CN202744663U - Low-defect silicon single crystal rod - Google Patents
Low-defect silicon single crystal rod Download PDFInfo
- Publication number
- CN202744663U CN202744663U CN201220437379.9U CN201220437379U CN202744663U CN 202744663 U CN202744663 U CN 202744663U CN 201220437379 U CN201220437379 U CN 201220437379U CN 202744663 U CN202744663 U CN 202744663U
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- China
- Prior art keywords
- silicon rod
- rod body
- silicon
- single crystal
- low defect
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- Expired - Lifetime
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Abstract
The utility model relates to a low-defect silicon single crystal rod which comprises a silicon rod body; a protective layer is coated on the outer surface of the silicon rod body; a base is arranged at the bottom of the silicon rod body; the silicon rod body is bonded on the base through adhesive; an arc-shaped angle is formed at the intersection of each two adjacent edges of the cross section of the silicon rod body; and the radian of the arc-shaped angle is 90 degrees. As the angles of the silicon rod are designed to be arc-shaped, the crumbling of the low-defect silicon single crystal rod can be avoided during a transportation process; and as the protective layer is coated on the outer surface of the silicon rod, the outer surface of the silicon rod can be protected effectively, so as to improve the qualification rate.
Description
Technical field
The utility model relates to the field of silicon rod, especially a kind of low defect report crystalline silicon rod.
Background technology
At present world's photovoltaic industry is positioned at global energy GENERATION MARKET rate of increase the first with 31.2% annual average rate of increase high speed development.Various countries launch respectively strong policy or formulate evolutionary operation(EVOP) according to this trend, make photovoltaic market present flourish general layout.In recent years, along with the fast development of photovoltaic industry, silicon single crystal was used to make solar cell, presented the situation that supply falls short of demand.Solar panel is under solar radiation, and luminous energy just changes into electric energy immediately, and can ceaselessly generate electricity, can non-stop run more than 20 years.The direct current that he sends can directly be supplied with electrical appliance, can also be stored in the store battery, and another mistake becomes the 220V/380V alternating-current, and then be assembled into the solar electrical energy generation unit, for various household electrical appliance, many silion cells can also be linked, be assembled into photovoltaic plant and transmit electricity to national grid.Solar-energy photo-voltaic cell is that country widelys popularize, and development prospect is bright, does not have the green energy resource that pollutes.
At present, silicon single crystal rod has the good characteristics that section resistivity evenness, high life, carbon content are few, microdefect density is little, oxygen level can be controlled, so far, silicon single crystal rod be photovoltaic industry chain the inside except raw-material first production process, the efficiency of conversion of solar battery sheet is had far-reaching influence.
The shape great majority of the silicon single crystal rod of making at present are tetragon or circle; because circular silicon rod is in carrying out cutting process; the rolling of silicon rod easily causes the unfairness of the silicon chip surface after the cutting; cause the quality of silicon chip unstable; so far; tetragonal silicon rod is for the most common; but tetragonal silicon rod in transit; easily cause four jiaos of silicon rod to cause unfilled corner, collapse broken phenomenon; have a strong impact on the production good article rate of silicon chip, in addition, the outside surface of silicon rod does not possess protective layer; easily in transportation, damage the outside surface of silicon rod, thereby affect the good article rate of silicon rod.
The utility model content
The technical problems to be solved in the utility model is: in order to overcome the problem of above-mentioned middle existence, provide a kind of low defect report crystalline silicon rod, its project organization rationally and can effectively protect silicon rod, improve the good article rate of silicon rod.
The technical scheme that its technical problem that solves the utility model adopts is: a kind of low defect report crystalline silicon rod; comprise the silicon rod body; described this external surface of silicon rod is coated with protective layer; described silicon rod body bottom is provided with base; the silicon rod body sticks on the base by caking agent; the adjacent seamed edge intersection of described silicon rod body cross-section is arc angle, and the radian of arc angle is 90 °.
Further, the radius of described arc angle is 20～25mm.
The length of described silicon rod body is 150～200mm.
In order effectively to protect the silicon rod outside surface, described protective layer material is that PET makes, and the protective membrane that the PET material is made be characterized in the harder yet relatively scratch resistance of quality, and long-time use can not turned over as the PVC material yet yellow fuel-displaced.But the protective membrane that general PET material is made all is to rely on electrostatic adhesion, bubbles and comes off than being easier to, even if but come off to wash in clear water and can reuse again.
The material of described caking agent is that Resins, epoxy is made.
The beneficial effects of the utility model are: described low defect report crystalline silicon rod, the arc design is carried out at the angle of silicon rod, and can in transportation, avoid occurring collapsing broken phenomenon; Coat protective layer at the silicon rod outside surface, can effectively protect the silicon rod outside surface, improve good article rate.
Description of drawings
Below in conjunction with drawings and Examples the utility model is further specified.
Fig. 1 is the one-piece construction schematic diagram of low defect report crystalline silicon rod described in the utility model.
Accompanying drawing acceptance of the bid score state as follows: 1, silicon rod body, 2, protective layer, 3, base, 4, caking agent, 5, arc angle.
Embodiment
By reference to the accompanying drawings the utility model is described in further detail now.These accompanying drawings are the schematic diagram of simplification, basic structure of the present utility model only is described in a schematic way, so it only show the formation relevant with the utility model.
Low defect report crystalline silicon rod as shown in Figure 1; comprise that length is the silicon rod body 1 of 180mm; silicon rod body 1 outside surface is coated with the protective layer 2 that material is PET; silicon rod body 1 bottom is provided with base 3; silicon rod body 1 is that the caking agent 4 of Resins, epoxy sticks on the base 3 by material; such design can be when many silicon rod bodies 1 cut simultaneously, and are convenient when silicon rod body 1 docks with silicon rod body 1 end face.The adjacent seamed edge intersection of silicon rod body 1 cross section is arc angle 5, and the radian of arc angle 5 is 90 °, and the radius of arc angle 5 is 23mm.
No matter low defect report crystalline silicon rod of the present utility model when making silicon rod body 1, because four angles of silicon rod body 1 are arc angle 5, like this in transit, or in cutting, do not exist and collapses broken phenomenon, saves cost.
Take above-mentioned foundation desirable embodiment of the present utility model as enlightenment, by above-mentioned description, the relevant staff can in the scope that does not depart from this utility model technological thought, carry out various change and modification fully.The technical scope of this utility model is not limited to the content on the specification sheets, must determine its technical scope according to the claim scope.
Claims (5)
1. one kind low defect report crystalline silicon rod; it is characterized in that: comprise silicon rod body (1); described silicon rod body (1) outside surface is coated with protective layer (2); described silicon rod body (1) bottom is provided with base (3); silicon rod body (1) sticks on the base (3) by caking agent (4); the adjacent seamed edge intersection of described silicon rod body (1) cross section is arc angle (5), and the radian of arc angle (5) is 90 °.
2. low defect report crystalline silicon rod according to claim 1, it is characterized in that: the radius of described arc angle (5) is 20～25mm.
3. low defect report crystalline silicon rod according to claim 1, it is characterized in that: the length of described silicon rod body (1) is 150～200mm.
4. low defect report crystalline silicon rod according to claim 1, it is characterized in that: the material of described protective layer (2) is that PET makes.
5. low defect report crystalline silicon rod according to claim 1, it is characterized in that: the material of described caking agent (4) is that Resins, epoxy is made.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220437379.9U CN202744663U (en) | 2012-08-30 | 2012-08-30 | Low-defect silicon single crystal rod |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220437379.9U CN202744663U (en) | 2012-08-30 | 2012-08-30 | Low-defect silicon single crystal rod |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202744663U true CN202744663U (en) | 2013-02-20 |
Family
ID=47704091
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201220437379.9U Expired - Lifetime CN202744663U (en) | 2012-08-30 | 2012-08-30 | Low-defect silicon single crystal rod |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202744663U (en) |
-
2012
- 2012-08-30 CN CN201220437379.9U patent/CN202744663U/en not_active Expired - Lifetime
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130220 |