CN202735005U - Pressure sensor, oscillator and ultrasonic sensor - Google Patents
Pressure sensor, oscillator and ultrasonic sensor Download PDFInfo
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- CN202735005U CN202735005U CN 201220255824 CN201220255824U CN202735005U CN 202735005 U CN202735005 U CN 202735005U CN 201220255824 CN201220255824 CN 201220255824 CN 201220255824 U CN201220255824 U CN 201220255824U CN 202735005 U CN202735005 U CN 202735005U
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Abstract
The utility model relates to a pressure sensor, an oscillator and an ultrasonic sensor. The pressure sensor includes a first pole plate, a second pole plate, a third pole plate, a fourth pole plate and a fifth pole plate which are sequentially stacked on a substrate of a control and read-out circuit, wherein the first pole plate, the third pole plate and the fourth pole plate are fixed opposite to the substrate, the first pole plate and the second pole plate are opposite to each other with a gap therebetween, the second pole plate is suspended over the first pole plate so as to form a pair of capacitors, the second pole plate and the third pole plate are opposite to each other with a gap formed therebetween so as to form a pair of capacitors, the fourth pole plate and the fifth pole plate are opposite to each other with a gap formed therebetween, the fifth pole plate is suspended over the fourth pole plate so as to form a pair of capacitors which can move along a direction perpendicular to the surface of the substrate. According to the pressure sensor provided by the utility model, a plurality of capacitors are arranged in a capacitive pressure sensor, and capacitors whose capacitance changes in a positive direction and capacitors whose capacitance changes in a negative direction are arranged in the plurality of capacitors, thereby improving accuracy; and the change of capacitance values can be more sensitive, thereby enabling a larger measurable range.
Description
Technical field
The utility model relates to a kind of pressure transducer, relates in particular to a kind of integrated high sensitive pressure sensor, oscillator and ultrasonic sensor.
Background technology
MEMS (micro electro mechanical system) (Microelectro Mechanical Systems, be called for short MEMS) is the research frontier of the multidisciplinary intersection that grows up on the microelectric technique basis, is a kind of technology that adopts semiconductor technology to make micro-electro-mechanical device.Compare with traditional electromechanical device, the MEMS device has fairly obvious advantage aspect high temperature resistant, small size, the low-power consumption.Development through decades has become one of great sciemtifec and technical sphere of attracting attention in the world, and it relates to multiple subject and the technology such as electronics, machinery, material, physics, chemistry, biology, medical science, has broad application prospects.
Pressure transducer is a kind of transducer that pressure signal is converted to electric signal.Difference according to principle of work is divided into piezoresistive pressure sensor and capacitance pressure transducer.The principle of capacitance pressure transducer, is come gaging pressure for by the electric capacity between pressure change top plate and the bottom plate with this.
Figure 1 shows that a kind of capacitance pressure transducer,, it comprises substrate 10, be arranged in the fixed polar plate 20 of substrate, but be positioned at the movable plate electrode 30 of substrate top, but movable plate electrode 30, cavity 40 of substrate 10 and 35 besieged cities of the sealing ring between movable electrode 30 and substrate 10, but fixed polar plate 20 and movable plate electrode 30 are oppositely arranged and consist of a pair of electric capacity, but movable plate electrode 30 can be close to fixed polar plate 20 under the effect of pressure, thereby so that the capacitance of electric capacity changes, by the measurement to capacitance, can obtain force value.But but the part of this pressure transducer most critical is the spacing between movable plate electrode and the fixed polar plate, and the too little measurement range for pressure of spacing is less, and spacing is too large so that the degree of accuracy reduction of pressure transducer.
Traditional oscillator also comprises structure shown in Figure 1 usually, but utilize to give movable plate electrode and fixed polar plate apply conversion in the same way or reverse voltage, but so that movable plate electrode vibrating near fixed polar plate with away from the fixed polar plate both direction.But, if just need relatively high voltage ability so that oscillator vibrates for but the spacing between this oscillator movable plate electrode and the fixed polar plate is too large, again can be so that the scope of vibration be very little but spacing is too little.
The utility model content
Consider the shortcoming of prior art, in order to improve the degree of accuracy of pressure transducer, in the utility model, existing capacitance pressure transducer, structure is improved, increase to an electric capacity of existing capacitance pressure transducer, a plurality of, and the inventor is provided with the electric capacity of positive change and the electric capacity of inverse change in a plurality of electric capacity, like this so that when pressure changes, the changing value of a plurality of electric capacity superposes, thereby improved degree of accuracy, because wherein there is the electric capacity of positive change and inverse change, thereby so that the variation of capacitance is more responsive, and measurable scope is larger.
The purpose of this utility model provides the higher pressure transducer of a kind of degree of accuracy, oscillator and ultrasonic sensor.
For achieving the above object, the utility model provides a kind of pressure transducer, it is characterized in that, be included in control, stack gradually the first pole plate of arrangement on the sensing circuit substrate, the second pole plate, tri-electrode, quadripolar plate and the 5th pole plate, the first pole plate wherein, the relative substrate with quadripolar plate of tri-electrode is fixed, the first pole plate and the second pole plate relatively and between have the gap, the second pole plate is suspended at the first pole plate top and consists of a pair of electric capacity, the second pole plate is relative with tri-electrode and have the gap and consist of a pair of electric capacity, quadripolar plate is relative with the 5th pole plate and have a gap, the 5th pole plate is suspended at the quadripolar plate top and consists of a pair of electric capacity, can be along moving perpendicular to the substrate surface direction.
Preferably, under the state of nature that is not subjected to external force, the gap between the second pole plate and the tri-electrode is less than the gap between the first pole plate and the second pole plate, and the gap between the second pole plate and the tri-electrode is less than the gap between quadripolar plate and the 5th pole plate.
Preferably, has the first insulating medium layer between tri-electrode and the quadripolar plate.
Preferably, the material of the second pole plate and the 5th pole plate is germanium silicon, and the material of described the first insulating medium layer is siliceous dielectric material, comprises monox, silicon nitride, silicon hydroxide and hydrocarbon monox.
Preferably, the second pole plate and the 5th pole plate are by linking to each other with vertical joint pin or the connecting band of substrate.
Preferably, a section of the combination of the second pole plate, the 5th pole plate and joint pin or connecting band is I shape.
Preferably, described the first pole plate is lamination layer structure, comprises aluminium lamination and the titanium layer that is positioned on the aluminium lamination.
Preferably, also comprise the first sealing ring, the second sealing ring, the 3rd sealing ring, the first sealing ring is positioned on the substrate, it is peripheral that the second sealing ring is positioned at the second pole plate, the overlapping edges of third electrode is on the second sealing ring, the 3rd sealing ring and is positioned on the edge of quadripolar plate between quadripolar plate and the 5th pole plate, and the first pole plate, tri-electrode, quadripolar plate, the 5th pole plate, the first sealing ring and the second sealing ring, the 3rd sealing ring be common to consist of a cavity.
Preferably, described the second sealing ring and the second electrode form in same processing step, and its material is identical, and between have the interval it does not linked to each other.
Preferably, have the second insulating medium layer at the 5th pole plate, have the sextupole plate at described the second insulating medium layer.
Preferably, comprise MOS device or circuit in the substrate below the first pole plate.
According on the other hand of the present utility model, a kind of pressure transducer is provided, it is characterized in that, it is included in the second pole plate, tri-electrode, quadripolar plate and the 5th pole plate that stacks gradually arrangement on the substrate, wherein the second pole plate is relative with tri-electrode and have the gap and consist of a pair of electric capacity, quadripolar plate is relative with the 5th pole plate and have the gap and consist of a pair of electric capacity, the relative substrate with quadripolar plate of tri-electrode is fixed, and the second pole plate and the 5th pole plate are fixedly linked and can be simultaneously along moving perpendicular to the substrate surface direction.
According on the other hand of the present utility model, a kind of pressure transducer is provided, it is characterized in that, be included in the first pole plate, the second pole plate, tri-electrode, quadripolar plate and the pressing layer that stack gradually arrangement on the substrate, wherein the first pole plate and the second pole plate relatively and between have the gap and consist of a pair of electric capacity, the second pole plate is relative with tri-electrode and have the gap and consist of a pair of electric capacity, the relative substrate with quadripolar plate of tri-electrode is fixed, and the second pole plate and pressing layer are fixedly linked and can be simultaneously along moving perpendicular to the substrate surface direction.
According on the other hand of the present utility model, a kind of oscillator is provided, it is characterized in that, be included in the first pole plate that stacks gradually arrangement on the substrate, the second pole plate, tri-electrode, quadripolar plate and the 5th pole plate, wherein the first pole plate and the second pole plate relatively and between have the gap, the second pole plate is suspended at the first pole plate top and consists of a pair of electric capacity, the second pole plate is relative with tri-electrode and have the gap and consist of a pair of electric capacity, quadripolar plate is relative with the 5th pole plate and have a gap, the 5th pole plate is suspended at the quadripolar plate top and consists of a pair of electric capacity, the first pole plate, the relative substrate with quadripolar plate of tri-electrode is fixed, the second pole plate and the 5th pole plate are fixedly linked and can be simultaneously along moving perpendicular to the substrate surface direction, when applying alternating voltage for the second pole plate and tri-electrode, then the second pole plate vibrates.
Preferably, the gap between the second pole plate and the tri-electrode is less than the gap between the first pole plate and the second pole plate, and the gap between the second pole plate and the tri-electrode is less than the gap between quadripolar plate and the 5th pole plate.
According on the other hand of the present utility model, a kind of ultrasonic sensor is provided, it is characterized in that, comprise structure: the first pole plate that stacks gradually arrangement at substrate, the second pole plate, tri-electrode, quadripolar plate and pressing layer, wherein the relative substrate with quadripolar plate of tri-electrode is fixed, the first pole plate and the second pole plate relatively and between have the gap, the second pole plate is suspended at the first pole plate top and consists of a pair of electric capacity, the second pole plate is relative with tri-electrode and have the gap and consist of a pair of electric capacity, quadripolar plate is relative with pressing layer and have the gap, and the second pole plate and pressing layer are fixedly linked and can be simultaneously along moving perpendicular to the substrate surface direction.
Preferably, pressing layer is the 5th pole plate, and the 5th pole plate is suspended at the quadripolar plate top and consists of a pair of electric capacity.
Compared with prior art, the utlity model has following advantage:
Pressure transducer of the present utility model is comprised of a plurality of electric capacity, the variation sum of therefore when measuring pressure, getting several electric capacity, like this so that the degree of accuracy of pressure transducer is higher, the electric capacity that further in pressure transducer of the present utility model, has comprised positive change and inverse change, like this so that the degree of accuracy of pressure transducer further improve.
Description of drawings
Describe in more detail example embodiment by the reference accompanying drawing, it is more obvious that above and other feature and advantage will become for those skilled in the art, in the accompanying drawing:
Fig. 1 is the structural representation of existing pressure transducer;
Fig. 2 to Fig. 9 is the structural representation according to the formation method of the pressure transducer of an embodiment of the utility model;
Figure 10 is the structural representation of pressure transducer one embodiment of the present utility model.
Embodiment
For above-mentioned purpose of the present utility model, feature and advantage can more be become apparent, below in conjunction with accompanying drawing embodiment of the present utility model is described in detail.
Set forth detail in the following description so that fully understand the utility model.But the utility model can be different from alternate manner described here and implements with multiple, and those skilled in the art can do similar popularization in the situation of the utility model intension.Therefore the utility model is not subjected to the restriction of following public embodiment.
Fig. 2 to Fig. 9 is the structural representation according to the formation method of the pressure transducer of an embodiment of the utility model.Below in conjunction with Fig. 2 to Fig. 9 the structure of pressure transducer of the present utility model is elaborated.
As shown in Figure 2, in the present embodiment, pressure transducer comprises substrate 100, has the MOS circuit in the substrate 100, for example can be metering circuit or the driving circuit of pressure transducer, in the present embodiment for read, control circuit.At first on substrate 100, be coated with the last layer photoresist, pass through whirl coating, cure, afterwards the substrate 100 of processing through gluing is carried out photoetching treatment, take patterned photoresist as mask, etching is removed the substrate 100 that not graphical photoresist covers, and on substrate 100, defining the channel portions that is positioned at the first middle pole plate 110 and the channel portions that is positioned at the interconnecting metal layer 115 of both sides, the channel portions shape of interconnecting metal layer 115 can be incoherent annular or other shapes.Can utilize afterwards the method for chemical vapor deposition or physical vapor deposition to form the skim layer of titanium metal at bottom and the sidewall of the channel portions of the first pole plate 110 of centre, the thickness of layer of titanium metal is about 10-50nm, Titanium serves as the binder of substrate, can play with monox and sige alloy layer and can both keep good adhesive attraction, by the Surface filling metal aluminium lamination of physical vapor deposition at the sheet metal titanium layer, wherein the thickness of aluminium lamination is 50-1000nm afterwards.Titanium and metal aluminium lamination have consisted of the first pole plate 110 jointly.Can in preparation the first pole plate 110, utilize chemical vapor deposition or physical vapour deposition (PVD) to prepare interconnecting metal layer 115.The material of interconnecting metal layer 115 can be identical with the first pole plate 110, also can be different, and such as being gold, silver, copper, aluminium, tungsten, a kind of in tantalum, the titanium or their alloy can also be wherein a kind of of titanium nitride, tantalum nitride.In the present embodiment, the first pole plate 110 is lamination layer structures, namely has the structure of double layer of metal, in other embodiment, can also be three-decker, is followed successively by from top to bottom the lamination layer structure of the aluminium formation of bottom titanium, middle layer titanium nitride and the superiors.The surface of chemically mechanical polishing the first pole plate 110 and interconnecting metal layer 115 is so that substrate 100 has the surface of an overall planarization.Pass through the insulation course 112 of chemical vapor deposition growth thickness 10-500nm on the surface of the first pole plate 110, chemically mechanical polishing insulation course 112 surfaces, insulation course 112 can be monox or silicon nitride, as the insulation between the pole plate.
As shown in Figure 3, at insulation course 112 surface chemistry vapour depositions the first sacrifice layer S1, the thickness of the first sacrifice layer S1 is 10-2000nm, the preferred amorphous carbon of the material of the first sacrifice layer S1.Upper surface at the first sacrifice layer S1 is coated with the last layer photoresist, pass through whirl coating, cure, afterwards the first sacrifice layer S1 that processes through gluing is carried out photoetching treatment, take patterned photoresist as mask, etching is removed the first sacrifice layer S1 that not graphical photoresist covers, the the first sacrifice layer S1 that wherein removes is positioned at the upper surface of interconnecting metal layer 115, and namely not removed the first sacrifice layer S 1 does not cover fully and is positioned at peripheral interconnecting metal layer 115.At the upper surface of the first sacrifice layer S1 by the chemical vapor deposition silicon oxide layer, it also can be silicon nitride layer, silicon oxide layer to deposition carries out chemical mechanical polish process, when being polished to the first sacrifice layer S1 of amorphous carbon, stop polishing, so that silicon oxide layer has identical plane with the first sacrifice layer S1, at this moment formed the first sealing ring 120 at interconnecting metal layer 115.Upper surface at the first sealing ring 120 and the first sacrifice layer S1 is coated with the last layer photoresist afterwards, afterwards the first sealing ring 120 of processing through gluing is carried out photoetching treatment, take patterned photoresist as mask, etching is removed the first sealing ring that not graphical photoresist covers.Wherein photoetching on interconnecting metal layer 115, etch through hole, the bottom of through hole contacts with the upper surface of interconnecting metal layer 115.The surface that the second pole plate 130 that at last is 20nm-10um at upper surface chemical vapor deposition or the physical vapor deposition thickness of the first sealing ring 120 and the first sacrifice layer S1 and chemically mechanical polishing obtain an overall planarization.Preferably on the second pole plate 130, form the skim insulation course, the material of insulation course be well known by persons skilled in the art those, formed blanket insulative layer is used for preventing the second pole plate 130 and top structure contact short circuit.Wherein the material of the second pole plate 130 can be germanium silicon, can also be metal, in the present embodiment preferred germanium silicon.Spacing distance between the first pole plate 110 and the second pole plate 130 is the thickness of the first sealing ring 120, thereby the first pole plate 110 and the second pole plate 130 consist of a pair of electric capacity, and the second pole plate 130 can be along moving perpendicular to substrate 100 surface direction.
In other embodiment, surface when chemically mechanical polishing the first pole plate 110 and interconnecting metal layer 115, so that after substrate 100 has the surface of an overall planarization, can also be to form simultaneously insulation course 112 and the first sealing ring 120 at the thicker silicon oxide layer of surface chemistry vapour deposition one deck of the first pole plate 110, the thickness 20-2500nm of the silicon oxide layer that forms, the chemical mechanical polishing silica layer.On silicon oxide layer, be coated with afterwards the last layer photoresist, afterwards the silicon oxide layer of processing through gluing is carried out photoetching treatment, take patterned photoresist as mask, etching is removed the silicon oxide layer that not graphical photoresist covers, form simultaneously insulation course 120 and the first sealant 120, the thickness of the silicon oxide layer that institute's etching is removed is less than the thickness of the silicon oxide layer of deposition, and has groove in the middle of the silicon oxide layer after the etching, the groove of the silicon oxide layer after the etching is positioned at the top of the first pole plate 110, and the groove of the silicon oxide layer after the etching does not cover interconnecting metal layer 115.The first sacrifice layer S1 of chemical vapor deposition amorphous carbon in the groove of the silicon oxide layer after etching afterwards, chemically mechanical polishing the first sacrifice layer S1 is until throw the plane at the first sealing ring 120 places.Be coated with the last layer photoresist on the surface of the first sacrifice layer S1 and the first sealing ring 120 afterwards, the first sealing ring 120 of processing through gluing is carried out photoetching treatment, take patterned photoresist as mask, the silicon oxide layer that etching is removed above the interconnecting metal layer 115 forms through hole, and formed through hole is positioned at the top of interconnecting metal layer 115 and contacts with the upper surface of interconnecting metal layer 115.Contact with interconnecting metal layer 115 at the first sacrifice layer S1 upper surface chemical vapor deposition or physical vapour deposition (PVD) germanium silicon and filling vias at last, chemical mechanical polish process forms the second pole plate 130, and wherein the spacing distance between the first pole plate 110 and the second pole plate 130 is the thickness of the first sealing ring 120.
As shown in Figure 4, upper surface at the second pole plate 130 is coated with the last layer photoresist, afterwards the second pole plate 130 of processing through gluing is carried out photoetching treatment, take patterned photoresist as mask, etching is removed the second pole plate 130 that not graphical photoresist covers, and form the perforate 130v that runs through the second pole plate 130, so that the first sacrifice layer S1 comes out.In the present embodiment, the quantity of perforate 130v is 12, in other embodiment, and also can other numbers.Form simultaneously the second sealing ring 122, formed the second sealing ring 122 is positioned on the first sealing ring 120, and the second sealing ring 122 surrounds the second pole plate 130, and does not link to each other with the second pole plate 130.Chemical vapor deposition thickness is the second sacrifice layer S2 of 5-1500nm on perforate 130v, the preferred amorphous carbon of the material of the second sacrifice layer S2.On the second sacrifice layer S2, be coated with the last layer photoresist, afterwards the second sacrifice layer S2 that processes through gluing is carried out photoetching treatment, take patterned photoresist as mask, etching is removed the second sacrifice layer S2 that not graphical photoresist covers, the part that wherein is not etched is center section, in etching process, the outer ledge partial etching with the right and left of the second sacrifice layer S2 forms the inclined-plane with certain angle simultaneously.Itself and the opposed arrangement about in the of 110 of the first pole plate.The second pole plate 130 is positioned at the centre of the first sacrifice layer S1 and the second sacrifice layer S2.
As shown in Figure 5, being the metal of 20nm-1000nm or the tri-electrode 140 of germanium silicon material at the second sacrifice layer S2 upper surface by chemical vapor deposition or physical vapour deposition (PVD) thickness, is the first insulating medium layer 150 of the silicon oxide layer of 10-1000nm at tri-electrode 140 upper surface chemical vapor deposition thickness.Silicon oxide layer for example, it covers tri-electrode 140, and the formation method can for formation method known in the art, not repeat them here.Be coated with the last layer photoresist at the first insulating medium layer 150, afterwards the first insulating medium layer 150 of processing through gluing is carried out photoetching treatment, take patterned photoresist as mask, etching is removed the first insulating medium layer 150 that not graphical photoresist covers, the lower end that the through hole that etching forms runs through the first insulating medium layer 150 and through hole is positioned at tri-electrode 140 inside, thereby so that the germanium silicon material of tri-electrode 140 be exposed in the air.Have the gap between tri-electrode 140 and the second pole plate 130, thereby the second pole plate 130 and tri-electrode 140 consist of a pair of electric capacity.The overlapping edges of tri-electrode 140 makes tri-electrode 140 be supported on the second pole plate 130 tops on the second sealing ring 122, and the middle section of tri-electrode 140 is suspended on the second pole plate 130, and is opposite with it.Utilize chemical vapor deposition or physical vapour deposition (PVD) thickness to be the preferred germanium silicon of material of quadripolar plate 160, the quadripolar plates 160 of 20-1000nm at the first insulating medium layer 150 afterwards.In the present embodiment, on quadripolar plate 160, can also have insulation course, oxide thin layer silicon layer for example, the thickness of this insulation course can for 10 nanometers to 500 nanometers.Quadripolar plate 160 can cover on the first insulating medium layer 150 or be positioned at subregion on the first insulating medium layer 150, quadripolar plate 160 overlapping edges on the first corresponding above the first sealing ring 120 insulating dielectric layer layer 150, thereby play the fixing effect of quadripolar plate 160.Be coated with the last layer photoresist at quadripolar plate 160, afterwards the quadripolar plate 160 of processing through gluing is carried out photoetching treatment, take patterned photoresist as mask, etching is removed tri-electrode 140, the first insulating medium layer 150 and the quadripolar plate 160 that not graphical photoresist covers, and form the perforate 140v that runs through tri-electrode 140, the first insulating medium layer 150 and quadripolar plate 160, form simultaneously in the middle of being positioned at and the contact hole that is connected with the second sacrifice layer S2.Perforate 140v be connected with the second sacrifice layer S2 and with up and down opposed arrangement of perforate 130v, in other embodiment, perforate 140v can be not and up and down opposed arrangement of perforate 130v yet.
In the present embodiment, perforate 140v forms by two step etching quadripolar plates 160, the first insulating medium layer 150 and tri-electrode 140.It should be understood that also and can form the perforate 140v that runs through tri-electrode 140, the first insulating medium layer 150 and quadripolar plate 160 by a step etching quadripolar plate 160, the first insulating medium layer 150 and tri-electrode 140.Specific embodiment is as follows: be the metal of 20-1000nm or the tri-electrode 140 of germanium silicon material at the second sacrifice layer S2 upper surface by chemical vapor deposition or physical vapour deposition (PVD) thickness, be the first insulating medium layer 150 of the silicon oxide layer of 10-1000nm at tri-electrode 140 upper surface chemical vapor deposition thickness, utilize chemical vapor deposition or physical vapour deposition (PVD) thickness to be the preferred germanium silicon of material of quadripolar plate 160, the quadripolar plates 160 of 20-1000nm at the first insulating medium layer 150.On quadripolar plate 160, can also have insulation course, oxide thin layer silicon layer for example, the thickness of this insulation course can for 10 nanometers to 500 nanometers.Be coated with the last layer photoresist at quadripolar plate 160 afterwards, the quadripolar plate 160 of processing through gluing is carried out photoetching treatment, take patterned photoresist as mask, etching is removed quadripolar plate 160, the first insulating medium layer 150 and the tri-electrode 140 that not graphical photoresist covers successively, and with the upper surface of the second sacrifice layer S2 stop layer as etching.Formation runs through the perforate 140v of tri-electrode 140, the first insulating medium layer 150 and quadripolar plate 160, forms simultaneously in the middle of being positioned at and the contact hole that is connected with the second sacrifice layer S2.
As shown in Figure 6, at quadripolar plate 160 depositions the 3rd sacrifice layer S3.The preferred amorphous carbon of the material of the 3rd sacrifice layer S3.Simultaneously in perforate 140v and contact hole, fill amorphous carbon.The amorphous carbon of filling contacts with the second sacrifice layer S2.Formed the 3rd sacrifice layer S3 of chemically mechanical polishing.Afterwards chemical vapor deposition silicon oxide layer or silicon nitride layer on the 3rd sacrifice layer S3, the formed silicon oxide layer of chemically mechanical polishing or silicon nitride layer, and form silicon oxide layer or the silicon nitride layer of the 3rd sacrifice layer S3 edge as polishing stop layer with the 3rd sacrifice layer S3.The silicon oxide layer that deposits or silicon nitride layer are positioned on the outer toroid of the 3rd sacrifice layer S3 and with the 3rd sacrifice layer S3 and surround, form the 3rd sealing ring 165, the three sealing rings 165 thickness can for 20 nanometers to 1000 nanometers.
As shown in Figure 7, be coated with the last layer photoresist at the 3rd sacrifice layer S3, afterwards the 3rd sacrifice layer S3 that processes through gluing is carried out photoetching treatment, take patterned photoresist as mask, etching is removed the second sacrifice layer S2 of not graphical photoresist covering and the amorphous carbon between the 3rd sacrifice layer S3.Be that the material of the 5th pole plate 170, the five pole plates 170 of 20nm-10um can be metal or germanium silicon at the upper surface of the 3rd sacrifice layer S3 by chemical vapor deposition or physical vapour deposition (PVD) thickness, preferred germanium silicon.In the middle of contact hole, form joint pin 175, wherein the lower surface of joint pin 175 is connected with the second pole plate 130, upper surface is connected with the 5th pole plate 170, thereby so that the support of the second pole plate 130 by joint pin 175 suspend, and can be mobile together with the 5th pole plate 170.In other embodiments, the second pole plate 130 also can link to each other by other means with the 5th pole plate 170 or be mobile together.Last chemically mechanical polishing the 5th pole plate 170.Has the gap between the 5th pole plate 170 and the quadripolar plate 160, thereby quadripolar plate 160 and the 5th pole plate 170 consist of a pair of electric capacity, the 5th pole plate 170 can be along moving perpendicular to the substrate surface direction, the overlapping edges of the 5th pole plate 170 is on the 3rd sealing ring 165, the middle section of the 5th pole plate 170 because and quadripolar plate 160 between have the gap, make it be suspended at quadripolar plate 160 tops, therefore the thickness of the 3rd sealing ring 165 is exactly the distance in the gap between quadripolar plate 160 and the 5th pole plate 170, and namely the thickness of the 3rd sealing ring 165 is 20-2000nm.
As shown in Figure 8, on the 5th pole plate 170, be coated with the last layer photoresist, afterwards the 5th pole plate 170 of processing through gluing is carried out photoetching treatment, take patterned photoresist as mask, etching is removed the 5th pole plate 170 that not graphical photoresist covers, form perforate 170v, wherein perforate 170v contacts with the 3rd sacrifice layer S3.Sacrifice layer by perforate 170v, perforate 140v and perforate 130v dry method removal amorphous carbon discharges the MEMS structure simultaneously.
As shown in Figure 9, at perforate 170v and chemical vapor deposition the second insulating medium layer 180 above the 5th pole plate 170, sealing perforate 170v finishes the making of capacitance pressure transducer, by semiconductor technology.Preparation thickness is the sextupole plate 190 of 20-1000nm on the second insulating medium layer 180 afterwards, and material is sige alloy semiconductor, aluminium or homogenous material film or aluminium and titanium laminate film.Chemically mechanical polishing sextupole plate 190, on sextupole plate 190, be coated with the last layer photoresist, the sextupole plate 190 of processing through gluing is carried out photoetching treatment, take patterned photoresist as mask, etching is removed the sextupole plate 190 that not graphical photoresist covers, and finishes at last resistive pressure sensor.
As shown in figure 10, in the present embodiment, pressure transducer comprises substrate 100, has the MOS circuit in the substrate, for example can be metering circuit or the driving circuit of pressure transducer.Substrate 100 surfaces have on the first pole plate 110, the first pole plates 110 can have insulation course 112, and for example oxide thin layer silicon or silicon nitride prevent that the second pole plate 130 contacts the first pole plate 110 from forming short circuits, the thickness of insulation course 112 can for 10 nanometers to 500 nanometers.The material of the first pole plate 110 can be metal material, preferably adopted in the present embodiment lamination layer structure, it is double layer of metal, aluminium lamination and the titanium layer that is positioned on the aluminium lamination, wherein titanium layer can play with monox and sige alloy layer and can both keep good adhesive attraction, the bonding that guarantees the first pole plate 110 and the insulation course 112 on it is stable, wherein the thickness of aluminium lamination be 50 nanometers to 1000 nanometers, the thickness of titanium layer is that 10 nanometers are to 50 nanometers.The first pole plate 110 can utilize the method for chemical vapor deposition or physical vapor deposition to form.In the same processing step that forms the first pole plate 110, can form interconnecting metal layer 115 in the periphery of the first pole plate 110, interconnecting metal layer 115 and the first pole plate 110 can be by the method isolated insulations of etching, and the shape of interconnecting metal layer 115 can be incoherent annular or other shapes.
Have the first sealing ring 120, the first sealing rings 120 at interconnecting metal layer 115 and can be insulating medium, such as monox, silicon nitride etc., the thickness of the first sealing ring is that 10 nanometers are to 2000 nanometers in the present embodiment.The first sealing ring 120 can utilize the method for chemical vapor deposition to form one deck silicon oxide layer at the first pole plate 110 and interconnecting metal layer 115, then utilize the method for etching to remove silicon oxide layer on the first pole plate 110, the silicon oxide layer that keeps the first pole plate 110 peripheries, if for example interconnecting metal layer 115 is for surrounding the annular of the first pole plate 110, the silicon oxide layer that can keep on the interconnecting metal layer 115 surrounds the first pole plate 110 as the first sealing ring 120, the first sealing rings 120.The first sealing ring 120 is in the follow-up effect that also has encirclement formation closed cavity, and the thickness of the first sealing ring 120 can be thought the spacing distance between the first pole plate and the second pole plate.The second sealing ring 122 can form in same step process with the second electrode 130, material is identical, in etch step second electrode isolation that neutralizes, in addition, the second sealing ring 122 also can form in independent step, its material can be insulating material, such as monox, silicon nitride etc., and the thickness of the second sealing ring 122 is that 10 nanometers are to 2000 nanometers in the present embodiment.
The second pole plate 130 is suspended at the top of the first pole plate 110, and has the gap between the first pole plate 110, thereby the first pole plate 110 and the second pole plate 130 consist of a pair of electric capacity, and the second pole plate 130 can be along moving perpendicular to substrate 100 surface direction.Have the second sealing ring 122, the second sealing rings 122 at the first sealing ring 120 and surround the second pole plate 130, and do not link to each other with the second pole plate 130.The formation method of the second pole plate 130 can be for forming sacrifice layer at the first pole plate 110 first, utilize method deposited metal or the germanium silicon layer of chemical vapor deposition or physical vapor deposition at sacrifice layer, utilize afterwards the method for etching to form the second pole plate 130, the thickness of the second pole plate 130 is 20 nanometers to 10 micron in the present embodiment.In the second pole plate 130, have perforate 130v, be used for follow-up removal sacrifice layer, form cavity.Preferably have blanket insulative layer at the second pole plate 130, be used for preventing tri-electrode 140 contact short circuits of the second pole plate 130 and its top.
Having suspended at the second pole plate 130 has the gap between tri-electrode 140, the tri-electrodes 140 and the second pole plate 130, thereby the second pole plate 130 and tri-electrode 140 consist of a pair of electric capacity.The overlapping edges of tri-electrode 140 makes tri-electrode 140 be supported on the second pole plate 130 tops on the second sealing ring 122, and the middle section of tri-electrode 140 is suspended on the second pole plate 130, and is relative with it.The material of tri-electrode 140 can be metal or germanium silicon, and the thickness of tri-electrode 140 is that 20 nanometers are to 1000 nanometers in the present embodiment.The formation method can for: form sacrifice layer at the second pole plate 130, then etching is removed sacrifice layer corresponding on the second sealing ring 122, then utilize method deposited metal or the germanium silicon layer of chemical vapor deposition or physical vapor deposition at sacrifice layer and the second sealing ring 122, utilize afterwards the method for etching to form tri-electrode 140.In tri-electrode 140, have perforate 140v, be used for follow-up removal sacrifice layer, form cavity.Be formed with the first insulating medium layer 150 on the tri-electrode 140, silicon oxide layer for example, it covers tri-electrode 140, and the formation method can for formation method known in the art, not repeat them here.Perforate 140v in the tri-electrode 140 runs through the first insulating medium layer 150, be used for follow-up removal sacrifice layer, form cavity, in the present embodiment, the thickness of the first insulating medium layer 150 be 10 nanometers to 1000 nanometers, the spacing distance between the second pole plate 130 and the tri-electrode 140 is that 5 nanometers are to 1500 nanometers.
Has quadripolar plate 160 at the first insulating medium layer 150, quadripolar plate 160 can cover the first insulating medium layer 150 or be positioned at subregion on the first insulating medium layer 150, overlapping edges on the first insulating dielectric layer layer 150 of the first sealing ring 120 correspondences, thereby play the fixing effect of quadripolar plate 160.Quadripolar plate 160 can utilize method deposited metal or the germanium silicon layer of chemical vapor deposition or physical vapor deposition, utilize afterwards the method for etching to form quadripolar plate 160, perforate 140v in the tri-electrode 140 runs through quadripolar plate 160, this perforate 140v is used for follow-up removal sacrifice layer, form cavity, in the present embodiment the thickness of quadripolar plate 160 can for 20 nanometers to 1000 nanometers.On quadripolar plate 160, can also have insulation course, oxide thin layer silicon layer for example, be used for preventing quadripolar plate 160 and the 5th pole plate 170 on it near the time contact short circuit.The thickness of this insulation course can for 10 nanometers to 500 nanometers.
Above the zone of quadripolar plate 160 corresponding the first sealing rings 120, have the 3rd sealing ring 165, the three sealing rings 165 and can be insulating medium, monox for example, silicon nitride etc., the thickness of the 3rd sealing ring 165 can for 20 nanometers to 1000 nanometers.The 3rd sealing ring 165 can utilize the method for chemical vapor deposition to form one deck silicon oxide layer at quadripolar plate 160, then utilize the method for etching to remove silicon oxide layer on the quadripolar plate 160 of middle section, the silicon oxide layer that can keep quadripolar plate 160 edges also has the effect that forms closed cavity of surrounding as the 3rd sealing ring 165, the three sealing rings 165 follow-up.
The 5th pole plate 170 has suspended above quadripolar plate 160, has the gap between the 5th pole plate 170 and the quadripolar plate 160, thereby quadripolar plate 160 and the 5th pole plate 170 consist of a pair of electric capacity, the 5th pole plate 170 can be along moving perpendicular to the substrate surface direction, the overlapping edges of the 5th pole plate 170 is on the 3rd sealing ring 165, the middle section of the 5th pole plate 170 because and quadripolar plate 160 between have the gap, make it be suspended at quadripolar plate 160 tops, therefore the thickness of the 3rd sealing ring 165 is exactly the distance in the gap between quadripolar plate 160 and the 5th pole plate 170, and namely distance is that 20 nanometers are to 2000 nanometers.The formation method of the 5th pole plate 170 can be for forming sacrifice layer at quadripolar plate 160 first, utilize method deposited metal or the germanium silicon layer of chemical vapor deposition or physical vapor deposition at sacrifice layer, utilize afterwards the method for etching to form the 5th pole plate 170, in the present embodiment, the thickness of the 5th pole plate 170 is 20 nanometers to 10 micron.In the 5th pole plate 170, have perforate 170v, be used for follow-up removal sacrifice layer, form cavity.
In the present embodiment, the material of sacrifice layer is amorphous carbon, and its formation method is chemical vapor deposition method.Concrete process conditions are: utilize plasma enhanced CVD to form amorphous carbon layer, the temperature of described plasma enhanced CVD is 350 ℃ ~ 450 ℃, air pressure is 1torr ~ 20torr, RF power is 800W ~ 1500W, reacting gas comprises: C3H6 and He, reaction gas flow is 1000sccm ~ 3000sccm, and wherein C3H6:He is 2:1 ~ 5:1.Remove sacrifice layer and can utilize the perforate in each pole plate after the 5th pole plate 170 forms, logical snperoxiaized method is removed.
In one embodiment, the second pole plate 130 links to each other by joint pin or the connecting band that is positioned at the center with the 5th pole plate 170, for example concrete in the present embodiment is that a section of joint pin 175, the second pole plates 130, the 5th pole plate 170 and joint pin or connecting band is I shape.For example be connected with joint pin 175 between the second pole plate 130 and the 5th pole plate 170 in the present embodiment, isolate with tri-electrode 140, quadripolar plate 160 and the first insulating medium layer 150 around the joint pin 175, thereby so that the support of the second pole plate 130 by joint pin 175 suspend, and can be mobile together with the 5th pole plate 170.Its method for making can for, before forming the 5th pole plate 170, rhythmo structure to tri-electrode 140, the first insulating medium layer 150 and quadripolar plate 160 carries out etching, form therein the hole that exposes the second pole plate 130, when forming the 5th pole plate 170, fill simultaneously this hole, form the joint pin 175 that connects the second pole plate.In other embodiments, the second pole plate also can link to each other by other means with the 5th pole plate or be mobile together.
Pressure transducer in above-described embodiment comprises three electric capacity, the first capacitor C 1 that the first pole plate 110 and the second pole plate 130 consist of, the second capacitor C 2 that the second pole plate 130 and tri-electrode 140 consist of, the 3rd capacitor C 3 that quadripolar plate 160 and the 5th pole plate 170 consist of, wherein the first pole plate 110, tri-electrode 140 and quadripolar plate 160 are fixing, and the second pole plate 130 links to each other with the 5th pole plate 170.The second pole plate 130 and the 5th pole plate 170 are done the time spent being under pressure, can be simultaneously to moving near the substrate surface direction, thereby so that the pitch smaller between the first capacitor C 1 and the 3rd capacitor C 3, it is large that spacing between the second capacitor C 2 becomes, and utilizes like this stack of the variation of three capacitances to come calculating pressure so that measurement result is more accurate.
Preferably, the gap between the second pole plate 130 and the tri-electrode 140 is less than the gap between the first pole plate 110 and the second pole plate 130, and the gap between the second pole plate 130 and the tri-electrode 140 is less than the gap between quadripolar plate 160 and the 5th pole plate 170.What such the first capacitor C 1 and the 3rd capacitor C 3 spacings arranged can be slightly large, measurement range when increasing large pressure, and being spacings between the two-plate, the second capacitor C 2 increases gradually, so the spacing that the second capacitor C 2 arranges between the two-plate is less, like this for the first capacitor C 1, the little pressure that the 3rd capacitor C 3 can't record can be measured by the second capacitor C 2, has therefore increased the pressure measurement range of 1 electric capacity of traditional employing.
Preferably, has the second insulating medium layer 180 at the 5th pole plate 170, has sextupole plate 190 at described the second insulating medium layer 180, when pressure is applied on the pressure transducer, because the 5th pole plate 170 belows are cavitys, therefore sextupole plate 190 can bend, thereby so that words occur to become in the resistance of sextupole plate 190, thereby the variation according to sextupole plate 190 resistance can record force value, force value and the first pole plate 110 that sextupole plate 190 is recorded, the second pole plate 130, tri-electrode 140, the force value that quadripolar plate 160 and the 5th pole plate 170 record combines the measuring pressure value, so that the measurement of force value is more accurate, the thickness of sextupole plate 190 is that 20 nanometers are to 1000 nanometers in the present embodiment, material is the sige alloy semiconductor, aluminium or homogenous material film or aluminium and titanium laminate film.
The pressure transducer of said structure can also be as oscillator, because the spacing between the second pole plate 130 and the tri-electrode 160 is very little, therefore after giving each pole plate making alive, voltage that only need to be very little just can be so that 130 vibrations of the second pole plate, thereby oscillator can be operated under the very low voltage, the first capacitor C 1 that consists of at high pressure range the first pole plate 110 and the second pole plate 130 like this, the 3rd capacitor C 3 work that quadripolar plate 160 and the 5th pole plate 170 consist of, so that oscillator vibration, and work in the second capacitor C 2 of low pressure range the second pole plate 130 and tri-electrode 140 formations, so that oscillator vibration, thereby so that this oscillator not only can satisfy operating on low voltage but also can satisfy the demand of high-pressure work.
The utility model also provides a kind of ultrasonic sensor that comprises said structure, it comprises structure: the first pole plate that stacks gradually arrangement at substrate, the second pole plate, tri-electrode, quadripolar plate and pressing layer, wherein the relative substrate with quadripolar plate of tri-electrode is fixed, the first pole plate and the second pole plate relatively and between have the gap, the second pole plate is suspended at the first pole plate top and consists of a pair of electric capacity, the second pole plate is relative with tri-electrode and have the gap and consist of a pair of electric capacity, quadripolar plate is relative with pressing layer and have the gap, and the second pole plate and pressing layer are fixedly linked and can be simultaneously along moving perpendicular to the substrate surface direction.
Wherein, pressing layer is the 5th pole plate, and the 5th pole plate is suspended at the quadripolar plate top and consists of a pair of electric capacity.
The measuring method of above-mentioned ultrasonic sensor comprises step:
Pressing layer is contacted supersonic sensing actual measurement body;
Give first the second pole plate and tri-electrode input alternating voltage in the first period, vibrate simultaneously to drive the second pole plate and pressing layer;
Outwards transmit pressure waves by pressing layer;
Accept the actual measurement body to the oscillation pressure signal of pressing layer in the second period by measuring pressing layer, comprise oscillation amplitude, frequency and phase place.
Wherein, the actual measurement body of sensing is to the oscillation pressure signal of pressing layer, by between the first pole plate and second utmost point, at least one variable capacitance comes sensing between the second pole plate and the tri-electrode.
Wherein, the actual measurement body of sensing also can be measured by the variable capacitance between the 5th pole plate and quadripolar plate the oscillation pressure signal of pressing layer.Because the spacing variation from small to large between two pole plates of the second capacitor C 2, what therefore its spacing can arrange is very little, applying very little voltage to two pole plate so just can be so that ultrasound wave be sent in its vibration, ultrasound wave is launched and is reflected back this device by human body afterwards, it can receive the ultrasonic signal that human body is reflected back as pressure transducer, thereby utilize the principle of piezoelectric effect that electric energy and ultrasound wave are transformed mutually, namely when emission is hyperacoustic, with the electric energy conversion, the emission ultrasound wave; And when receiving echo, then ultrasonic vibration is converted to electric signal, realize the double action of sending and receiving sound wave.
Although the utility model discloses as above with preferred embodiment, the utility model is not to be defined in this.Any those skilled in the art within not breaking away from spirit and scope of the present utility model, all can make various changes or modifications, and therefore protection domain of the present utility model should be as the criterion with the claim limited range.
Claims (17)
1. a pressure transducer is characterized in that,
Be included in control, stack gradually the first pole plate of arrangement on the sensing circuit substrate, the second pole plate, tri-electrode, quadripolar plate and the 5th pole plate, the first pole plate wherein, the relative substrate with quadripolar plate of tri-electrode is fixed, the first pole plate and the second pole plate relatively and between have the gap, the second pole plate is suspended at the first pole plate top and consists of a pair of electric capacity, the second pole plate is relative with tri-electrode and have the gap and consist of a pair of electric capacity, quadripolar plate is relative with the 5th pole plate and have a gap, the 5th pole plate is suspended at the quadripolar plate top and consists of a pair of electric capacity, can be along moving perpendicular to the substrate surface direction.
2. pressure transducer as claimed in claim 1, it is characterized in that, under the state of nature that is not subjected to external force, gap between the second pole plate and the tri-electrode is less than the gap between the first pole plate and the second pole plate, and the gap between the second pole plate and the tri-electrode is less than the gap between quadripolar plate and the 5th pole plate.
3. pressure transducer as claimed in claim 1 is characterized in that, has the first insulating medium layer between tri-electrode and the quadripolar plate.
4. pressure transducer as claimed in claim 3 is characterized in that, the material of the second pole plate and the 5th pole plate is germanium silicon, and the material of described the first insulating medium layer is siliceous dielectric material, comprises monox, silicon nitride, silicon hydroxide and hydrocarbon monox.
5. pressure transducer as claimed in claim 1 is characterized in that, the second pole plate and the 5th pole plate are by linking to each other with vertical joint pin or the connecting band of substrate.
6. pressure transducer as claimed in claim 5, a section of the combination of the second pole plate, the 5th pole plate and joint pin or connecting band is I shape.
7. pressure transducer as claimed in claim 1 is characterized in that, described the first pole plate is lamination layer structure, comprises aluminium lamination and the titanium layer that is positioned on the aluminium lamination.
8. pressure transducer as claimed in claim 1, it is characterized in that, also comprise the first sealing ring, the second sealing ring, the 3rd sealing ring, the first sealing ring is positioned on the substrate, it is peripheral that the second sealing ring is positioned at the second pole plate, the overlapping edges of third electrode is on the second sealing ring, the 3rd sealing ring is between quadripolar plate and the 5th pole plate, and be positioned on the edge of quadripolar plate the first pole plate, tri-electrode, quadripolar plate, the 5th pole plate, the first sealing ring and the second sealing ring, cavity of the common formation of the 3rd sealing ring.
9. pressure transducer as claimed in claim 1 is characterized in that, described the second sealing ring and the second electrode form in same processing step, and its material is identical, and between have the interval it does not linked to each other.
10. pressure transducer as claimed in claim 1 is characterized in that, has the second insulating medium layer at the 5th pole plate, has the sextupole plate at described the second insulating medium layer.
11. pressure transducer as claimed in claim 1 is characterized in that, comprises MOS device or circuit in the substrate below the first pole plate.
12. pressure transducer, it is characterized in that, it is included in the second pole plate, tri-electrode, quadripolar plate and the 5th pole plate that stacks gradually arrangement on the substrate, wherein the second pole plate is relative with tri-electrode and have the gap and consist of a pair of electric capacity, quadripolar plate is relative with the 5th pole plate and have the gap and consist of a pair of electric capacity, the relative substrate with quadripolar plate of tri-electrode is fixed, and the second pole plate and the 5th pole plate are fixedly linked and can be simultaneously along moving perpendicular to the substrate surface direction.
13. pressure transducer, it is characterized in that, be included in the first pole plate, the second pole plate, tri-electrode, quadripolar plate and the pressing layer that stack gradually arrangement on the substrate, wherein the first pole plate and the second pole plate relatively and between have the gap and consist of a pair of electric capacity, the second pole plate is relative with tri-electrode and have the gap and consist of a pair of electric capacity, the relative substrate with quadripolar plate of tri-electrode is fixed, and the second pole plate and pressing layer are fixedly linked and can be simultaneously along moving perpendicular to the substrate surface direction.
14. oscillator, it is characterized in that, be included in the first pole plate that stacks gradually arrangement on the substrate, the second pole plate, tri-electrode, quadripolar plate and the 5th pole plate, wherein the first pole plate and the second pole plate relatively and between have the gap, the second pole plate is suspended at the first pole plate top and consists of a pair of electric capacity, the second pole plate is relative with tri-electrode and have the gap and consist of a pair of electric capacity, quadripolar plate is relative with the 5th pole plate and have a gap, the 5th pole plate is suspended at the quadripolar plate top and consists of a pair of electric capacity, the first pole plate, the relative substrate with quadripolar plate of tri-electrode is fixed, the second pole plate and the 5th pole plate are fixedly linked and can be simultaneously along moving perpendicular to the substrate surface direction, when applying alternating voltage for the second pole plate and tri-electrode, then the second pole plate vibrates.
15. oscillator as claimed in claim 14, it is characterized in that, gap between the second pole plate and the tri-electrode is less than the gap between the first pole plate and the second pole plate, and the gap between the second pole plate and the tri-electrode is less than the gap between quadripolar plate and the 5th pole plate.
16. ultrasonic sensor, it is characterized in that, comprise structure: the first pole plate that stacks gradually arrangement at substrate, the second pole plate, tri-electrode, quadripolar plate and pressing layer, wherein the relative substrate with quadripolar plate of tri-electrode is fixed, the first pole plate and the second pole plate relatively and between have the gap, the second pole plate is suspended at the first pole plate top and consists of a pair of electric capacity, the second pole plate is relative with tri-electrode and have the gap and consist of a pair of electric capacity, quadripolar plate is relative with pressing layer and have the gap, and the second pole plate and pressing layer are fixedly linked and can be simultaneously along moving perpendicular to the substrate surface direction.
17. ultrasonic sensor as claimed in claim 16 is characterized in that, pressing layer is the 5th pole plate, and the 5th pole plate is suspended at the quadripolar plate top and consists of a pair of electric capacity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220255824 CN202735005U (en) | 2012-05-31 | 2012-05-31 | Pressure sensor, oscillator and ultrasonic sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220255824 CN202735005U (en) | 2012-05-31 | 2012-05-31 | Pressure sensor, oscillator and ultrasonic sensor |
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| CN202735005U true CN202735005U (en) | 2013-02-13 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103454018A (en) * | 2012-05-31 | 2013-12-18 | 上海丽恒光微电子科技有限公司 | Pressure sensor, oscillator, ultrasonic sensor and measuring method |
| CN104003346A (en) * | 2013-02-25 | 2014-08-27 | 中芯国际集成电路制造(上海)有限公司 | Membrane structure, pressure sensor and electronic device |
| CN105181186A (en) * | 2015-05-29 | 2015-12-23 | 歌尔声学股份有限公司 | Pressure sensing element and manufacturing method thereof |
| CN105261622A (en) * | 2014-06-03 | 2016-01-20 | 上海丽恒光微电子科技有限公司 | Manufacturing method of imaging detector |
| CN109313095A (en) * | 2016-05-27 | 2019-02-05 | 罗伯特·博世有限公司 | Micro-mechanical component for pressure sensor apparatus |
| CN110510573A (en) * | 2019-08-30 | 2019-11-29 | 中国科学院深圳先进技术研究院 | A kind of capacitive micromachined ultrasonic transducer and its preparation method and application |
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| CN103454018B (en) * | 2012-05-31 | 2015-09-09 | 上海丽恒光微电子科技有限公司 | Pressure transducer, oscillator, ultrasonic sensor and measuring method |
| CN103454018A (en) * | 2012-05-31 | 2013-12-18 | 上海丽恒光微电子科技有限公司 | Pressure sensor, oscillator, ultrasonic sensor and measuring method |
| CN104003346A (en) * | 2013-02-25 | 2014-08-27 | 中芯国际集成电路制造(上海)有限公司 | Membrane structure, pressure sensor and electronic device |
| CN105261622B (en) * | 2014-06-03 | 2017-12-22 | 上海丽恒光微电子科技有限公司 | A kind of manufacture method of imaging detector |
| CN105261622A (en) * | 2014-06-03 | 2016-01-20 | 上海丽恒光微电子科技有限公司 | Manufacturing method of imaging detector |
| CN105181186A (en) * | 2015-05-29 | 2015-12-23 | 歌尔声学股份有限公司 | Pressure sensing element and manufacturing method thereof |
| CN105181186B (en) * | 2015-05-29 | 2017-10-03 | 歌尔股份有限公司 | A kind of pressure sensor and its manufacture method |
| CN109313095A (en) * | 2016-05-27 | 2019-02-05 | 罗伯特·博世有限公司 | Micro-mechanical component for pressure sensor apparatus |
| US10845262B2 (en) | 2016-05-27 | 2020-11-24 | Robert Bosch Gmbh | Micromechanical component for a pressure sensor device |
| CN109313095B (en) * | 2016-05-27 | 2021-03-12 | 罗伯特·博世有限公司 | Micromechanical component for a pressure sensor device |
| CN110510573A (en) * | 2019-08-30 | 2019-11-29 | 中国科学院深圳先进技术研究院 | A kind of capacitive micromachined ultrasonic transducer and its preparation method and application |
| CN110510573B (en) * | 2019-08-30 | 2023-01-10 | 中国科学院深圳先进技术研究院 | Capacitive micro-mechanical ultrasonic transducer and preparation method and application thereof |
| CN113708620A (en) * | 2021-08-25 | 2021-11-26 | 慧石（上海）测控科技有限公司 | Charge pump circuit structure and miniature charge pump |
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