CN202586720U - 一种新型igbt模块 - Google Patents

一种新型igbt模块 Download PDF

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Publication number
CN202586720U
CN202586720U CN 201220105336 CN201220105336U CN202586720U CN 202586720 U CN202586720 U CN 202586720U CN 201220105336 CN201220105336 CN 201220105336 CN 201220105336 U CN201220105336 U CN 201220105336U CN 202586720 U CN202586720 U CN 202586720U
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Prior art keywords
ceramic substrate
igbt module
igbt
temperature
temperature sensor
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Expired - Fee Related
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CN 201220105336
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申宁
康长路
杨山
宋岳文
王德强
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ShanDong TaiKai Power Electronic Co Ltd
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ShanDong TaiKai Power Electronic Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

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  • Power Conversion In General (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

本实用新型公开了一种新型IGBT模块，包括陶瓷基板、以及固定在陶瓷基板上的硅片和连接片，硅片通过连线与连接片相连接，陶瓷基板上还固定有温度传感器，以上各元件采用硅胶封装在一起。本实用新型将温度传感器封装在IGBT模块内，免受外界电磁干扰，避免对温度信号的干扰，温度传感器NTC与IGBT位于同一陶瓷基板上，实现精确温度测量和温度保护的功能。

Description

一种新型IGBT模块
技术领域
本实用新型涉及一种IGBT（绝缘栅双极晶闸管）模块。
背景技术
SVG采用自换相桥式电压型变流电路为基本电路，通过电抗器或变压器并联在电网上，通过调节桥式电路交流侧输出电压相对系统电压的相位和幅值，迅速吸收或发出满足要求的无功电流，实现快速动态无功补偿的目的。
自换相桥式电压型变流电路中采用了绝缘栅双极晶闸管（Insulated-Gate Bipolar Transistor--IGBT）构成链式逆变器。IGBT综合了GTR和MOSFET的优点，具有更高的耐压和通流能力，并可同时保持开关频率高的特点。工程中采用的IGBT模块通常指IGBT及其辅助器件与其保护和驱动电路封装集成，也称作智能IGBT（Intelligent IGBT）。
温升保护控制是IGBT的一项重要考核指标，常用的检测方法为IGBT模块外贴热敏电阻的方式，该方式的缺点是温度信号检测不准确，存在误差。
发明内容
为解决现有技术中存在的上述问题，本实用新型提供一种能有效地测量功率模块的稳态壳温的新型IGBT模块，其所采取的技术方案为：该模块包括陶瓷基板、以及固定在陶瓷基板上的硅片和连接片，硅片通过连线与连接片相连接，陶瓷基板上还固定有温度传感器，以上各元件采用硅胶封装在一起。
本实用新型将用于测量模块壳温的温度传感器(NTC)直接封装在模块内的陶瓷基板上，免受外界电磁干扰，避免对温度信号的干扰，NTC与IGBT位于同一陶瓷基板上，模块内使用隔离用硅胶填充，满足隔离电压的要求，可大大简化模块壳温的测量过程，实现精确温度测量和温度保护的功能。
附图说明
图1为本实用新型的结构示意图。
具体实施方式
下面结合附图和具体实施例对本实用新型进行详细描述。
如图1所示，陶瓷基板1上固定硅片2、连接片3和温度传感器5，硅片2通过连线4与连接片3相连接，以上各元件采用隔离用硅胶封装在一起。

Claims (1)

1.一种新型IGBT模块，包括陶瓷基板（1）、以及固定在陶瓷基板（1）上的硅片（2）和连接片（3），硅片（2）通过连线（4）与连接片（3）相连接，其特征在于：陶瓷基板（1）上还固定有温度传感器（5），以上各元件采用硅胶封装在一起。
CN 201220105336 2012-03-20 2012-03-20 一种新型igbt模块 Expired - Fee Related CN202586720U (zh)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104576555A (zh) * 2014-06-24 2015-04-29 深圳青铜剑电力电子科技有限公司 一种带导热硅胶片的功率半导体模块及其制作方法
CN104552708A (zh) * 2014-06-24 2015-04-29 深圳青铜剑电力电子科技有限公司 一种制作导热硅胶片的模具及其使用方法
CN105828586A (zh) * 2016-06-08 2016-08-03 苏州欧姆尼克新能源科技有限公司 小功率光伏逆变器
CN109269667A (zh) * 2018-09-15 2019-01-25 国网福建省电力有限公司 一种具有温度实时监测系统的新型igbt装置及其制作方法
DE102022211819B3 (de) 2022-11-09 2024-03-28 Volkswagen Aktiengesellschaft Elektronikbaugruppe und Verfahren zur Herstellung einer Elektronikbaugruppe

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104576555A (zh) * 2014-06-24 2015-04-29 深圳青铜剑电力电子科技有限公司 一种带导热硅胶片的功率半导体模块及其制作方法
CN104552708A (zh) * 2014-06-24 2015-04-29 深圳青铜剑电力电子科技有限公司 一种制作导热硅胶片的模具及其使用方法
CN105828586A (zh) * 2016-06-08 2016-08-03 苏州欧姆尼克新能源科技有限公司 小功率光伏逆变器
CN109269667A (zh) * 2018-09-15 2019-01-25 国网福建省电力有限公司 一种具有温度实时监测系统的新型igbt装置及其制作方法
DE102022211819B3 (de) 2022-11-09 2024-03-28 Volkswagen Aktiengesellschaft Elektronikbaugruppe und Verfahren zur Herstellung einer Elektronikbaugruppe

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