CN202486043U - System for detecting microcrack of silicon chip - Google Patents
System for detecting microcrack of silicon chip Download PDFInfo
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- CN202486043U CN202486043U CN2012200964376U CN201220096437U CN202486043U CN 202486043 U CN202486043 U CN 202486043U CN 2012200964376 U CN2012200964376 U CN 2012200964376U CN 201220096437 U CN201220096437 U CN 201220096437U CN 202486043 U CN202486043 U CN 202486043U
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Abstract
The utility model discloses a system for detecting a microcrack of a silicon chip. The system comprises a laser controller, a rotating mirror controller, a laser source, a reflecting mirror, a rotating mirror, an imaging lens, a linear array charge coupled device, a push-broom driving device, a computer and an objective table, and is characterized in that the laser source, the reflecting mirror, the rotating mirror, the imaging lens and the linear array charge coupled device are sequentially connected through an optical path; an output signal of the linear array charge coupled device is connected with the computer through a cable; the computer is connected with the laser controller, the rotating mirror controller and the push-broom driving device; a stepper motor of the push-broom driving device is connected with the objective table through a ball screw; and the detected silicon chip is arranged on the objective table. The rotating mirror and the push-broom driving device are matched to realize the non-contact and nondestructive laser scanning of the silicon chip, and acquired infrared radiation image data is intelligently processed and analyzed to judge the integrity of the silicon chip.
Description
Technical field
The utility model relates to product detection technique field, specifically a kind of silicon chip micro-crack detection system.
Background technology
Silicon chip is that to generate silicon be the starting material of solar cell, is in the solar cell process producing silicon, can on little plate, apply external force inevitably, on the surface of plate, will occur the crackle that length, direction have nothing in common with each other sometimes.These have the cell panel of crackle, in case be mounted in the solar battery group, will have a strong impact on the performance of entire cell module.In traditional production run, the integrity of these silicon chips is mainly leaned on human eye detection.The method of this manual detection not only wastes time and energy, and because the singularity of silicon sheet material, the phenomenon of omission occurs through regular meeting, and this has brought difficulty just for the quality of raising product.Therefore be necessary to design a kind of automatic checkout system, can carry out contactless, detection with no damage to the integrity of silicon chip, the bad sheet that will have crackle is separated automatically.
The utility model content
The purpose of the utility model is to overcome the deficiency of existing detection means, provides a kind of and can be advantageously applied to the system that the silicon chip integrity detects, the system that particularly can the crackle on the silicon chip be detected automatically.Because mostly silicon chip is higher by reflectivity; The material that emissivity is lower constitutes; So this crack of silicon chip detection system uses laser as excitation source; The laser energy that receives the cell panel surface reflection through infrared remote receiver produces the infrared signal of this point, through pushing away the scanning of sweeping device both direction, can obtain the infrared image signal of whole silicon wafer again.Use the Intelligent Recognition analysis software that image is handled at last, promptly can detect silicon chip and whether have crackle, for the integrity of silicon chip detects a kind of noncontact, the undamaged new mode of providing.
The purpose of the utility model is achieved in that
A kind of silicon chip micro-crack detection system; Comprise laser controller, rotate the mirror controller, lasing light emitter, catoptron, rotation mirror, imaging len, linear array charge coupled cell, push away and sweep drive unit, computing machine and objective table, characteristics are that lasing light emitter, catoptron, rotation mirror, imaging len, linear array charge coupled cell become light path to connect successively; The output signal cable of linear array charge coupled cell connects computing machine; Computing machine connects laser controller, rotates the mirror controller and push away and sweep drive unit; Push away the stepper motor of sweeping drive unit and connect objective table through ball-screw; Silicon chip places on the objective table.
Described rotation mirror is three mirror contact lens or polygonal mirror.
The rotational frequency of described rotation mirror and the translational velocity of objective table coefficient in proportion are complementary.
The laser beam that described lasing light emitter emission diameter is 10～50 microns.
The utility model light path connects: after the lasing light emitter laser beam passes mirror reflects; Shine and rotate on the mirror; Rotate mirror according to certain frequency rotation, laser beam is reflexed to tested silicon chip surface, and realize its surperficial line scanning; By the laser energy of cell panel surface reflection through being imaged on the linear array charge coupled cell behind the imaging len, charge coupled cell with image data acquiring in computing machine.
Circuit connects: the charge coupled cell output signal cable connects computing machine, and computing machine connects laser controller, rotates the mirror controller and push away and sweep drive unit; Laser controller is connected on the lasing light emitter, the work of control lasing light emitter; Rotate the mirror controller and be connected on the rotation mirror, control is rotated mirror and is rotated according to certain frequency; Push away the stepper motor of sweeping drive unit and connect objective table through ball-screw, silicon chip places on the objective table, pushes away to sweep the translation of drive unit driving objective table, realizes pushing away of silicon chip swept.
Through rotating the mirror reflection laser beam silicon chip surface line scanning and objective table translation are realized the column scan to cell panel, can obtain whole tested silicon chip laser light reflected energygram picture at last.This view data has comprised the infrared signal of silicon chip surface; Promptly can on display, show through Computer Processing; By the Intelligent Recognition processing module in the computing machine this infrared image is carried out Treatment Analysis then; Promptly can the crack detection that silicon chip exists be come out, thus the automatic detection of realization silicon chip surface integrity.
Above-mentioned excitation source is the lasing light emitter that can launch diameter 10-50 micron laser beam, and its transmission frequency can be selected as required flexibly; Said rotation mirror can be three mirror contact lens or polygonal mirror; Said linear array charge coupled cell is infrared charge coupled cell, and is different according to the material of tested cell panel, also can use common monochrome or colour charge coupling element.
The utility model is mapped to laser beam on the silicon chip surface through rotating mirror reversal; Realization is to the transient heating of silicon chip surface analyzing spot; Use the linear array charge coupled cell to gather the infrared energy of cell panel radiation; Push away through detection and to sweep on the entire cell plate image that the back obtains, can judge promptly whether this silicon chip is intact to sudden change information.This detection mode does not contact tested silicon chip surface, can in testing process, not cause damage to cell panel, can substitute artificial the realization and detect automatically.
Description of drawings
Fig. 1 is the utility model structural representation.
Embodiment
Provide one of the utility model embodiment preferably according to Fig. 1 below, in order to the architectural feature of explanation the utility model, technical feature and function point, rather than be used for limiting the scope of the utility model.
Consult Fig. 1; Lasing light emitter 3, catoptron 4, rotation mirror 5, imaging len 6, linear array charge coupled cell 7 become light path to connect successively in the present embodiment; After the laser beam that lasing light emitter 3 sends reflects through catoptron 4; Shine and rotate on the mirror 5, successively the delegation on the silicon chip 11 is scanned through the reflection of rotating mirror 5, the signal of silicon chip 11 radiation images on the linear array charge coupled cell 7 through imaging len 6.Computing machine 9 is connected respectively to laser controller 1, rotates mirror controller 2 and push away and sweep on the drive unit 8; Can make lasing light emitter 3 launch the needed laser beam of instrument through laser controller 1; Rotate mirror controller 2 and can control the rotational frequency of rotating mirror 5; Make it and push away the translational velocity of sweeping the objective table 10 that drive unit 8 driven and be complementary, realize the point by point scanning of whole silicon wafer 11 according to certain scale-up factor.Pushing away the stepper motor of sweeping drive unit 8 is connected on the objective table 10 through the high precision ball leading screw; Under the control of computing machine 9; Driving objective table 10 carries out the high precision translation; Make the silicon chip 11 on it carry out the laser scanning of directions X and Y direction, the signal cable of linear array charge coupled cell 7 is connected on the data collecting card of computing machine 9, accomplishes the image data acquiring of cell panel 11.
In the present embodiment, linear array charge coupled cell 7 adopts high speed linear array charge coupled cell IL-P1-4096, and lasing light emitter 3 emissions one beam diameter is the argon laser source of 20 microns laser beam.During instrument work; The laser beam of lasing light emitter 3 shines through catoptron 4 and rotates on the mirror 5; When rotation mirror 5 laser light reflected bundles were accomplished a line scanning of silicon chip 11, the data of the array charge-coupled element 7 of computing machine 9 read lines were swept drive unit 8 control objective tables 10 translation delegation forward through pushing away simultaneously; Prepare the scanning of next line, promptly can obtain the infrared radiation view data of whole silicon wafer 11 after scanning is accomplished.
The data acquisition and the analysis software that run on the computing machine 9 are mainly realized following function: instrument calibration, the data acquisition of linear array charge coupled cell, realtime graphic demonstration, Hardware configuration and control, image data format conversion and Intelligent Recognition and analysis etc.
The utility model has been realized contactless, laser scanning with no damage to silicon chip through rotating mirror and the cooperation that pushes away sweeping device, through Intelligent treatment and the analysis to the infrared radiation view data obtained, promptly can judge the integrity of silicon chip.Compare with traditional human eye detection means, the utility model has been realized the automatic detection of crackle fully, and the integrity that is applied to silicon chip detects, and can reduce the interference of human factor, and accuracy in detection is high, has important application value.
Claims (4)
1. silicon chip micro-crack detection system; Comprise laser controller (1), rotation mirror controller (2), lasing light emitter (3), catoptron (4), rotate mirror (5), imaging len (6), linear array charge coupled cell (7), push away and sweep drive unit (8), computing machine (9) and objective table (10), it is characterized in that lasing light emitter (3), catoptron (4), rotation mirror (5), imaging len (6), linear array charge coupled cell (7) become light path to connect successively; The output signal cable of linear array charge coupled cell (7) connects computing machine (9); Computing machine (9) connects laser controller (1), rotates mirror controller (2) and push away and sweep drive unit (8); Push away the stepper motor of sweeping drive unit (8) and connect objective table (10) through ball-screw; Silicon chip (11) places on the objective table (10).
2. silicon chip micro-crack detection system according to claim 1 is characterized in that described rotation mirror (5) is three mirror contact lens or polygonal mirror.
3. silicon chip micro-crack detection system according to claim 1, it is characterized in that described rotation mirror (5) rotational frequency and objective table (10) translational velocity in proportion coefficient be complementary.
4. silicon chip micro-crack detection system according to claim 1 is characterized in that the laser beam of 10～50 microns of described lasing light emitter (3) emission diameters.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200964376U CN202486043U (en) | 2012-03-15 | 2012-03-15 | System for detecting microcrack of silicon chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200964376U CN202486043U (en) | 2012-03-15 | 2012-03-15 | System for detecting microcrack of silicon chip |
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| CN202486043U true CN202486043U (en) | 2012-10-10 |
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| CN2012200964376U Expired - Fee Related CN202486043U (en) | 2012-03-15 | 2012-03-15 | System for detecting microcrack of silicon chip |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103383358A (en) * | 2013-07-12 | 2013-11-06 | 哈尔滨工业大学 | Dot-matrix type heat conduction temperature measurement nondestructive crack detection method |
| CN103383367A (en) * | 2013-07-12 | 2013-11-06 | 哈尔滨工业大学 | Method for scanning type thermal conduction line temperature detection of workpiece shallow cracks |
| CN103868926A (en) * | 2012-12-12 | 2014-06-18 | 由田新技股份有限公司 | Detection device |
| CN106298567A (en) * | 2016-07-21 | 2017-01-04 | 无锡宏纳科技有限公司 | The device of wafer rent is detected in chip manufacturing proces |
| CN106331540A (en) * | 2016-09-13 | 2017-01-11 | 首都师范大学 | Multi-mode CMOS image sensor and control method thereof |
| CN106770320A (en) * | 2016-12-08 | 2017-05-31 | 阳光硅峰电子科技有限公司 | A kind of detection hidden equipment split of silicon chip and its silicon chip is hidden splits detection method |
| CN107369740A (en) * | 2017-07-17 | 2017-11-21 | 苏州天准科技股份有限公司 | It is a kind of to be used to detect the hidden optical detection apparatus split of solar silicon wafers and detection method |
| CN108831844A (en) * | 2018-06-26 | 2018-11-16 | 长江存储科技有限责任公司 | Detect the method and system of wafer defect |
| CN109211976A (en) * | 2018-08-07 | 2019-01-15 | 哈尔滨商业大学 | Semi-conductor silicon chip surface/sub-surface micro-cracks damage chirp beam splitting laser excitation infrared thermal wave detection device and method |
| CN114002226A (en) * | 2021-10-29 | 2022-02-01 | 西安奕斯伟材料科技有限公司 | Silicon wafer detection method |
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2012
- 2012-03-15 CN CN2012200964376U patent/CN202486043U/en not_active Expired - Fee Related
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103868926A (en) * | 2012-12-12 | 2014-06-18 | 由田新技股份有限公司 | Detection device |
| CN103383358A (en) * | 2013-07-12 | 2013-11-06 | 哈尔滨工业大学 | Dot-matrix type heat conduction temperature measurement nondestructive crack detection method |
| CN103383367A (en) * | 2013-07-12 | 2013-11-06 | 哈尔滨工业大学 | Method for scanning type thermal conduction line temperature detection of workpiece shallow cracks |
| CN106298567A (en) * | 2016-07-21 | 2017-01-04 | 无锡宏纳科技有限公司 | The device of wafer rent is detected in chip manufacturing proces |
| CN106331540A (en) * | 2016-09-13 | 2017-01-11 | 首都师范大学 | Multi-mode CMOS image sensor and control method thereof |
| US11057562B2 (en) | 2016-09-13 | 2021-07-06 | Capital Normal University | Multi-mode CMOS image sensor and control method thereof |
| CN106331540B (en) * | 2016-09-13 | 2019-09-13 | 首都师范大学 | A kind of multi-mode cmos image sensor and its control method |
| CN106770320B (en) * | 2016-12-08 | 2019-06-11 | 阳光硅峰电子科技有限公司 | A kind of equipment and its silicon wafer crack detection method detecting silicon wafer crack |
| CN106770320A (en) * | 2016-12-08 | 2017-05-31 | 阳光硅峰电子科技有限公司 | A kind of detection hidden equipment split of silicon chip and its silicon chip is hidden splits detection method |
| CN107369740A (en) * | 2017-07-17 | 2017-11-21 | 苏州天准科技股份有限公司 | It is a kind of to be used to detect the hidden optical detection apparatus split of solar silicon wafers and detection method |
| CN108831844A (en) * | 2018-06-26 | 2018-11-16 | 长江存储科技有限责任公司 | Detect the method and system of wafer defect |
| CN108831844B (en) * | 2018-06-26 | 2019-12-06 | 长江存储科技有限责任公司 | Method and system for detecting wafer defects |
| CN109211976A (en) * | 2018-08-07 | 2019-01-15 | 哈尔滨商业大学 | Semi-conductor silicon chip surface/sub-surface micro-cracks damage chirp beam splitting laser excitation infrared thermal wave detection device and method |
| CN114002226A (en) * | 2021-10-29 | 2022-02-01 | 西安奕斯伟材料科技有限公司 | Silicon wafer detection method |
| CN114002226B (en) * | 2021-10-29 | 2024-01-26 | 西安奕斯伟材料科技股份有限公司 | Silicon wafer detection method |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121010 Termination date: 20130315 |