CN202744662U - Solar silicon single crystal rod - Google Patents

Solar silicon single crystal rod Download PDF

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Publication number
CN202744662U
CN202744662U CN201220437377.XU CN201220437377U CN202744662U CN 202744662 U CN202744662 U CN 202744662U CN 201220437377 U CN201220437377 U CN 201220437377U CN 202744662 U CN202744662 U CN 202744662U
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CN
China
Prior art keywords
single crystal
silicon single
crystal rod
barred body
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN201220437377.XU
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Chinese (zh)
Inventor
王桂奋
谢德兵
王迎春
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Znshine Pv Tech Co Ltd
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Znshine Pv Tech Co Ltd
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Priority to CN201220437377.XU priority Critical patent/CN202744662U/en
Application granted granted Critical
Publication of CN202744662U publication Critical patent/CN202744662U/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

The utility model relates to a solar silicon single crystal rod, which is formed by multiple silicon single crystal rod bodies in an overlying manner, wherein a protective film fitted with the silicon single crystal rod bodies is arranged on the upper surface of the silicon single crystal rod bodies; the protective film is coated with a stickup layer; a bottom plate is arranged at the lower part of the silicon single crystal rod bodies; the bottom plate is coated with an epoxy resin stickup layer; two baffles are arranged on two sides of the silicon single crystal rod bodies respectively; and the silicon single crystal rod bodies are stuck onto the bottom plate through the baffles. The solar silicon single crystal rod adopting the design can avoid thickness unevenness during wire mesh cutting and can efficiently improve the quality of the wafer.

Description

A kind of solar energy single crystal silicon rod
Technical field
The utility model relates to the field of silicon rod, especially a kind of solar energy single crystal silicon rod.
Background technology
At present world's photovoltaic industry is with 31.2% annual average rate of increase high speed development, and it is the first to be positioned at global energy GENERATION MARKET rate of increase.Various countries launch respectively strong policy or formulate evolutionary operation(EVOP) according to this trend, make photovoltaic market present flourish general layout.In recent years, along with the fast development of photovoltaic industry, silicon single crystal was used to make solar cell, presented the situation that supply falls short of demand.Solar panel is under solar radiation, and luminous energy just changes into electric energy immediately, and can ceaselessly generate electricity, can non-stop run more than 20 years.The direct current that he sends can directly be supplied with electrical appliance, can also be stored in the store battery, and another mistake becomes the 220V/380V alternating-current, and then be assembled into the solar electrical energy generation unit, for various household electrical appliance, many silion cells can also be linked, be assembled into photovoltaic plant and transmit electricity to national grid.Solar-energy photo-voltaic cell is that country widelys popularize, and development prospect is bright, does not have the green energy resource that pollutes.
Silicon single crystal rod is the single crystal of silicon, is the crystal with basic perfect lattice structure, and diverse ways has different character, is a kind of good material of partly leading, and weak electroconductibility is arranged, and its electric conductivity increases with the rising of temperature, and significant semi-conductivity is arranged.When silicon single crystal rod line cuts, in the time of gauze contact crystal bar surface, because the effect of power causes the swing of silicon rod easily, so just cause easily the wafer became uneven that cuts out even, thereby cause the performance of wafer, in addition, at present existingly can only carry out single silicon rod cutting to silicon single crystal rod cutting, its cutting efficiency is low, cuts if stack up, thereby can cause again not lining up of silicon rod to cause cutting irregular phenomenon.
Summary of the invention
The technical problems to be solved in the utility model is: in order to overcome the problem of above-mentioned middle existence, provide a kind of solar energy single crystal silicon rod, its project organization rationally and be difficult in cutting process by abrasive material rush broken, yield rate is high.
The technical scheme that its technical problem that solves the utility model adopts is: a kind of solar energy single crystal silicon rod; comprise that complex root silicon single crystal barred body is formed by stacking; the upper surface of described silicon single crystal barred body is provided with the protective membrane that fits with the silicon single crystal barred body; be coated with adhered layer on the protective membrane; the bottom of silicon single crystal barred body is provided with base plate; be coated with the Resins, epoxy adhered layer on the base plate, the both sides of silicon single crystal barred body are equipped with baffle plate, and the silicon single crystal barred body sticks on the base plate by baffle plate.
Further, the material of described adhered layer is that Resins, epoxy is made.
Reclaim for clout continuation that can cutting is enough, the adjacent seamed edge intersection of described silicon single crystal barred body cross section is chamfering structure, and the angle between its chamfering and the seamed edge is 60 °.
The length of described silicon single crystal barred body is 220~280mm.
The beneficial effects of the utility model are: described solar energy single crystal silicon rod, the silicon rod of this design can avoid occurring phenomenon in uneven thickness when carrying out the gauze cutting, can effectively improve the quality of wafer.
Description of drawings
Below in conjunction with drawings and Examples the utility model is further specified.
Fig. 1 is the front view of solar energy single crystal silicon rod described in the utility model;
The side-view of the solar energy single crystal silicon rod described in the utility model of Fig. 2.
Accompanying drawing acceptance of the bid score state as follows: 1, silicon single crystal barred body, 2, protective membrane, 3, adhered layer, 4, base plate, 5, the Resins, epoxy adhered layer, 6, baffle plate.
Embodiment
By reference to the accompanying drawings the utility model is described in further detail now.These accompanying drawings are the synoptic diagram of simplification, basic structure of the present utility model only is described in a schematic way, so it only show the formation relevant with the utility model.
Solar energy single crystal silicon rod as depicted in figs. 1 and 2; comprise that complex root length is that the silicon single crystal barred body 1 of 250mm is formed by stacking; the adjacent seamed edge intersection of the cross section of silicon single crystal barred body 1 is chamfering structure; angle between its chamfering and the seamed edge is 60 °; upper surface at silicon single crystal barred body 1 is provided with the protective membrane 2 that fits with silicon single crystal barred body 1; being coated with material on the protective membrane 2 is the adhered layer 3 of Resins, epoxy; the bottom of silicon single crystal barred body 1 is provided with base plate 4; be coated with Resins, epoxy adhered layer 5 on the base plate 4; the both sides of silicon single crystal barred body 1 are equipped with baffle plate 6, and silicon single crystal barred body 1 sticks on the base plate 4 by baffle plate 6.
Solar energy single crystal silicon rod of the present utility model; utilize many silicon single crystal barred bodies mutually to stack up; two silicon single crystal barred bodies 1 are pasted by the adhered layer 3 above the protective membrane 2 up and down; base plate 4 clings the bottom of silicon single crystal barred body 1 by the Resins, epoxy adhered layer; when cutting; make its cutting more smooth, guaranteed the quality of wafer after the cutting.
Take above-mentioned foundation desirable embodiment of the present utility model as enlightenment, by above-mentioned description, the relevant staff can in the scope that does not depart from this utility model technological thought, carry out various change and modification fully.The technical scope of this utility model is not limited to the content on the specification sheets, must determine its technical scope according to the claim scope.

Claims (4)

1. solar energy single crystal silicon rod; it is characterized in that: comprise that complex root silicon single crystal barred body (1) is formed by stacking; the upper surface of described silicon single crystal barred body (1) is provided with the protective membrane (2) that fits with silicon single crystal barred body (1); be coated with adhered layer (3) on the protective membrane (2); the bottom of silicon single crystal barred body (1) is provided with base plate (4); be coated with Resins, epoxy adhered layer (5) on the base plate (4); the both sides of silicon single crystal barred body (1) are equipped with baffle plate (6), and silicon single crystal barred body (1) sticks on the base plate (4) by baffle plate (6).
2. solar energy single crystal silicon rod according to claim 1, it is characterized in that: the material of described adhered layer (3) is that Resins, epoxy is made.
3. solar energy single crystal silicon rod according to claim 1, it is characterized in that: the adjacent seamed edge intersection of described silicon single crystal barred body (1) cross section is chamfering structure, 60 ° of the angles between its chamfering and the seamed edge.
4. solar energy single crystal silicon rod according to claim 1, it is characterized in that: the length of described silicon single crystal barred body (1) is 220~280mm.
CN201220437377.XU 2012-08-30 2012-08-30 Solar silicon single crystal rod Expired - Lifetime CN202744662U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201220437377.XU CN202744662U (en) 2012-08-30 2012-08-30 Solar silicon single crystal rod

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201220437377.XU CN202744662U (en) 2012-08-30 2012-08-30 Solar silicon single crystal rod

Publications (1)

Publication Number Publication Date
CN202744662U true CN202744662U (en) 2013-02-20

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201220437377.XU Expired - Lifetime CN202744662U (en) 2012-08-30 2012-08-30 Solar silicon single crystal rod

Country Status (1)

Country Link
CN (1) CN202744662U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112809949A (en) * 2021-01-21 2021-05-18 常州时创能源股份有限公司 Rod splicing method suitable for small monocrystalline silicon blocks and application

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112809949A (en) * 2021-01-21 2021-05-18 常州时创能源股份有限公司 Rod splicing method suitable for small monocrystalline silicon blocks and application

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Granted publication date: 20130220