CN102891228A - Light emitting diode element based on sapphire substrate - Google Patents
Light emitting diode element based on sapphire substrate Download PDFInfo
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- CN102891228A CN102891228A CN 201210346099 CN201210346099A CN102891228A CN 102891228 A CN102891228 A CN 102891228A CN 201210346099 CN201210346099 CN 201210346099 CN 201210346099 A CN201210346099 A CN 201210346099A CN 102891228 A CN102891228 A CN 102891228A
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- emitting diode
- sapphire substrate
- sapphire
- light emitting
- light
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Abstract
The invention is applicable to the technical field of a photoelectric element and provides a light emitting diode element based on a sapphire substrate. A vertical cylinder sapphire base is arranged on the light emitting diode element based on the sapphire substrate; the sapphire base is composed of the sapphire substrate; a silver coating is arranged on the sapphire base; two metal electrodes are arranged on the upper surface of the sapphire base, and the metal electrode is connected to the electrode of an LED (light-emitting diode) chip in a welding mode. The light emitting diode element based on the sapphire substrate provided by the invention is composed of the sapphire base and the LED chip and is simple in structure, and the illuminating brightness of an LED semiconductor using the element is improved.
Description
Technical field
The invention belongs to the photoelectric cell technical field, relate in particular to a kind of light-emitting diode based on sapphire substrate.
Background technology
LED be a kind of can be the semiconductor of luminous energy with electric energy conversion, it has changed the principle that the incandescent lamp tungsten filament is luminous and the electricity-saving lamp tricolor powder is luminous, and adopts electroluminescence.According to one's analysis, the characteristics of LED are very obvious, long, the high and low radiation of light efficiency of life-span and low-power consumption.The spectrum of white light LEDs almost all concentrates on visible light frequency band, and its luminous efficiency can surpass 150lm/W.
But the luminous efficiency of LED is common not high at present, and electric energy has been caused waste.
Summary of the invention
The object of the present invention is to provide a kind of light-emitting diode based on sapphire substrate, be intended to solve in the prior art luminous efficiency of LED common not high, electric energy has been caused the problem of waste.
The present invention realizes like this, a kind of light-emitting diode based on sapphire substrate, described light-emitting diode based on sapphire substrate is provided with a vertical cylindrical sapphire substrates, described sapphire substrates is comprised of sapphire substrate, described sapphire substrates is provided with silver coating, the upper surface of described sapphire substrates is provided with two metal electrodes, and described metal electrode connects the electrode of led chip by the mode of welding.
Light-emitting diode based on sapphire substrate provided by the invention is comprised of sapphire substrates and led chip, and is simple in structure, improved the semi-conductive brightness of illumination of the LED that uses this element.
Description of drawings
Fig. 1 is the structural representation of the light-emitting diode based on sapphire substrate provided by the invention.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, is not intended to limit the present invention.
Fig. 1 shows the structural representation of the light-emitting diode based on sapphire substrate provided by the invention, for convenience of explanation, has only provided part related to the present invention among the figure.
Light-emitting diode based on sapphire substrate provided by the invention is provided with a vertical cylindrical sapphire substrates 1, described sapphire substrates 1 is comprised of sapphire substrate, described sapphire substrates 1 is provided with silver coating 2, the upper surface of described sapphire substrates 1 is provided with two metal electrodes 12, and described metal electrode 12 connects the electrode 31 of led chip 3 by the mode of welding.
Light-emitting diode based on sapphire substrate provided by the invention is comprised of sapphire substrates and led chip, and is simple in structure, improved the semi-conductive brightness of illumination of the LED that uses this element.
The above only is preferred embodiment of the present invention, not in order to limiting the present invention, all any modifications of doing within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (1)
1. light-emitting diode based on sapphire substrate, it is characterized in that, described light-emitting diode based on sapphire substrate is provided with a vertical cylindrical sapphire substrates, described sapphire substrates is comprised of sapphire substrate, described sapphire substrates is provided with silver coating, the upper surface of described sapphire substrates is provided with two metal electrodes, and described metal electrode connects the electrode of led chip by the mode of welding.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201210346099 CN102891228A (en) | 2012-09-18 | 2012-09-18 | Light emitting diode element based on sapphire substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201210346099 CN102891228A (en) | 2012-09-18 | 2012-09-18 | Light emitting diode element based on sapphire substrate |
Publications (1)
Publication Number | Publication Date |
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CN102891228A true CN102891228A (en) | 2013-01-23 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN 201210346099 Pending CN102891228A (en) | 2012-09-18 | 2012-09-18 | Light emitting diode element based on sapphire substrate |
Country Status (1)
Country | Link |
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CN (1) | CN102891228A (en) |
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2012
- 2012-09-18 CN CN 201210346099 patent/CN102891228A/en active Pending
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130123 |