CN202786499U - High temperature furnace suitable for growing titanium-doped sapphire crystal through kyropoulos method - Google Patents
High temperature furnace suitable for growing titanium-doped sapphire crystal through kyropoulos method Download PDFInfo
- Publication number
- CN202786499U CN202786499U CN 201220334361 CN201220334361U CN202786499U CN 202786499 U CN202786499 U CN 202786499U CN 201220334361 CN201220334361 CN 201220334361 CN 201220334361 U CN201220334361 U CN 201220334361U CN 202786499 U CN202786499 U CN 202786499U
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- high temperature
- crucible
- furnace
- sapphire crystal
- arranged outside
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Abstract
The utility model relates to a high temperature furnace suitable for growing a titanium-doped sapphire crystal through a kyropoulos method. The high temperature furnace comprises a furnace wall and a furnace cover, wherein the furnace wall and the furnace cover are provided with temperature measuring ports, the furnace cover is provided with a seed rod, the lower end of the seed rod is connected with a seed crystal, and the furnace wall is internally provided with a crucible; and the high temperature furnace is characterized in that the crucible is placed on a bracket, a cage-shaped heating body is arranged outside the crucible, a reflection shield is arranged outside the heating body, and an insulating layer is arranged outside the reflection shield. The high temperature furnace suitable for growing the titanium-doped sapphire crystal through the kyropoulos method provided by the utility model has the advantages that the bracket is placed on the crucible, the cage-shaped heating body is arranged outside the crucible, and the reflection shield is arranged outside the heating body. Therefore, the high temperature furnace provided by the utility model has the characteristics of high furnace temperature control accuracy and good heat-insulating property.
Description
Technical field
The utility model relates to a kind of High Temperature Furnaces Heating Apparatus that is applicable to kyropoulos growth ti sapphire crystal.
Background technology
The high temperature furnace temperature control of kyropoulos growth ti sapphire crystal requires high, good heat insulating, and the High Temperature Furnaces Heating Apparatus of prior art can't satisfy the requirement of kyropoulos growth ti sapphire crystal.
The utility model content
The purpose of this utility model is to propose a kind of High Temperature Furnaces Heating Apparatus that is applicable to kyropoulos growth ti sapphire crystal.
The technical solution adopted in the utility model is: a kind of High Temperature Furnaces Heating Apparatus that is applicable to kyropoulos growth ti sapphire crystal of the present utility model, it comprises furnace wall and bell, on furnace wall and the bell temperature-measuring port is arranged, seed rod is set on the bell, and the lower end of seed rod connects seed crystal, and crucible is arranged in the furnace wall, it is characterized in that above-mentioned crucible is placed on the carriage, crucible is outward the heating member that is the cage shape, and heating member is outside equipped with radiation shield, and radiation shield is outward thermal insulation layer.
A kind of High Temperature Furnaces Heating Apparatus that is applicable to kyropoulos growth ti sapphire crystal of the present utility model, because crucible is placed on the carriage, crucible is outward the heating member that is the cage shape, heating member is outside equipped with radiation shield.Therefore, the utlity model has the characteristics of Control for Kiln Temperature precision height, good heat insulating.
Description of drawings
Fig. 1 is the High Temperature Furnaces Heating Apparatus structural representation that is applicable to kyropoulos growth ti sapphire crystal of the present utility model.
Embodiment
The utility model is described in further detail by embodiment below in conjunction with accompanying drawing:
As shown in Figure 1, a kind of High Temperature Furnaces Heating Apparatus that is applicable to kyropoulos growth ti sapphire crystal of the present utility model, it comprises furnace wall 2 and bell 8, on furnace wall 2 and the bell 8 temperature-measuring port 1 is arranged, and seed rod 7 is set on the bell 8, the lower end of seed rod 7 connects seed crystal 6, crucible 9 being arranged in the furnace wall 2, it is characterized in that above-mentioned crucible 9 is placed on the carriage 10, is the heating member 5 that is the cage shape outside the crucible 9, heating member 5 is outside equipped with radiation shield 4, is thermal insulation layer 3 outside the radiation shield 4.
Claims (1)
1. High Temperature Furnaces Heating Apparatus that is applicable to kyropoulos growth ti sapphire crystal, it comprises furnace wall (2) and bell (8), on furnace wall (2) and the bell (8) temperature-measuring port (1) is arranged, seed rod (7) is set on the bell (8), the lower end of seed rod (7) connects seed crystal (6), crucible (9) is arranged in the furnace wall (2), it is characterized in that above-mentioned crucible (9) is placed on the carriage (10), crucible (9) is outer to be the heating member (5) that is the cage shape, heating member (5) is outside equipped with radiation shield (4), and radiation shield (4) is outer to be thermal insulation layer (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220334361 CN202786499U (en) | 2012-07-11 | 2012-07-11 | High temperature furnace suitable for growing titanium-doped sapphire crystal through kyropoulos method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220334361 CN202786499U (en) | 2012-07-11 | 2012-07-11 | High temperature furnace suitable for growing titanium-doped sapphire crystal through kyropoulos method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202786499U true CN202786499U (en) | 2013-03-13 |
Family
ID=47813795
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220334361 Expired - Fee Related CN202786499U (en) | 2012-07-11 | 2012-07-11 | High temperature furnace suitable for growing titanium-doped sapphire crystal through kyropoulos method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202786499U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103469298A (en) * | 2013-08-22 | 2013-12-25 | 昆山开威电子有限公司 | Growth method of cerium-doped yttrium aluminium garnet single crystal by adopting kyropoulos method and high-temperature furnace |
-
2012
- 2012-07-11 CN CN 201220334361 patent/CN202786499U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103469298A (en) * | 2013-08-22 | 2013-12-25 | 昆山开威电子有限公司 | Growth method of cerium-doped yttrium aluminium garnet single crystal by adopting kyropoulos method and high-temperature furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130313 Termination date: 20150711 |
|
| EXPY | Termination of patent right or utility model |