CN202796970U - Solar cell with selective emitter electrodes - Google Patents

Solar cell with selective emitter electrodes Download PDF

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Publication number
CN202796970U
CN202796970U CN 201220407037 CN201220407037U CN202796970U CN 202796970 U CN202796970 U CN 202796970U CN 201220407037 CN201220407037 CN 201220407037 CN 201220407037 U CN201220407037 U CN 201220407037U CN 202796970 U CN202796970 U CN 202796970U
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grid
grid line
thin
line area
region
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Expired - Lifetime
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CN 201220407037
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Chinese (zh)
Inventor
陈强利
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Trina Solar Co Ltd
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Changzhou Trina Solar Energy Co Ltd
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Abstract

The utility model relates to a solar cell with selective emitter electrodes. The light-receiving face of the cell is divided into a grid-line area and a non-grid-line area. The grid-line area is further divided into a thin grid-line area and a main grid-line area. Thin grid lines are made on the thin grid-line area. Main grid lines for converging the thin-grid-line currents are made on the main grid-line area. The thin grid-line area is a heavily doped area with a heavily doped layer. The main grid-line area and the non-grid-line area are lightly doped areas with lightly doped layers. The solar cell provided by the utility model has the beneficial effects of reducing the consumption of etching slurry or wax by up to 50% when the selective emitter electrodes are made; and increasing the efficiency by more than 0.02% as proved by the current experiments results.

Description

Solar cell with selective emitter
Technical field
The utility model relates to a kind of solar cell with selective emitter.
Background technology
The developing direction of solar cell is low-cost, high efficiency, and selective emitting electrode structure is to be hopeful to realize one of high efficiency method in the p-n junction crystal-silicon solar cell production technology.Selective emitting electrode structure has two features: 1) form highly doped under thin grid line and main grid line; 2) form low-doped in other zones.
One of purpose of selective emitter technology is to reduce series resistance, but also brings the compound increase adverse effect that heavily expands the district simultaneously, thereby causes electric current and open the reduction of pressure, and then affects efficient.
The utility model content
Technical problem to be solved in the utility model is: a kind of solar cell with selective emitter is provided, promotes open circuit voltage and the conversion efficiency of solar cell.
The technical scheme that its technical problem that solves the utility model adopts is: a kind of solar cell with selective emitter, the sensitive surface of battery is divided into grid region and non-grid region, grid region is divided into again thin grid region and main grid line zone, make thin grid line in thin grid region, make the main grid line that compiles thin grid line electric current in main grid line zone, thin grid region is the heavily doped region with heavily doped layer, and main grid line zone and non-grid region are the light doping section with lightly-doped layer.
Form the major part of series resistance in the thin grid region of sensitive surface electrode, so heavily spread the purpose that just can reach the reduction series resistance in thin grid region, but both can't well play the effect that reduces the string resistance in the diffusion of main grid line Regional Gravity And, and increased the etching slurry cost that forms heavy diffusion layer, do not reach the open circuit voltage of lifting solar cell and the purpose of conversion efficiency so do not weigh diffusion energy in main grid line zone.
The main grid line is vertical with thin grid line line, and thin grid line is parallel to each other each other, and the main grid line also is parallel to each other each other, and the radical of thin grid line is 65 ~ 85, thin grid line width 0.045 ~ 0.100mm, and the radical of main grid line is 1 ~ 3, main grid line width 1 ~ 2mm.
The beneficial effects of the utility model are: the consumption of etching slurry or wax when 1, having reduced the making selective emitter, and the range of decrease can reach 50%; 2, according at present experimental result demonstration, improved efficiency is more than 0.02%.
Description of drawings
Below in conjunction with drawings and Examples the utility model is further specified;
Fig. 1 is the structural representation of battery of the present utility model;
Fig. 2 is etching half tone figure of the present utility model;
Among the figure: 1. thin grid region, 2, main grid line zone, 3. mark line.
Embodiment
As shown in Figure 1, a kind of solar cell with selective emitter, the sensitive surface of battery is divided into grid region and non-grid region, grid region is divided into again thin grid region 1 and main grid line zone 2, make thin grid line in thin grid region 1,2 make the main grid line that compiles thin grid line electric current in main grid line zone, and thin grid region 1 is for having the heavily doped region of heavily doped layer, and main grid line zone 2 and non-grid region are the light doping section with lightly-doped layer.
The main grid line is vertical with thin grid line line, and thin grid line is parallel to each other each other, and the main grid line also is parallel to each other each other, and the radical of thin grid line is 65 ~ 85, thin grid line width 0.045 ~ 0.100mm, and the radical of main grid line is 1 ~ 3, main grid line width 1 ~ 2mm.
The electrical property experiment data of the solar cell of the heavy diffusion layer of this main grid line zone nothing and traditional solar cell with selective emitter, as shown in table 1
Figure BDA00002020747100031
Can find out that from the electrical property experiment data of table 1 its series resistance does not increase because removing the main grid that heavily expands, and presses and all to some extent liftings of efficient and open.
Take the present two kinds of selective solar battery products of Tianhe Optical Energy Co., Ltd., Changzhou as example, specify and realize that main grid line zone 2 is without the heavy method of diffusion
1, Quadmax solar battery product
The heavy diffusion layer forming process of Quadmax solar battery product is: the etching printing machine platform is by etching screen painting etching slurry, slots heavily spreading mask, then heavily spreads by fluting.So change etching half tone figure just can be realized only heavily spreading in thin grid region 1.Etching half tone figure such as Fig. 2 after the change have removed main grid figure wherein.
Lime light: asymmetric because of sensitive surface main grid line, an end is rectangle, and the other end is arrow, so for guaranteeing in the production process that the etching half tone aims at errorlessly with grid line, the etching half tone figure after change adds mark line 3, it is the non-direction of arrow that mark line 3 one sides are arranged.
2, S2 solar battery product
The heavy diffusion layer forming process of S2 solar battery product is: heavily diffusion, seal wax board are pressed wax spray figure wax spray to form etch mask, and the heavy diffusion region of protection when the positive etching in rear road is so change wax spray figure just can realize heavily expanding the change of figure.

Claims (2)

1. solar cell with selective emitter, the sensitive surface of battery is divided into grid region and non-grid region, grid region is divided into again thin grid region (1) and main grid line zone (2), make thin grid line in thin grid region (1), make the main grid line that compiles thin grid line electric current in main grid line zone (2), it is characterized in that: described thin grid region (1) is for having the heavily doped region of heavily doped layer, and described main grid line zone (2) and non-grid region are the light doping section with lightly-doped layer.
2. the solar cell with selective emitter according to claim 1, it is characterized in that: described main grid line is vertical with thin grid line line, thin grid line is parallel to each other each other, the main grid line also is parallel to each other each other, the radical of thin grid line is 65 ~ 85, thin grid line width 0.045 ~ 0.100mm, the radical of main grid line is 1 ~ 3, main grid line width 1 ~ 2mm.
CN 201220407037 2012-08-16 2012-08-16 Solar cell with selective emitter electrodes Expired - Lifetime CN202796970U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201220407037 CN202796970U (en) 2012-08-16 2012-08-16 Solar cell with selective emitter electrodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201220407037 CN202796970U (en) 2012-08-16 2012-08-16 Solar cell with selective emitter electrodes

Publications (1)

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CN202796970U true CN202796970U (en) 2013-03-13

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103219430A (en) * 2013-05-06 2013-07-24 天威新能源控股有限公司 Method for preparing SE (Selective Emitter) solar cell by utilizing sectional type mask graph

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103219430A (en) * 2013-05-06 2013-07-24 天威新能源控股有限公司 Method for preparing SE (Selective Emitter) solar cell by utilizing sectional type mask graph
CN103219430B (en) * 2013-05-06 2015-09-23 天威新能源控股有限公司 A kind of segmented mask pattern prepares SE battery methods

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C14 Grant of patent or utility model
GR01 Patent grant
CP01 Change in the name or title of a patent holder

Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou

Patentee after: trina solar Ltd.

Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou

Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd.

Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou

Patentee after: TRINASOLAR Co.,Ltd.

Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou

Patentee before: trina solar Ltd.

CP01 Change in the name or title of a patent holder
CX01 Expiry of patent term

Granted publication date: 20130313

CX01 Expiry of patent term