CN106960903A - A kind of miniature directional ultrasonic transducer and its processing technology - Google Patents
A kind of miniature directional ultrasonic transducer and its processing technology Download PDFInfo
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- CN106960903A CN106960903A CN201710322352.2A CN201710322352A CN106960903A CN 106960903 A CN106960903 A CN 106960903A CN 201710322352 A CN201710322352 A CN 201710322352A CN 106960903 A CN106960903 A CN 106960903A
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- ultrasonic transducer
- piezoelectric material
- material layer
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- electrode
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- 238000005516 engineering process Methods 0.000 title claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 230000004888 barrier function Effects 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 4
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000003980 solgel method Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 239000004952 Polyamide Substances 0.000 claims 1
- 150000002466 imines Chemical class 0.000 claims 1
- 229920002647 polyamide Polymers 0.000 claims 1
- 239000013589 supplement Substances 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- 230000010354 integration Effects 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000005459 micromachining Methods 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000007769 metal material Substances 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
Abstract
The present invention discloses a kind of miniature directional ultrasonic transducer, including piezoelectric material layer, and piezoelectric material layer top surface sets Top electrode, piezoelectric material layer bottom surface sets bottom electrode, Top electrode top surface covers insulating barrier, bottom electrode bottom surface covering silicon dioxide layer, the support of bottom electrode underrun silicon substrate；The invention also discloses the processing technology of this kind of miniature directional ultrasonic transducer.The present invention has small volume, easy of integration, dynamical advantage, suitable for being used on micromodule equipment；Can also be using MEMS technology processing.
Description
Technical field
The present invention relates to electronic component field, more particularly to a kind of miniature directional ultrasonic transducer and its processing technology.
Background technology
Ultrasonic transducer is to convert electrical signals to the component of ultrasonic signal, and the ultrasonic wave for being modulated with audible sound is changed
After energy device is transmitted into air, the audible sound with high directivity is demodulated by non-linear interaction.
The piezoelectric with preferably actuating property, such as zinc oxide (ZnO), aluminium nitride (AlN) are used transducer material more
With lead zirconate titanate (PZT) etc..The principle of sound of this kind of piezoelectric is：When applying electric signal, piezoelectric can produce machinery and shake
It is dynamic, to reach the purpose of transmitting ultrasonic signal.
Microelectromechanical systems (Micro-Electro-Mechanical System, MEMS) be size in grade, it is interior
Portion's physical dimension is in micron even nano level autonomous intelligence system.MEMS process technologies include the erosion similar to traditional IC technique
The techniques such as quarter, thin film deposition, photoetching, chemically mechanical polishing, also including the micro-processing technology for the micro-structural for realizing complexity.Wherein lead
Stream is silicon micromachining technique, mainly includes silicon bulk micromachining technology and silicon face micro-processing technology.Silicon bulk micromachining is
Refer to the technique that the thickness direction sunk to the bottom along silicon is etched to silicon substrate, including dry etching and wet etching, this is construction
The important method of device three-dimensional structure.Silicon face micro Process is to be passed through using thin film deposition and etching energy mode in thin film sacrificial layer
Upper deposition structure layer film, then removes the technology that sacrifice layer realizes complex micro structure.It is general using heavy for the processing of film
Area method or sputtering method are carried out.
The content of the invention
The present invention is intended to provide a kind of miniature directional ultrasonic transducer, easy of integration with small volume, dynamical advantage,
Suitable for being used on micromodule equipment.
To reach above-mentioned purpose, the present invention is realized using following technical scheme：
Miniature directional ultrasonic transducer disclosed by the invention, including piezoelectric material layer, the piezoelectric material layer top surface are set
Top electrode, piezoelectric material layer bottom surface sets bottom electrode, and the Top electrode top surface covers insulating barrier, the bottom electrode bottom surface covering two
Silicon oxide layer, the support of bottom electrode underrun silicon substrate.
Further, silicon substrate bottom surface middle position is provided with pit.
It is preferred that, the pit is truncated cone-shaped, is held under greatly.
It is preferred that, the material of the piezoelectric material layer is zinc oxide, aluminium nitride or lead zirconate titanate.
It is preferred that, the Top electrode, the material of bottom electrode are gold, platinum or aluminium.
It is preferred that, the material of the insulating barrier is polyimides.
The invention also discloses the processing technology of miniature directional ultrasonic transducer, comprise the steps：
A, in silicon substrate top surface depositing support layer；
B, etching silicon substrate formation cavity；
C, in supporting layer deposited on top metal level it is used as bottom electrode；
D, in bottom electrode top surface piezoelectric material layer is prepared using sol-gel process；
E, in piezoelectric material layer top surface deposited metal layer it is used as Top electrode；
F, the top surface spincoating insulating layer in Top electrode.
It is preferred that, the supporting layer is silicon nitride.
Further, in step d, prepare and at least deposited twice during piezoelectric material layer, the thickness of the film of formation
Degree is reached after (10 μm to 100 μm), is made annealing treatment.
It is preferred that, the thickness of the insulating barrier is (0.1 μm~5 μm).
The present invention has small volume, easy of integration, dynamical advantage, suitable for being used on micromodule equipment；It can also use
MEMS technology is processed.
Brief description of the drawings
Fig. 1 is structural representation of the invention；
Fig. 2 is top view of the invention；
Fig. 3 is the schematic diagram after silicon dioxide layer is processed；
Fig. 4 is the schematic diagram after silicon substrate etching and processing；
Fig. 5 is the schematic diagram after bottom electrode is processed；
Fig. 6 is the schematic diagram after piezoelectric material layer is processed；
Fig. 7 is the schematic diagram after Top electrode is processed；
In figure：1- is insulating barrier, 2- Top electrodes, 3- piezoelectric material layers, 4- bottom electrodes, 5- silicon dioxide layers, 6- silicon substrates.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, below in conjunction with accompanying drawing, the present invention is entered
Row is further described.
As shown in Figure 1 and Figure 2, miniature directional ultrasonic transducer disclosed by the invention, including silicon substrate 6, Top electrode 2, lower electricity
Pole 4, piezoelectric material layer 3, insulating barrier 1 and silica (SiO2) layer 5, piezoelectric is placed between upper/lower electrode, silica
As the etching stopping layer of silicon substrate, prepared by heating surface of silicon.Piezoelectric used can be zinc oxide (ZnO),
Aluminium nitride (AlN), lead zirconate titanate (PZT) and other piezoelectrics.Upper and lower electrode is using the good metal material system of electric conductivity
Into, including golden (Au), platinum (Pt), aluminium (Al) and the excellent metal material of other electric conductivities.Insulating barrier uses insulating properties
Excellent material is made, for example polyimides (polyimide)..
As shown in Fig. 3-Fig. 7, the invention also discloses the processing technology of miniature directional ultrasonic transducer, using MEMS technology
It is processed, uses the techniques such as deposition, etching, silicon bulk micromachining and silicon face micro Process, specific implementation step is：
A, the material for depositing one layer of high mechanical strength on a silicon substrate, such as silicon nitride are used as supporting layer；
B, etching silicon substrate formation cavity；
C, in layer deposition metal level it is used as bottom electrode；
D, piezoelectric material layer is prepared with sol-gel process, whole process needs Multiple depositions to form thicker film, finally
Carry out the preparation that annealing completes film；
E, in piezoelectric material layer disposed thereon metal level it is used as Top electrode；
F, in the certain thickness insulating barrier of top layer spin coating.
Certainly, the present invention can also have other various embodiments, ripe in the case of without departing substantially from spirit of the invention and its essence
Various corresponding changes and deformation, but these corresponding changes and deformation can be made according to the present invention by knowing those skilled in the art
The protection domain of appended claims of the invention should all be belonged to.
Claims (10)
1. a kind of miniature directional ultrasonic transducer, it is characterised in that：Including piezoelectric material layer, the piezoelectric material layer top surface is set
Top electrode, piezoelectric material layer bottom surface sets bottom electrode, and the Top electrode top surface covers insulating barrier, the bottom electrode bottom surface covering two
Silicon oxide layer, the support of bottom electrode underrun silicon substrate.
2. miniature directional ultrasonic transducer according to claim 1, it is characterised in that：Silicon substrate bottom surface middle position
Provided with pit.
3. miniature directional ultrasonic transducer according to claim 1, it is characterised in that：The pit is truncated cone-shaped, big end
Under.
4. miniature directional ultrasonic transducer according to claim 1, it is characterised in that：The material of the piezoelectric material layer is
Zinc oxide, aluminium nitride or lead zirconate titanate.
5. miniature directional ultrasonic transducer according to claim 1, it is characterised in that：The material of the Top electrode, bottom electrode
Expect for gold, platinum or aluminium.
6. miniature directional ultrasonic transducer according to claim 1, it is characterised in that：The material of the insulating barrier is polyamides
Imines.
7. suitable for the processing technology of the miniature directional ultrasonic transducer described in claim any one of 1-6, it is characterised in that：Bag
Include following step：
A, in silicon substrate top surface depositing support layer；
B, etching silicon substrate formation cavity；
C, in supporting layer deposited on top metal level it is used as bottom electrode；
D, in bottom electrode top surface piezoelectric material layer is prepared using sol-gel process；
E, in piezoelectric material layer top surface deposited metal layer it is used as Top electrode；
F, the top surface spincoating insulating layer in Top electrode.
8. processing technology according to claim 7, it is characterised in that：The supporting layer is silicon nitride.
9. processing technology according to claim 7, it is characterised in that：In step d, prepare during piezoelectric material layer extremely
Deposited twice less, the thickness of the film of formation is reached after (10 μm to 100 μm please supplement thickness range), is made annealing treatment.
10. processing technology according to claim 7, it is characterised in that：The thickness of the insulating barrier is (0.1 μm~5 μm).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710322352.2A CN106960903A (en) | 2017-05-09 | 2017-05-09 | A kind of miniature directional ultrasonic transducer and its processing technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710322352.2A CN106960903A (en) | 2017-05-09 | 2017-05-09 | A kind of miniature directional ultrasonic transducer and its processing technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106960903A true CN106960903A (en) | 2017-07-18 |
Family
ID=59482005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710322352.2A Pending CN106960903A (en) | 2017-05-09 | 2017-05-09 | A kind of miniature directional ultrasonic transducer and its processing technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106960903A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112250032A (en) * | 2019-07-22 | 2021-01-22 | 安徽奥飞声学科技有限公司 | Manufacturing method of MEMS structure |
| CN112452694A (en) * | 2020-09-23 | 2021-03-09 | 长江大学 | Multi-frequency piezoelectric miniature ultrasonic transducer unit, array and method |
| CN113182157A (en) * | 2021-04-27 | 2021-07-30 | 之江实验室 | Flexible piezoelectric ultrasonic transducer |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87202867U (en) * | 1987-03-04 | 1988-11-09 | 刘剑秋 | Energy transducer with long-life piezoelectric ceramic wafer |
| EP1530292A2 (en) * | 2003-11-07 | 2005-05-11 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric resonator, method of manufacturing piezoelectric resonator, and filter, duplexer, and communication device using piezolectric resonator |
| CN1731595A (en) * | 2005-08-31 | 2006-02-08 | 清华大学 | Micro-ultrasonic device making technics facing facing orientation and distance-measuring application |
| CN101106836A (en) * | 2007-07-12 | 2008-01-16 | 电子科技大学 | Micro sound frequency directional ultrasound energy converter array |
| CN103000802A (en) * | 2012-11-20 | 2013-03-27 | 溧阳市生产力促进中心 | Method for manufacturing piezoelectric element with ion exchange enhancement layer on insulated substrate |
| CN106291562A (en) * | 2015-05-30 | 2017-01-04 | 鸿富锦精密工业（深圳）有限公司 | Ultrasound wave sensor and manufacture method, ultrasound wave sensor array |
| CN206893630U (en) * | 2017-05-09 | 2018-01-16 | 成都泰声科技有限公司 | A kind of miniature directional ultrasonic transducer |
-
2017
- 2017-05-09 CN CN201710322352.2A patent/CN106960903A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87202867U (en) * | 1987-03-04 | 1988-11-09 | 刘剑秋 | Energy transducer with long-life piezoelectric ceramic wafer |
| EP1530292A2 (en) * | 2003-11-07 | 2005-05-11 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric resonator, method of manufacturing piezoelectric resonator, and filter, duplexer, and communication device using piezolectric resonator |
| CN1731595A (en) * | 2005-08-31 | 2006-02-08 | 清华大学 | Micro-ultrasonic device making technics facing facing orientation and distance-measuring application |
| CN101106836A (en) * | 2007-07-12 | 2008-01-16 | 电子科技大学 | Micro sound frequency directional ultrasound energy converter array |
| CN103000802A (en) * | 2012-11-20 | 2013-03-27 | 溧阳市生产力促进中心 | Method for manufacturing piezoelectric element with ion exchange enhancement layer on insulated substrate |
| CN106291562A (en) * | 2015-05-30 | 2017-01-04 | 鸿富锦精密工业（深圳）有限公司 | Ultrasound wave sensor and manufacture method, ultrasound wave sensor array |
| CN206893630U (en) * | 2017-05-09 | 2018-01-16 | 成都泰声科技有限公司 | A kind of miniature directional ultrasonic transducer |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112250032A (en) * | 2019-07-22 | 2021-01-22 | 安徽奥飞声学科技有限公司 | Manufacturing method of MEMS structure |
| CN112250032B (en) * | 2019-07-22 | 2023-12-12 | 安徽奥飞声学科技有限公司 | Manufacturing method of MEMS structure |
| CN112452694A (en) * | 2020-09-23 | 2021-03-09 | 长江大学 | Multi-frequency piezoelectric miniature ultrasonic transducer unit, array and method |
| CN113182157A (en) * | 2021-04-27 | 2021-07-30 | 之江实验室 | Flexible piezoelectric ultrasonic transducer |
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Application publication date: 20170718 |