CN202772139U - Radio frequency-laterally diffused metal oxide semiconductor (RF-LDMOS) device capable of regulating breakdown voltage - Google Patents
Radio frequency-laterally diffused metal oxide semiconductor (RF-LDMOS) device capable of regulating breakdown voltage Download PDFInfo
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- CN202772139U CN202772139U CN2012203522705U CN201220352270U CN202772139U CN 202772139 U CN202772139 U CN 202772139U CN 2012203522705 U CN2012203522705 U CN 2012203522705U CN 201220352270 U CN201220352270 U CN 201220352270U CN 202772139 U CN202772139 U CN 202772139U
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- field plate
- ldmos
- voltage
- drift region
- breakdown voltage
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- 230000001105 regulatory effect Effects 0.000 title claims abstract description 9
- 229910044991 metal oxide Inorganic materials 0.000 title abstract description 3
- 150000004706 metal oxides Chemical class 0.000 title abstract description 3
- 239000004065 semiconductor Substances 0.000 title abstract description 3
- 230000015556 catabolic process Effects 0.000 title abstract 7
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 230000004888 barrier function Effects 0.000 claims description 9
- 230000007704 transition Effects 0.000 claims description 2
- 239000002184 metal Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 108010063955 thrombin receptor peptide (42-47) Proteins 0.000 description 2
- ALKWEXBKAHPJAQ-NAKRPEOUSA-N Asn-Leu-Asp-Asp Chemical compound NC(=O)C[C@H](N)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CC(O)=O)C(=O)N[C@@H](CC(O)=O)C(O)=O ALKWEXBKAHPJAQ-NAKRPEOUSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Abstract
The utility model discloses a radio frequency-laterally diffused metal oxide semiconductor (RF-LDMOS) component capable of regulating breakdown voltage, which comprises a substrate, wherein a source and a drain are arranged on the substrate; the source and the drain are mutually connected through a channel; a grid is arranged on the channel; an oxide layer is arranged between the grid and the channel, and the drain comprises a drift region; the RF-LDMOS device capable of regulating breakdown voltage is characterized in that: at least one field plate is arranged on the drift region; an insulating layer is arranged between the field plate and the drift region; the field plate and the source are mutually insulated; and the voltage of the field plate can be regulated. According to the RF-LDMOS device capable of regulating breakdown voltage, by regulating the voltage on the field plate, the breakdown voltage can be dynamically regulated depending on the required working frequency; the breakdown voltage of the device can be raised when the device works at a lower frequency and a higher output frequency is required; and the breakdown voltage of the device can be reduced when the device works at a higher frequency and increase of a cut-off frequency is required to guarantee sufficient gain.
Description
Technical field
The utility model belongs to electronic technology field, is specifically related to a kind of puncture voltage and can adjusts the RF-LDMOS device.
Background technology
LDMOS (Laterally Diffused Metal Oxide Semiconductor) device is compared with transistor, aspect the device property of key, such as gain, the linearity, switch performance, heat dispersion and reduce the aspect advantage such as progression clearly, so it is widely used in the power amplifier of radio frequency, microwave regime.Cut-off frequency (the f of RF-LDMOS puncture voltage and RF-LDMOS
T) be a trade-off relation, high puncture voltage is to reduce the f of RF-LDMOS
TFor cost, and low puncture voltage can improve the f of RF-LDMOS
TIn order to allow the higher power of RF-LDMOS output, the voltage of drain terminal all is fixed on 28 volts usually.High puncture voltage has reduced the frequency of RF-LDMOS work, and the operating frequency of RF-LDMOS is generally all less than 3GHz now.The user wishes that RF-LDMOS can be operated in one section very wide frequency range simultaneously, can be operated in lower operating frequency and higher operating frequency simultaneously sometimes.But, do not wish again in order to improve the cut-off frequency of RF-LDMOS, and the puncture voltage of infringement RF-LDMOS under low operating frequency, thereby power output reduced.Therefore, the puncture voltage that how to allow the RF-LDMOS device can automatically change according to the frequency of RF-LDMOS work it is problem demanding prompt solution.
The utility model content
The utility model provides a kind of solution of the above problems, provide a kind of operating frequency wide, and puncture voltage can be adjusted the RF-LDMOS device.
The technical solution of the utility model provides a puncture voltage can adjust the RF-LDMOS device, it comprises substrate, be provided with source electrode and drain electrode on the described substrate, link together by raceway groove between described source electrode and the drain electrode, be provided with grid on the described raceway groove, be provided with oxide layer between described grid and the described raceway groove, described drain electrode comprises the drift region, it is characterized in that: be provided with at least one field plate on the described drift region, be provided with insulating barrier between described field plate and the described drift region, insulate between described field plate and the described source electrode, the voltage of described field plate can be regulated.
Preferably, a described field plate is set on the described drift region, described insulating barrier is thick near the thickness of described source electrode one side part away from the Thickness Ratio of described source electrode one side part, is provided with the arc-shaped transition district between two parts.
Preferably, be provided with two described field plates on the described drift region, do not connect mutually between two described field plates, and voltage separate regulation separately.
Preferably, be provided with three described field plates on the described drift region, do not connect mutually between three described field plates, and voltage separate regulation separately.
Preferably, described substrate is the SOI substrate, SOI(Silicon-On-Insulator, the silicon on the dielectric substrate) substrate is to have introduced one deck between at the bottom of top layer silicon and the backing to bury oxide layer.
A puncture voltage of the present utility model can be adjusted the RF-LDMOS device by the voltage on the adjusting field plate, thereby the realization puncture voltage can be adjusted dynamically according to the frequency of required work.When device is operated in lower frequency, when larger power output need to be provided, can improve the puncture voltage of device.When device is operated in higher frequency, when needing the raising cut-off frequency to guarantee enough gains, can reduce the puncture voltage of device.
Description of drawings
Fig. 1 is the cross-sectional view that a puncture voltage of the utility model the first most preferred embodiment can be adjusted the RF-LDMOS device;
Fig. 2 is the cross-sectional view that a puncture voltage of the utility model the second most preferred embodiment can be adjusted the RF-LDMOS device;
Fig. 3 is the cross-sectional view that a puncture voltage of the utility model the 3rd most preferred embodiment can be adjusted the RF-LDMOS device;
Fig. 4 is the cross-sectional view that a puncture voltage of the utility model the 4th most preferred embodiment can be adjusted the RF-LDMOS device;
Fig. 5 be a puncture voltage of the utility model the 4th most preferred embodiment can adjust the RF-LDMOS device the second structure;
Fig. 6 is a kind of structural representation that a puncture voltage of the present utility model can be adjusted the RF-LDMOS device package;
Fig. 7 is the second structural representation that a puncture voltage of the present utility model can be adjusted the RF-LDMOS device package;
Fig. 8 is the fundamental diagram that a puncture voltage of the present utility model can be adjusted the RF-LDMOS device.
Embodiment
The below is described in further detail embodiment of the present utility model as an example of N-type RFLDMOS example, for P type RFLDMOS, in like manner can get.
As shown in Figure 1, a kind of puncture voltage of the present utility model can be adjusted the RF-LDMOS device and comprise substrate 1, and it is the SOI substrate, can be P type substrate, also can be the P type epitaxial loayer above the substrate, also can be a P-Well.Source class comprises P type heavy doping 2, N-type heavy doping 3, be used for preventing the punch through (punch-through) in the Punch-Through(transistor) and P-Body4 and the Metal Contact electrode 8 of the threshold voltage of adjusting RF-LDMOS; Source class is ground connection normally.Drain electrode comprises N-drift region 5, N trap 6, N-type heavy doping 7 and Metal Contact electrode 9; N trap 6 is used for reducing conducting resistance.Zone between source electrode and the drain electrode is raceway groove, and the raceway groove top is the oxide layer 13 of grid 12 and grid 12, and oxide layer 13 is silicon dioxide normally.The top of N-drift region 5 is provided with insulating barrier 10 and field plate 11.Insulating barrier 10 also is silicon dioxide usually.
Traditional structure, field plate 11 all are to be connected together with Metal Contact electrode 8, are fixing current potentials.And structure corresponding to the utility model, the voltage of its field plate 11 is also can be adaptive by external world control.To add forward voltage higher when field plate 11, with respect to source class, can attract electron accumulation on the surface of raceway groove, reduced like this depletion layer of raceway groove, therefore reduced puncture voltage.But can reduce like this series resistance of bringing because of N-drift region 5 of device, reduce conducting resistance, improve simultaneously the cut-off frequency that device can be worked.When field plate 11 added reverse voltages are higher, with respect to source class, so more hole attracted to the surface of raceway groove, has strengthened like this depletion layer of raceway groove, therefore can improve puncture voltage.Simultaneously increase like this series resistance that NLDD brings, increased conducting resistance, reduced simultaneously the cut-off frequency of device.Its operation principle can be as shown in Figure 8, for the LDMOS device of the present utility model of individual layer field plate, can regard as by two transistor M1 and M2 and form the grid level of the voltage-controlled transistor M2 of field plate.The voltage of field plate can be by external world's control, also can be the function of ldmos transistor grid step voltage V1 and drain voltage V2.When the voltage of ldmos transistor V1 was very high, this time, V2 was usually very low, and this time, pipe did not need too high puncture voltage, in order to reduce conducting resistance, can improve the voltage of field plate, thereby improve the concentration of drift region electronics.And when the voltage of transistor V1 was very low, this time, V2 was usually very high, and this time, transistor need to have very high puncture voltage, therefore can allow the voltage of field plate become very low or negative, increased the width of drift region depletion layer, improved puncture voltage.
As shown in Figure 2, because the closer to Metal Contact electrode 9, the voltage of surface is higher.When field plate 11 added reverse voltage, the closer to Metal Contact electrode 9, the voltage difference that exists between Metal Contact electrode 9 and the field plate 11 was larger.If the thickness of insulating barrier 10 is too little like this, can easily cause puncturing.Therefore the thickness of the insulating barrier 10 of the utility model the second embodiment is gradual changes, and is thicker the closer to drain terminal, can also reduce like this parasitic capacitance of drain terminal.
As shown in Figure 3, among the utility model the 3rd embodiment, comprise the field plate 11 and 14 of two mutually insulateds, so just can separately control their voltage, thereby can better control the distribution of electron's density of channel surface.
As shown in Figure 4, among the utility model the 4th embodiment, the field plate 11 and 14 that comprises three mutually insulateds, 15 situation have been shown.
As shown in Figure 5, among the utility model the 4th embodiment, can also adopt three field plates 11 and 14,15 mutual stacked structures, they insulate by insulating barrier each other.
Because RF-LDMOS is normally its independent encapsulation, as a power device, that Fig. 6 shows is a kind of encapsulating structure figure that comprises interior matching structure of RF-LDMOS device corresponding to the utility model.Comprise chip 24,26 and 28 3 chips, the metal backing by electric conducting material and shell is connected together, and is encapsulated on the shell.26 is exactly the chip of RF-LDMOS, high-power because it need to provide, and needs a lot of transistors in parallel, and the input and output impedance comparison is low.Therefore need to make interior match circuit, improve the impedance that input and output are seen into.Chip 24 and 28 is MOSCAP normally.MOSCAP24 and bonding line 25 normally are used for and the input capacitance resonance of RF-LDMOS.Bonding line 27 and MOSCAP28 normally are used for the output capacitance of resonance RF-LDMOS.It is the input and output that connect shell that bonding line 23 is connected with bonding line.Shell needs an independent pin, controls the voltage of field plate, thereby realizes that puncture voltage is adjustable RF-LDMOS device.
That Fig. 7 shows is a kind of encapsulating structure figure that does not comprise interior matching structure of RF-LDMOS device corresponding to the utility model.It forms the similar Fig. 6 of structure, but lacks the chip 24 and 28 of interior coupling.
Above embodiment only is the utility model a kind of execution mode wherein, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the utility model claim.Should be pointed out that for the person of ordinary skill of the art, without departing from the concept of the premise utility, can also make some distortion and improvement, these all belong to protection range of the present utility model.Therefore, the protection range of the utility model patent should be as the criterion with claims.
Claims (5)
1. a puncture voltage can be adjusted the RF-LDMOS device, it comprises substrate, be provided with source electrode and drain electrode on the described substrate, link together by raceway groove between described source electrode and the drain electrode, be provided with grid on the described raceway groove, be provided with oxide layer between described grid and the described raceway groove, described drain electrode comprises the drift region, it is characterized in that: be provided with at least one field plate on the described drift region, be provided with insulating barrier between described field plate and the described drift region, insulate between described field plate and the described source electrode, the voltage of described field plate can be regulated.
2. a puncture voltage according to claim 1 can be adjusted the RF-LDMOS device, it is characterized in that: a described field plate is set on the described drift region, described insulating barrier is thick near the thickness of described source electrode one side part away from the Thickness Ratio of described source electrode one side part, is provided with the arc-shaped transition district between two parts.
3. a puncture voltage according to claim 1 can be adjusted the RF-LDMOS device, it is characterized in that: be provided with two described field plates on the described drift region, do not connect mutually between two described field plates, and voltage separate regulation separately.
4. a puncture voltage according to claim 1 can be adjusted the RF-LDMOS device, it is characterized in that: be provided with three described field plates on the described drift region, do not connect mutually between three described field plates, and voltage separate regulation separately.
5. can adjust the RF-LDMOS device to 4 one of them described puncture voltage according to claim 1, it is characterized in that: described substrate is the SOI substrate.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012203522705U CN202772139U (en) | 2012-07-20 | 2012-07-20 | Radio frequency-laterally diffused metal oxide semiconductor (RF-LDMOS) device capable of regulating breakdown voltage |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012203522705U CN202772139U (en) | 2012-07-20 | 2012-07-20 | Radio frequency-laterally diffused metal oxide semiconductor (RF-LDMOS) device capable of regulating breakdown voltage |
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| CN202772139U true CN202772139U (en) | 2013-03-06 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102790088A (en) * | 2012-07-20 | 2012-11-21 | 昆山华太电子技术有限公司 | Breakdown voltage-adjustable RF-LDMOS device |
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- 2012-07-20 CN CN2012203522705U patent/CN202772139U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102790088A (en) * | 2012-07-20 | 2012-11-21 | 昆山华太电子技术有限公司 | Breakdown voltage-adjustable RF-LDMOS device |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
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| CP03 | Change of name, title or address |
Address after: Room B0604, 388 Ruoshui Road, Suzhou Industrial Park, Wuzhong District, Suzhou City, Jiangsu Province Patentee after: SUZHOU HUATAI ELECTRONIC TECHNOLOGY Co.,Ltd. Address before: 215300 Xiuhai Road, Zhouzhuang Town, Kunshan City, Suzhou City, Jiangsu Province, 188 Patentee before: KUNSHAN HUATAI ELECTRONIC TECHNOLOGY Co.,Ltd. |
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| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130306 |