CN202423308U - Solar energy casting crystalline silica sheet, casting crystalline silica cell sheet and power generation device - Google Patents
Solar energy casting crystalline silica sheet, casting crystalline silica cell sheet and power generation device Download PDFInfo
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- CN202423308U CN202423308U CN2011203806242U CN201120380624U CN202423308U CN 202423308 U CN202423308 U CN 202423308U CN 2011203806242 U CN2011203806242 U CN 2011203806242U CN 201120380624 U CN201120380624 U CN 201120380624U CN 202423308 U CN202423308 U CN 202423308U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
The utility model relates to a solar energy casting crystalline silica sheet, a casting crystalline silica cell sheet and a power generation device. According to the utility model, the ratio of the long edge to the short edge of the rectangle outline of the silicon sheet or the cell sheet is at the range form 1.1 to 4, the geometries of casting and non-casting crystalline silica sheets, the casting crystalline silica solar cell sheet and the solar generation device prepared thereof are improved, compared to the prior silica sheet, cell sheet and solar generation device, a lower manufacture cost and a high output capability are provided.
Description
Technical field
The utility model relates generally to the solar battery sheet and crystal silicon chip and the device of solar generating that are the main body with crystalline silicon or casting crystalline silicon or silicon alloy.Casting crystal silicon chip or the crystal silicon chip that some are not cast are commonly used to make crystal silicon solar cell sheet, and crystal silicon solar cell sheet is used for making device of solar generating, for example solar cell, or title photovoltaic cell.The present invention proposes improved casting and not cast crystal silicon chip, casting crystal silicon solar cell sheet and crystal silicon solar TRT.
Background technology
Crystalline silicon (or silicon alloy) material can be divided into the molten crystal in casting crystal, pulling of crystals (rod) and district according to the difference of its manufacturing approach.The cast silicon crystal is distinguished from method, can be divided into crucible cast silicon crystal and no crucible casting (for example electromagnetic suspension casting) silicon crystal; Distinguish from crystal structure, can be divided into casting polycrystalline silicon and casting monocrystalline silicon.The molten crystal in pulling of crystals (rod) and district, because the requirement of crystal growth pattern and thermal field control, its main part is approximate circle cylinder shape usually.
Photovoltaic power generation apparatus is because generated output is that area is dependent; Usually need a plurality of battery sheets in unit are, to compose and lay out into maximum effective area; Thereby; Be adapted to silicon ingot cutting and battery sheet solid matter, existing photovoltaic adopts equilateral tetragonal contour shape usually with battery sheet and silicon chip, has four angular positions.
The cast silicon crystal is processed silicon chip; Existing method is the silico briquette that the crystal ingot of monoblock or rod is split into a plurality of less four-prism shapes, is commonly called as silicon side's ingot, again through rib portion chamfered; Any silicon side's ingot surface along prism or long axis direction with silicon side's ingot is bonded and fixed on the frock then; Load on slicing machine, obtain silicon chip along the direction section perpendicular to major axis, for example the open CN201010238223.3 of one Chinese patent application is said.
Pulling of crystals or zone melting single-crystal rod are processed silicon chip; Existing method is that approximate tubular crystal bar barreling is become pole, and then edge and axis direction excision pole Outboard Sections crystal, crystal bar is cut into the equilateral prism of four jiaos of band circular arc cambers; Claim the silicon square rod; Any plane surface along prism or long axis direction with the silicon square rod is bonded and fixed on the frock then, loads on slicing machine, obtains silicon chip along the direction section perpendicular to major axis.Processing the square rod of band circular arc camber rather than process the square ingot of four-prism shape, is in order to take into account the compose and lay out utilance of area and crystal of bigger silicon chip, because the processing cost of pulling of crystals or zone melting single-crystal is higher.
The crystal silicon chip that above-mentioned existing method is made, outward appearance be square oblique angle or square fillet have four isometric basically edge wheel profiles (side line) and near four bights of outline line end.
By existing technology silicon side's ingot or silicon square rod are cut into silicon chip, processing cost is higher, is that silicon raw material and semi-finished product stock are high because operation is more, and the process-cycle is long on the one hand, is that the equipment output capacity is low because process equipment is expensive, and mobility is low on the other hand.Along with silicon chip cutting The application of new technique, such as diamond fretsaw technology, high-speed cutting technology, cutting speed improves fast, and single ingot of 156 silicon chips shortened to 4～6 hours by original about 9 hours clipping time, caused mobility further to reduce.
Summary of the invention
Therefore; One of the object of the invention provides novel improved solar energy crystal silicon chip; With improved crystal silicon solar cell sheet; And the novel solar power generation device that has comprised this improved casting crystal silicon solar cell sheet, to realize the processing or the manufacturing cost of lower silicon chip, battery sheet and device of solar generating.Simultaneously, the invention allows for the method for making above-mentioned improved crystal silicon chip.Novel crystal silicon chip of the present invention comprises monocrystalline silicon piece and polysilicon chip; Novel crystal silicon solar cell of the present invention comprises monocrystaline silicon solar cell sheet and polysilicon solar battery slice.
The inventor is through anatomizing discovery; Long reason of process-cycle comprises that the silicon ingot viscose glue is fixed in the long time of frock needs; The silicon ingot of band frock is loaded into slicing machine and accomplishes wiring and wait cutting to prepare and the unloading of cutting back, cleaning; Also consume the plenty of time, the latter has more reduced the mobility and the production capacity of expensive slicing machine, has improved the equipment depreciation cost.
The inventor finds through further investigation and careful calculating; Hilted broadsword silicon side ingot viscose glue that existing quantity by output silicon chip sheet number is calculated or loading, discharge time; The area that changes into by the output silicon chip calculates; All of a sudden reach a conclusion: through reducing the ratio of mucilage glue surface area and the total surface area of the silicon chip of acquisition, the viscose glue time and loading, discharge time that can reduce the production unit silicon area, the mobility of the chopper and slicer of raising costliness.The inventor finds; With the square silicon chip in fillet, arc angle or oblique angle of the length of side such as existing, change into and have inequilateral long fillet, arc angle or oblique angle rectangle silicon chip, just can reduce the ratio of total surface area of the silicon chip of mucilage glue surface area and acquisition; Thereby reduce cost, improve work efficiency.
The inventor also finds; Be packaged in the production line manufacture process of device of solar generating at silicon chip manufacturing, the manufacturing of battery sheet and battery sheet; Exist the asymmetric operation of in a large number silicon chip and battery sheet being carried out in space, and, can improve the operating efficiency of these asymmetric operations with silicon chip or the calculating of battery sheet area through silicon chip, battery sheet being processed asymmetric rectangle; Thereby increase the production line output capacity, reduce cost.
According to above-mentioned analysis and calculating; And consider the reliability and the convenience of operation; The present invention designs the new type solar energy crystal silicon chip, and it is the rectangle silicon chip at fillet or oblique angle or arc surface angle, and having main body is rectangular profile; It is characterized in that the long limit of the described rectangle profile of formation silicon chip and the ratio of length of short sides are between 1.1～4.
And then the crystal silicon solar cell sheet of the present invention that obtains; Rectangle crystal silicon cell sheet for fillet or oblique angle or arc surface angle; Having main body is rectangular profile, it is characterized in that, the long limit of the described rectangle profile of formation battery sheet and the ratio of length of short sides are between 1.1～4.
Device of solar generating of the present invention according to same design and scheme acquisition; Comprise at least one crystal silicon solar cell sheet, the base plate that encapsulates this solar battery sheet and printing opacity with rectangle profile panel, collect the lead-out terminal of the electric current that the battery sheet produces; It is characterized in that the ratio of long limit and length of short sides that constitutes described battery length of a film square contour is between 1.1～4.
The long limit of the said rectangle profile of the crystal silicon solar cell sheet of above-mentioned crystal silicon chip of the present invention, crystal silicon cell sheet and device of solar generating and the ratio of length of short sides, preferred 1.3～2.5, further preferred 1.45～2.05.
The present invention also provides a kind of above-mentioned method with crystal silicon chip of rectangular body profile of making; Comprise; Cutting silicon ingot or silicon rod; To obtain the cross section is that the main body in rectangle or cross section is the four prism type crystalline silicon side ingot of rectangular four prism type crystalline silicon side's ingot or band arc surface, and optional silicon side's ingot to four prism type is made chamfering, rounding or gone rectangular edge to handle along the rib of major axis, and the part surface at least with a narrower side of the ingot edge, crystalline silicon side of four prism type and axis direction is fixed on silicon side's ingot on the frock as contact-making surface then; Be loaded into slicing machine, silicon side's ingot cut into silicon chip along direction perpendicular to major axis.
The present invention also provides the improvement project of the method for the crystal silicon chip that above-mentioned manufacturing has the rectangular body profile; Comprise, the part surface at least as the side of the oblique offside in narrower side of the contact-making surface that is fixed in frock of described silicon side ingot also is adjacent to or is fixed on the frock as contact-making surface.
Above-mentioned rectangular monocrystalline or the crystal silicon chip of polycrystalline or the scheme of battery sheet or device of solar generating that the present invention proposes; Compare the square silicon chip of same area, allow the cutting distance of shorter line of cut direct of travel, can reduce the bad occurrence rate of TTV of silicon chip; And the thickness deviation of reduction silicon chip; Allow thinner silicon chip cutting technique, improve the silicon chip output capacity of crystal ingot, thus; The present invention can reduce the manufacturing cost of silicon chip significantly, and thereby reduces the manufacturing cost of battery sheet and device of solar generating.
Further specify the present invention below in conjunction with accompanying drawing and embodiment.
Description of drawings
Accompanying drawing is illustrated novel crystal silicon chip 1 of the present invention, and its profile is a rectangle, and the length of side is a, b, and the bight border line is denoted as c.
Accompanying drawing of the present invention is a sketch map, and the relative size that each position showed among the figure according to clearly showing and making things convenient for the needs of drawing to adjust, is not represented actual ratio or size.The thickness that does not show silicon chip in the accompanying drawing.The thickness of silicon chip of the present invention, battery sheet can need and be chosen suitable thickness arbitrarily according to use, usually, is to save material, and the one-tenth-value thickness 1/10 of silicon chip of the present invention, battery sheet is at 100～300 μ m.According to the present invention, choose thin thickness, embody product of the present invention more easily and improve rate of finished products and the advantage that reduces cost.
Embodiment
Accompanying drawing is illustrated the execution mode of a kind of crystal silicon chip of the present invention.Described silicon chip have a rectangular body profile, the length of side is respectively a, b.The bight border line of the on-right angle of c signal silicon chip.Visible among the figure, the bight of described on-right angle can be considered and removed the sub-fraction right angle from position, rectangular right angle and form, and wherein, c is much smaller than a or b.According to the present invention, the a/b value is between 1.1～4, and is preferred 1.3～2.5, and further preferred 1.5～2.Be applicable to the manufacturing solar battery sheet, among the present invention, the size of b is generally at 50～250mm, preferred 100～200mm, further preferred 120～160mm, for example 125mm, 156mm or the like.
In a specific embodiment according to the above-mentioned execution mode of crystal silicon chip of the present invention, main body is that the length of side a of rectangular polysilicon chip is 137.5mm, and side length b is 125mm, and the length of c is 3mm.
In another specific embodiment according to the above-mentioned execution mode of crystal silicon chip of the present invention, main body is that the length of side a of rectangular polysilicon chip is 150mm, and side length b is 125mm, and the length of c is 2mm.
In another specific embodiment according to the above-mentioned execution mode of crystal silicon chip of the present invention, main body is that the length of side a of rectangular polysilicon chip is 187.5mm, and side length b is 125mm, and the length of c is 2.5mm.
In the specific embodiment according to the above-mentioned execution mode of crystal silicon chip of the present invention, main body is that the length of side a of rectangular polysilicon chip is 220mm, and side length b is 110mm, and the length of c is 2.5mm.The thickness of silicon chip is 160 μ m.Because the length of line of cut direct of travel cutting when the side length b of weak point is as cutting; The thickness difference or the TTV at silicon chip proximal edge place (usually being as the criterion with the relative two 6mm places, lateral extent edge of growing the place, limit) can be controlled at below 15 microns; Reach about 10 μ m, reduced the thickness deviation of silicon chip, therefore; Can cut silicon chip thinner, thereby improve the output capacity of silicon chip.By contrast, prior art have a square silicon chip of the same area, its length of side is 156mm, generally between 15～30 μ m, mean value is about 20 μ m for TTV, the thickness of silicon chip is the thinnest can only accomplish 180 μ m.
In a specific embodiment according to the above-mentioned execution mode of crystal silicon chip of the present invention, main body is that the length of side a of rectangular polysilicon chip is 226mm, and side length b is 156mm, and the length of c is 1.8mm.The thickness of silicon chip is 180+/-20 μ m.
In a specific embodiment according to the above-mentioned execution mode of crystal silicon chip of the present invention, main body is that the length of side a of rectangular polysilicon chip is 250mm, and side length b is 125mm, and the length of c is 3.5mm.The thickness of silicon chip is 180+/-15 μ m.
In a specific embodiment according to the above-mentioned execution mode of crystal silicon chip of the present invention, main body is that the length of side a of rectangular casting single crystal silicon chip is 500mm, and side length b is 125mm, and the length of c is 3.5mm.The thickness of silicon chip is 200+/-15 μ m.
In a specific embodiment according to the above-mentioned execution mode of crystal silicon chip of the present invention, main body is that the length of side a of rectangular casting single crystal silicon chip is 281mm, and side length b is 156mm, and the length of c is 3.5mm.The thickness of silicon chip is 200+/-20 μ m.
In a specific embodiment according to the above-mentioned execution mode of crystal silicon chip of the present invention, main body is that the length of side a of rectangular casting single crystal silicon chip is 320mm, and side length b is 156mm, and the length of c is 2.8mm.The thickness of silicon chip is 190+/-20 μ m.
In a specific embodiment according to the above-mentioned execution mode of crystal silicon chip of the present invention, main body is that the length of side a of rectangular casting single crystal silicon chip is 390mm, and side length b is 156mm, and the length of c is 3.5mm.The thickness of silicon chip is 200+/-20 μ m.
Silicon chip of the present invention can adopt following manufacturing approach to obtain: will be by the casting crystal silicon ingot evolution of solar energy crystal casting ingot method growth; Obtaining the cross section length of side is respectively 250mm, 125mm, highly is the four prism type silicon side ingot of 2600mm; Choose wantonly four seamed edges are done little chamfer machining; With the length of side of the silicon side's ingot that obtains be the plane silicon face of 2600mm, 125mm as stationary plane, be bonded in silicon side's ingot on the frock; At least one frock of having fixed silicon side's ingot is loaded into the cutting work station of slicing machine; By the mode of edge perpendicular to the direction cutting silicon side ingot of major axis; Start slicing machine cutting silicon side ingot; Unload and take off the silicon chip of acquisition after cutting is accomplished, obtain a plurality of rectangle crystal silicon chips, its length of side is 250mm, 125mm.
Silicon chip of the present invention also can adopt following manufacturing approach to obtain: with crystal silicon ingot evolution; Obtaining the cross section length of side is respectively 260mm, 130mm, highly is the four prism type silicon side ingot of 2600mm; Choose wantonly four seamed edges are done little chamfer machining; With the length of side of the silicon side's ingot that obtains be the plane silicon face of 2600mm, 130mm as stationary plane, be bonded in silicon side's ingot on the frock; Simultaneously, be at least a portion of the plane silicon face of 260mm, 2600mm with the length of side of the oblique offside of this bonding stationary plane, optional bonding is fixing or fit tightly on frock; Frock is loaded into the cutting work station of slicing machine together with silicon side's ingot; By along the mode of cutting silicon side's ingot perpendicular to the direction of major axis, start slicing machine cutting silicon side ingot, after accomplishing, cutting unloads and takes off the silicon chip of acquisition; Obtain a plurality of rectangle crystal silicon chips, its length of side is 260mm, 130mm.
Above-mentioned 2 faces and frock bonding with silicon side's ingot of the present invention is fixing; The situation that length limit ratio is big, silicon ingot weight is bigger that is suitable for the not high or target silicon chip of adhesive strength; Or the situation of silicon side's ingot inclined cut; Can increase the fixation degree of silicon side's ingot, guarantee that silicon side's ingot can not drop from frock in the cutting.
The above-mentioned method that the 2nd face and the frock of silicon side's ingot are adjacent to of the present invention, pressure capable of using makes the frock face be pressed on the silicon plane surface, and the surface that this is compacted goes out edge of a knife face as the line of cut cutting end point, and the collapse limit, silicon that can reduce the surface fall etc. bad.
Get the crystal silicon chip of above-mentioned each embodiment, its crystal silicon battery piece making method and processing procedure by routine is processed the battery sheet, promptly obtain crystal silicon solar cell sheet of the present invention, it has and is rendered as rectangular body profile, and the ratio of its rectangular long and short length of side is between 1.1～4, for example; 1.2,1.3,1.4,1.5,1.6; 1.7,1.8,1.9,2.0,2.01; 2.1,2.2,2.45,2.5, or the like.At least one this battery sheet is packaged into photovoltaic cell component, promptly obtains a kind of device of solar generating of the present invention.
Get the p type doped crystal silicon chip that the length of side is respectively 250mm, 125mm; Handle through conventional batteries sheet manufacture crafts such as surface wool manufacturing, phosphorous diffusion system pn knot, corrosion dephosphorization silex glass, edge etching, coated with antireflection film, electrode printing, sintering, process a kind of novel crystal silicon solar cell of the present invention.It has and is rendered as rectangular body profile, and the ratio of its rectangular long and short length of side is 2.
With above-mentioned at least one battery sheet, with the encapsulation of the panel of base plate and printing opacity, and the lead-out terminal that can collect the electric current that the battery sheet produces is set, promptly obtain a kind of device of solar generating of the present invention.It is coupled together as photovoltaic cell component and support, controller, output cable, promptly constitute a solar power system of the present invention.
Get 9 of the battery sheets that the length of side is respectively 250mm, 125mm; 3 one spellings are lined up 3 row and are placed on the package floor; Be provided with and connect lead-out terminal each battery sheet conduction wiregrating, that can collect the electric current of battery sheet generation; Do the lamination encapsulation with the panel of EVA and printing opacity, and promptly obtain a kind of device of solar generating of the present invention.It is coupled together as photovoltaic cell component and support, controller, output cable, promptly constitute a solar power system of the present invention.
Obtaining the length of side by method cutting of the present invention silicon side ingot is 234mm, 156mm, the rectangle silicon chip of the present invention of thickness 200 μ m, and its monolithic measured area is 36490mm
2, consuming identical silicon side's ingot bonding set time and cutting loading, discharge time, the more existing length of side is the square silicon chip of 156mm, fecund goes out silicon area 50%.Simultaneously, silicon chip sorting, the battery sheet manufacturing speed calculated by the unit silicon area also are improved significantly.
220*110*0.16mm ultra thin silicon wafers according to silicon chip scheme manufacturing of the present invention; The common silicon chip of 156*156*0.18mm of same area; Per kilogram silicon side ingot can go out 3.3 by fecund; Output improves 6.3%, has significantly reduced the silicon chip cost, and thereby has reduced the cost of crystal silicon battery sheet of the present invention and device of solar generating.
The present invention finds, the ratio of the length length of side of rectangular silicon chip, if be lower than 1.1, and its DeGrain that reduces cost then; If be higher than 4, can cause making and be inconvenient in the course of processing operate and be easy to suffer mechanical damage; And the process operation of ratio 1.5+/-0.05 and 2.0+/-0.05 the most suitable silicon chip, battery sheet and best appearance is arranged; Ratio 1.45～2.55 is in preferable range.
Crystal silicon chip of the present invention and battery sheet; Comprise the crystal silicon chip and the battery sheet that contain various dopants; For example contain silicon chip and battery sheet, contain performance improver for example crystal silicon chip, the battery sheet of germanium based on the needed P type dopant boron in battery piece performance basis, gallium or N type doping agent phosphorus, antimony.Wherein, dopant content generally is no more than 49%, for example, and germanic about 30% crystal silicon chip and the battery sheet processed of silicon chip thus.
The silicon chip that the present invention uses has semiconductor property, and utilizes its semiconductor property to process the doped crystal silicon chip, is used for the manufacturing solar cells sheet.Also applicable the present invention such as germanium, GaAs, silicon carbide alloys with same semiconductor property.
Those skilled in the art is obvious, under the situation that does not depart from scope of the present invention or design, can make various modifications and distortion to the structure and the method that are disclosed.
Claims (10)
1. a solar energy is cast crystal silicon chip, and having main body is rectangular profile, and characteristic of the present invention is that the long limit of the described rectangle profile of formation silicon chip and the ratio of length of short sides are between 1.1～4.
2. casting crystal silicon chip according to claim 1 is characterized in that, the long limit of described rectangle profile and the ratio of length of short sides are between 1.2～2.5.
3. according to the casting crystal silicon chip of claim 2, it is characterized in that the long limit of described rectangle profile and the ratio of length of short sides are between 1.45～2.05.
4. according to each described casting crystal silicon chip in the claim 1～3, it is characterized in that the difference of proximal edge place, the relative both sides thickness at the place, long limit of silicon chip is less than 15um.
5. solar energy casting crystal silicon cell sheet, having main body is rectangular profile, and characteristic of the present invention is, and the ratio of long limit and length of short sides that constitutes described battery length of a film square contour is between 1.1～4.
6. solar energy casting crystal silicon cell sheet according to claim 5 is characterized in that the long limit of the rectangle profile of described battery sheet and the ratio of length of short sides are between 1.2～2.5.
7. solar energy casting crystal silicon cell sheet according to claim 6 is characterized in that the long limit of the rectangle profile of described battery sheet and the ratio of length of short sides are between 1.45～2.05.
8. according to each described battery sheet in the claim 5～7, it is characterized in that proximal edge place, the relative both sides thickness difference at the place, long limit of the silicon chip of formation battery sheet is less than 15um.
9. device of solar generating; The lead-out terminal that comprises the electric current of at least one panel, the generation of collection battery sheet with the casting crystal silicon cell sheet of rectangle profile, the base plate that encapsulates this battery sheet and printing opacity; It is characterized in that the ratio of long limit and length of short sides that constitutes described battery length of a film square contour is between 1.1～4.
10. a kind of device of solar generating according to claim 9 is characterized in that, the long limit of the rectangle profile of described casting crystal silicon cell sheet and the ratio of length of short sides are between 1.2～2.5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203806242U CN202423308U (en) | 2011-09-26 | 2011-09-26 | Solar energy casting crystalline silica sheet, casting crystalline silica cell sheet and power generation device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203806242U CN202423308U (en) | 2011-09-26 | 2011-09-26 | Solar energy casting crystalline silica sheet, casting crystalline silica cell sheet and power generation device |
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| CN202423308U true CN202423308U (en) | 2012-09-05 |
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| CN2011203806242U Expired - Fee Related CN202423308U (en) | 2011-09-26 | 2011-09-26 | Solar energy casting crystalline silica sheet, casting crystalline silica cell sheet and power generation device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105449020A (en) * | 2014-08-29 | 2016-03-30 | 英属开曼群岛商精曜有限公司 | Solar module and solar cells |
-
2011
- 2011-09-26 CN CN2011203806242U patent/CN202423308U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105449020A (en) * | 2014-08-29 | 2016-03-30 | 英属开曼群岛商精曜有限公司 | Solar module and solar cells |
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