CN202853880U - Device for testing beam characteristics of semiconductor laser - Google Patents
Device for testing beam characteristics of semiconductor laser Download PDFInfo
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- CN202853880U CN202853880U CN 201220516599 CN201220516599U CN202853880U CN 202853880 U CN202853880 U CN 202853880U CN 201220516599 CN201220516599 CN 201220516599 CN 201220516599 U CN201220516599 U CN 201220516599U CN 202853880 U CN202853880 U CN 202853880U
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- semiconductor laser
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Abstract
The utility model provides a simple and practical device for testing the beam characteristics of a semiconductor laser. The device for testing the beam characteristics of the semiconductor laser comprises a semicircular beam receiving device and a rotation driving mechanism; the output end of the semiconductor laser is located in the center of the semicircular beam receiving device, a plurality of light receiving devices are arranged, facing the semiconductor laser, on the semicircular beam receiving device, and each light receiving device is connected with a micro detector; and the semicircular beam receiving device or the semiconductor laser is driven by the rotation driving mechanism to rotate with an optical axis of an output beam of the semiconductor laser as a rotation axis. With the device, an entire real-time curve of the beam characteristics of the laser can be obtained, the beam characteristics of the laser can be intuitively described, and the measurement on spatial beam characteristic parameters of the semiconductor laser can be implemented.
Description
Technical field
The utility model belongs to the laser instrument field tests, relates to a kind of semiconductor laser beam characteristic test device.
Background technology
Along with improving constantly of semiconductor laser performance, it has obtained in fields such as industrial processes, laser medicine, laser displayes more and more for using widely.But semiconductor laser is because its special active area waveguiding structure, the fast axle angle of divergence is larger, and the fast and slow axis light beam is asymmetric, causes the mass ratio of its output beam relatively poor, so the beam quality of semiconductor laser becomes one of critical bottleneck of its application of restriction.How research improves the beam quality of semiconductor laser, the information such as necessary its fast and slow axis angle of divergence of Obtaining Accurate, waist radius, so the measurement of noise spectra of semiconductor lasers beam characteristics is just more and more paid close attention to by people.For many years, people have proposed the method for the multiple measuring semiconductor angle of divergence.Wherein method of testing commonly used has:
(1) direct method of measurement
The direct method of measurement mainly comprises two kinds
A) vertical spacing mensuration (semiconductor laser measuring device parameter [200510115043] patent).Namely keeping laser instrument luminous point and laser acquisition vertical range is a fixed value, mode with tangential movement, laser detector is moved to laser instrument light emitting region zone with the vertical plane perpendicular to the luminous axis of laser instrument, measure the laser optical power at diverse location place, reach the purpose of beam characteristics test.It is more single that but this method test is pointed to, and each test point reference position is relatively different from the absolute position of laser instrument luminous point, causes the each point test error larger.
B) CCD mensuration (laser beam divergent angle test method [01108756.0] patent).Apart from laser instrument luminous point a distance ccd video camera is set, it is concentric that ccd video camera camera lens receiving center and laser instrument luminous point keep, and after laser instrument was luminous, the mode by the figure collection obtained the luminous zone of laser instrument.This method can be measured the light-emitting zone of laser instrument intuitively, but is subject to the restriction of the size of CCD own and cost, is only applicable to measure the laser beam characterisitic parameter of smaller power.
(2) indirect method of measurement (the direct measuring system of SCM Based laser beam characteristic hot spot, " photoelectric technology application " 2004-10).Namely detected laser is united when trigger pip is sent GPS simultaneously, with the recording laser impulse ejection constantly at certain distance irradiation diffuse reflection target plate.Photodetector received pulse laser signal sends trigger pip through frequency measurement, the backward image capture apparatus of delaying time (ccd video camera or thermal imaging system), makes its recording laser light spot image.Record and each two field picture is processed the beam characteristics hot spot parameter that obtains each pulse by special software after complete.This method is applicable to measure relatively high power laser instrument product, but detector response time is longer, reaches 10
5Magnitude is surveyed (such as 10ns) efficient to extreme pulse laser low, and real-time is relatively poor, and measuring accuracy is not high yet.
All there are certain limitation in present existing beam characteristics measuring method and device in application process, for example measuring accuracy is poor, test consuming time long, be only applicable to low-power semiconductor laser.
The utility model content
The purpose of this utility model is to overcome shortcoming of the prior art, a kind of simple and practical semiconductor laser beam characteristic test device is proposed, adopt this proving installation can access whole laser beam characteristic real-time curve, and describe intuitively the beam characteristics of laser instrument, thereby realize the measurement of the spatial beam characterisitic parameter of noise spectra of semiconductor lasers.
The purpose of this utility model is achieved through the following technical solutions:
The semiconductor laser beam characteristic test device comprises semicircle light beam receiving trap and rotary drive mechanism; The output terminal of semiconductor laser is positioned at the center of circle of this semicircle light beam receiving trap, and semicircle light beam receiving trap has a plurality of optical receivers towards semiconductor laser installing, and each optical receiver is connected to respectively micro detector; Take the optical axis of the output beam of semiconductor laser as turning axle, semicircle light beam receiving trap or semiconductor laser drive rotation by described rotary drive mechanism.
Above-mentioned a plurality of optical receiver evenly distributes, and the distance between the output terminal of each optical receiver and semiconductor laser equates.
Above-mentioned optical receiver can be the devices such as optical fiber, optical waveguide; Above-mentioned micro detector can adopt photodiode, photomultiplier etc.
The measuring accuracy of above-mentioned beam characteristics measurement mechanism is relevant with the number of optical receiver and micro detector.Optical receiver can receive the light beam that semiconductor laser sends in all angles, and with beam Propagation to described micro detector.The quantity of Miniature optical receiver and micro detector is larger, and test result is more accurate.
Adopt the first of above-mentioned proving installation to realize that the method for semiconductor laser beam characteristic test is as follows:
1) position of semiconductor laser keeps fixing, take the optical axis of the output beam of semiconductor laser as turning axle, rotate semicircle light beam receiving trap 180 degree, in rotary course, repeatedly measure, record the light intensity of each optical receiver on the semicircle light beam receiving trap, obtain all optical receivers corresponding to the light intensity data of different rotary angle;
2) data are carried out analyzing and processing, obtain to characterize the information (spatial light intensity distribution, the fast axle angle of divergence, the slow axis angle of divergence etc.) of semiconductor laser beam characteristic.
Adopt the first of above-mentioned proving installation to realize that the method for semiconductor laser beam characteristic test is as follows:
1) position of semicircle light beam receiving trap keeps fixing, take the optical axis of the output beam of semiconductor laser as turning axle, rotation semiconductor laser 180 degree, in rotary course, repeatedly measure, record the light intensity of each optical receiver on the semicircle light beam receiving trap, obtain all optical receivers corresponding to the light intensity data of different rotary angle;
2) data are carried out analyzing and processing, obtain to characterize the information (spatial light intensity distribution, the fast axle angle of divergence, the slow axis angle of divergence etc.) of semiconductor laser beam characteristic.
The utlity model has following beneficial effect:
1) the utility model can accurately be measured semiconductor laser at three-dimensional parameter of beam characteristics;
2) the utility model has adopted the mode of direct measurement, has higher precision and reliability;
3) the utility model can keep the absolute distance between laser instrument luminous point and the detector constant, the intensity signal at equidistant measurement laser instrument luminous point beam characteristics each point place in the process that laser power is surveyed.
4) device of the present utility model all has characteristics simple in structure, convenient to use.
Description of drawings
Fig. 1 is semiconductor laser beam characteristic test device schematic diagram of the present utility model.
Fig. 2 is the schematic diagram of using the first testing scheme of the present utility model.
Fig. 3 is the schematic diagram of using the second testing scheme of the present utility model.
Fig. 4 uses single-tube semiconductor laser that the utility model the first testing scheme surveys in the axial beam distribution of speed; Wherein, (a) for the fast axial light bundle distributes, (b) distribute for slow axis beam.
Fig. 5 uses single-tube semiconductor laser that the utility model the second testing scheme surveys in the axial beam distribution of speed; Wherein, (a) for the fast axial light bundle distributes, (b) distribute for slow axis beam.
The drawing reference numeral explanation: 1 is semiconductor laser, and 2 is semicircle light beam receiving trap, and 3 is the optical receiver in the semicircle light beam receiving trap, and 4 is the detector in the semicircle light beam receiving trap, and 5 is electric rotating machine.
Embodiment
Below in conjunction with accompanying drawing the utility model is done and to be described in further detail.
Use the utility model, following two kinds of testing schemes can be arranged:
The first testing scheme: laser instrument rotation, detector fixed form,, as shown in Figure 2:
1) semiconductor laser 1 is placed near semicircle light beam receiving trap 2 centers of circle;
2) semiconductor laser 1 is maintained static, by electric rotating machine 5 with semicircle light beam receiving trap 2 Rotate 180 degree;
3) whenever rotate to an angle and carry out one-shot measurement, record the light intensity of each optical receiver on the semicircle light beam receiving trap 2.
4) data are carried out analyzing and processing, obtain the information such as the semiconductor laser spatial light intensity distributes, the fast axle angle of divergence, the slow axis angle of divergence.
The second testing scheme: laser instrument is fixed, the detector rotation mode, as shown in Figure 3:
1) semiconductor laser 1 is placed near the semicircle light beam receiving trap center of circle;
2) fixing semicircle light beam receiving trap 2 is motionless, uses electric rotating machine 5 with semiconductor laser 1 Rotate 180 degree;
3) whenever rotate to an angle and carry out one-shot measurement, record the light intensity of each optical receiver on the semicircle light beam receiving trap 2.
4) data are carried out analyzing and processing, obtain the information such as semiconductor laser 1 spatial light intensity distributes, the fast axle angle of divergence, the slow axis angle of divergence.
Utilize the utility model the first testing scheme under electric current 1.8A, to measure single-tube semiconductor laser in the axial beam distribution of speed, as shown in Figure 4.Utilize the utility model the second testing scheme under electric current 1.8A, to measure single-tube semiconductor laser in the axial beam distribution of speed, as shown in Figure 5.Can find out, utilize device described in the utility model to obtain accurate semiconductor laser beam distribution results.
The first testing scheme described in the utility model and the second testing scheme are based on semicircle light beam receiving trap.But the utility model also can adopt 1/2n circle light beam receiving trap (n〉2), in the actual measurement process, need to rotate 1/2n circle light beam receiving trap, repeat foregoing the first and the second testing scheme n time, namely can obtain the result identical with semicircle light beam receiving trap.
In sum, semiconductor laser beam characteristic test device of the present utility model and corresponding method of testing have not only solved conventional beam characteristic test method shortcoming well, and physics realization is comparatively simple, cost is lower, and parameter of beam characteristics is described comprehensively, possesses good application prospect.
Claims (3)
1. the semiconductor laser beam characteristic test device comprises semicircle light beam receiving trap and rotary drive mechanism; The output terminal of semiconductor laser is positioned at the center of circle of this semicircle light beam receiving trap, and semicircle light beam receiving trap has a plurality of optical receivers towards semiconductor laser installing, and each optical receiver is connected to respectively micro detector; Take the optical axis of the output beam of semiconductor laser as turning axle, semicircle light beam receiving trap or semiconductor laser drive rotation by described rotary drive mechanism.
2. proving installation according to claim 1, it is characterized in that: described a plurality of optical receivers evenly distribute, and the distance between the output terminal of each optical receiver and semiconductor laser equates.
3. proving installation according to claim 1, it is characterized in that: described optical receiver is optical fiber or optical waveguide; Micro detector adopts photodiode or photomultiplier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220516599 CN202853880U (en) | 2012-10-10 | 2012-10-10 | Device for testing beam characteristics of semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220516599 CN202853880U (en) | 2012-10-10 | 2012-10-10 | Device for testing beam characteristics of semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202853880U true CN202853880U (en) | 2013-04-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220516599 Expired - Lifetime CN202853880U (en) | 2012-10-10 | 2012-10-10 | Device for testing beam characteristics of semiconductor laser |
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| Country | Link |
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| CN (1) | CN202853880U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102914420A (en) * | 2012-10-10 | 2013-02-06 | 西安炬光科技有限公司 | Semiconductor laser beam characteristic testing device and testing method |
-
2012
- 2012-10-10 CN CN 201220516599 patent/CN202853880U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102914420A (en) * | 2012-10-10 | 2013-02-06 | 西安炬光科技有限公司 | Semiconductor laser beam characteristic testing device and testing method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 710077 Xi'an hi tech Zone 56, Xi'an, Shaanxi Province, No. 56 Patentee after: Focuslight Technologies Inc. Address before: 710119 Third Floor, Building 10, 17 Information Avenue, New Industrial Park, Xi'an High-tech Zone, Shaanxi Province Patentee before: XI'AN FOCUSLIGHT TECHNOLOGIES Co.,Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130403 |