CN202582797U - Impact-resistance pressure sensor - Google Patents
Impact-resistance pressure sensor Download PDFInfo
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- CN202582797U CN202582797U CN 201220092800 CN201220092800U CN202582797U CN 202582797 U CN202582797 U CN 202582797U CN 201220092800 CN201220092800 CN 201220092800 CN 201220092800 U CN201220092800 U CN 201220092800U CN 202582797 U CN202582797 U CN 202582797U
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Abstract
The utility model relates to the technical field of a sensor, and especially relates to an impact-resistance pressure sensor. The impact-resistance pressure sensor comprises a substrate, a cantilever beam, an electrode and an insulating layer. The insulating layer is arranged on the substrate. The electrode is arranged on the insulating layer. One end of the cantilever beam is disposed on the electrode and the other end of the cantilever beam is hung in the air. The length of the cantilever beam is set to be less than or equal to 50 micrometers. The length of a hung portion of the cantilever beam is set to be less than or equal to 10 micrometers. A conventional cantilever beam is usually 50 to 200 micrometers in length and is poor in high vibration and impact resistance. The length of the cantilever beam and the length of the hung portion of the cantilever beam are both shortened for improvement of high vibration and impact resistance, thereby effectively solving disadvantages that a sensor based on a cantilever beam is liable to damaged by vibration impact and enlarging an application scope of the sensor. Moreover, the impact-resistance pressure sensor is simple in structure, low in production cost and simple in manufacturing process.
Description
Technical field
The utility model relates to sensor technical field, relates in particular to a kind of Antiimpact pressure sensor.
Background technology
Sensor is a kind ofly can experience specified measuring range spare and convert the device or the device of available signal to according to certain rules, is made up of sensitive element and conversion element usually.It is a kind of pick-up unit; Can experience measured information; And can detected information be converted into according to certain rules the information output of electric signal or other desired forms; To satisfy requirements such as transmission of Information, processing, storage, demonstration, record and control, be the important step that realizes detection automatically and automatic control.
Pressure transducer is a kind of sensor the most commonly used in the industrial practice; It is widely used in various industrial automatic control environment, relates to numerous industries such as water conservancy and hydropower, railway traffic, intelligent building, production automatic control, Aero-Space, military project, petrochemical industry, oil well, electric power, boats and ships, lathe and pipeline.
In the prior art, semi-girder is the very general sensor construction of a kind of application, though there is multiple structure type, all have common characteristic: the one of which end is fixed, and the other end is unsettled.When external environment changed, its degree of crook or vibration performance changed, and through being installed in electrode or the device on the semi-girder, detecting these and changed, and then obtain the change amount of external environment.In order to increase change to improve the sensitivity that detects; The deviser tends to prolong the length of semi-girder, but can bring a problem like this: when receiving bigger mechanical vibration impact, semi-girder is easy to take place irreversible deformation; Cause device failure, limited its range of application.
Summary of the invention
The purpose of the utility model is to avoid weak point of the prior art and a kind of Antiimpact pressure sensor is provided; The sensor that this Antiimpact pressure sensor has solved based on semi-girder effectively is subject to the shortcoming that vibratory impulse damages; Enlarged the application of sensor scope; Sensor construction is simple, and production cost is low, and preparation technology is simple.
The purpose of the utility model realizes through following technical scheme.
A kind of Antiimpact pressure sensor; Include substrate, semi-girder, electrode and insulation course, said insulation course is arranged at said substrate, and said electrode is arranged at said insulation course; One end of said semi-girder is arranged at said electrode; The other end of said semi-girder is unsettled, and said semi-girder length is set to be less than or equal to 50 microns, and the length of said semi-girder overhanging portion is set to be less than or equal to 10 microns.
Preferably, said semi-girder length is set to 40 microns, and the length of said semi-girder overhanging portion is set to 8 microns.
Another is preferred, and said semi-girder length is set to 30 microns, and the length of said semi-girder overhanging portion is set to 6 microns.
Another is preferred, and said semi-girder length is set to 20 microns, and the length of said semi-girder overhanging portion is set to 4 microns.
Another is preferred, and said semi-girder is set to more than two or two, and said semi-girder parallel connection is provided with.
Preferred, said semi-girder is set to 2 to 999.
Further, said semi-girder is set to 30.
Another is preferred, and said semi-girder is set to 100.
Another is preferred; Said insulation course is set to the polycrystal carborundum layer; Said polycrystal carborundum layer comprises the silicon nitride sublayer of silicon chip sublayer, silicon dioxide sublayer and low stress that n mixes, and the silicon nitride sublayer of said silicon dioxide sublayer and low stress is arranged on the silicon chip sublayer of said n doping.
The beneficial effect of the utility model is following:
A kind of Antiimpact pressure sensor of the utility model; Include substrate, semi-girder, electrode and insulation course, insulation course is arranged at substrate, and electrode is arranged at insulation course; One end of semi-girder is arranged at electrode; The other end of semi-girder is unsettled, and semi-girder length is set to be less than or equal to 50 microns, and the length of semi-girder overhanging portion is set to be less than or equal to 10 microns.The semi-girder length of prior art is generally 50 to 200 microns; But the length of anti-high vibratory impulse ability, the utility model length and the semi-girder overhanging portion through shortening semi-girder has solved the shortcoming that is subject to the vibratory impulse damage based on the sensor of semi-girder effectively to improve the ability of anti-high vibratory impulse; Enlarged the application of sensor scope; Sensor construction is simple, and production cost is low, and manufacturing process is simple.
Description of drawings
Utilize accompanying drawing that the utility model is further specified, but the content in the accompanying drawing does not constitute any restriction to the utility model.
Fig. 1 is the structural representation of a kind of Antiimpact pressure sensor of the utility model.
Fig. 2 is the cross-sectional view of Fig. 1 along semi-girder length direction.
In Fig. 1 and Fig. 2, include:
Semi-girder 2,
Electrode 3,
Embodiment
In conjunction with following examples the utility model is described further.
A kind of Antiimpact pressure sensor, as depicted in figs. 1 and 2, include substrate 1, semi-girder 2, electrode 3 and insulation course 4; Insulation course 4 is arranged at substrate 1; Electrode 3 is arranged at insulation course 4, and an end of semi-girder 2 is arranged at electrode 3, and the other end of semi-girder 2 is unsettled; Semi-girder 2 length are set to be less than or equal to 50 microns, and the length of semi-girder 2 overhanging portions is set to be less than or equal to 10 microns.
Semi-girder 2 length of prior art are generally 50 to 200 microns; But the length of anti-high vibratory impulse ability, the utility model length and semi-girder 2 overhanging portions through shortening semi-girder 2 has solved the shortcoming that is subject to the vibratory impulse damage based on the sensor of semi-girder 2 effectively to improve the ability of anti-high vibratory impulse; Enlarged the application of sensor scope; Sensor construction is simple, and production cost is low, and manufacturing process is simple.
A kind of Antiimpact pressure sensor, other structure of present embodiment is identical with embodiment 1, and difference is: semi-girder 2 length are set to 40 microns, and the length of semi-girder 2 overhanging portions is set to 8 microns.The length through shortening semi-girder 2 and the length of semi-girder 2 overhanging portions improve the ability of the anti-high vibratory impulse of sensor.
A kind of Antiimpact pressure sensor, other structure of present embodiment is identical with embodiment 1, and difference is: semi-girder 2 length are set to 30 microns, and the length of semi-girder 2 overhanging portions is set to 6 microns.The length through shortening semi-girder 2 and the length of semi-girder 2 overhanging portions improve the ability of the anti-high vibratory impulse of sensor.
A kind of Antiimpact pressure sensor, other structure of present embodiment is identical with embodiment 1, and difference is: semi-girder 2 length are set to 20 microns, and the length of semi-girder 2 overhanging portions is set to 4 microns.The length through shortening semi-girder 2 and the length of semi-girder 2 overhanging portions improve the ability of the anti-high vibratory impulse of sensor.
embodiment 5.
A kind of Antiimpact pressure sensor, other structure of present embodiment is identical with embodiment 1, and difference is: semi-girder 2 is set to more than two or two, and semi-girder 2 parallel connections are provided with.Can cause the sensitivity of sensor to lack owing to shorten the length of semi-girder 2 and the length of semi-girder 2 overhanging portions; Therefore, parallelly connected a plurality of semi-girder 2 remedies because the transducer sensitivity loss that the contraction in length of semi-girder 2 contraction in lengths and semi-girder 2 overhanging portions causes.
embodiment 6.
A kind of Antiimpact pressure sensor, other structure of present embodiment is identical with embodiment 5, and difference is: semi-girder 2 is set to 30.As the sensor that common commercial is used, so not high to the requirement of its sensitivity, so being set to 30, semi-girder 2 can reach request for utilization.
In fact, the optional scope of the quantity of semi-girder 2 and electrode 3 is very big.Quantity is many more; Both contacts area are big more; The change amount of electric capacity is just big more, and electric capacity can influence sensor's response speed, so sensor's response speed also can increase; Therefore at present but this can increase the complexity and the size of devices of technology, and the quantity of semi-girder 2 is generally tens and does not wait to the hundreds of root.
Need to prove: the quantity of semi-girder 2 not merely is limited to 30, can be set to 2 to 999.
embodiment 7.
A kind of Antiimpact pressure sensor, other structure of present embodiment is identical with embodiment 5, and difference is: semi-girder 2 is set to 100.For the occasion that sensitivity is had relatively high expectations, can suitably increase the quantity of semi-girder 2, can be set to 100.
embodiment 8.
A kind of Antiimpact pressure sensor; Other structure of present embodiment is identical with embodiment 1; Difference is: insulation course 4 is set to the polycrystal carborundum layer; The polycrystal carborundum layer comprises the silicon nitride sublayer of silicon chip sublayer, silicon dioxide sublayer and low stress that n mixes, and the silicon nitride sublayer of silicon dioxide sublayer and low stress is arranged on the silicon chip sublayer of n doping.
Another technical matters that the utility model solves is the strain detecting that this sensor can be used for the oil well subsurface environment; And obtain and the suitable sensitivity of silicon resonance strain transducer at present; Can be in air work under the high temperature more than 300 degrees centigrade, can bear the impact of 10000 grams and not have the resonant of damage frequency drift.
Semi-girder 2 is selected semiconductor material with wide forbidden band, and is for example wear-resistant to improve the stability of device, anti-mechanical fatigue, and anti-physical shock, high temperature resistant, corrosion-resistant.Selectable wide-band gap material has the nitride of silit and III family element, uses radio-frequency sputtering, chemical vapor deposition (CVD), enhancing chemical meteorology deposition (PECVD) to prepare and get.
Electrode 3 materials can be metal, n type polysilicon, p type polysilicon; The nitride of silit and III family element; Insulation course 4 materials can be silicon dioxide (SiO2), silicon nitride, use magnetron sputtering, chemical vapor deposition (CVD), enhancing chemical vapor deposition (PECVD) to prepare and get.
Electrode 3 patterns, semi-girder 2 and insulation course 4 patterns through resist exposure, develop after, can get by wet etching or dry etching.
Semi-girder 2 can use static excitation, piezoelectric excitation, thermal excitation, magnetic pumping, memory metal to drive.
Sensor circuit can be an oscillatory circuit, also can be Huygens's electric bridge, and this sensor is regarded as a variable capacitance, perhaps a piezoresistive transducer.
Sensor circuit be positioned at sensor near, can be around it, also below above that.Sensor is connected with circuit through modes such as ultrasonic wire bonding lead-in wire or flip chip bondings.
Oscillatory circuit is meant: semi-girder 2 is placed an oscillatory circuit, output be the frequency signal of semi-girder 2 vibration.Compare with present other semi-girder 2 circuit, sensor circuit uses oscillatory circuit to have the highest sensitivity and accuracy of detection, can satisfy the requirement of high Precision Detection.
Semi-girder 2 is applied to sensor, can also use Huygens's electric bridge to can be used for detecting this changes in capacitance the capacitance variations between semi-girder 2 and the electrode 3 as sensor's response.
The making flow process of the utility model is following:
On the silicon chip that a n mixes, prepare the silicon nitride of layer of silicon dioxide (SiO2) and one deck low stress, serve as insulation course 4,, reserve the position that is electrically connected with substrate 1 through after the photoetching corrosion; Use chemical vapor deposition (CVD) prepared one deck n type DOPOS doped polycrystalline silicon in its surface,, obtain electrical connecting wires through after the photoetching corrosion; Use chemical vapor deposition (CVD) process deposits layer of silicon dioxide (SiO2) sacrifice layer, use automatic etching machine on sacrifice layer, to punch, with the silit semi-girder 2 that obtains deposition next electrical connecting position with polysilicon layer.Use chemical vapor deposition (CVD) to prepare one deck silicon carbide film, and use the method for photoetching, dry etching to obtain required pattern.At last with promptly obtaining silit Antiimpact pressure sensor after etch mask and the sacrifice layer removal.
Should be noted that at last; Above embodiment only be used to explain the utility model technical scheme but not to the restriction of the utility model protection domain; Although the utility model has been done detailed description with reference to preferred embodiment; Those of ordinary skill in the art should be appreciated that and can make amendment or be equal to replacement the technical scheme of the utility model, and do not break away from the essence and the scope of the utility model technical scheme.
Claims (9)
1. Antiimpact pressure sensor; Include substrate, semi-girder, electrode and insulation course, said insulation course is arranged at said substrate, and said electrode is arranged at said insulation course; One end of said semi-girder is arranged at said electrode; The other end of said semi-girder is unsettled, it is characterized in that: said semi-girder length is set to be less than or equal to 50 microns, and the length of said semi-girder overhanging portion is set to be less than or equal to 10 microns.
2. a kind of Antiimpact pressure sensor according to claim 1 is characterized in that: said semi-girder length is set to 40 microns, and the length of said semi-girder overhanging portion is set to 8 microns.
3. a kind of Antiimpact pressure sensor according to claim 1 is characterized in that: said semi-girder length is set to 30 microns, and the length of said semi-girder overhanging portion is set to 6 microns.
4. a kind of Antiimpact pressure sensor according to claim 1 is characterized in that: said semi-girder length is set to 20 microns, and the length of said semi-girder overhanging portion is set to 4 microns.
5. a kind of Antiimpact pressure sensor according to claim 1 is characterized in that: said semi-girder is set to more than two or two, and said semi-girder parallel connection is provided with.
6. a kind of Antiimpact pressure sensor according to claim 5 is characterized in that: said semi-girder is set to 2 to 999.
7. a kind of Antiimpact pressure sensor according to claim 6 is characterized in that: said semi-girder is set to 30.
8. a kind of Antiimpact pressure sensor according to claim 6 is characterized in that: said semi-girder is set to 100.
9. a kind of Antiimpact pressure sensor according to claim 1; It is characterized in that: said insulation course is set to the polycrystal carborundum layer; Said polycrystal carborundum layer comprises the silicon nitride sublayer of silicon chip sublayer, silicon dioxide sublayer and low stress that n mixes, and the silicon nitride sublayer of said silicon dioxide sublayer and low stress is arranged on the silicon chip sublayer of said n doping.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220092800 CN202582797U (en) | 2012-03-13 | 2012-03-13 | Impact-resistance pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220092800 CN202582797U (en) | 2012-03-13 | 2012-03-13 | Impact-resistance pressure sensor |
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| Publication Number | Publication Date |
|---|---|
| CN202582797U true CN202582797U (en) | 2012-12-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220092800 Expired - Fee Related CN202582797U (en) | 2012-03-13 | 2012-03-13 | Impact-resistance pressure sensor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104030230A (en) * | 2013-03-08 | 2014-09-10 | 先技股份有限公司 | Micro-electromechanical device |
| CN108827136A (en) * | 2018-04-16 | 2018-11-16 | 西南石油大学 | A method of flexible strain transducer is prepared using waste and old thermosetting resin |
-
2012
- 2012-03-13 CN CN 201220092800 patent/CN202582797U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104030230A (en) * | 2013-03-08 | 2014-09-10 | 先技股份有限公司 | Micro-electromechanical device |
| TWI568662B (en) * | 2013-03-08 | 2017-02-01 | 先技股份有限公司 | Mems apparatus |
| CN108827136A (en) * | 2018-04-16 | 2018-11-16 | 西南石油大学 | A method of flexible strain transducer is prepared using waste and old thermosetting resin |
| CN108827136B (en) * | 2018-04-16 | 2019-07-02 | 西南石油大学 | A method of flexible strain transducer is prepared using waste and old thermosetting resin |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121205 Termination date: 20160313 |
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| CF01 | Termination of patent right due to non-payment of annual fee |