses a display apparatus including the above array substrate. The micro-cavity structure, formed on the array substrate, is simple in structure and simple in manufacturing process.
Description
Technical field
The utility model relates to Display Technique field, particularly a kind of array base palte and display unit.
Background technology
Organic Light Emitting Diode (Organic Light-Emitting Diodes, OLED) simple with its preparation technology, cost is low, glow color can regulate arbitrarily and be easy to the advantages such as large tracts of land and flexible bending in visible region, is considered to one of following most important Display Technique.Especially the power efficiency of white light OLED (WOLED) has surpassed 60lm/W, and the life-span reached more than 20,000 hours, had greatly promoted the development of WOLED.
As shown in (a) in Fig. 1, wherein a kind of WOLED adopts red-green-blue to be doping to organic luminous layer 102, make organic luminous layer 102 send white light, organic luminous layer 102 is between negative electrode 101 and anode 103, and the white light that luminescent layer sends is by the negative electrode 101 rear side outgoing from anode 103 of reflection.in order to improve the transmitance of light, increase the brightness of WOLED display unit, a side at anode, and on corresponding color film, the zone of each color filter respectively is provided with half-reflection and half-transmission layer 103 ＇, thereby form micro-cavity structure (microcavity structure), as shown in (b) in Fig. 1, micro-cavity structure refers to that the thickness that forms is the structure of micron dimension between a reflector and half anti-semi-permeable layer, its principle of strengthening light intensity is: light can constantly reflect in layer, due to resonance effect, therefore finally the light of specific wavelength can be strengthened from the light that the half-reflection and half-transmission layer penetrates, and the wavelength that this is strengthened is relevant with microcavity thickness.In the white organic LED display unit, the different pixels unit is be used to the light that sends different colours, therefore the microcavity in the different pixels unit should be able to make different wave length (light identical with color film color corresponding outside microcavity) obtain to strengthen, and namely the microcavity thickness in the different pixels unit is different.
Be depicted as the hierarchical structure schematic diagram of existing two kinds of WOLED array base paltes as Fig. 2 and 3, color film is positioned at the outside of micro-cavity structure, by above-mentioned principle every kind of micro-cavity structure variable thickness sample that color is corresponding on color film as can be known, as 400 in 300 in Fig. 2 and Fig. 3.Because light wavelength of all kinds is different, its corresponding micro-cavity structure also is not quite similar, the also difference of thickness.For example in Fig. 3, Cathode is the negative electrode of Organic Light Emitting Diode, and Anode is anode, between the two the organic luminous layer (usually adopting the trichromatic organic material of RGB to mix) for emitting white light.R, G, B and W represent respectively the bright dipping zone of ruddiness, green glow, blue light and white light, and Red CF, Green CF and Blue CF are respectively red on color film, green and blue filter.The micro-cavity structure of each coloured light all comprises IZO or the ITO layer that is positioned at OC layer (protective layer) top; for R, G, B; also comprise the nitride of SiNx and SiOx(silicon and the oxide of silicon) layer; also comprise IZO/ITO layer except anode for R and B; after the white light that WOLED sends saw through above-mentioned each layer, the transmitance of corresponding coloured light can increase.As shown in Figure 4, the transmitance (brightness) of dotted line correspondence during without micro-cavity structure, solid line is approximately original 1.6 times to the transmitance of micro-cavity structure should be arranged for the blue light transmitance, be approximately original 2.5 times for the green glow transmitance, be approximately original 2.2 times for the ruddiness transmitance.
Can be found out by Fig. 2 and Fig. 3, although existing micro-cavity structure has increased the transmitance of light, existing micro-cavity structure hierarchical structure more complicated, and also zone corresponding to the filter of each color make the micro-cavity structure of different-thickness, and manufacture craft is more complicated.
The utility model content
The technical problem that (one) will solve
The technical problems to be solved in the utility model is: how to realize the simple micro-cavity structure of manufacture craft, thereby increase the transmitance of WOLED display unit.
(2) technical scheme
For solving the problems of the technologies described above, the utility model provides a kind of array base palte, comprises a plurality of pixel cells that are positioned on substrate, and described pixel cell comprises:
Be formed on the thin-film transistor structure on substrate;
And the Organic Light Emitting Diode that is driven by described thin-film transistor structure, described Organic Light Emitting Diode is positioned at the pixel region of described pixel cell, and described Organic Light Emitting Diode comprises the second electrode of the first transparent electrode, luminescent layer, reflection ray on away from the direction of substrate successively;
The half-reflection and half-transmission layer is between described Organic Light Emitting Diode and described thin-film transistor structure;
Color film, between second electrode and described half-reflection and half-transmission layer of described Organic Light Emitting Diode, and the thickness of the different colours filter of color film is different;
The second electrode of described Organic Light Emitting Diode and described half-reflection and half-transmission layer form micro-cavity structure.
wherein, described thin-film transistor structure comprises: be formed on the first grid on substrate, second grid, be formed on the gate insulation layer on described first grid and second grid, be formed on the first active layer and the second active layer on described gate insulation layer, be formed on the first source electrode and the first drain electrode on the first active layer, be formed on the second source electrode and the second drain electrode on the second active layer, described the first drain electrode connects described second grid, described first grid, gate insulation layer, the first active layer, the first source electrode and the first drain electrode form switching thin-film transistor, described second grid, gate insulation layer, the second active layer, the second source electrode and the second drain electrode form and drive thin-film transistor,
The second drain electrode of described driving thin-film transistor is electrically connected to the first electrode of described Organic Light Emitting Diode.
Wherein, also be formed with passivation layer on described thin-film transistor structure; Described Organic Light Emitting Diode is formed on the top of described passivation layer, the second electrode of described Organic Light Emitting Diode is negative electrode, the first electrode is anode, and described anode connects the second drain electrode by the via hole of described passivation layer, described half-reflection and half-transmission layer is formed between described thin-film transistor structure and passivation layer, and be positioned at the pixel region of described pixel cell and the source and drain areas of described thin-film transistor structure, described color film is formed on described passivation layer, and be positioned at the pixel region of described pixel cell, the anode of described light-emitting diode is positioned at above described color film.
Wherein, also be formed with passivation layer on described thin-film transistor structure; Described Organic Light Emitting Diode is formed on the top of described passivation layer, the first electrode of described Organic Light Emitting Diode is negative electrode, the second electrode is anode, and described negative electrode connects the second drain electrode by the via hole of described passivation layer, described half-reflection and half-transmission layer is formed between described thin-film transistor structure and passivation layer, and be positioned at the pixel region of described pixel cell and the source and drain areas of described thin-film transistor structure, described color film is formed on described passivation layer, and be positioned at the pixel region of described pixel cell, the negative electrode of described light-emitting diode is positioned at above described color film.
Wherein, also be provided with resin bed between described color film and described the first electrode, described the first electrode connects described the second drain electrode by the via hole that runs through resin bed and passivation layer.
Wherein, the half-reflection and half-transmission layer of the source and drain areas of the thin-film transistor structure of respective pixel unit, lay respectively at the below of described the first source electrode, the first drain electrode, the second source electrode and the second drain electrode, and the figure of described half-reflection and half-transmission layer is consistent with the figure of described the first source electrode, the first drain electrode, the second source electrode and the second drain electrode.
Wherein, in the described thin-film transistor structure corresponding region of described pixel cell, and be positioned on described the first electrode and also be formed with pixel defining layer.
Wherein, described half-reflection and half-transmission layer by any one metal in silver, aluminium, molybdenum, copper, titanium, chromium or in them any two kinds or above alloy consist of, and transmitance is 5% ~ 95%.
Wherein, described half-reflection and half-transmission layer thickness is:
Wherein, the thickness of described color film is:
Wherein, described color film comprises: the color film of RGB, red, green, blue and yellow or red, green, blue and white pattern.
The utility model also provides a kind of display unit, comprises the described array base palte of above-mentioned any one.
(3) beneficial effect
The utility model is by forming micro-cavity structure between the reflecting electrode (negative electrode or anode) of half-reflection and half-transmission layer and Organic Light Emitting Diode, it is inner that color film is positioned at this micro-cavity structure, not only increased the transmitance of light, and for each pixel cell, because the color film of the pixel cell of different colours originally will form in different step, therefore their thickness can be controlled respectively easily, therefore array base palte preparation technology of the present utility model is simple, cost is low.
Description of drawings
In Fig. 1, (a) is existing Organic Light Emitting Diode schematic diagram without micro-cavity structure, (b) is existing micro-cavity structure principle schematic;
Fig. 2 is existing a kind of WOLED array base-plate structure schematic diagram with micro-cavity structure;
Fig. 3 is that existing another kind is with the WOLED array base-plate structure schematic diagram of micro-cavity structure;
Fig. 4 is that micro-cavity structure is to the lifting curve schematic diagram of transmitance;
Fig. 5 is a kind of array base-plate structure schematic diagram of the utility model embodiment;
Fig. 6 forms the schematic diagram of thin-film transistor structure and half-reflection and half-transmission layer in the method flow of array base palte of construction drawing 5 on substrate;
Fig. 7 forms the schematic diagram of passivation layer figure on the substrate basis of Fig. 6;
Fig. 8 forms the structural representation of color film pattern on the substrate basis of Fig. 7;
Fig. 9 forms the structural representation of resin bed figure on the substrate basis of Fig. 8;
Figure 10 forms the structural representation of anode on the substrate basis of Fig. 9;
Figure 11 forms the structural representation of pixel definition layer pattern on the substrate basis of Figure 10.
Embodiment
Below in conjunction with drawings and Examples, embodiment of the present utility model is described in further detail.Following examples are used for explanation the utility model, but are not used for limiting scope of the present utility model.
As shown in Figure 5, the array base palte of the present embodiment comprises: be formed on the pixel cell that many grid lines, data wire and grid line on substrate 1 and data wire intersect to form.Pixel cell comprises: the Organic Light Emitting Diode that is formed on the thin-film transistor structure on substrate and is driven by thin-film transistor structure, Organic Light Emitting Diode is arranged in the pixel region (be often referred to pixel cell the viewing area except thin-film transistor) of pixel cell, i.e. a-quadrant in Fig. 5.Pixel cell also comprises color film 9.Organic Light Emitting Diode comprises the second electrode 14 of the first transparent electrode 11, luminescent layer 13, reflection ray on away from the direction of substrate 1 successively.
In order to realize micro-cavity structure, also comprise half-reflection and half-transmission layer 8 in the pixel cell of the present embodiment array base palte.Half-reflection and half-transmission layer 8 is between Organic Light Emitting Diode and thin-film transistor structure.Color film 9 is between second electrode 14 and half-reflection and half-transmission layer 8 of Organic Light Emitting Diode, and in color film 9, the thickness of different colours filter is different.Half-reflection and half-transmission layer 8 and color film 9 are positioned at the pixel region A of described pixel cell.The part of half-reflection and half-transmission layer 8 also is arranged in the source drain region (this zone exists the half-reflection and half-transmission layer to cause owing to adopting at manufacturing process and source-drain electrode to form with a Mask) of thin-film transistor structure.The second electrode 14 of Organic Light Emitting Diode forms micro-cavity structures with half-reflection and half-transmission layer 8, and wherein, color film 9 is positioned at micro-cavity structure inside, specifically between second electrode 14 and half-reflection and half-transmission layer 8 of Organic Light Emitting Diode.Therefore can regulate microcavity thickness by the thickness of controlling color film 9; Because the color film of the pixel cell of different colours originally will form in different step, therefore their thickness can be controlled respectively easily, do not need additionally the pixel of certain color to be made separately other layer and control thickness, therefore array base palte preparation technology of the present utility model is simple, cost is low.
Thin-film transistor structure specifically as shown in Figure 5, comprise: be formed on first grid 2, second grid 2 ＇ and grid line (not shown grid line on substrate 1, difference due to production process, may have the half-reflection and half-transmission layer below the first source-drain layer 6 and the second source-drain layer 6 ＇, and the figure of this half-reflection and half-transmission layer is consistent with the figure of the first source-drain layer 6 and the second source-drain layer 6 ＇.because the half-reflection and half-transmission layer is positioned at the first source-drain layer 6, the below of the second source-drain layer 6 ＇, therefore the half-reflection and half-transmission layer is also electric conducting material), be formed on first grid 2, gate insulation layer 3 on second grid 2 ＇ and grid line, be formed on the first active layer 4 and the second active layer 4 ＇ on gate insulation layer 3, be formed on the insulating barrier 5 on the first active layer 4 and the second active layer 4 ＇, the the first source-drain layer 6(that is formed on insulating barrier 5 comprises the first source electrode and the first drain electrode) and the second source-drain layer 6 ＇ (comprising the second source electrode and the second drain electrode), be formed on the passivation layer 7 on the first source-drain layer 6 and the second source-drain layer 6 ＇.Wherein, first grid 2, gate insulation layer 3, the first active layer 4, insulating barrier 5 and the first source-drain layer 6 form switching thin-film transistor, and second grid 2 ＇, gate insulation layer 3, the second active layer 4 ＇, insulating barrier 5 and the second source-drain layer 6 ＇ form and drive thin-film transistor.
In the present embodiment, half-reflection and half-transmission layer 8 is formed between insulating barrier 5 and passivation layer 7, and color film 9 is formed on passivation layer 7.Organic Light Emitting Diode is positioned at the top of half-reflection and half-transmission layer 8 and color film 9, and is formed on pixel region A by pixel defining layer (Pixel Define layer, PDL) 12.In the present embodiment, the first electrode 11 is anode, and the second electrode 14 is negative electrode (can be also: the first electrode 11 be negative electrode, and the second electrode 14 is anode), and the first electrode 11 connects the second drain electrode by the via hole on passivation layer 7.The second electrode 14 can be the reflecting electrode of being made by reflecting material, can be also to scribble the reflector to form reflecting electrode on the second electrode 14.
The grid of switching thin-film transistor (first grid 2) connects grid line, source electrode (the first source electrode) connection data line, drain electrode (the first drain electrode) connects the grid (second grid 2 ＇) that drives thin-film transistor, the source electrode (the second source electrode) that drives thin-film transistor connects supply voltage, and drain electrode (the second drain electrode) is connected with the first electrode 11 of OLED.It is rear from substrate 1 bottom outgoing, as shown in Figure 5 that the white light that white-light organic light-emitting layer 13 sends reaches each following layer through the first electrode 11.After white light arrives half-reflection and half-transmission layer 8, part beam projecting, part light reflection, the light of reflection is again through the second electrode 14 reflections, reverberation is between half-reflection and half-transmission layer 8 and the second electrode 14 in reflection process, due to resonance effect, thus finally from the light that half-reflection and half-transmission layer 8 penetrates the light of corresponding color wavelength can be strengthened, thereby increase transmitance.
In order to increase the space length of micro-cavity structure, further increase transmitance, also be formed with via hole connection the second drain electrode that resin bed 10, the first electrodes 11 are connected with resin bed by running through passivation layer 7 between color film 9 and anode 11.
In the present embodiment, half-reflection and half-transmission layer 8 by any one metal in silver, aluminium, molybdenum, copper, titanium, chromium or in them any two kinds or above alloy consist of, its transmitance is 5% ~ 95%; Thickness is
The thickness of color film 9 is:
Color film 9 can be the color film of RGB, red, green, blue and yellow or red, green, blue and white pattern.
The manufacture method of above-mentioned array base palte comprises:
Step 1: form the figure that comprises thin-film transistor structure, half-reflection and half-transmission layer 8 and passivation layer 7 on substrate 1, to determine a plurality of pixel cells on substrate 1.Concrete steps are as follows:
As shown in Figure 6, the figure of via hole on the grid (first grid 2, second grid 2 ＇), gate insulation layer, active layer (the first active layer 4, the second active layer 4 ＇), insulating barrier 5 and the insulating barrier 5 that form successively (can be the various ways such as coating, sputter, deposition) thin-film transistor structure on substrate.
Form semi-reflective and semitransmittable thin film and source and leak metallic film, form the figure of the source-drain electrode (the first source-drain layer 6, the second source-drain layer 6 ＇) of half-reflection and half-transmission layer 8 and thin-film transistor structure by a composition technique (composition technique generally includes the techniques such as photoresist coating, exposure, development, etching, photoresist lift off).Semi-reflective and semitransmittable thin film by any one metal in silver, aluminium, molybdenum, copper, titanium, chromium or in them any two kinds or above alloy consist of, its thickness is
Transmitance is 5% ~ 95%.Form simultaneously the figure of half-reflection and half-transmission layer 8 and the first source-drain layer 6, the second source-drain layer 6 ＇ herein by composition technique, obviously, also there is the half-reflection and half-transmission layer below the first source-drain layer 6 and the second source-drain layer 6 ＇, and consistent with the figure of described the first source-drain layer 6 and the second source-drain layer 6 ＇.Substrate after this step shows the structure of a pixel cell as shown in Figure 6, and the zone at thin-film transistor structure place is non-pixel region, and pixel region is A.Thin-film transistor structure comprises: switching thin-film transistor and driving thin-film transistor, wherein, comprise the first source electrode and the first drain electrode layer by first grid 2, gate insulation layer 3, the first active layer 4, insulating barrier 5 and the first source-drain layer 6() form switching thin-film transistor; Formed by second grid 2 ＇, gate insulation layer 3, the second active layer 4 ＇, insulating barrier 5 and the second source-drain layer 6 ＇ (comprising the second source electrode and the second drain electrode layer) and drive thin-film transistor.
Form passivation layer 7, the substrate after formation passivation layer 7 as shown in Figure 7.
Step 2: as shown in Figure 8, form the figure of color film 9 at the pixel region A of pixel cell, make the thickness difference of the different colours filter of color film 9.This step specifically comprises:
The formation of color film 9 is that (RGB is 3 times) forms several times, forms each time a kind of figure of color filter, successively forms the figure of other color filter, thereby forms the figure of color film 9.Concrete mode is: form a kind of colored filter film of color on passivation layer 7, form the figure of this color filter by composition technique at pixel region A.Successively form the figure of other color filter by this mode, thereby form the figure of color film 9, and when forming the figure of each color filter, the colored filter film thickness of formed every kind of color is different, thereby makes the thickness of different colours filter of color film 9 of final formation different.Preferably, the thickness of color film 9 exists
Between; Why the thickness range of color film is larger, is because color film is arranged in micro-cavity structure, therefore can control microcavity thickness by the thickness of regulating color film, thereby makes the micro-cavity structure in each pixel cell strengthen the light identical with its color film 9 colors.Because the color film of the pixel cell of different colours originally will form in different step, therefore their thickness can be controlled respectively easily, do not need additionally the pixel of certain color to be made separately other layer and control thickness, therefore array base palte preparation technology of the present utility model is simple, cost is low.
Step 3: the pixel region A at pixel cell is formed with OLED, makes color film 9 between Organic Light Emitting Diode and half-reflection and half-transmission layer 8.This step specifically comprises:
As shown in Figure 9, form via hole by composition technique etching on passivation layer 7.In order to increase the space length of micro-cavity structure, further increase transmitance, can also form resin bed 10 on passivation layer 7, via hole runs through passivation layer 7 and resin bed 10.
As shown in figure 10, form transparent conductive film, be formed with the figure of the first electrode 11 of OLED by composition technique, make the first electrode 11 connect thin-film transistor structure by via hole, the concrete drain electrode that connects the driving thin-film transistor.
As shown in figure 11, form insulation film, form the figure of pixel defining layer 12 by composition technique, be defined in pixel region A with the position with Organic Light Emitting Diode to be formed;
Form the second electrode 14 of organic luminous layer 13 and Organic Light Emitting Diode, thereby be formed with OLED, the final array base palte that forms as shown in Figure 5.The second electrode 14 is reflecting electrode, can adopt reflecting material to form when making, or formed the reflector before forming the second electrode 14, then the second electrode 14 is formed on the reflector, or form the second electrode 14, then form the reflector on the second electrode 14.
The utility model also provides a kind of display unit, comprises above-mentioned array base palte.Described display unit can be any product or parts with Presentation Function such as Electronic Paper, oled panel, OLED display, OLED TV, DPF, mobile phone, panel computer.
Above execution mode only is used for explanation the utility model; and be not limitation of the utility model; the those of ordinary skill in relevant technologies field; in the situation that do not break away from spirit and scope of the present utility model; can also make a variety of changes and modification; therefore all technical schemes that are equal to also belong to category of the present utility model, and scope of patent protection of the present utility model should be defined by the claims.
Claims (12)
1. an array base palte, comprise a plurality of pixel cells that are positioned on substrate, and described pixel cell comprises:
Be formed on the thin-film transistor structure on substrate;
And the Organic Light Emitting Diode that is driven by described thin-film transistor structure, described Organic Light Emitting Diode is positioned at the pixel region of described pixel cell, and described Organic Light Emitting Diode comprises the second electrode of the first transparent electrode, luminescent layer, reflection ray on away from the direction of substrate successively;
The half-reflection and half-transmission layer is between described Organic Light Emitting Diode and described thin-film transistor structure;
Color film, between second electrode and described half-reflection and half-transmission layer of described Organic Light Emitting Diode, and the thickness of the different colours filter of color film is different;
The second electrode of described Organic Light Emitting Diode and described half-reflection and half-transmission layer form micro-cavity structure.
2. array base palte as claimed in claim 1, it is characterized in that, described thin-film transistor structure comprises: be formed on the first grid on substrate, second grid, be formed on the gate insulation layer on described first grid and second grid, be formed on the first active layer and the second active layer on described gate insulation layer, be formed on the first source electrode and the first drain electrode on the first active layer, be formed on the second source electrode and the second drain electrode on the second active layer, described the first drain electrode connects described second grid, described first grid, gate insulation layer, the first active layer, the first source electrode and the first drain electrode form switching thin-film transistor, described second grid, gate insulation layer, the second active layer, the second source electrode and the second drain electrode form and drive thin-film transistor,
The second drain electrode of described driving thin-film transistor is electrically connected to the first electrode of described Organic Light Emitting Diode.
3. array base palte as claimed in claim 2, is characterized in that, also is formed with passivation layer on described thin-film transistor structure; Described Organic Light Emitting Diode is formed on the top of described passivation layer, the second electrode of described Organic Light Emitting Diode is negative electrode, the first electrode is anode, and described anode connects the second drain electrode by the via hole of described passivation layer, described half-reflection and half-transmission layer is formed between described thin-film transistor structure and passivation layer, and be positioned at the pixel region of described pixel cell and the source and drain areas of described thin-film transistor structure, described color film is formed on described passivation layer, and be positioned at the pixel region of described pixel cell, the anode of described light-emitting diode is positioned at above described color film.
4. array base palte as claimed in claim 2, is characterized in that, also is formed with passivation layer on described thin-film transistor structure; Described Organic Light Emitting Diode is formed on the top of described passivation layer, the first electrode of described Organic Light Emitting Diode is negative electrode, the second electrode is anode, and described negative electrode connects the second drain electrode by the via hole of described passivation layer, described half-reflection and half-transmission layer is formed between described thin-film transistor structure and passivation layer, and be positioned at the pixel region of described pixel cell and the source and drain areas of described thin-film transistor structure, described color film is formed on described passivation layer, and be positioned at the pixel region of described pixel cell, the negative electrode of described light-emitting diode is positioned at above described color film.
5. array base palte as described in claim 3 or 4, is characterized in that, also is provided with resin bed between described color film and described the first electrode, and described the first electrode connects described the second drain electrode by the via hole that runs through resin bed and passivation layer.
6. as claim 3 and 4 described array base paltes, it is characterized in that, the half-reflection and half-transmission layer of the source and drain areas of the thin-film transistor structure of respective pixel unit, lay respectively at the below of described the first source electrode, the first drain electrode, the second source electrode and the second drain electrode, and the figure of described half-reflection and half-transmission layer is consistent with the figure of described the first source electrode, the first drain electrode, the second source electrode and the second drain electrode.
7. array base palte as claimed in claim 1, is characterized in that, in the described thin-film transistor structure corresponding region of described pixel cell, and is positioned on described the first electrode and also is formed with pixel defining layer.
8. array base palte as claimed in claim 1, is characterized in that, described half-reflection and half-transmission layer by any one metal in silver, aluminium, molybdenum, copper, titanium, chromium or in them any two kinds or above alloy consist of, and transmitance is 5% ~ 95%.
9. array base palte as claimed in claim 1, is characterized in that, described half-reflection and half-transmission layer thickness is:
10. array base palte as claimed in claim 1, is characterized in that, the thickness of described color film is:
11. array base palte as claimed in claim 1 is characterized in that, described color film comprises: the color film of RGB, red, green, blue and yellow or red, green, blue and white pattern.
12. a display unit is characterized in that, comprises array base palte as described in any one in claim 1 ~ 11.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220686349 CN202930387U (en) | 2012-12-12 | 2012-12-12 | Array substrate and display apparatus |
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| CN 201220686349 CN202930387U (en) | 2012-12-12 | 2012-12-12 | Array substrate and display apparatus |
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| CN202930387U true CN202930387U (en) | 2013-05-08 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107122750A (en) * | 2017-05-03 | 2017-09-01 | 京东方科技集团股份有限公司 | A kind of optical fingerprint identification device and display panel |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107122750A (en) * | 2017-05-03 | 2017-09-01 | 京东方科技集团股份有限公司 | A kind of optical fingerprint identification device and display panel |
| CN107122750B (en) * | 2017-05-03 | 2020-03-31 | 京东方科技集团股份有限公司 | Optical fingerprint identification device and display panel |
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