CN202631109U - Terahertz frequency range adjustable multi-stripe absorber - Google Patents
Terahertz frequency range adjustable multi-stripe absorber Download PDFInfo
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- CN202631109U CN202631109U CN 201220160081 CN201220160081U CN202631109U CN 202631109 U CN202631109 U CN 202631109U CN 201220160081 CN201220160081 CN 201220160081 CN 201220160081 U CN201220160081 U CN 201220160081U CN 202631109 U CN202631109 U CN 202631109U
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Abstract
The utility model discloses a terahertz frequency range adjustable multi-stripe wave absorber, comprising at least four wave absorber units which are arranged in matrix, wherein each wave absorber unit mainly comprises a silicon substrate, a metal layer, a medium body, a metal spider and a hollow field-character frame; the upper and lower surfaces of the metal layer are respectively sticked to the lower surface of the medium body and the upper surface of the silicon substrate; the hollow field-character frame is horizontally attached to the upper surface of the medium body; the metal spider is horizontally embedded in the middle part of the medium body; the plane at which the hollow field-character frame is arranged is in parallel with the plane at which the metal spider is arranged; the geometric centre of the metal spider is superposed with the geometric centre of the hollow field-character frame; and the central axis of two metal strips which form the metal spider is superposed with the central axis of four internal metal prongs which form the hollow field-character frame. The terahertz frequency range adjustable multi-stripe wave absorber can effectively improve the absorption peak quantity, and can accurately regulate and control each absorption peak position.
Description
Technical field
The utility model relates to the Terahertz Technology field, is specifically related to the adjustable many band wave-absorbers of a kind of Terahertz frequency range.
Background technology
THz ripple (THz wave) or be called THz ray (Terahertz ray) be meant frequency at 0.1THz to the electromagnetic wave of 10THz scope, wavelength is probably 0.03 to the 3mm scope, between microwave and infrared between.THz wave has very strong penetrability and very high security to a lot of dielectric materials and non-polar liquid; Particularly importantly; Terahertz wave band comprises abundant spectral information, and a large amount of organic molecules reveal intense absorption and dispersion characteristics at the Terahertz band table, therefore; Tera-hertz spectra not only can be used for light spectrum image-forming and the identification of material pattern, and can be used to carry out the material composition evaluation.
In the development and utilization of Terahertz Technology, detect terahertz signal and have very important meaning.Wherein terahertz detector then is the core devices of Terahertz system, and existing direct terahertz detector adopts the thermal effect detector mostly.Yet, because the thermal effect terahertz detector is a broadband response, therefore there is not frequency selectivity, be unfavorable for carrying out the spectrographic detection of high sensitivity and high spectral resolution.
Though the Terahertz wave-absorber is produced on the receiving surface of detector, can improves the detection sensitivity and the frequency selectivity of terahertz detector greatly.But, because the absorption peak quantity of existing Terahertz frequency range wave-absorber is no more than 2, be less than the characteristic absorption peak quantity of a lot of materials in the Terahertz frequency range, therefore be unfavorable for material is carried out highly sensitive spectrographic detection.
The utility model content
The utility model technical matters to be solved provides the adjustable many band wave-absorbers of a kind of Terahertz frequency range; It can effectively increase the absorption peak quantity of Terahertz frequency range wave-absorber, and can realize the accuracy controlling to each absorption peak position through the structural parameters that change wave-absorber.
For addressing the above problem; A kind of Terahertz frequency range that the utility model designed is adjustable is with wave-absorbers more; Comprise at least 4 absorber unit that are arranged, wherein each absorber unit is all mainly formed by containing silicon substrate, metal level, dielectric, metal spider and hollow field word frame.The upper and lower surfaces of metal level pastes with the lower surface of dielectric and the upper surface that contains silicon substrate respectively mutually, wherein dielectric be positioned at metal level directly over, contain silicon substrate be positioned at metal level under.Hollow field word frame level is attached at the upper surface of dielectric, and metal spider then level is embedded the middle part at dielectric, word frame plane of living in, hollow field and metal spider plane parallel of living in.The geometric center of metal spider overlaps with the geometric center of hollow field word frame, and the central axes of the inside 4 strip metal prongs of the central axis of 2 strip metal bars of formation metal spider and the hollow field of formation word frame.
In the such scheme, metal level, metal spider and hollow field word frame are preferably processed by metal material.
In the such scheme, the thickness of metal level, metal spider and hollow field word frame is preferably between 0.1～1.0 micron.
In the such scheme, dielectric is preferably processed by polymkeric substance or oxide.
In the such scheme, the distance between the distance between metal level and the metal spider and hollow field word frame and the metal spider is preferably between 0.2～10 micron.
In the such scheme, the transverse section of each absorber unit is square.
In the such scheme, the length of side of matrix is more preferably greater than 1.3 times of the incident terahertz wave beam.
Compared with prior art, the utlity model has following characteristics:
1, adopt hollow field word frame, metal spider, metal base plate and two layer medium to constitute the core of the adjustable many band absorbers of Terahertz frequency range, said structure can make the absorption peak number of terahertz detector increase;
2, can change the geometric parameter of hollow field word frame and metal spider flexibly according to user demand, can be through changing the lines length and the width of hollow field word frame and metal spider, to realize each absorption peak position accuracy controlling;
3, the utility model has important application in Terahertz bio-sensing, thermal detector and high sensitivity spectrographic detection field.
Description of drawings
Fig. 1 is the perspective view of absorber unit;
Fig. 2 is the structural representation of metal spider in the absorber unit structure;
Fig. 3 is the structural representation of absorber unit structure hollow heart word frame;
Fig. 4 is the adjustable top views of being with wave-absorbers of two-dimensional array formula Terahertz frequency range that 2 * 2 absorber unit are formed more;
Indicate among the figure: 1, silicon substrate; 2, metal level; 3, dielectric; 4, metal spider; 4-1, bonding jumper; 5, hollow field word frame; 5-1, metal prong; 5-2, metal moulding.
Embodiment
A kind of Terahertz frequency range is adjustable, and many band wave-absorbers are as shown in Figure 1, and it comprises at least 4 absorber unit that are arranged.Wherein each absorber unit is all mainly formed by containing silicon substrate 1, metal level 2, dielectric 3, metal spider 4 and hollow field word frame 5.The upper and lower surfaces of metal level 2 pastes with the lower surface of dielectric 3 and the upper surface that contains silicon substrate 1 respectively mutually, wherein dielectric 3 be positioned at metal level 2 directly over, contain silicon substrate 1 be positioned at metal level 2 under.Hollow field word frame 5 levels are attached at the upper surface of dielectric 3, and 4 levels of metal spider are embedded at the middle part of dielectric 3, word frame 5 planes of living in, hollow field and metal spider 4 plane parallel of living in.Be that metal spider 4 is divided into 2 layers of dielectric layer with dielectric 3, each absorber unit is followed successively by silicon base from bottom to top, be positioned at metal level 2 on the silicon base, be positioned at first dielectric layer on the metal level 2, be positioned at metal spider 4 on first dielectric layer, be positioned at second dielectric layer on the metal spider 4, be positioned at the hollow field word frame 5 on second dielectric layer.The geometric center of metal spider 4 overlaps with the geometric center of hollow field word frame 5, and the central axes of the inside 4 strip metal prong 5-1 of the central axis of 2 strip metal bar 4-1 of formation metal spider 4 and the hollow field of formation word frame 5.The transverse section of above-mentioned each absorber unit is square.
The above-mentioned silicon substrate 1 that contains all is cubic with dielectric 3, and dielectric 3 overlays and contains silicon substrate 1 top, is separated by through metal level 2 between the two.Contain the pedestal of silicon substrate 1 as absorber unit.3 of dielectrics are processed by polymkeric substance or oxide, and its fundamental purpose is to realize the mutual isolation of metal level 2, metal spider 4 and hollow field word frame 5, simultaneously THz wave is produced certain absorption.In the utility model preferred embodiment, containing silicon substrate 1, to be bottom surface with dielectric 3 be foursquare cube, and at this moment, metal level 2 is a square-shaped planar.In the utility model, the distance between metal level 2 and the metal spider 4 promptly thickness and the thickness that the distance between hollow field word frame 5 and the metal spider 4 is second dielectric layer of first dielectric layer all between 0.2～10 micron.
Above-mentioned metal level 2, metal spider 4 and hollow field word frame 5 adopt metal materials such as gold, copper or aluminium to process, and in concrete selection, 3 can select for use identical metal material to process, and also can select the different metallic material to process.Metal level 2, metal spider 4 and hollow field word frame 5 all are flat sheet.Wherein metal level 2 is a plane identical with size with the shape of upper surface that contains silicon substrate 1 and dielectric 3 lower surfaces.Metal spider 4 is that the bonding jumper 4-1 cross by 2 strips forms.Referring to Fig. 2.5 of hollow field word frames are the metal moulding 5-2 by a square shape, and are arranged on the inner 4 strip metal prong 5-1 composition of metal moulding 5-2.The wherein end of 4 strip metal prong 5-1 is connected on 4 limits of metal moulding 5-2, and the other end then points to the center of metal moulding 5-2.4 strip metal prong 5-1 constitute the cruciform of a hollow in metal moulding 5-2 inside in twos relatively but do not join.Referring to Fig. 3.In the utility model, the thickness of metal level 2, metal spider 4 and hollow field word frame 5 is 0.1～1.0 micron.
In the utility model; The structural parameters of metal spider 4 and hollow field word frame 5 have determined the concrete performance of absorber unit; Through changing length and width, the length of hollow field word frame 5 metal moulding 5-2 and the length and the width of width and hollow field word frame 5 inner 4 strip metal prong 5-1 of metal spider 4, position that can each absorption peak of accuracy controlling.In the utility model, the equal in length of 2 strip metal bar 4-1 of said metal spider 4 is square cross; The long limit of hollow field word frame 5 equates with minor face, is foursquare matrix pattern.The external foursquare area of the external square of above-mentioned metal spider 4 and hollow field word frame 5 is less than the area of metal level 2.
In the utility model, the line thickness of the metal moulding 5-2 of 2 strip metal bar 4-1 of said metal spider 4 and hollow field word frame 5 is 2～12 microns.The line thickness of 4 strip metal prong 5-1 of hollow field word frame 5 is 3～30 microns.The lines length of 2 strip metal bar 4-1 of said metal spider 4 is 30～500 microns.The length of side of the metal moulding 5-2 of described hollow field word frame 5 is 30～500 microns; The length of 4 strip metal prong 5-1 of hollow field word frame 5 inside is 10～200 microns.
For the two-dimensional characteristics that guarantees the utility model is the directivity of XY axle, a plurality of absorber unit can be arranged into the matrix of m * n, and the value of above-mentioned m and n can equate also can be unequal.But in order to obtain the adjustable many band wave-absorbers of foursquare Terahertz frequency range, in the utility model preferred embodiment, said Terahertz frequency range is adjustable, and many band wave-absorbers have N * N absorber unit to form, and these absorber unit are N * N arranged each other.The value of above-mentioned N is identical, promptly forms foursquare matrix.The array length of side of forming is decided by the THz wave beam diameter of actual incident, and the array length of side is greater than 1.3 times of incident THz wave beam diameter usually.Referring to Fig. 4.
Be that the adjustable many band wave-absorbers of the square Terahertz of 76 μ m * 76 μ m are example with unit size below, the utility model specifically described in conjunction with accompanying drawing.
The cross sectional dimensions that contains silicon base of each absorber unit bottom is 76 μ m * 76 μ m.Be positioned at the metal level 2 on the silicon base, its cross sectional dimensions also is 76 μ m * 76m.Be positioned at first dielectric layer on the metal level 2, its cross sectional dimensions also is 76 μ m * 76 μ m.Be positioned at the metal spider 4 on first dielectric layer.Be positioned at second dielectric layer on the metal spider 4, its cross sectional dimensions also is 76 μ m * 76 μ m.Be positioned at the hollow field word frame 5 on the dielectric layer.The absorber unit structural representation is shown in accompanying drawing 1, and metal spider 4 structures are as shown in Figure 2, and hollow field word frame 5 structures are as shown in Figure 3.
Wherein, the geometric center of metal spider 4 overlaps with the geometric center of hollow field word frame 5, and the central axes of four strip metal prong 5-1 of the central axis of two bonding jumper 4-1 of metal spider 4 and hollow field word frame 5 inside.The material of metal level 2, metal spider 4 and hollow field word frame 5 all is a gold, and the material of dielectric 3 all is a polymkeric substance.The thickness of metal level 2, metal spider 4 and hollow field word frame 5 all is 0.2 micron, and first thickness of dielectric layers is 2.4 microns, and the thickness of second dielectric layer is 4.2 microns.The line thickness of 2 strip metal bar 4-1 of metal spider 4 is 14 microns, and length is 58 microns.The line thickness of the metal moulding 5-2 of hollow field word frame 5 is 5 microns, and 4 length of sides of metal moulding 5-2 are 58 microns.The length of hollow field word frame 5 inner four strip metal prong 5-1 is 17 microns, and width is 4 microns.Through changing length and width, the length of hollow field word frame 5 and the length and the width of line width and hollow field word frame 5 inner limbs prongs of metal spider 4, position that can each absorption peak of accuracy controlling.
More than be the situation of a unit, need unit composition two-dimensional array structure thus in the practical application, in the present embodiment, adopt the adjustable many band wave-absorbers of Terahertz frequency range of 4 absorber unit formation 2 * 2 two-dimensional array structure, referring to Fig. 4.The array length of side of forming is decided by the THz wave beam diameter of actual incident, and the array length of side is greater than 1.3 times of incident THz wave beam diameter usually.
Claims (7)
1. adjustable many band wave-absorbers of a Terahertz frequency range; It is characterized in that: comprise at least 4 absorber unit that are arranged, wherein each absorber unit is all mainly formed by containing silicon substrate (1), metal level (2), dielectric (3), metal spider (4) and hollow field word frame (5);
The upper and lower surfaces of metal level (2) pastes with the lower surface of dielectric (3) and the upper surface that contains silicon substrate (1) respectively mutually, wherein dielectric (3) be positioned at metal level (2) directly over, contain silicon substrate (1) be positioned at metal level (2) under;
Hollow field word frame (5) level is attached at the upper surface of dielectric (3), and metal spider (4) then level is embedded at the middle part of dielectric (3), hollow field word frame (5) plane of living in and metal spider (4) plane parallel of living in;
The geometric center of metal spider (4) overlaps with the geometric center of hollow field word frame (5), and the central axes of the inside 4 strip metal prongs (5-1) of the central axis of 2 strip metal bars (4-1) of formation metal spider (4) and the hollow field word frame of formation (5).
2. a kind of Terahertz frequency range according to claim 1 is adjustable is with wave-absorbers more, and it is characterized in that: metal level (2), metal spider (4) and hollow field word frame (5) are processed by metal material.
3. a kind of Terahertz frequency range according to claim 1 is adjustable is with wave-absorbers more, and it is characterized in that: the thickness of metal level (2), metal spider (4) and hollow field word frame (5) is 0.1～1.0 micron.
4. a kind of Terahertz frequency range according to claim 1 is adjustable is with wave-absorbers more, and it is characterized in that: dielectric (3) is processed by polymkeric substance or oxide.
5. a kind of Terahertz frequency range according to claim 1 is adjustable is with wave-absorbers more, and it is characterized in that: the distance between distance between metal level (2) and the metal spider (4) and hollow field word frame (5) and the metal spider (4) is all between 0.2～10 micron.
6. a kind of Terahertz frequency range according to claim 1 is adjustable is with wave-absorbers more, and it is characterized in that: the transverse section of each absorber unit is square.
7. a kind of Terahertz frequency range according to claim 1 is adjustable is with wave-absorbers more, and it is characterized in that: the length of side of matrix is greater than 1.3 times of the incident terahertz wave beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220160081 CN202631109U (en) | 2012-04-16 | 2012-04-16 | Terahertz frequency range adjustable multi-stripe absorber |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220160081 CN202631109U (en) | 2012-04-16 | 2012-04-16 | Terahertz frequency range adjustable multi-stripe absorber |
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| CN202631109U true CN202631109U (en) | 2012-12-26 |
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| CN 201220160081 Expired - Fee Related CN202631109U (en) | 2012-04-16 | 2012-04-16 | Terahertz frequency range adjustable multi-stripe absorber |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102620824A (en) * | 2012-04-16 | 2012-08-01 | 桂林电子科技大学 | Terahertz frequency band adjustable multi-band wave absorber |
| CN103522626A (en) * | 2013-10-14 | 2014-01-22 | 桂林电子科技大学 | Terahertz wave absorption body capable of dynamically and continuously adjusting absorbing bandwidth |
-
2012
- 2012-04-16 CN CN 201220160081 patent/CN202631109U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102620824A (en) * | 2012-04-16 | 2012-08-01 | 桂林电子科技大学 | Terahertz frequency band adjustable multi-band wave absorber |
| CN103522626A (en) * | 2013-10-14 | 2014-01-22 | 桂林电子科技大学 | Terahertz wave absorption body capable of dynamically and continuously adjusting absorbing bandwidth |
| CN103522626B (en) * | 2013-10-14 | 2015-04-08 | 桂林电子科技大学 | Terahertz wave absorption body capable of dynamically and continuously adjusting absorbing bandwidth |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121226 Termination date: 20140416 |