CN202564267U - Single-island exposed type single-circle single-chip up-mounting package structure employing an electrostatic discharge ring - Google Patents

Single-island exposed type single-circle single-chip up-mounting package structure employing an electrostatic discharge ring Download PDF

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Publication number
CN202564267U
CN202564267U CN 201220204530 CN201220204530U CN202564267U CN 202564267 U CN202564267 U CN 202564267U CN 201220204530 CN201220204530 CN 201220204530 CN 201220204530 U CN201220204530 U CN 201220204530U CN 202564267 U CN202564267 U CN 202564267U
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China
Prior art keywords
pin
dao
chip
island
metal
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Expired - Lifetime
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CN 201220204530
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Chinese (zh)
Inventor
王新潮
李维平
梁志忠
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JCET Group Co Ltd
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Jiangsu Changjiang Electronics Technology Co Ltd
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Priority to CN 201220204530 priority Critical patent/CN202564267U/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48233—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a potential ring of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

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Abstract

The present utility model relates to a single-island exposed type single-circle single-chip up-mounting package structure employing an electrostatic discharge ring. It comprises an island (1), pins (2), and an electrostatic discharge ring (10) arranged between said island (1) and pins (2), wherein a chip (4) is mounted on the front surface of said island (1); the front surface of said chip (4) is connected with the front surface of the pins (2) and with the electrostatic discharge ring (10) through metal wires (5), respectively; the peripheral region of said island (1), the region between said island (1) and pins (2), and the region among the pins (2) all are enveloped by molding compounds (6); and small holes (7) are opened on the surface of molding compounds (6) below said island (1) and pins (2), and are provided therein with metal balls (9). The present utility model reduces manufacturing cost, improves safety and reliability of package, reduces environmental pollution, and can realize design and manufacture of high density circuit.

Description

Single base island exposed type individual pen single-chip formal dress static release ring encapsulating structure
Technical field
The utility model relates to the base island exposed type individual pen of a kind of list single-chip formal dress static release ring encapsulating structure, belongs to the semiconductor packaging field.
Background technology
The manufacturing process flow of traditional high-density base board encapsulating structure is as follows:
Step 1, referring to Fig. 3, get the substrate that a glass fiber material is processed,
Step 2, referring to Fig. 4, perforate on desired position on the glass fiber substrate,
Step 3, referring to Fig. 5, at the back side of glass fiber substrate coating one deck Copper Foil,
Step 4, referring to Fig. 6, insert conductive materials in the position of glass fiber substrate punching,
Step 5, referring to Fig. 7, at positive coating one deck Copper Foil of glass fiber substrate,
Step 6, referring to Fig. 8, the coating photoresistance film on glass fiber substrate surface,
Step 7, referring to Fig. 9, the photoresistance film is carried out exposure imaging in the position of needs windows,
Step 8, referring to Figure 10, the part that completion is windowed is carried out etching,
Step 9, referring to Figure 11, the photoresistance film of substrate surface is divested,
Step 10, referring to Figure 12, carry out the coating of anti-welding lacquer (being commonly called as green lacquer) on the surface of copper foil circuit layer,
Step 11, referring to Figure 13, need carry out load and the zone of routing bonding of back operation at anti-welding lacquer and window,
Step 12, referring to Figure 14, electroplate in the zone that step 11 is windowed, form Ji Dao and pin relatively,
Step 13, accomplish follow-up load, routing, seal, concerned process steps such as cutting.
Above-mentioned traditional high-density base board encapsulating structure exists following deficiency and defective:
1, many glass fiber materials of one deck, same also many costs of layer of glass;
2, because must use glass fiber, so with regard to many thickness space of about 100 ~ 150 μ m of layer of glass thickness;
3, glass fiber itself is exactly a kind of foaming substance, so easily because time of placing and environment suck moisture and moisture, directly have influence on the security capabilities of reliability or the grade of reliability;
4, the fiberglass surfacing Copper Foil metal layer thickness of about 50 ~ 100 μ m of one deck that has been covered; And the etching of metal level circuit and circuit distance also because the etched gap that the characteristic of etching factor can only be accomplished 50 ~ 100 μ m (referring to Figure 15; Best making ability is that etched gap is equal to the thickness that is etched object approximately), so the design of accomplishing high-density line and manufacturing that can't be real;
5, because must use the Copper Foil metal level, and the Copper Foil metal level is the mode that the employing high pressure is pasted, so the thickness of Copper Foil is difficult to be lower than the thickness of 50 μ m, otherwise just is difficult to operation like out-of-flatness or Copper Foil breakage or Copper Foil extension displacement or the like;
6, also because the whole base plate material is to adopt glass fiber material, thus significantly increased thickness 100 ~ 150 μ m of glass layer, can't be real accomplish ultra-thin encapsulation;
7, the traditional glass fiber stick on Copper Foil technology because material property difference very big (coefficient of expansion) causes stress deformation easily in the operation of adverse circumstances, directly have influence on precision and element and substrate adherence and reliability that element loads.
Summary of the invention
The purpose of the utility model is to overcome above-mentioned deficiency, and the base island exposed type individual pen of a kind of list single-chip formal dress static release ring encapsulating structure is provided, and its technology is simple; Need not use glass layer; Reduce manufacturing cost, improved the fail safe and the reliability of packaging body, reduced the environmental pollution that glass fiber material brings; And the metal substrate line layer adopts is electro-plating method, can really accomplish the design and the manufacturing of high-density line.
The purpose of the utility model is achieved in that the base island exposed type individual pen of a kind of list single-chip formal dress static release ring encapsulating structure; It comprises Ji Dao and pin; Be provided with static release ring between said Ji Dao and the pin; Front, said basic island is provided with chip through conduction or non-conductive bonding material; Be connected with metal wire between between said chip front side and the pin front and chip front side and the static release ring front; The zone of zone, Ji Dao and the pin bottom on zone, Ji Dao and pin top between zone, pin and the pin between zone, Ji Dao and the pin of periphery, said basic island and chip and metal wire all are encapsulated with plastic packaging material outward, offer aperture on the plastic packaging material surface of said Ji Dao and pin bottom, and said aperture is connected with the Ji Dao or the pin back side; Be provided with metal ball in the said aperture, said metal ball contacts with the Ji Dao or the pin back side.
Be provided with coat of metal between said metal ball and Ji Dao or the pin back side.
Said Ji Dao comprises Ji Dao top, Ji Dao bottom and intermediate barrier layers, and said Ji Dao top and Ji Dao bottom form by the single or multiple lift metal plating, and said intermediate barrier layers is nickel dam, titanium layer or copper layer.
Said pin comprises pin top, pin bottom and intermediate barrier layers, and said pin top and pin bottom form by the single or multiple lift metal plating, and said intermediate barrier layers is nickel dam, titanium layer or copper layer.
Compared with prior art, the utlity model has following beneficial effect:
1, the utility model need not use glass layer, so can reduce the cost that glass layer brings;
2, the utility model does not use the foaming substance of glass layer, so the grade of reliability can improve again, the fail safe to packaging body will improve relatively;
3, the utility model need not use the glass layer material, so just can reduce the environmental pollution that glass fiber material brings;
What 4, the two-dimensional metallic substrate circuit layer of the utility model was adopted is electro-plating method; And the gross thickness of electrodeposited coating is about 10 ~ 15 μ m; And the gap between circuit and the circuit can reach the gap below the 25 μ m easily, so can accomplish the technical capability of pin circuit tiling in the high density veritably;
5, the two-dimensional metallic substrate of the utility model is the metal level galvanoplastic because of what adopt; So the technology than glass fiber high pressure Copper Foil metal level is come simply, and do not have metal level because high pressure produces bad or puzzled that metal level out-of-flatness, metal level breakage and metal level extend and be shifted;
6, the two-dimensional metallic substrate circuit layer of the utility model is to carry out metal plating on the surface of metal base; So the material characteristic is basic identical; So the internal stress of coating circuit and metal base is basic identical, can carries out the back engineering (like the surface mount work of high temperature eutectic load, high temperature tin material scolder load and high temperature passive device) of adverse circumstances easily and be not easy to produce stress deformation.
Description of drawings
Fig. 1 is the sketch map of the base island exposed type individual pen of a kind of list of the utility model single-chip formal dress static release ring encapsulating structure.
Fig. 2 is the vertical view of Fig. 1.
Fig. 3 ~ Figure 14 is each operation sketch map of the manufacturing process flow of traditional high-density base board encapsulating structure.
Figure 15 is the etching situation sketch map of fiberglass surfacing Copper Foil metal level.
Wherein:
Base island 1
Pin 2
Conduction or non-conductive bonding material 3
Chip 4
Metal wire 5
Plastic packaging material 6
Aperture 7
Coat of metal 8
Metal ball 9
Static release ring 10.
Embodiment
Referring to Fig. 1, Fig. 2; The base island exposed type individual pen of a kind of list of the utility model single-chip formal dress static release ring encapsulating structure; It comprises basic island 1 and pin 2; Be provided with static release ring 10 between said basic island 1 and the pin 2; 1 front, said basic island is provided with chip 4 through conduction or non-conductive bonding material 3, said chip 4 positive with pin 2 fronts between and chip 4 positive with static release ring 10 between be connected with metal wire 5, all be encapsulated with plastic packaging materials 6 outside the zone of zone, basic island 1 and pin 2 bottoms on zone, basic island 1 and pin 2 tops between zone, pin 2 and the pin 2 between zone, basic island 1 and the pin 2 of 1 periphery, said basic island and chip 4 and the metal wire 5; Offer aperture 7 on plastic packaging material 6 surfaces of said basic island 1 and pin 2 bottoms; Said aperture 7 is connected with the basic island 1 or pin 2 back sides, is provided with metal ball 9 in the said aperture 7, and said metal ball 9 contacts with the basic island 1 or pin 2 back sides.
Be provided with coat of metal 8 between said metal ball 9 and basic island 1 or pin 2 back sides, said coat of metal 8 is an oxidation inhibitor.
Said metal ball 9 materials adopt tin or ashbury metal.
Said basic island 1 comprises Ji Dao top, Ji Dao bottom and intermediate barrier layers, and said Ji Dao top and Ji Dao bottom form by the single or multiple lift metal plating, and said intermediate barrier layers is nickel dam, titanium layer or copper layer.
Said pin 2 comprises pin top, pin bottom and intermediate barrier layers, and said pin top and pin bottom form by the single or multiple lift metal plating, and said intermediate barrier layers is nickel dam, titanium layer or copper layer.

Claims (4)

1. the base island exposed type individual pen of list single-chip formal dress static release ring encapsulating structure; It is characterized in that: it comprises Ji Dao (1) and pin (2); Be provided with static release ring (10) between said Ji Dao (1) and the pin (2); Said Ji Dao (1) is positive to be provided with chip (4) through conduction or non-conductive bonding material (3); Said chip (4) positive with pin (2) front between and be connected with metal wire (5) between chip (4) front and the static release ring (10); The outer plastic packaging material (6) that all is encapsulated with of the zone of zone, Ji Dao (1) and pin (2) bottom on zone, Ji Dao (1) and pin (2) top between zone, pin (2) and the pin (2) between zone, Ji Dao (1) and the pin (2) of said Ji Dao (1) periphery and chip (4) and metal wire (5); Offer aperture (7) on plastic packaging material (6) surface of said Ji Dao (1) and pin (2) bottom; Said aperture (7) is connected with the Ji Dao (1) or pin (2) back side, is provided with metal ball (9) in the said aperture (7), and said metal ball (9) contacts with the Ji Dao (1) or pin (2) back side.
2. the base island exposed type individual pen of a kind of list according to claim 1 single-chip formal dress static release ring encapsulating structure is characterized in that: be provided with coat of metal (8) between said metal ball (9) and Ji Dao (1) or pin (2) back side.
3. the base island exposed type individual pen of a kind of list according to claim 1 single-chip formal dress static release ring encapsulating structure; It is characterized in that: said Ji Dao (1) comprises Ji Dao top, Ji Dao bottom and intermediate barrier layers; Said Ji Dao top and Ji Dao bottom form by the single or multiple lift metal plating, and said intermediate barrier layers is nickel dam, titanium layer or copper layer.
4. the base island exposed type individual pen of a kind of list according to claim 1 single-chip formal dress static release ring encapsulating structure; It is characterized in that: said pin (2) comprises pin top, pin bottom and intermediate barrier layers; Said pin top and pin bottom form by the single or multiple lift metal plating, and said intermediate barrier layers is nickel dam, titanium layer or copper layer.
CN 201220204530 2012-05-09 2012-05-09 Single-island exposed type single-circle single-chip up-mounting package structure employing an electrostatic discharge ring Expired - Lifetime CN202564267U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201220204530 CN202564267U (en) 2012-05-09 2012-05-09 Single-island exposed type single-circle single-chip up-mounting package structure employing an electrostatic discharge ring

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201220204530 CN202564267U (en) 2012-05-09 2012-05-09 Single-island exposed type single-circle single-chip up-mounting package structure employing an electrostatic discharge ring

Publications (1)

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CN202564267U true CN202564267U (en) 2012-11-28

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Granted publication date: 20121128

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