CN202772185U - Light-emitting diode element based on sapphire substrate - Google Patents

Light-emitting diode element based on sapphire substrate Download PDF

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Publication number
CN202772185U
CN202772185U CN 201220475871 CN201220475871U CN202772185U CN 202772185 U CN202772185 U CN 202772185U CN 201220475871 CN201220475871 CN 201220475871 CN 201220475871 U CN201220475871 U CN 201220475871U CN 202772185 U CN202772185 U CN 202772185U
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CN
China
Prior art keywords
sapphire substrate
light
emitting diode
sapphire
utility
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 201220475871
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Chinese (zh)
Inventor
徐广忠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TAIZHOU PUJI PHOTOELECTRIC CO Ltd
Original Assignee
TAIZHOU PUJI PHOTOELECTRIC CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by TAIZHOU PUJI PHOTOELECTRIC CO Ltd filed Critical TAIZHOU PUJI PHOTOELECTRIC CO Ltd
Priority to CN 201220475871 priority Critical patent/CN202772185U/en
Application granted granted Critical
Publication of CN202772185U publication Critical patent/CN202772185U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

The utility model is suitable for the technical field of photoelectric element and provides a light-emitting diode element based on sapphire substrate. The light-emitting diode element is provided with a vertical cylindrical sapphire substrate, the sapphire substrate is formed by a sapphire base slice, a silver coating layer is arranged on the sapphire substrate, and two metal electrodes are arranged on the upper surface of the sapphire substrate and connected with an electrode of an LED chip by welding. The light-emitting diode element based on sapphire substrate is formed by the sapphire substrate and the LED chip, the structure is simple and the lighting brightness of an LED semiconductor using the element is improved.

Description

A kind of light-emitting diode based on sapphire substrate
Technical field
The utility model belongs to the photoelectric cell technical field, relates in particular to a kind of light-emitting diode based on sapphire substrate.
Background technology
LED be a kind of can be the semiconductor of luminous energy with electric energy conversion, it has changed the principle that the incandescent lamp tungsten filament is luminous and the electricity-saving lamp tricolor powder is luminous, and adopts electroluminescence.According to one's analysis, the characteristics of LED are very obvious, long, the high and low radiation of light efficiency of life-span and low-power consumption.The spectrum of white light LEDs almost all concentrates on visible light frequency band, and its luminous efficiency can surpass 150lm/W.
But the luminous efficiency of LED is common not high at present, and electric energy has been caused waste.
The utility model content
The purpose of this utility model is to provide a kind of light-emitting diode based on sapphire substrate, and it is common not high to be intended to solve in the prior art luminous efficiency of LED, electric energy has been caused the problem of waste.
The utility model is to realize like this, a kind of light-emitting diode based on sapphire substrate, described light-emitting diode based on sapphire substrate is provided with a vertical cylindrical sapphire substrates, described sapphire substrates is comprised of sapphire substrate, described sapphire substrates is provided with silver coating, the upper surface of described sapphire substrates is provided with two metal electrodes, and described metal electrode connects the electrode of led chip by the mode of welding.
The light-emitting diode based on sapphire substrate that the utility model provides is comprised of sapphire substrates and led chip, and is simple in structure, improved the semi-conductive brightness of illumination of the LED that uses this element.
Description of drawings
Fig. 1 is the structural representation based on the light-emitting diode of sapphire substrate that the utility model provides.
Embodiment
In order to make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein only in order to explaining the present invention, and be not used in restriction the utility model.
The structural representation based on the light-emitting diode of sapphire substrate that Fig. 1 shows that the utility model provides for convenience of explanation, has only provided the part relevant with the utility model among the figure.
The light-emitting diode based on sapphire substrate that the utility model provides is provided with a vertical cylindrical sapphire substrates 1, described sapphire substrates 1 is comprised of sapphire substrate, described sapphire substrates 1 is provided with silver coating 2, the upper surface of described sapphire substrates 1 is provided with two metal electrodes 12, and described metal electrode 12 connects the electrode 31 of led chip 3 by the mode of welding.
The light-emitting diode based on sapphire substrate that the utility model provides is comprised of sapphire substrates and led chip, and is simple in structure, improved the semi-conductive brightness of illumination of the LED that uses this element.
The above only is preferred embodiment of the present utility model; not in order to limit the utility model; all any modifications of within spirit of the present utility model and principle, doing, be equal to and replace and improvement etc., all should be included within the protection range of the present utility model.

Claims (1)

1. light-emitting diode based on sapphire substrate, it is characterized in that, described light-emitting diode based on sapphire substrate is provided with a vertical cylindrical sapphire substrates, described sapphire substrates is comprised of sapphire substrate, described sapphire substrates is provided with silver coating, the upper surface of described sapphire substrates is provided with two metal electrodes, and described metal electrode connects the electrode of led chip by the mode of welding.
CN 201220475871 2012-09-18 2012-09-18 Light-emitting diode element based on sapphire substrate Expired - Fee Related CN202772185U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201220475871 CN202772185U (en) 2012-09-18 2012-09-18 Light-emitting diode element based on sapphire substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201220475871 CN202772185U (en) 2012-09-18 2012-09-18 Light-emitting diode element based on sapphire substrate

Publications (1)

Publication Number Publication Date
CN202772185U true CN202772185U (en) 2013-03-06

Family

ID=47778735

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201220475871 Expired - Fee Related CN202772185U (en) 2012-09-18 2012-09-18 Light-emitting diode element based on sapphire substrate

Country Status (1)

Country Link
CN (1) CN202772185U (en)

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130306

Termination date: 20130918