CN204577446U - A kind of passivating back mould notching construction carrying on the back passivation solar cell - Google Patents
A kind of passivating back mould notching construction carrying on the back passivation solar cell Download PDFInfo
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- CN204577446U CN204577446U CN201520124278.XU CN201520124278U CN204577446U CN 204577446 U CN204577446 U CN 204577446U CN 201520124278 U CN201520124278 U CN 201520124278U CN 204577446 U CN204577446 U CN 204577446U
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- Prior art keywords
- passivating
- notching construction
- back mould
- rectangular channel
- construction according
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- 238000010276 construction Methods 0.000 title claims abstract description 18
- 238000002161 passivation Methods 0.000 title claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 239000011159 matrix material Substances 0.000 claims abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009795 derivation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a kind of passivating back mould notching construction carrying on the back passivation solar cell, comprise, be arranged at the passivating film on silicon chip matrix and be opened in several grooves on passivating film, it is characterized in that: described groove comprises some level troughs (1) of be arrangeding in parallel and frame and is located at shaped as frame groove (2) outside those level troughs.As preferably, in the scope that described shaped as frame groove surrounds, also offer some rectangular channels (3), the length direction of described rectangular channel is vertical with the length direction of level trough.The passivating back mould notching construction of back of the body passivation solar cell of the present utility model had both effectively reduced the series resistance of back of the body passivation cell, maintains open circuit voltage again simultaneously, short circuit current is unaffected, effectively improves the efficiency of battery.
Description
Technical field
The utility model relates to a kind of back of the body passivation solar cell, particularly relates to the passivating back mould notching construction of a kind of solar energy back of the body passivation cell.
Background technology
For improving the electricity conversion of solar cell, current solar cell is by adopting the mode of chemical deposition to form one deck passivating film overleaf overleaf, and passivating film effectively can improve the long-wave response of battery, reduces back side recombination rate.Meanwhile, in order to make rear surface of solar cell form certain electrical contact, usually by laser ablation local passivating film, making between back pastes and cell piece, to form good contact, being conducive to the derivation of electric current, collection.
But back of the body passivation cell is that aluminium paste contacts with passivating film because of back side unslotted part, and cause aluminium paste to contact with passivating film poor, the series resistance of battery is higher, is unfavorable for the lifting of efficiency.By means of only increase lbg area, although effectively can reduce series resistance, open circuit voltage and short circuit current have certain loss.Need the passivating back mould notching construction designing a kind of back of the body passivation solar cell newly, effectively can reduce series resistance, can open circuit voltage be maintained again simultaneously, short circuit current is unaffected.
Summary of the invention
The utility model is in prior art, high, the inefficient technical problem of cell series resistance of the passivating back mould notching construction existence of back of the body passivation solar cell, there is provided one effectively can reduce series resistance, the passivating back mould notching construction of open circuit voltage, short circuit current impregnable back of the body passivation solar cell can be maintained again simultaneously.For this reason, the utility model adopts following technical scheme:
A kind of passivating back mould notching construction carrying on the back passivation solar cell, comprise, be arranged at the passivating film on silicon chip matrix and be opened in several grooves on passivating film, it is characterized in that: described groove comprises some level troughs of be arrangeding in parallel and frame and is located at shaped as frame groove outside those level troughs.Utilize the distribution trend low in the middle of cell piece sheet resistance, edge is high, on the basis of existing level groove, increase a shaped as frame groove, the series resistance of cell piece fringe region can be reduced.
Further, described shaped as frame groove is width is 0.3-0.5mm, the length of side is 145-160mm rectangle frame or square box.Reduce the series resistance of cell piece fringe region.
Further, in the scope that described shaped as frame groove surrounds, also offer some rectangular channels, the length direction of described rectangular channel is vertical with the length direction of level trough.Increase open circuit voltage, reduce series resistance.
Further, described rectangular channel is provided with ordered series of numbers abreast.Be applicable to the cell piece that backplane quantity is greater than 1, in order to increase open circuit voltage, to reduce series resistance.
Further, each row rectangular channel described is arranged in continuity ground.Be applicable to the cell piece of backplane not segmentation, in order to increase open circuit voltage, to reduce series resistance.
Further, each row rectangular channel described is that piecewise is arranged.Be applicable to the cell piece of backplane segmentation, in order to increase open circuit voltage, to reduce series resistance.
Further, the 40-50% local hollow out of described rectangular channel fluting ratio.Film is opened completely, to increase the adhesiveness of slurry and silicon chip matrix at backplane and back surface field contact area laser.
Further, the spacing between adjacent level groove is 1mm.Be beneficial to the derivation of electric current, collection.
The utility model compared with prior art, has following beneficial effect:
1. cell backside aluminium paste contacts with silicon chip and improves, and series resistance reduces 0.4-0.6m Ω, and fill factor, curve factor increases by 0.5, and photoelectric conversion efficiency improves 0.1-0.2%.Both effectively reduced the series resistance of back of the body passivation cell, and maintained open circuit voltage again simultaneously, short circuit current is unaffected, effectively improves the efficiency of battery.
2. effectively improve the adhesiveness of backplane and back surface field contact area and silicon chip matrix, improve on the one hand and to come off problem because passivating film exists the back surface field caused, the good contact of another aspect is conducive to the formation of the heavily doped P+ layer in the back side.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model embodiment 1;
Fig. 2 is the A portion enlarged drawing of Fig. 1;
Fig. 3 is the structural representation of the utility model embodiment 2;
Fig. 4 is the B portion enlarged drawing of Fig. 3.
Embodiment
Be further described in detail structure of the present utility model below in conjunction with the drawings and specific embodiments, part same as the prior art in the utility model is with reference to prior art.
Embodiment 1:
As shown in Figure 1-2, the passivating back mould notching construction of back of the body passivation solar cell of the present utility model, comprise, be arranged at the passivating film on silicon chip matrix and be opened in several grooves on passivating film, described groove comprises the some level troughs 1 be arranged in parallel, spacing between adjacent level groove 1 is 1mm, is outside equipped with a shaped as frame groove 2 at those level troughs 1.In the present embodiment, shaped as frame groove 2 is width is 0.3-0.5mm, the length of side is the square box of 154mm.In the scope that described shaped as frame groove 2 surrounds, also offer some rectangular channels 3, the length direction of rectangular channel 3 is vertical with the length direction of level trough 1.Rectangular channel 3 has three row be arranged in parallel.Each row rectangular channel 3 continues ground along its length and arranges.Rectangular channel 3 slot ratio 40-50% local hollow out, as shown in Figure 2.
Embodiment 2:
As shown in Figure 3-4, the difference of the present embodiment and embodiment 1 is: each row rectangular channel 3 is arranged in piecewise.
Certainly, the utility model also has other execution modes, is only preferred embodiment of the present utility model above, is not used for limiting practical range of the present utility model, all equivalences done according to the content of the application's the scope of the claims change and modify, and all should be technology category of the present utility model.
Claims (8)
1. carry on the back the passivating back mould notching construction of passivation solar cell for one kind, comprise, be arranged at the passivating film on silicon chip matrix and be opened in several grooves on passivating film, it is characterized in that: described groove comprises some level troughs (1) of be arrangeding in parallel and frame and is located at shaped as frame groove (2) outside those level troughs.
2. passivating back mould notching construction according to claim 1, is characterized in that: described shaped as frame groove (2) is width is 0.3-0.5mm, the length of side is 145-160mm rectangle frame or square box.
3. passivating back mould notching construction according to claim 1, is characterized in that: in the scope that described shaped as frame groove surrounds, also offer some rectangular channels (3), the length direction of described rectangular channel is vertical with the length direction of level trough.
4. passivating back mould notching construction according to claim 3, is characterized in that: described rectangular channel (3) is provided with ordered series of numbers abreast.
5. passivating back mould notching construction according to claim 3, is characterized in that: each row rectangular channel (3) described is arranged in continuity ground.
6. passivating back mould notching construction according to claim 3, is characterized in that: each row rectangular channel (3) described is arranged in piecewise.
7. passivating back mould notching construction according to claim 3, is characterized in that: the 40-50% local hollow out of described rectangular channel (3) fluting ratio.
8. passivating back mould notching construction according to claim 1, is characterized in that: the spacing between adjacent level groove (1) is 1mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520124278.XU CN204577446U (en) | 2015-03-04 | 2015-03-04 | A kind of passivating back mould notching construction carrying on the back passivation solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520124278.XU CN204577446U (en) | 2015-03-04 | 2015-03-04 | A kind of passivating back mould notching construction carrying on the back passivation solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204577446U true CN204577446U (en) | 2015-08-19 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520124278.XU Active CN204577446U (en) | 2015-03-04 | 2015-03-04 | A kind of passivating back mould notching construction carrying on the back passivation solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204577446U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108520902A (en) * | 2018-06-07 | 2018-09-11 | 通威太阳能（安徽）有限公司 | A kind of Al-BSF structure improving p-type monocrystalline double-sided solar battery transfer efficiency |
-
2015
- 2015-03-04 CN CN201520124278.XU patent/CN204577446U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108520902A (en) * | 2018-06-07 | 2018-09-11 | 通威太阳能（安徽）有限公司 | A kind of Al-BSF structure improving p-type monocrystalline double-sided solar battery transfer efficiency |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINASOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. |
|
| CP01 | Change in the name or title of a patent holder | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220815 Address after: 213031 Tianhe PV Industrial Park No. 2, Xinbei District, Changzhou, Jiangsu Patentee after: TRINASOLAR Co.,Ltd. Patentee after: Trinasolar Technology (Yancheng) Co.,Ltd. Address before: 213031 Tianhe PV Industrial Park No. 2, Xinbei District, Changzhou, Jiangsu Patentee before: TRINASOLAR Co.,Ltd. |
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| TR01 | Transfer of patent right |