CN202523717U - High-voltage switch device - Google Patents
High-voltage switch device Download PDFInfo
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- CN202523717U CN202523717U CN2012201673359U CN201220167335U CN202523717U CN 202523717 U CN202523717 U CN 202523717U CN 2012201673359 U CN2012201673359 U CN 2012201673359U CN 201220167335 U CN201220167335 U CN 201220167335U CN 202523717 U CN202523717 U CN 202523717U
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- switch devices
- tension switch
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- snakelike
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229920005591 polysilicon Polymers 0.000 claims description 33
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 19
- 229910052760 oxygen Inorganic materials 0.000 claims description 19
- 239000001301 oxygen Substances 0.000 claims description 19
- 239000002019 doping agent Substances 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 12
- 230000005669 field effect Effects 0.000 claims description 5
- 238000001514 detection method Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
The application discloses a high-voltage switching device. The high-voltage switching device includes: the semiconductor device comprises a substrate, an epitaxial layer, a source region, a drain region, a drift region, gate oxide, field oxide, a gate portion and a snake-shaped polycrystalline silicon portion. The high-voltage device disclosed by the application does not need an additional bonding pad, drain voltage detection is simply realized, and the original manufacturing process does not need to be greatly improved, so that the manufactured high-voltage switch device is high in reliability.
Description
Technical field
The utility model relates to a kind of switching device, and more particularly, the utility model relates to a kind of High-tension Switch Devices.
Background technology
For electronic circuit, what many times need the sense switch device misses voltage in order to under-voltage the latching (UVLO) of detection line voltage or in order to open overvoltage protection (OVP).Method commonly used couples for the drift region of passing through switching device through metal wire drain pad and the resistance dispenser with switching device, to obtain required detection voltage.But to High-tension Switch Devices (switching device that is higher than 500V like operating voltage); If directly pass through the drift region of switching device with metal wire; Then, will seriously reduce the puncture voltage of switching device, and damage switching device most probably owing to the high pressure drop on the metal wire.
Prior art is attempted the above-mentioned effect that the whole bag of tricks is eliminated metal wire.A kind of prior art is through making the two-layer polysilicon dish with the effect of isolating metal line in silicon top layer Electric Field Distribution.But this method makes process complications, and causes the switching device reliability to reduce.
Another kind of prior art couples the resistance dispenser through extra drain pad of increase High-tension Switch Devices outside, and misses pad through bonding line with two and be coupled to lead frame.This method has increased number of pads, and cost is uprised.
The utility model content
Therefore the purpose of the utility model is to solve the above-mentioned technical problem of prior art, proposes a kind of simple and reliable High-tension Switch Devices.
According to above-mentioned purpose, the utility model provides a kind of High-tension Switch Devices, comprising: substrate has first type and mixes; Be formed on the epitaxial loayer on the substrate; Be formed on drain region and source region in the epitaxial loayer, wherein said source region has first type mixes, and said drain region has second type and mixes; Drift region between said source region and said drain region; The grid oxygen in source region, cover part; The field oxygen of other epitaxial loayer parts outside covering gate oxygen covers; Be formed on the grid part on the grid oxygen; And form the snakelike polysilicon segment on the oxygen on the scene; Wherein said snakelike polysilicon segment has first end and second end; Its first end contacts with said drain region; But separated, said snakelike polysilicon segment is positioned on the said drift region its second end in vertical direction near said grid part.
According to a kind of High-tension Switch Devices of the utility model embodiment, wherein said High-tension Switch Devices comprises MOS memory or junction field effect transistor; Said first type is doped to the P type, and said second type is doped to the N type.
According to a kind of High-tension Switch Devices of the utility model embodiment, wherein said High-tension Switch Devices comprises MOS memory or junction field effect transistor; Said first type is doped to the N type, and said second type is doped to the P type.
According to a kind of High-tension Switch Devices of the utility model embodiment, the resistance value scope of wherein said snakelike polysilicon segment is 3 * 10
6Ω～5 * 10
6Ω.
According to a kind of High-tension Switch Devices of the utility model embodiment, second end of wherein said snakelike polysilicon segment is drawn through metal wire, and is connected to reference to ground through resistor.
According to a kind of High-tension Switch Devices of the utility model embodiment, the resistance of wherein said resistor is below 1/50 of resistance value of said snakelike polysilicon segment.
According to a kind of High-tension Switch Devices of the utility model embodiment, wherein said drift region comprises a plurality of light doping sections and a plurality of the 3rd doped region, and said light doping section and the 3rd doped region alternately are placed in the drift region successively; The dopant concentration level of wherein said light doping section is lower than the dopant concentration level of said the 3rd doped region.
A kind of High-tension Switch Devices according to the utility model embodiment further comprises the base that is formed at said source region, and said base has first type and mixes.
According to a kind of High-tension Switch Devices of the utility model embodiment, further comprise the source electrode that contacts with second heavily doped region with first heavily doped region; And the drain electrode that contacts with the 3rd heavily doped region.
According to a kind of High-tension Switch Devices of the utility model embodiment, wherein said grid part adopts polysilicon.
Above-mentioned High-tension Switch Devices according to the utility model each side need not additional pads, and the simple realization drain voltage detects, and it need not big improvement to original manufacture craft, the High-tension Switch Devices good reliability that makes making.
Description of drawings
Fig. 1 schematically shows the section Figure 100 according to the High-tension Switch Devices of the utility model one embodiment;
Fig. 2 schematically shows the section Figure 200 according to the High-tension Switch Devices of the utility model one embodiment;
Fig. 3 schematically shows the vertical view 300 according to the High-tension Switch Devices of the utility model one embodiment;
The equivalent circuit diagram 400 of the schematically illustrated High-tension Switch Devices shown in Figure 1 of Fig. 4;
Fig. 5 schematically shows the profile 500 according to the High-tension Switch Devices of another embodiment of the utility model.
Embodiment
To describe the specific embodiment of the utility model below in detail, should be noted that the embodiments described herein only is used to illustrate, be not limited to the utility model.In the following description, for the thorough to the utility model is provided, a large amount of specific detail have been set forth.Yet it is obvious that for those of ordinary skills: needn't adopt these specific detail to carry out the utility model.In other instances,, do not specifically describe known circuit, material or method for fear of obscuring the utility model.
In whole specification, " embodiment ", " embodiment ", " example " or mentioning of " example " are meaned: the special characteristic, structure or the characteristic that combine this embodiment or example to describe are comprised among at least one embodiment of the utility model.Therefore, phrase " in one embodiment ", " in an embodiment ", " example " or " example " that occurs in each place of whole specification differs to establish a capital and refers to same embodiment or example.In addition, can make up specific characteristic, structure or property combination in one or more embodiment or example with any suitable combination and/or son.In addition, it should be understood by one skilled in the art that at this accompanying drawing that provides all be for illustrative purposes, and accompanying drawing is not necessarily to draw in proportion.Should be appreciated that when claiming that element " is couple to " or during " being couple to " another element, it can be directly to couple or be couple to another element or can have intermediary element.On the contrary, when claiming that element " directly is couple to " or during " directly being couple to " another element, not having intermediary element.Identical Reference numeral indication components identical.Term used herein " and/or " comprise any and all combinations of one or more relevant projects of listing.
Fig. 1 schematically shows the section Figure 100 according to the High-tension Switch Devices of the utility model one embodiment.As shown in Figure 1, High-tension Switch Devices comprises: substrate 101 has first type and mixes; Be formed on the epitaxial loayer 120 on the substrate; Be formed on drain region 103 and source region 102 in the epitaxial loayer 120, wherein said source region 102 has first type doping with the substrate same type; Said drain region 103 has second type doping with the substrate opposite types; Drift region 104 between said source region 102 and said drain region 103; The grid oxygen 10 in source region, cover part 102; The field oxygen 107 of other epitaxial loayer parts outside covering gate oxygen 10 covers; Be formed on the grid part 110 on the grid oxygen 10; And form the snakelike polysilicon segment 111 on the oxygen 107 on the scene; Said snakelike polysilicon segment 111 has first end and second end; Its first end contacts with said drain region 106; But separated, said snakelike polysilicon segment 111 is positioned on the said drift region 104 its second end in vertical direction near said grid part 110.
In one embodiment, said High-tension Switch Devices also comprises: be formed at first heavily doped region 105, second heavily doped region 116 in the source region 102; Be formed at the 3rd heavily doped region 106 in the drain region 103; Said first heavily doped region 105 and the 3rd heavily doped region 106 have second type and mix, and said second heavily doped region 116 has first type and mixes.
In one embodiment, said High-tension Switch Devices also comprises: the source electrode 108 that contacts with second heavily doped region 116 with first heavily doped region 105; The drain electrode 109 that contacts with the 3rd heavily doped region 106.
In one embodiment, said grid part 110 adopts polysilicon.
In one embodiment, said High-tension Switch Devices comprises MOS memory (MOSFET) or junction field effect transistor (JFET).When High-tension Switch Devices was N type device, said first type was doped to the P type, and said second type is doped to the N type; When High-tension Switch Devices was P type device, said first type was doped to the N type, and said second type is doped to the P type.
In embodiment illustrated in fig. 1, said High-tension Switch Devices comprises N type MOSFET, and its first type is doped to the P type, and second type is doped to the N type.
In one embodiment, grid oxygen 10 includes silicon dioxide (SiO2) with an oxygen 107.But those skilled in the art will realize that a said grid oxygen and an oxygen can also comprise other dielectric.
Fig. 2 schematically shows the section Figure 200 according to the High-tension Switch Devices of the utility model one embodiment.High-tension Switch Devices shown in Figure 2 is similar with High-tension Switch Devices shown in Figure 1; Different with section Figure 100 of High-tension Switch Devices shown in Figure 1 is; In embodiment illustrated in fig. 2; The drift region 104 of High-tension Switch Devices comprises a plurality of light doping sections 114 (N-as shown in Figure 1) and a plurality of the 3rd doped region 117 (N), and said light doping section 114 and the 3rd doped region 117 alternately are placed in the drift region 104 successively.Wherein the dopant concentration level of the 3rd doped region is the doped region of drain region 103 dopant concentration level; The dopant concentration level of heavily doped region (N+) is higher than the doped region of drain region 103 dopant concentration level, and the dopant concentration level of light doping section (N-) is lower than the doped region of drain region 103 dopant concentration level; That is to say that the dopant concentration level of light doping section is less than the dopant concentration level of the 3rd doped region, the dopant concentration level of the 3rd doped region is less than the dopant concentration level of heavily doped region.In one embodiment, said light doping section and said the 3rd doped region all have the doping of second type.
In one embodiment, second end of said snakelike polysilicon segment 111 is drawn through metal wire 112, and is connected to reference to ground (shown in Fig. 2 dotted line) through resistor 113.But those skilled in the art will realize that in other embodiments, also can on said snakelike polysilicon segment 111, choose any appropriate a bit, it is drawn through metal wire.
Fig. 3 schematically shows the vertical view 300 according to the High-tension Switch Devices of the utility model one embodiment.As shown in Figure 3, said snakelike polysilicon segment 111 is repeatedly circuitous in drift region 104, increasing the length of snakelike polysilicon segment 111, thereby increases its resistance value.
In one embodiment, the resistance value scope of polysilicon segment 111 is 3 * 10
6Ω～5 * 10
6Ω.As in one embodiment, the resistance value of polysilicon segment 111 is 4 * 10
6Ohm.
In one embodiment, the resistance of said resistor 113 is below 1/50 of resistance value of said snakelike polysilicon segment 111.
Because snakelike polysilicon segment 111 is repeatedly circuitous in drift region 104, has increased its resistance value, so the high pressure drop of High-tension Switch Devices drain electrode will drop on the snakelike polysilicon segment 111.Through metal wire second end or other any appropriate points of snakelike polysilicon segment 111 are drawn, then can obtain the corresponding drain electrode information of voltage.
Because the high pressure of High-tension Switch Devices drain electrode will drop on the snakelike polysilicon segment 111, therefore, resistor 113 regions are the area of low pressure.Then resistor 113 and metal wire couple the node place, can obtain reflecting the detection voltage of High-tension Switch Devices drain voltage.This detects the magnitude of voltage lower (as less than 7V) of voltage, and therefore the voltage level requirement of coincidence control circuit can be transported to control circuit, and to realize functions such as the UVLO of system, OVP, its equivalent circuit diagram is seen Fig. 4.
Fig. 5 schematically shows the profile 500 according to the High-tension Switch Devices of another embodiment of the utility model.High-tension Switch Devices shown in Figure 5 is similar with High-tension Switch Devices shown in Figure 1, and different with High-tension Switch Devices shown in Figure 1 is that High-tension Switch Devices shown in Figure 5 further comprises: be formed at the base 115 in the source region 102, said base 115 has first type and mixes.
High-tension Switch Devices shown in Figure 5 comprises snakelike polysilicon segment 111, so the drain electrode high pressure drop of High-tension Switch Devices will drop on the snakelike polysilicon segment 111.Through metal wire second end or other any appropriate points of polysilicon segment 111 are drawn, can obtain the corresponding drain electrode information of voltage, promptly detect voltage.This detects the magnitude of voltage lower (as less than 7V) of voltage, and therefore the voltage level requirement of coincidence control circuit can be transported to control circuit, to realize functions such as the UVLO of system, OVP.
Can find out that from above each embodiment the High-tension Switch Devices that the utility model proposes need not additional pads, the simple realization drain voltage detects, and this high tension apparatus need not big improvement to original manufacture craft, the High-tension Switch Devices good reliability that makes making.
Though described the utility model with reference to several exemplary embodiments, should be appreciated that used term is explanation and exemplary and nonrestrictive term.Because the utility model practical implementation and do not break away from the spirit or the essence of utility model in a variety of forms; So be to be understood that; The foregoing description is not limited to any aforesaid details; And should in enclose spirit that claim limited and scope, explain widely, therefore fall into whole variations and remodeling in claim or its equivalent scope and all should be the claim of enclosing and contain.
Claims (10)
1. a High-tension Switch Devices is characterized in that, said High-tension Switch Devices comprises:
Substrate has first type and mixes;
Be formed on the epitaxial loayer on the substrate;
Be formed on drain region and source region in the epitaxial loayer, wherein said source region has first type mixes, and said drain region has second type and mixes;
Drift region between said source region and said drain region;
The grid oxygen in source region, cover part;
The field oxygen of other epitaxial loayer parts outside covering gate oxygen covers;
Be formed on the grid part on the grid oxygen; And
Form the snakelike polysilicon segment on the oxygen on the scene; Wherein said snakelike polysilicon segment has first end and second end; Its first end contacts with said drain region, but separated, said snakelike polysilicon segment is positioned on the said drift region its second end in vertical direction near said grid part.
2. High-tension Switch Devices as claimed in claim 1 is characterized in that,
Said High-tension Switch Devices comprises MOS memory or junction field effect transistor;
Said first type is doped to the P type, and said second type is doped to the N type.
3. High-tension Switch Devices as claimed in claim 1 is characterized in that,
Said High-tension Switch Devices comprises MOS memory or junction field effect transistor;
Said first type is doped to the N type, and said second type is doped to the P type.
4. High-tension Switch Devices as claimed in claim 1 is characterized in that, the resistance value scope of said snakelike polysilicon segment is 3 * 10
6Ω～5 * 10
6Ω.
5. High-tension Switch Devices as claimed in claim 1 is characterized in that, second end of said snakelike polysilicon segment is drawn through metal wire, and is connected to reference to ground through resistor.
6. High-tension Switch Devices as claimed in claim 4 is characterized in that, the resistance of said resistor is below 1/50 of resistance value of said snakelike polysilicon segment.
7. High-tension Switch Devices as claimed in claim 1 is characterized in that, said drift region comprises a plurality of light doping sections and a plurality of the 3rd doped region, and said light doping section and the 3rd doped region alternately are placed in the drift region successively; The dopant concentration level of wherein said light doping section is lower than the dopant concentration level of said the 3rd doped region.
8. High-tension Switch Devices as claimed in claim 1 is characterized in that said High-tension Switch Devices further comprises the base that is formed at said source region, and said base has first type and mixes.
9. High-tension Switch Devices as claimed in claim 1 is characterized in that, said High-tension Switch Devices further comprises:
The source electrode that contacts with second heavily doped region with first heavily doped region; And
The drain electrode that contacts with the 3rd heavily doped region.
10. High-tension Switch Devices as claimed in claim 1 is characterized in that, said grid part adopts polysilicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012201673359U CN202523717U (en) | 2012-04-19 | 2012-04-19 | High-voltage switch device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012201673359U CN202523717U (en) | 2012-04-19 | 2012-04-19 | High-voltage switch device |
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| CN202523717U true CN202523717U (en) | 2012-11-07 |
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| CN2012201673359U Expired - Lifetime CN202523717U (en) | 2012-04-19 | 2012-04-19 | High-voltage switch device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102623509A (en) * | 2012-04-19 | 2012-08-01 | 成都芯源系统有限公司 | High-voltage switch device and manufacturing method thereof |
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2012
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102623509A (en) * | 2012-04-19 | 2012-08-01 | 成都芯源系统有限公司 | High-voltage switch device and manufacturing method thereof |
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| GR01 | Patent grant | ||
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Granted publication date: 20121107 |
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