CN202717840U - Continuous sputtering coating equipment - Google Patents
Continuous sputtering coating equipment Download PDFInfo
- Publication number
- CN202717840U CN202717840U CN 201220306687 CN201220306687U CN202717840U CN 202717840 U CN202717840 U CN 202717840U CN 201220306687 CN201220306687 CN 201220306687 CN 201220306687 U CN201220306687 U CN 201220306687U CN 202717840 U CN202717840 U CN 202717840U
- Authority
- CN
- China
- Prior art keywords
- power supply
- sputtering coating
- radio
- sputter
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The utility model relates to continuous sputtering coating equipment. According to the continuous sputtering coating equipment, a film unit is deposited on a substrate. The continuous sputtering coating equipment comprises a plurality of sputtering coating devices, wherein each sputtering coating device comprises a sputtering coating unit and a power supply system; the sputtering coating units of the sputtering coating devices are connected in parallel; each sputtering coating unit is provided with a cavity and a target material which is arranged in a chamber of the cavity and is opposite to the substrate; the power supply systems of the sputtering coating devices are provided with direct-current power supplies, radio-frequency power supplies and matchers which integrate the direct-current power supplies and the radio-frequency power supplies; and the matchers can supply power to the sputtering coating units, so that plasma is formed in the chambers of the sputtering coating units. Due to the adoption of the mode, a film can be deposited on the substrate continuously, and the sputtering coating quality and sputtering coating efficiency are high.
Description
Technical field
The utility model relates to a kind of sputtering equipment, particularly relates to a kind of continous way sputtering equipment that is integrated with direct supply and radio-frequency power supply.
Background technology
Sputtering equipment in the past comprises haply one and has the cavity of airtight chamber, a target that is installed in this chamber, and a power supply unit, and the substrate that sputter is accepted in preparation then is to send in the chamber of this cavity, and corresponding with this target.When power supply unit applies a volts DS between the two poles of the earth (namely this target and this substrate), be commonly referred to dc sputtering, this dc sputtering not only equipment cost is lower, also can produce higher deposition, but shortcoming is to make sputter to the substrate with isolator characteristic, so the scope of using is restricted.If power supply unit provides radio-frequency power supply, and when installing a metal electrode additional at the back side of the target of cavity, be commonly referred to as the radio frequency sputter, this radio frequency sputter can produce high-quality film, and can deposit for metal, semi-conductor and isolator, so the sputter quality is better, exercisable field is wider, but shortcoming is that sedimentation rate is slow, equipment cost is higher.
Because the sputtering equipment that had single chamber and can only select single power supply is in use, can't take into account high quality and high deposition rate in the past, and can only be on substrate when sputter the film of deposited monolayers, in the use some inconvenience.
Summary of the invention
It is a kind of easy to use that the purpose of this utility model is to provide, and with the continous way sputtering equipment of better sputter quality and sputter efficient.
Continous way sputtering equipment of the present utility model, in a continuous manner at film unit of a substrate deposition, and comprise: several sputtering apparatuss, each sputtering apparatus comprises a sputter unit, and power system that this sputter unit power supply is provided, the sputter unit phase of described sputtering apparatus also connects, and each sputter unit has a cavity, and the target that is oppositely arranged in chamber that is installed in this cavity and with this substrate, the power system of described sputtering apparatus all has a DC power supply, a radio-frequency power supply supply, and matching box of integrating this DC power supply and this radio-frequency power supply supply, this matching box can provide this sputter unit power supply, and forms the electricity slurry in the chamber of this sputter unit.
Continous way sputtering equipment of the present utility model, the power system of described sputtering apparatus also all have a radio frequency isolation wave filter that is connected between this DC power supply and this matching box and is used for filtering radio-frequency current.
The beneficial effects of the utility model are: the sputter unit by described sputtering apparatus and connect, deposit film on this substrate continuously, and the design of the power system of described sputtering apparatus, can integrate direct supply and radio-frequency power supply, make this continous way sputtering equipment with better sputter quality and sputter efficient.
Description of drawings
Fig. 1 is the assembly relativeness synoptic diagram of a preferred embodiment of the utility model continous way sputtering equipment;
Fig. 2 is a partial schematic diagram of this preferred embodiment, shows separately the arrangement of components relation of a sputtering apparatus of this continous way sputtering equipment.
Embodiment
Below in conjunction with drawings and Examples the utility model is elaborated.
Consult Fig. 1,2, a preferred embodiment of the utility model continous way sputtering equipment can be done the processing of continuous sputter to a substrate 1, and at film unit 10 of this substrate 1 deposition, and this film unit 10 is comprised of several films.And this sputtering equipment comprises several sputtering apparatuss 2, and each sputtering apparatus 2 comprises a sputter unit 21, and the power system 22 that these sputter unit 21 power supplys are provided.The sputter unit 21 of described sputtering apparatus 2 also connects mutually, and the horizontal that the mode that connects can be as shown in Figure 1, also can be rectilinear and connects, perhaps around the cyclic formula of a central point and connect.
The sputter unit 21 of the described sputtering apparatus 2 of present embodiment all has a cavity 211 with a chamber 212, and the target 213 in chamber that is installed in this cavity 211 212, this substrate 1 is the chamber 212 that sequentially is admitted to and sends the sputter unit 21 of described sputtering apparatus 2, and is oppositely arranged with this target 213.
The power system 22 of the described sputtering apparatus 2 of present embodiment all has a DC power supply 221, a radio-frequency power supply supply 222, a radio frequency isolation wave filter 223 that is connected with this DC power supply 221, and matching box 224 that connects this radio frequency isolation wave filter 223 and this radio-frequency power supply supply 222, in design, the utility model can omit this radio frequency isolation wave filter 223.
This matching box 224 of present embodiment can provide this sputter unit 21 power supplys, and the chamber 212 interior formation electricity slurries in this sputter unit 21, major function is to adjust the impedance of the electric current that offers this sputter unit 21, namely integrates the direct supply that is produced by this DC power supply 221 and the radio frequency AC power that is produced by this radio-frequency power supply supply 222.The purpose of integrating is to suppress the formation of electric arc; because electric arc is a kind of partial discharge phenomenon of very high currents density; can cause the great infringement in sputter unit 21 of this substrate 1 and described sputtering apparatus 2; present embodiment utilizes this matching box 224, and moment is closed this DC power supply 221 and this radio-frequency power supply supply 222 simultaneously; can avoid the generation of arc phenomenon; if but under the hard arc environment, close this DC power supply 221; and this radio-frequency power supply supply 222 is still during continued power; may cause great infringement; so present embodiment sets up to filter this radio frequency isolation wave filter 223 of radio-frequency current in this matching box 224 and 221 of this DC power supply; can protect this DC power supply 221, be subject to the injury of radio frequency power to avoid this DC power supply 221.
Specifically, this matching box 224 of present embodiment may detect the electric arc of time microsecond (sub-μ sec) scope, and in time cut off the power supply of this DC power supply 221 and this radio-frequency power supply supply 222 according to user fine setting and processing procedure time needs, to eliminate electric arc, after the electric arc disappearance, restart again the power supply of this DC power supply 221 and this radio-frequency power supply supply 222, in order between this substrate 1 and this target 213, regenerate the electricity slurry.
When the continous way sputtering equipment of present embodiment in use, this substrate 1 is sequentially to enter in the chamber 212 of sputter unit 21 of adjacent sputtering apparatus 2, and sequentially accept continuous sputter processing with deposit film, when this substrate 1 enters the chamber 212 of sputter unit 21 of described sputtering apparatus 2 when interior, the control of the matching box 224 by this power system 22, can provide suitable power supply to this sputter unit 21, to carry out every sputter processing, when the while, the chamber 212 inner generations in the sputter unit 21 of described sputtering apparatus 2 approached the electric arc of setting threshold value, close this DC power supply 221 and this radio-frequency power supply supply 222 by 224 moments of this matching box, and reach the purpose that suppresses electric arc.
Because present embodiment is integrated the radio-frequency power supply that direct supply that this DC power supply 221 produces and this radio-frequency power supply supply 222 produce, so this design of present embodiment not only can be processed the sputter that this substrate 1 is always changed, can also improve the limited problem of use range that dc sputtering produces, also can change the slow shortcoming of sedimentation velocity that the radio frequency sputter produces.Therefore, this continous way sputtering equipment of the utility model not only structure innovation, can always change for substrate 1 and carry out sputter processing, also with better sputter quality and sputter efficient.
Claims (2)
1. continous way sputtering equipment, serially at film unit of a substrate deposition, comprise: several sputtering apparatuss, each sputtering apparatus comprises a sputter unit, and power system that this sputter unit power supply is provided, the sputter unit phase of described sputtering apparatus also connects, and each sputter unit has a cavity with a chamber, and the target that is oppositely arranged in chamber that is installed in this cavity and with this substrate; It is characterized in that:
The power system of described sputtering apparatus all has a DC power supply, a radio-frequency power supply supply, and one is integrated this DC power supply and this radio-frequency power supply supply and provides this sputter unit power supply to form simultaneously the matching box of electricity slurry in the chamber of described sputter unit.
2. continous way sputtering equipment according to claim 1, it is characterized in that: the power system of described sputtering apparatus also all has a radio frequency isolation wave filter that is connected between this DC power supply and this matching box and is used for filtering radio-frequency current.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220306687 CN202717840U (en) | 2012-06-28 | 2012-06-28 | Continuous sputtering coating equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220306687 CN202717840U (en) | 2012-06-28 | 2012-06-28 | Continuous sputtering coating equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202717840U true CN202717840U (en) | 2013-02-06 |
Family
ID=47619668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220306687 Expired - Fee Related CN202717840U (en) | 2012-06-28 | 2012-06-28 | Continuous sputtering coating equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202717840U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106637117A (en) * | 2016-12-21 | 2017-05-10 | 蚌埠玻璃工业设计研究院 | High-efficiency preparation method for nitrogen-doped titanium dioxide film |
-
2012
- 2012-06-28 CN CN 201220306687 patent/CN202717840U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106637117A (en) * | 2016-12-21 | 2017-05-10 | 蚌埠玻璃工业设计研究院 | High-efficiency preparation method for nitrogen-doped titanium dioxide film |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108028167B (en) | RF power transfer with approximately sawtooth pulses | |
| JP6800216B2 (en) | RF power supply control for substrate processing | |
| KR101677748B1 (en) | Pulse plasma apparatus and method for operating the same | |
| JP2007266533A5 (en) | ||
| WO2012054306A3 (en) | Pulse mode capability for operation of an rf/vhf impedance matching network with 4 quadrant, vrms/irms responding detector circuitry | |
| JP2014049541A (en) | Thin film manufacturing device and electrode voltage regulating method thereof | |
| CN105206494B (en) | The impedance matching methods of pulse radiation frequency power supply and the matching process of plasma apparatus | |
| RU2006143209A (en) | MAGNETRON SPRAYING METHOD AND MAGNETRON SPRAYING APPARATUS | |
| WO2011088156A3 (en) | Phase-modulated rf power for plasma chamber electrode | |
| TW200625396A (en) | Capacitively coupled RF-plasma reactor | |
| TW200845183A (en) | Plasma processing apparatus of substrate and plasma processing method thereof | |
| CN109518144A (en) | Isochronous controller for high impulse magnetron sputtering | |
| JPWO2012095961A1 (en) | Plasma device | |
| CN104426541B (en) | A kind of phase-locked loop circuit and method of spread-spectrum control | |
| CN202717840U (en) | Continuous sputtering coating equipment | |
| WO2008102738A1 (en) | Vacuum processing apparatus and film forming method using vacuum processing apparatus | |
| CN103035466A (en) | Precleaning method and plasma device | |
| KR20130062261A (en) | Sputtering device | |
| WO2013052392A3 (en) | Inverter line filter with additional dissipative high pass filter for dynamic break operation | |
| CN107452589A (en) | Plasma processing apparatus and method of plasma processing | |
| CN108271308A (en) | A kind of method that plasma is lighted in inductance coupling plasma processing device | |
| JP2019186099A (en) | Plasma processing machine | |
| CN104409309B (en) | Large area plasma processing means generates method with homogeneous plasma | |
| CN104342621B (en) | Magnetic field adjusting apparatus and plasma processing equipment | |
| TWI670382B (en) | Substrate processing apparatus and substrate processing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130206 Termination date: 20150628 |
|
| EXPY | Termination of patent right or utility model |