CN202494536U - Pressure sensor pressure sensitive element coated with parylene - Google Patents
Pressure sensor pressure sensitive element coated with parylene Download PDFInfo
- Publication number
- CN202494536U CN202494536U CN2012200509268U CN201220050926U CN202494536U CN 202494536 U CN202494536 U CN 202494536U CN 2012200509268 U CN2012200509268 U CN 2012200509268U CN 201220050926 U CN201220050926 U CN 201220050926U CN 202494536 U CN202494536 U CN 202494536U
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- Prior art keywords
- pressure
- parylene
- coated
- base
- parylene coating
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- Expired - Lifetime
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- 229920000052 poly(p-xylylene) Polymers 0.000 title claims abstract description 46
- 238000000576 coating method Methods 0.000 claims abstract description 37
- 239000011248 coating agent Substances 0.000 claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 34
- 239000010703 silicon Substances 0.000 claims abstract description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000000741 silica gel Substances 0.000 claims abstract description 11
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 11
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 239000002184 metal Substances 0.000 abstract description 8
- 238000005260 corrosion Methods 0.000 abstract description 4
- 238000009413 insulation Methods 0.000 abstract description 4
- 238000005336 cracking Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229920008128 Ameripol Polymers 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910001867 inorganic solvent Inorganic materials 0.000 description 1
- 239000003049 inorganic solvent Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000000123 paper Substances 0.000 description 1
- 239000011236 particulate material Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000012254 powdered material Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 125000006839 xylylene group Chemical group 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
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Abstract
The utility model discloses a pressure sensor pressure sensitive element coated with parylene, wherein the pressure sensor pressure sensitive element has good waterproof performance, good anti-corrosion performance and good insulation performance. A base (5) is capped and connected with a cap (3), a silicon pressure chip (1) is connected onto the base inside the cap, and electrical-conductive metal wires (2) are connected between the silicon pressure chip and pins connected on the base. The base, the silicon pressure chip, the electrical-conductive metal wires, and surfaces of pin ends which are connected with the electrical-conductive metal wire are coated with a parylene coating (6). The periphery of the silicon pressure chip whose surface is coated with the parylene coating, the electrical-conductive metal wires whose surfaces are coated with the parylene coating, and the pin ends whose surfaces are coated with the parylene coating and which are connected with the electrical-conductive metal wires are integrally sealed and connected with a silica gel layer (4). The pressure sensor pressure sensitive element of the utility model is adapted to a pressure sensor for detecting gas pressure and the like.
Description
Technical field
The utility model relates to pressure transducer, particularly the pressure-sensitive device in the pressure transducer.
Background technology
Silicon pressure sensor is a kind of wirking pressure sensor.The core component of the pressure-active element of this sensor is the Silicon pressure chip.Resistance value when the deformation of Silicon pressure chip pressurized on the chip changes, and measures this variable quantity, obtains corresponding force value.This sensor is the piezo-resistive silicon pressure transducer.The pressure/capacitance type silicon pressure sensor is also arranged, and it is based on the pressure variation and causes what the principle of capacitance variations was processed.
Fig. 1 is a kind of pressure-active element structural representation of piezo-resistive silicon pressure transducer.Silicon pressure chip a in this pressure-active element goes up through microelectronic integrated circuit technology and is equipped with the diffusion resistance that constitutes Wheatstone bridge (Fig. 2 shows); The resistance of diffusion resistance changes on when distortion chip when the chip pressurized, Vout+ shown in Figure 2 and Vout-is held obtain a differential voltage signal.Conductive wire b is that connection Silicon pressure chip a and base e go up the lead between the stitch among Fig. 1, and block c and silica gel layer d are used to protect Silicon pressure chip a and conductive wire b.
Block c and silica gel layer d shown in Figure 1 can play the certain protection effect to the Silicon pressure chip, as strengthen anti-frontal impact ability, prevent that to a certain extent impurity from depositing on Silicon pressure chip a and the conductive wire b.But because silica gel has certain fluidity; The shock and vibration that receive along with sensor; In the pressure-active element among the silica gel layer d silica gel run out of probably the block c outside, chip, conductive wire, stitch are directly exposed in the external pressure medium (liquid state or gaseous state), thereby produce following defective:
Silicon pressure chip, conductive wire and the stitch of pressure-active element were all charged when 1, the waterproof ability gap sensor was worked, in case electrification device has steam to get into, just possibly cause working sensor undesired.
2, the material of anti-corrosion capability differential pressure photosensitive elements and pressure medium contact portion has metal, silicon dioxide etc.Metal is corroded easily, and tinsel comes off or ruptures and will cause sensor to be scrapped.
3, to differ from one be that Silicon pressure chip in the pressure-active element, conductive wire, stitch directly contact with pressure medium to insulating property, causes the poor insulativity of electrification device and pressure medium; The 2nd, the bee-line of electrification device and base (being the distance of stitch and base) is merely 1mm, causes the poor insulativity of electrification device and pressure-active element base.
Summary of the invention
The utility model will solve the problem of silicon pressure sensor pressure-active element water resistance, Corrosion Protection and insulating property difference; The pressure transducer pressure-active element that for this reason provides a kind of Parylene of the utility model to film, this sensor pressure-active element waterproof, anticorrosion and good insulation preformance.
For addressing the above problem; The technical scheme that the utility model adopts is that cover is connected with block on base; Be connected with the Silicon pressure chip on the base in the block; Connect on Silicon pressure chip and the base and be connected with conductive wire between the stitch; Its special character is, the surfaces coated of said base, Silicon pressure chip, conductive wire and the said stitch end that is connected with conductive wire is covered with the Parylene coating, and the peripheral integraty envelope of the said stitch end that is connected with conductive wire of the conductive wire of the Silicon pressure chip of said surface-coated Parylene coating, surface-coated Parylene coating and surface-coated Parylene coating is connected with silica gel layer.
The said Parylene coating thickness of the utility model is 3 μ m～8 μ m.
The typical thickness of said Parylene coating is 5 μ m.
Below in conjunction with accompanying drawing the utility model is described further.
Description of drawings
Fig. 1 is a pressure transducer pressure-active element structural representation in the prior art;
Fig. 2 is the Wheatstone bridge circuit figure on the Silicon pressure chip in the sensor pressure-active element;
Fig. 3 is workpiece and goes up Parylene coating synoptic diagram;
Fig. 4 is workpiece and goes up common coating synoptic diagram;
Fig. 5 is a structural representation after the assembly Parylene in the utility model is filmed;
Fig. 6 is the utility model structural representation;
Fig. 7 is the coating operation synoptic diagram of the utility model.
Parylene (Parylene) is a kind of novel thermoplastic coating material of middle nineteen sixties exploitation in last century, and it is a kind of xylylene po1ymer, by different molecular structures, can be divided into N type, C type, D type, HT type etc.
Parylene film (Parylene Coating) adopt the vacuum vapor deposition coating process, evenly apply one deck Parylene coating for surface of the work.Parylene is filmed and is made up of distillation, cracking and deposition three process, and is as shown in Figure 6.
1, distillation is sublimed into gaseous state with solid-state starting material Parylene in sublimation chamber under vacuum state and the 120-180 ℃ condition;
2, cracking is at cracking room, and 650-700 ℃ of gaseous state starting material are cracked into the activated monomer with response characteristic;
3, be deposited on the settling chamber, activated monomer at room temperature is deposited on surface of the work and polymerization.
Gaseous monomer gets into the settling chamber; At first spread in surface of the work, after being adsorbed onto each surface, begin polymerization and crystallization, directly form solid; Any stage in the whole process can not present liquid state, thus it can not assemble, bridge joint or produce the liquid level bending because of syphonic effect.
Parylene is filmed and can be coated to the surface of workpiece different shape, comprises sharp-pointed seamed edge, slit, imperceptible pin hole and inside surface, and does not produce the dead angle.Even, the fine and close free of pinholes of Parylene coating thickness, transparent unstressed, do not contain auxiliary agent, do not damage workpiece, excellent electrical insulating property and protective arranged; Have extreme chemical inertness simultaneously, in rugged surroundings such as salt fog, mould, humidity, corrosivity, have superior isolating and protecting function.
The Parylene coating thickness is very thin; Be generally 1 μ m～50 μ m; Mechanical shock absorption and load characteristic are minimum; Can be coated in the surface of many kinds of matrixes, these matrixes comprise glass, metal, paper, resin, plastics, pottery, ferrite, even ameripol and matrixes such as Powdered and particulate material.
Fig. 3, Fig. 4 are the effect comparison of Parylene coating and common coating.The former is thickness uniformity everywhere on fin, depression and plane, and the latter then denys.
Embodiment
The pressure transducer pressure-active element that Parylene is filmed; Cover is connected with block 3 on the base 5; Be connected with Silicon pressure chip 1 on the base in the block; Connect on Silicon pressure chip and the base and be connected with conductive wire 2 between the stitch; It is characterized in that the surfaces coated of said base, Silicon pressure chip, conductive wire and the said stitch end that is connected with conductive wire is covered with Parylene coating 6, the peripheral integraty envelope of the said stitch end that is connected with conductive wire of the conductive wire of the Silicon pressure chip of said surface-coated Parylene coating, surface-coated Parylene coating and surface-coated Parylene coating is connected with silica gel layer 4.
Said Parylene coating thickness is 3 μ m～8 μ m, is preferably 5 μ m.
The utility model at first is to accomplish base, Silicon pressure chip, conductive wire that making is assembled and the stitch end that is connected with conductive wire Parylene to film, and it is as shown in Figure 5 to be coated with membrane module.The back injection silica gel of filming forms silica gel layer 4, seals up block again, the making of the pressure transducer pressure-active element that the completion Parylene is filmed.
The utility model is because coating itself is very thin, and mechanical shock absorption and load characteristic are minimum, and is also minimum to the influence of the sensitivity of Silicon pressure chip in the pressure transducer pressure-active element and linear characteristic.After filming, sensor improves a lot on following performance.
1, water resistance: because the superior isolation performance of Parylene coating, even pressure medium has steam, sensor also can operate as normal.
2, Corrosion Protection: because the extreme chemical inertness of Parylene coating makes sensor prevent that organic solvent, anti-inorganic solvent and acid-proof performance are high.
3, insulating property: because the superior insulation characterisitic of Parylene coating (the dc breakdown voltage that the thick anti-1000V of 5 μ m is above) makes sensor have stable good insulation performance performance.
4, mechanical property: because superior physics and the mechanical property of Parylene coating can better be fitted on the base silicon diaphragm in the pressure transducer pressure-active element, strength of joint wiry has increased by 5～10 times.
Claims (3)
1. the Parylene pressure transducer pressure-active element of filming; Base (5) is gone up cover and is connected with block (3); Be connected with Silicon pressure chip (1) on the base in the block; Connect on Silicon pressure chip and the base and be connected with conductive wire (2) between the stitch; It is characterized in that the surfaces coated of said base, Silicon pressure chip, conductive wire and the said stitch end that is connected with conductive wire is covered with Parylene coating (6), the peripheral integraty envelope of the said stitch end that is connected with conductive wire of the conductive wire of the Silicon pressure chip of said surface-coated Parylene coating, surface-coated Parylene coating and surface-coated Parylene coating is connected with silica gel layer (4).
2. pressure-active element as claimed in claim 1 is characterized in that said Parylene coating thickness is 3 μ m～8 μ m.
3. pressure-active element as claimed in claim 1 is characterized in that said Parylene coating thickness is 5 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200509268U CN202494536U (en) | 2012-02-17 | 2012-02-17 | Pressure sensor pressure sensitive element coated with parylene |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200509268U CN202494536U (en) | 2012-02-17 | 2012-02-17 | Pressure sensor pressure sensitive element coated with parylene |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202494536U true CN202494536U (en) | 2012-10-17 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012200509268U Expired - Lifetime CN202494536U (en) | 2012-02-17 | 2012-02-17 | Pressure sensor pressure sensitive element coated with parylene |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202494536U (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105181118A (en) * | 2015-10-17 | 2015-12-23 | 中北大学 | Broadband MEMS vector hydrophone simulating seal beard |
| CN108966565A (en) * | 2017-05-18 | 2018-12-07 | 柯惠Lp公司 | Seal printed circuit board |
| CN109387323A (en) * | 2018-12-13 | 2019-02-26 | 江西新力传感科技有限公司 | A kind of pressure sensor |
| CN110686755A (en) * | 2019-09-11 | 2020-01-14 | 上海三高计算机中心股份有限公司 | Battery power supply liquid level monitoring terminal for long and narrow pipeline wall-attached installation |
| CN113629005A (en) * | 2021-06-29 | 2021-11-09 | 北京大学 | Fan-out type packaging and burying method |
| CN114405791A (en) * | 2022-01-28 | 2022-04-29 | 上海派拉纶生物技术股份有限公司 | Protective coating for sensitive element of sensor |
| CN116443803A (en) * | 2023-04-19 | 2023-07-18 | 北京大学 | Silicon piezoresistive pressure sensor packaging structure and packaging method |
-
2012
- 2012-02-17 CN CN2012200509268U patent/CN202494536U/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105181118A (en) * | 2015-10-17 | 2015-12-23 | 中北大学 | Broadband MEMS vector hydrophone simulating seal beard |
| CN108966565A (en) * | 2017-05-18 | 2018-12-07 | 柯惠Lp公司 | Seal printed circuit board |
| CN109387323A (en) * | 2018-12-13 | 2019-02-26 | 江西新力传感科技有限公司 | A kind of pressure sensor |
| CN110686755A (en) * | 2019-09-11 | 2020-01-14 | 上海三高计算机中心股份有限公司 | Battery power supply liquid level monitoring terminal for long and narrow pipeline wall-attached installation |
| CN113629005A (en) * | 2021-06-29 | 2021-11-09 | 北京大学 | Fan-out type packaging and burying method |
| CN114405791A (en) * | 2022-01-28 | 2022-04-29 | 上海派拉纶生物技术股份有限公司 | Protective coating for sensitive element of sensor |
| CN116443803A (en) * | 2023-04-19 | 2023-07-18 | 北京大学 | Silicon piezoresistive pressure sensor packaging structure and packaging method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20121017 |