CN202719846U - A silicon wafer drying furnace for preventing metal ion pollution - Google Patents
A silicon wafer drying furnace for preventing metal ion pollution Download PDFInfo
- Publication number
- CN202719846U CN202719846U CN2012203156446U CN201220315644U CN202719846U CN 202719846 U CN202719846 U CN 202719846U CN 2012203156446 U CN2012203156446 U CN 2012203156446U CN 201220315644 U CN201220315644 U CN 201220315644U CN 202719846 U CN202719846 U CN 202719846U
- Authority
- CN
- China
- Prior art keywords
- quartz
- silicon wafer
- silicon chip
- metal ion
- furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 143
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 142
- 239000010703 silicon Substances 0.000 title claims abstract description 142
- 238000001035 drying Methods 0.000 title claims abstract description 47
- 229910021645 metal ion Inorganic materials 0.000 title claims abstract description 32
- 239000010453 quartz Substances 0.000 claims abstract description 56
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 56
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 38
- 238000010438 heat treatment Methods 0.000 claims abstract description 30
- 239000007789 gas Substances 0.000 claims abstract description 25
- 230000007246 mechanism Effects 0.000 claims abstract description 23
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 19
- 230000001681 protective effect Effects 0.000 claims abstract description 11
- 239000011347 resin Substances 0.000 claims abstract description 8
- 229920005989 resin Polymers 0.000 claims abstract description 8
- 230000005540 biological transmission Effects 0.000 claims description 10
- 238000009413 insulation Methods 0.000 claims description 8
- 239000002033 PVDF binder Substances 0.000 claims description 4
- 239000000835 fiber Substances 0.000 claims description 4
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 3
- 230000000630 rising effect Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 claims 30
- 230000007723 transport mechanism Effects 0.000 claims 1
- 210000002268 wool Anatomy 0.000 claims 1
- 239000002184 metal Substances 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 4
- 238000011109 contamination Methods 0.000 abstract 3
- 230000008676 import Effects 0.000 description 10
- 238000013461 design Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000003708 ampul Substances 0.000 description 4
- 230000032683 aging Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005265 energy consumption Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000002937 thermal insulation foam Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000013519 translation Methods 0.000 description 2
- 230000007306 turnover Effects 0.000 description 2
- 239000002912 waste gas Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011267 electrode slurry Substances 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Drying Of Solid Materials (AREA)
Abstract
The utility model discloses a silicon chip drying oven capable of preventing metal ion contamination. The silicon chip drying oven comprises an oven body, a heating device arranged in the oven body, a silicon chip conveying device and a control unit; the internal wall of the furnace body is formed by quartz plates; the heating device comprises a quartz tube far infrared heating lamp; the silicon chip conveying device comprises a plurality of silicon chip flatly placed rails and corresponding conveying mechanisms; the conveying mechanisms are reciprocating stepping mechanisms; and the hearth of the oven is further filled with protective gas. As the internal wall of the drying oven which is in contact with the silicon chip is made of quartz material, the contact between the silicon chip and metal parts is avoided; and as the reciprocating stepping conveying mechanisms are adopted, the difficult problem that the common chain type metal screen belt can easily cause metal ion contamination or the resin screen belt is fast cured under high temperature; and while in the drying process, the silicon chip is always protected by high purity nitrogen, thus, the secondary contamination of the silicon chip caused by the metal ion can be prevented.
Description
Technical field
The utility model relates to a kind of manufacture of solar cells equipment, refers more particularly to the silicon chip drying stove of the anti-metal ion pollution of a kind of energy.
Background technology
The conversion efficiency of present solar cell constantly promotes, in the manufacture of solar cells process, selective diffusion process has become battery production producer emphasis research and development field, in the process route of the selective diffusion of various realizations, adopt the one-time dispersing method in printing phosphorus source with low cost, easily batch production is of greatest concern, the silicon chip that is completed for printing needs to dry operation in drying oven, China Patent No. is ZL200620073300.3's, name is called the utility model patent of solar cell substrate drying oven, a kind of solar cell substrate drying oven is disclosed, being used for will be through the colloid of the electrode slurry on the solar cell substrate that prints electrode, moisture is discharged, and comprises a frame; One body of heater is located on the frame, and partially; One group of heater is located in the burner hearth of body of heater; A pair of driving and driven roller, hub setting is in the both upper ends thereof of frame respectively; One lace curtaining is nested with on driving and driven roller; One power drive mechanism is located at one of frame end, and is close to drive roll, links with the drive roll transmission; One is used for making described burner hearth to obtain the wind path mechanism of circulating air, is located on the lower side side of frame; One is used for the electric control box of control heater, power transmission, the work of wind path mechanism, be installed on the body of heater, although this drying oven volume is little, production efficiency is higher, can guarantee that basal plate heated is even, but metal ion but can't be eliminated and makes silicon chip cause easily secondary pollution to make silicon chip form the photo-generated carrier complex centre in the drying course, reduced the actual light photoelectric transformation efficiency of battery
The utility model content
The utility model solves mainly that common silicon chip drying oven can't eliminate that metal ion produces secondary pollution to silicon chip and the drying oven energy consumption is large, the easy aging technical problem of resin guipure, and the anti-metal ion pollution of a kind of energy and energy-conservation silicon chip drying stove are provided.
In order to solve the technical problem of above-mentioned existence, the utility model mainly is to adopt following technical proposals:
The silicon chip drying stove of a kind of anti-metal ion pollution of the present utility model is used for the oven dry operation of silicon chip of solar cell, and described drying oven is located on the framework, and comprise body of heater, be located at heater, silicon chip conveyer and control module in the body of heater, wherein:
Body of heater, comprise inside panel and stove outside plate, cavity forms thermal insulation layer between inside panel and the stove outside plate, described inside panel is quartz plate, be provided with the outlet of silicon chip import and silicon chip in the body of heater both sides, be provided with protective gas air inlet and exhaust outlet at the body of heater top, be provided with the opening corresponding with silicon wafer conveying mechanism at bottom of furnace body;
Heater comprises that some outer walls are the Far-infrared Heating lamp of quartz ampoule;
Conveying device, comprise some silicon chip horizontal tracks that are arranged in parallel and corresponding silicon wafer conveying mechanism, described each silicon chip horizontal track comprises that two parallel and contour quartz that are located in the stove place bars and be located at respectively the import of body of heater silicon chip and silicon chip outlet and be in the described quartzy some quartzy placement pieces of placing on the bar extension line, the end face of quartzy placement bar and quartzy silicon chip placed side of placing the contour formation level of end face of piece, spacing and silicon chip width match between two quartzy placement bars;
Control module connects each cylinder of silicon wafer conveying mechanism, heater infrared lamp and shield gas flow rate control device, monitoring and control silicon chip transfer rate, oven dry heating power, shield gas flow rate and air curtain gas flow.
All parts that contact with silicon chip such as inside panel, heating fluorescent tube, silicon chip are shelved the plane materiel material in the drying oven
Adopt quartz material to make Deng all, avoided contacting of silicon chip and metal parts, also avoided the metal parts to exist
Volatilize the possibility of metal ion under the high temperature, thereby avoided the secondary pollution of metal ion to silicon chip, simultaneously,
In drying course, also be blown into high pure nitrogen in the burner hearth, silicon chip is in the protection of high pure nitrogen also all the time
In time discharge the slurry volatile matter, prevent from interspersing among airborne metal ion silicon chip surface is caused secondary pollution;
The thermal insulation layer of body of heater makes more energy-conserving and environment-protective of drying oven, and the furnace chamber temperature is more stable, the heating, drying quality of silicon chip
Better, and many drying channels and deposit design, saved furnace space, reduced energy consumption, make operating efficiency
Obtained promoting at double.
As preferably, described silicon wafer conveying mechanism is reciprocating type stepping mechanism, the quartzy driven rod that comprises level, horizontal air cylinder, lift cylinder and horizontal guide rail, described horizontal guide rail and mobile cylinder are located on the described framework, horizontal guide rail and described silicon chip are placed parallel track, horizontal guide rail is provided with can be along the adjustable support of horizontal guide rail slip, the piston rod of horizontal air cylinder is connected with described support, described lift cylinder is located at respectively the two ends of support, the piston rod of lift cylinder is connected with the both ends of described quartzy driven rod respectively, quartzy driven rod can be by the effect vertical lift of lift cylinder, quartzy driven rod is located at described quartzy the placement between the bar, the length of quartzy driven rod is greater than the length of body of heater, the shaft upper surface of quartzy driven rod is higher than the quartzy apical side height of placing bar during rising, the shaft of quartzy driven rod is in quartzy below of placing the bar end face during decline, transmission mechanism adopts reciprocating type step-by-step method, the metal mesh belt that has solved common chain type drying oven employing causes metal ion pollution or adopts at high temperature aging fast problem of resin guipure, and the use of horizontal air cylinder and lift cylinder, control and structure have then been simplified, easy to make, with low cost.
As preferably, described quartzy top of placing bar is provided with along the quartzy evenly distributed some boss of bar axis direction of placing, described two quartzy boss of placing bar are symmetrical arranged, boss consists of several silicon chip heating stations, the piston rod stroke of described horizontal air cylinder equates with the spacing of described silicon chip heating station, evenly distributed boss forms the heating station that keeps flat of silicon chip, and the silicon chip placement is steady and contact-making surface is less, is conducive to improve the dries quantity of silicon chip.
As preferably, the described quartzy piece end face outer of placing is provided with and places the piece integrative-structure and place the parallel positioning strip of bar with quartz, described positioning strip medial surface is the inclined-plane, accurate positioning when positioning strip can make silicon chip place in import department, be difficult for dislocation in the drying course and cause the silicon chip landing, the inclined-plane of passage inboard makes things convenient for the placement of silicon chip.
As preferably, the opening part of the silicon chip import of described body of heater both sides, silicon chip exit and bottom of furnace body is equipped with air curtain, described air curtain is the quartz ampoule air curtain of adjustable flow, in body of heater and the extraneous place that communicates, be designed with the air curtain of adjustable air volume, burner hearth is hedged off from the outer world, prevent that the metal ion in the outside air from causing secondary pollution to silicon chip, can prevent that also the slurry volatile matter in the burner hearth from overflowing, and causes environmental pollution.
As preferably, described stove outside plate is the PVDF resin plate, and described thermal insulation layer is high purity quartz fiber heat insulation foam, and quartz fibre heat insulation foam heat-insulating property well can not produce metal ion pollution again, and the high temperature resistant and excellent in stability of PVDF resin plate.
As preferably; described protective gas is high pure nitrogen; described air inlet is located at the silicon chip port of export; described exhaust outlet is located at the silicon chip entrance point; described air inlet is provided with adjustable high pure nitrogen flow regulator; the high pure nitrogen of counter-flow designs flows to; effectively take away the waste gas that drying course produces; the high pure nitrogen that touches near the silicon chip of outlet is purer; silicon chip is in effective protection of high pure nitrogen all the time; prevent from interspersing among airborne metal ion silicon chip surface is caused secondary pollution, adjustable high pure nitrogen flow regulator can guarantee that the protective gas pressure in the burner hearth is in certain pressure all the time.
As preferably; turnover gas pipeline at protective gas is provided with heat exchanger; described heat exchanger is connected with outlet pipe with the admission line of protective gas respectively; inlet and outlet piping at protective gas is designed with heat exchanger; the heat that can absorb in the high-temp waste gas of discharge comes heating air inlet gas, has improved the temperature of air inlet gas, has saved the energy; also reduce the temperature fluctuation in the burner hearth, improved the dries quantity of silicon chip.
As preferably, in burner hearth, also be provided with thermocouple, described thermocouple is electrically connected with control module, thermocouple detects the temperature in the burner hearth and delivers to control module, silicon controlled toggle is regulated the power of heating tube in the PID mode, temperature in the burner hearth is reached and remains on 100 ℃～350 ℃ setting bake out temperature.
The beneficial effects of the utility model are: all parts that contact with silicon chip all adopt quartz in the drying oven
Material is made, and has avoided contacting of silicon chip and metal parts, has also avoided the metal parts at high temperature to volatilize the possibility of metal ion; The silicon chip transmission mechanism adopts reciprocating type step-by-step method, and the metal mesh belt that has solved common chain type drying oven employing produces metal ion pollution or adopts an at high temperature aging fast difficult problem of resin guipure; In drying course, also be blown into clean high pure nitrogen in the burner hearth, silicon chip is in the protection of high pure nitrogen all the time, avoided interspersing among airborne metal ion silicon chip surface has been caused secondary pollution; Many silicon chip drying passages and deposit design, saved furnace space, reduced energy consumption, production efficiency is improved.
Description of drawings
Fig. 1 is silicon chip jack-up status architecture schematic diagram of the present utility model.
Fig. 2 is the schematic side view of Fig. 1.
Fig. 3 is silicon chip laying state structural representation of the present utility model.
Fig. 4 is the schematic side view of Fig. 3.
1. silicon chips among the figure, 2. framework, 3. body of heater, 4. inside panel; 5. stove outside plate, 6. thermal insulation layer, 7. silicon chip import, 8. silicon chip outlet; 9. protective gas air inlet, 10. exhaust outlet, 11. Far-infrared Heating lamps, the 12. quartzy bars of placing; 13. quartzy piece, 14. quartzy driven rods, 15. horizontal air cylinders placed; 16. lift cylinder, 17. horizontal guide rails, 18. supports; 19. boss, 20. air curtains, 21. thermocouples.
The specific embodiment
Below by embodiment, and by reference to the accompanying drawings, the technical solution of the utility model is described in further detail.
Embodiment: the silicon chip drying stove of a kind of anti-metal ion pollution of present embodiment, be used for the oven dry operation of silicon chip of solar cell 1, as depicted in figs. 1 and 2, drying oven is placed on the framework 2, comprise body of heater 3, be installed in heater, silicon chip conveyer and control module in the body of heater, wherein:
Body of heater, comprise inside panel 4 and stove outside plate 5, inside panel is quartz plate, the stove outside plate is the PVDF resin plate, stuffed heat insulated layer 6 in the cavity between inside panel and the stove outside plate, thermal insulation layer is high purity quartz fiber heat insulation foam, is designed with silicon chip import 7 and silicon chip outlet 8 in the body of heater both sides, be provided with the opening corresponding with silicon wafer conveying mechanism at bottom of furnace body, the quartz ampoule air curtain 20 of adjustable flow all is installed at silicon chip import and export and furnace bottom opening part; In the body of heater top design high pure nitrogen air inlet 9 and exhaust outlet 10 are arranged, the air inlet design is at the outlet side of silicon chip, the exhaust outlet design is at the silicon chip inlet side, at air inlet adjustable high pure nitrogen flow regulator is installed, be designed with heat exchanger in high pure nitrogen turnover feed channel, thermocouple 21 with quartz sleeve also is installed in burner hearth, and thermocouple is electrically connected with control module;
Heater is installed in the top of silicon chip conveyer in the stove, comprises the Far-infrared Heating lamp that three outer walls are quartz ampoule;
Conveying device, comprise silicon chip horizontal track and silicon wafer conveying mechanism, silicon chip horizontal track comprises that two parallel and contour quartz that are installed in the stove place bars 12 and be installed in respectively the import of body of heater silicon chip and silicon chip outlet and be in the quartzy quartz placement piece 13 of placing on the bar extension line, the quartzy end face and quartzy silicon chip placed side of placing the contour formation level of end face of piece of placing bar, two quartzy places that the width of spacing and silicon chip matches between the bar;
Control module connects each cylinder of silicon wafer conveying mechanism, heater infrared lamp and shield gas flow rate control device, monitoring and control silicon chip transfer rate, fire box temperature, oven dry heating power, shield gas flow rate and air curtain gas flow.
Silicon wafer conveying mechanism is reciprocating type stepping mechanism, comprises horizontal quartzy driven rod 14, horizontal air cylinder
15, lift cylinder 16 and horizontal guide rail 17, horizontal guide rail and horizontal air cylinder are installed on the framework, horizontal guide rail and silicon chip horizontal parallel track, being designed with on the horizontal guide rail can be along the adjustable support 18 of horizontal guide rail slip, piston rod part and the support of horizontal air cylinder are fixed, lift cylinder is separately fixed at the two ends of support, the piston rod of lift cylinder is fixed with the both ends of quartzy driven rod respectively, quartzy driven rod can be by the piston rod effect of lift cylinder vertical lift, it is middle and parallel with quartz placement bar that quartzy driven rod design is placed bar at quartz, the length of quartzy driven rod is greater than the length of body of heater, the shaft upper surface of quartzy driven rod is higher than the quartzy apical side height of placing bar during jacking, and the shaft of quartzy driven rod is in quartzy below of placing the bar end face during decline; The top design of placing bar at quartz has along the quartzy evenly distributed some boss 19 of bar axis direction of placing, two quartzy boss of placing on the bar are symmetrical arranged, boss consists of the silicon chip heating station, quartzy longitudinal pitch and the silicon chip of placing piece matches, and the piston rod stroke of horizontal air cylinder is equal to the spacing of heating station; Place piece end face outer at quartz and be designed with quartz and place the piece integrative-structure and place the parallel positioning strip of bar with quartz, the positioning strip medial surface is the inclined-plane.
During use, at first the silicon chip that prints is placed on the piece by the quartz that the quartz fork is placed on body of heater silicon chip import department; Turn on the Far-infrared Heating lamp heating in the burner hearth, thermocouple in the burner hearth detects in real time fire box temperature and is electrically connected with control module, silicon controlled toggle is regulated the power of heating tube in the PID mode, temperature in the burner hearth is reached and remain on 300 ℃ setting bake out temperature, open the high pure nitrogen flow regulator of air inlet and regulate charge flow rate, make and be full of high pure nitrogen in the burner hearth and keep malleation in the burner hearth, the air curtain of silicon chip entrance end and bottom opening is hedged off from the outer world burner hearth, prevents that the external world from polluting silicon chip in the burner hearth with the air of metal ion; Open lift cylinder, the piston rod of lift cylinder protrudes upward and drives quartzy driven rod and rises, and the silicon chip to be heated of jack-up silicon chip import department also makes silicon chip break away from the quartzy piece of placing, and this moment, silicon chip was shelved on the quartzy driven rod; Open horizontal air cylinder, the horizontal air cylinder piston rod ejects the promotion support and slides along horizontal guide rail, because the interval equates before and after horizontal air cylinder piston rod stroke and the boss, thereby make heating station of quartzy driven rod translation, silicon chip enter the interior corresponding heating station of drying oven to begin to dry; Close lift cylinder, the retraction that resets of lift cylinder piston rod, driving quartzy driven rod descends, the quartz that silicon chip on the quartzy driven rod drops to down in the burner hearth is thereupon placed on the bar boss, quartzy driven rod continues to descend until the top is lower than the quartzy end face of placing bar, as shown in Figure 3 and Figure 4, silicon chip breaks away from quartzy driven rod and is shelved on quartzy the placement proceeds oven dry on the bar boss, the high pure nitrogen reverse flow of cleaning this moment is crossed silicon chip surface and moisture and metal ion that drying course produces is taken away, and discharges by exhaust outlet at last; Close horizontal air cylinder, the retraction that resets of horizontal air cylinder piston rod drives support along the horizontal guide rail return, makes accordingly heating station of the reverse translation of quartzy driven rod, gets back to initial position and waits for, prepares the beginning in next transmission cycle; Repeat the c-f step, all and reciprocal, so that silicon chip moves to the port of export by station of station of quartzy driven rod from the drying oven entrance point, finish whole drying course, the moving period of silicon chip is 12 seconds; The quartz that is moved to the silicon chip exit when the silicon chip after the oven dry is placed on the piece, then by vacuum WAND silicon chip is removed and is placed in the quartz boat used for diffusion.
More than explanation is not that the utility model has been done restriction; the utility model also is not limited only to giving an example of above-mentioned explanation; the variation that those skilled in the art make in essential scope of the present utility model, retrofit, increase or replace, all should be considered as protection domain of the present utility model.
Claims (9)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012203156446U CN202719846U (en) | 2012-06-28 | 2012-06-28 | A silicon wafer drying furnace for preventing metal ion pollution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012203156446U CN202719846U (en) | 2012-06-28 | 2012-06-28 | A silicon wafer drying furnace for preventing metal ion pollution |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202719846U true CN202719846U (en) | 2013-02-06 |
Family
ID=47621668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012203156446U Withdrawn - After Issue CN202719846U (en) | 2012-06-28 | 2012-06-28 | A silicon wafer drying furnace for preventing metal ion pollution |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202719846U (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102809270A (en) * | 2012-06-28 | 2012-12-05 | 杭州大和热磁电子有限公司 | Silicon wafer drying furnace capable of preventing metal ion pollution and silicon wafer drying method |
| CN103302060A (en) * | 2013-06-18 | 2013-09-18 | 无锡市翔隆机械科技有限公司 | Reciprocating type water cutting device |
| CN103673590A (en) * | 2013-12-06 | 2014-03-26 | 湖北大清捷能环保窑炉有限公司 | Honeycomb type SCR denitration catalyst calcining furnace and method for drying SCR denitration catalyst |
| CN107471620A (en) * | 2017-09-30 | 2017-12-15 | 福清市融城益峰机械有限公司 | The Wrapping formed device of fiber conduit |
| CN108803724A (en) * | 2018-07-11 | 2018-11-13 | 武汉理工大学 | A kind of control system and method for micro-nano quartz crystal vacuum oven |
| CN114594665A (en) * | 2022-05-10 | 2022-06-07 | 上海芯源微企业发展有限公司 | Tray cover, control method thereof and baking equipment |
| CN114927447A (en) * | 2022-04-18 | 2022-08-19 | 通威太阳能（安徽）有限公司 | Silicon chip transfer mechanism and photovoltaic cell production system |
| EP4067797A1 (en) * | 2021-01-27 | 2022-10-05 | Cefla Societa' Cooperativa | Apparatus and method for the drying/curing of chemical products |
| WO2023051074A1 (en) * | 2021-09-29 | 2023-04-06 | 禄丰隆基硅材料有限公司 | Drying mechanism and air shower drying device having same |
-
2012
- 2012-06-28 CN CN2012203156446U patent/CN202719846U/en not_active Withdrawn - After Issue
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102809270A (en) * | 2012-06-28 | 2012-12-05 | 杭州大和热磁电子有限公司 | Silicon wafer drying furnace capable of preventing metal ion pollution and silicon wafer drying method |
| CN102809270B (en) * | 2012-06-28 | 2014-11-05 | 杭州大和热磁电子有限公司 | Silicon wafer drying furnace capable of preventing metal ion pollution and silicon wafer drying method |
| CN103302060A (en) * | 2013-06-18 | 2013-09-18 | 无锡市翔隆机械科技有限公司 | Reciprocating type water cutting device |
| CN103302060B (en) * | 2013-06-18 | 2015-02-18 | 无锡市翔隆机械科技有限公司 | Reciprocating type water cutting device |
| CN103673590A (en) * | 2013-12-06 | 2014-03-26 | 湖北大清捷能环保窑炉有限公司 | Honeycomb type SCR denitration catalyst calcining furnace and method for drying SCR denitration catalyst |
| CN107471620A (en) * | 2017-09-30 | 2017-12-15 | 福清市融城益峰机械有限公司 | The Wrapping formed device of fiber conduit |
| CN108803724A (en) * | 2018-07-11 | 2018-11-13 | 武汉理工大学 | A kind of control system and method for micro-nano quartz crystal vacuum oven |
| EP4067797A1 (en) * | 2021-01-27 | 2022-10-05 | Cefla Societa' Cooperativa | Apparatus and method for the drying/curing of chemical products |
| WO2023051074A1 (en) * | 2021-09-29 | 2023-04-06 | 禄丰隆基硅材料有限公司 | Drying mechanism and air shower drying device having same |
| CN114927447A (en) * | 2022-04-18 | 2022-08-19 | 通威太阳能（安徽）有限公司 | Silicon chip transfer mechanism and photovoltaic cell production system |
| CN114594665A (en) * | 2022-05-10 | 2022-06-07 | 上海芯源微企业发展有限公司 | Tray cover, control method thereof and baking equipment |
| CN114594665B (en) * | 2022-05-10 | 2022-08-23 | 上海芯源微企业发展有限公司 | Tray cover, control method thereof and baking equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102809270B (en) | Silicon wafer drying furnace capable of preventing metal ion pollution and silicon wafer drying method | |
| CN202719846U (en) | A silicon wafer drying furnace for preventing metal ion pollution | |
| CN107631603B (en) | Silicon wafer drying furnace | |
| CN203846100U (en) | Movable type multi-station deposition furnace used for graphene deposition | |
| CN102030464B (en) | Continuous production equipment of vacuum glass | |
| CN106152772A (en) | A single box track type wood veneer drying device | |
| CN207622447U (en) | Silicon chip drying stove | |
| CN204362929U (en) | A kind of energy-saving tobacco flue-curing house of temperature-controllable | |
| CN202254787U (en) | Heating device with high temperature heat compensation and tunnel furnace | |
| CN203173850U (en) | Deaminization furnace for preparing vanadium pentoxide from ammonium vanadate | |
| CN201858873U (en) | Five-tube silicon wafer conveying device | |
| CN107880905A (en) | A new type of vertical flue structure for coke oven combustion chamber | |
| CN201852420U (en) | Photovoltaic solar silicon plate drying furnace | |
| CN107228570A (en) | A kind of method of anode-baking furnace UTILIZATION OF VESIDUAL HEAT IN | |
| CN214470008U (en) | Solar cell nitrogen protection tunnel furnace | |
| CN204255067U (en) | For the sintering furnace of solar battery sheet | |
| CN212086156U (en) | Crystalline silicon solar cell light decay test device | |
| CN201858869U (en) | Mesh-belt absence type sintering furnace for silicon cells | |
| CN207738684U (en) | Novel vertical flue structure of coke oven combustion chamber | |
| CN203657521U (en) | Kiln tail gas energy-saving emission-reduction treatment device | |
| CN209877614U (en) | Automatic sintering furnace of accuse temperature | |
| CN115950249A (en) | An energy-saving high-temperature kiln with gas-electric hybrid heating | |
| CN201706896U (en) | Fast cooling and waste heat utilization device for sintered brick kiln | |
| CN203980849U (en) | A kind of bottle decoration firing waste heat secondary recovery is utilized structure | |
| CN107966015B (en) | Sintering furnace capable of suspending and drying silicon wafers |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20130206 Effective date of abandoning: 20141105 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20130206 Effective date of abandoning: 20141105 |
|
| RGAV | Abandon patent right to avoid regrant |