CN202564242U

CN202564242U - Multi-base-island exposed type single-circle single-chip normally-equipped passive-component packaging structure

Info

Publication number: CN202564242U
Application number: CN 201220204461
Authority: CN
Inventors: 王新潮; 李维平; 梁志忠
Original assignee: Jiangsu Changjiang Electronics Technology Co Ltd
Current assignee: JCET Group Co Ltd
Priority date: 2012-05-09
Filing date: 2012-05-09
Publication date: 2012-11-28
Anticipated expiration: 2022-05-09

Abstract

The utility model relates to a multi-base-island exposed type single-circle single-chip normally-equipped passive-component packaging structure, comprising a plurality of the base islands (1) and the pins (2). A chip (4) is arranged on the fronts of the plurality of the base islands (1). The metal wires (5) connect between a front of the chip (4) and the fronts of the pins (2). Plastic package materials (6) are packaged on an area around the base islands (1) and the pins (2) and are packaged outside of the chip (4) and the metal wires (5). The holes (7) are opened on the surface of the plastic package materials (6) on a lower part of the base islands (1) and the pins (2) and connected with the back surfaces of the base islands (1) or the pins (2). Metal balls (9) are disposed in the holes (7). Passive components (10) are bridged between the pins (2). The beneficial effects of the utility model are that manufacturing cost is reduced, security and reliability of the packaging structure are raised, environmental pollution is reduced and the structure can really achieve design and manufacturing of a high-density circuit.

Description

Many base island exposed type individual pen single-chip formal dress passive device encapsulating structures

Technical field

The utility model relates to a kind of how base island exposed type individual pen single-chip formal dress passive device encapsulating structure, belongs to the semiconductor packaging field.

Background technology

The manufacturing process flow of traditional high-density base board encapsulating structure is as follows:

Step 1, referring to Fig. 3, get the substrate that a glass fiber material is processed,

Step 2, referring to Fig. 4, perforate on desired position on the glass fiber substrate,

Step 3, referring to Fig. 5, at the back side of glass fiber substrate coating one deck Copper Foil,

Step 4, referring to Fig. 6, insert conductive materials in the position of glass fiber substrate punching,

Step 5, referring to Fig. 7, at positive coating one deck Copper Foil of glass fiber substrate,

Step 6, referring to Fig. 8, the coating photoresistance film on glass fiber substrate surface,

Step 7, referring to Fig. 9, the photoresistance film is carried out exposure imaging in the position of needs windows,

Step 8, referring to Figure 10, the part that completion is windowed is carried out etching,

Step 9, referring to Figure 11, the photoresistance film of substrate surface is divested,

Step 10, referring to Figure 12, carry out the coating of anti-welding lacquer (being commonly called as green lacquer) on the surface of copper foil circuit layer,

Step 11, referring to Figure 13, need carry out load and the zone of routing bonding of back operation at anti-welding lacquer and window,

Step 12, referring to Figure 14, electroplate in the zone that step 11 is windowed, form Ji Dao and pin relatively,

Step 13, accomplish follow-up load, routing, seal, concerned process steps such as cutting.

Above-mentioned traditional high-density base board encapsulating structure exists following deficiency and defective:

1, many glass fiber materials of one deck, same also many costs of layer of glass;

2, because must use glass fiber, so with regard to many thickness space of about 100 ~ 150 μ m of layer of glass thickness;

3, glass fiber itself is exactly a kind of foaming substance, so easily because time of placing and environment suck moisture and moisture, directly have influence on the security capabilities of reliability or the grade of reliability;

4, the fiberglass surfacing Copper Foil metal layer thickness of about 50 ~ 100 μ m of one deck that has been covered; And the etching of metal level circuit and circuit distance also because the etched gap that the characteristic of etching factor can only be accomplished 50 ~ 100 μ m (referring to Figure 15; Best making ability is that etched gap is equal to the thickness that is etched object approximately), so the design of accomplishing high-density line and manufacturing that can't be real;

5, because must use the Copper Foil metal level, and the Copper Foil metal level is the mode that the employing high pressure is pasted, so the thickness of Copper Foil is difficult to be lower than the thickness of 50 μ m, otherwise just is difficult to operation like out-of-flatness or Copper Foil breakage or Copper Foil extension displacement or the like;

6, also because the whole base plate material is to adopt glass fiber material, thus significantly increased thickness 100 ~ 150 μ m of glass layer, can't be real accomplish ultra-thin encapsulation;

7, the traditional glass fiber stick on Copper Foil technology because material property difference very big (coefficient of expansion) causes stress deformation easily in the operation of adverse circumstances, directly have influence on precision and element and substrate adherence and reliability that element loads.

Summary of the invention

The purpose of the utility model is to overcome above-mentioned deficiency, and a kind of how base island exposed type individual pen single-chip formal dress passive device encapsulating structure is provided, and its technology is simple; Need not use glass layer; Reduce manufacturing cost, improved the fail safe and the reliability of packaging body, reduced the environmental pollution that glass fiber material brings; And the metal substrate line layer adopts is electro-plating method, can really accomplish the design and the manufacturing of high-density line.

The purpose of the utility model is achieved in that a kind of how base island exposed type individual pen single-chip formal dress passive device encapsulating structure; It comprises Ji Dao and pin; Said Ji Dao has a plurality of; Front, said a plurality of basic island is provided with chip through conduction or non-conductive bonding material, is connected with metal wire between said chip front side and the pin front, and the zone of zone, Ji Dao and the pin bottom on zone, Ji Dao and pin top between zone, pin and the pin between zone, Ji Dao and the pin of periphery, said basic island and chip and metal wire all are encapsulated with plastic packaging material outward; Offer aperture on the plastic packaging material surface of said Ji Dao and pin bottom; Said aperture is connected with the Ji Dao or the pin back side, is provided with metal ball in the said aperture, and said metal ball contacts with the Ji Dao or the pin back side; Cross-over connection passive device between said pin and the pin, said passive device cross-over connection in pin between the positive and pin front or cross-over connection between the pin back side and the pin back side.

Be provided with coat of metal between said metal ball and Ji Dao or the pin back side.

Said Ji Dao comprises Ji Dao top, Ji Dao bottom and intermediate barrier layers, and said Ji Dao top and Ji Dao bottom form by the single or multiple lift metal plating, and said intermediate barrier layers is nickel dam, titanium layer or copper layer.

Said pin comprises pin top, pin bottom and intermediate barrier layers, and said pin top and pin bottom form by the single or multiple lift metal plating, and said intermediate barrier layers is nickel dam, titanium layer or copper layer.

Compared with prior art, the utlity model has following beneficial effect:

1, the utility model need not use glass layer, so can reduce the cost that glass layer brings;

2, the utility model does not use the foaming substance of glass layer, so the grade of reliability can improve again, the fail safe to packaging body will improve relatively;

3, the utility model need not use the glass layer material, so just can reduce the environmental pollution that glass fiber material brings;

What 4, the two-dimensional metallic substrate circuit layer of the utility model was adopted is electro-plating method; And the gross thickness of electrodeposited coating is about 10 ~ 15 μ m; And the gap between circuit and the circuit can reach the gap below the 25 μ m easily, so can accomplish the technical capability of pin circuit tiling in the high density veritably;

5, the two-dimensional metallic substrate of the utility model is the metal level galvanoplastic because of what adopt; So the technology than glass fiber high pressure Copper Foil metal level is come simply, and do not have metal level because high pressure produces bad or puzzled that metal level out-of-flatness, metal level breakage and metal level extend and be shifted;

6, the two-dimensional metallic substrate circuit layer of the utility model is to carry out metal plating on the surface of metal base; So the material characteristic is basic identical; So the internal stress of coating circuit and metal base is basic identical, can carries out the back engineering (like the surface mount work of high temperature eutectic load, high temperature tin material scolder load and high temperature passive device) of adverse circumstances easily and be not easy to produce stress deformation.

Description of drawings

Fig. 1 is the sketch map of a kind of how base island exposed type individual pen single-chip formal dress passive device encapsulating structure of the utility model.

Fig. 2 is the vertical view of Fig. 1.

Fig. 3 ~ Figure 14 is each operation sketch map of the manufacturing process flow of traditional high-density base board encapsulating structure.

Figure 15 is the etching situation sketch map of fiberglass surfacing Copper Foil metal level.

Wherein:

Base island 1

Pin 2

Conduction or non-conductive bonding material 3

Chip 4

Metal wire 5

Plastic packaging material 6

Aperture 7

Coat of metal 8

Metal ball 9

Passive device 10.

Embodiment

Referring to Fig. 1, Fig. 2; A kind of how base island exposed type individual pen single-chip formal dress passive device encapsulating structure of the utility model; It comprises basic island 1 and pin 2; Said basic island 1 has a plurality of; 1 front, said a plurality of basic island is provided with chip 4 through conduction or non-conductive bonding material 3, said chip 4 positive with pin 2 fronts between be connected with metal wire 5, the zone of zone, basic island 1 and pin 2 bottoms on zone, basic island 1 and pin 2 tops between zone, pin 2 and the pin 2 between zone, basic island 1 and the pin 2 of 1 periphery, said basic island and chip 4 and metal wire 5 all are encapsulated with plastic packaging materials 6 outward; Offer aperture 7 on plastic packaging material 6 surfaces of said basic island 1 and pin 2 bottoms; Said aperture 7 is connected with the basic island 1 or pin 2 back sides, is provided with metal ball 9 in the said aperture 7, and said metal ball 9 contacts with the basic island 1 or pin 2 back sides; Cross-over connection passive device 10 between said pin 2 and the pin 2, said passive device 10 cross-over connections in pin 2 between positive and pin 2 fronts or cross-over connection between pin 2 back sides and pin 2 back sides.

Be provided with coat of metal 8 between said metal ball 9 and basic island 1 or pin 2 back sides, said coat of metal 8 is an oxidation inhibitor.

Said metal ball 9 materials adopt tin or ashbury metal.

Said basic island 1 comprises Ji Dao top, Ji Dao bottom and intermediate barrier layers, and said Ji Dao top and Ji Dao bottom form by the single or multiple lift metal plating, and said intermediate barrier layers is nickel dam, titanium layer or copper layer.

Said pin 2 comprises pin top, pin bottom and intermediate barrier layers, and said pin top and pin bottom form by the single or multiple lift metal plating, and said intermediate barrier layers is nickel dam, titanium layer or copper layer.

Claims

1. base island exposed type individual pen single-chip formal dress passive device encapsulating structure more than a kind; It is characterized in that: it comprises Ji Dao (1) and pin (2); Said Ji Dao (1) has a plurality of; Said a plurality of Ji Dao (1) is positive to be provided with chip (4) through conduction or non-conductive bonding material (3); Said chip (4) positive with pin (2) front between be connected with metal wire (5); The outer plastic packaging material (6) that all is encapsulated with of the zone of zone, Ji Dao (1) and pin (2) bottom on zone, Ji Dao (1) and pin (2) top between zone, pin (2) and the pin (2) between zone, Ji Dao (1) and the pin (2) of said Ji Dao (1) periphery and chip (4) and metal wire (5); Offer aperture (7) on plastic packaging material (6) surface of said Ji Dao (1) and pin (2) bottom; Said aperture (7) is connected with the Ji Dao (1) or pin (2) back side, is provided with metal ball (9) in the said aperture (7), and said metal ball (9) contacts with the Ji Dao (1) or pin (2) back side; Cross-over connection passive device (10) between said pin (2) and the pin (2), said passive device (10) cross-over connection in pin (2) between positive and pin (2) front or cross-over connection between pin (2) back side and pin (2) back side.

2. a kind of how base island exposed type individual pen single-chip formal dress passive device encapsulating structure according to claim 1 is characterized in that: be provided with coat of metal (8) between said metal ball (9) and Ji Dao (1) or pin (2) back side.

3. a kind of how base island exposed type individual pen single-chip formal dress passive device encapsulating structure according to claim 1; It is characterized in that: said Ji Dao (1) comprises Ji Dao top, Ji Dao bottom and intermediate barrier layers; Said Ji Dao top and Ji Dao bottom form by the single or multiple lift metal plating, and said intermediate barrier layers is nickel dam, titanium layer or copper layer.

4. a kind of how base island exposed type individual pen single-chip formal dress passive device encapsulating structure according to claim 1; It is characterized in that: said pin (2) comprises pin top, pin bottom and intermediate barrier layers; Said pin top and pin bottom form by the single or multiple lift metal plating, and said intermediate barrier layers is nickel dam, titanium layer or copper layer.