CN202351418U - Mini magnetic field measurement device based on magnetoresistive effect and magnetic field superposition - Google Patents
Mini magnetic field measurement device based on magnetoresistive effect and magnetic field superposition Download PDFInfo
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- CN202351418U CN202351418U CN2011202678711U CN201120267871U CN202351418U CN 202351418 U CN202351418 U CN 202351418U CN 2011202678711 U CN2011202678711 U CN 2011202678711U CN 201120267871 U CN201120267871 U CN 201120267871U CN 202351418 U CN202351418 U CN 202351418U
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Abstract
The utility model provides a mini magnetic field measurement device based on magnetoresistive effect and magnetic field superposition. The device adopts magnetoresistive members to form a measuring probe. Specifically, two indium antimonide thin-film magnetic-sensitive resistors (InSb) that are additionally provided with permanent magnets respectively are reversely connected and then packaged through metal epoxy, and meanwhile, the two indium antimonide thin-film magnetic-sensitive resistors are connected to adjacent bridge arms of a Wheatstone bridge through wires. The technical scheme can offset a mini magnetic field to be detected to the region of linear relationship with relative changes of magnetic resistance by magnetic field superposition, so as to simplify the result processing operation and improve the measurement accuracy; and can also eliminate the impact of temperature on the resistance values of the magnetic-sensitive resistors while multiplying the output voltage signals, resulting in the improvement of sensitivity.
Description
Technical field
The utility model relates to the device that a kind of method through magnetoresistance and magnetic field superposition is measured small magnetic field.
Technical background
In the method in present numerous measurements magnetic field, mostly magnetic signal is transformed into electric signal and handles, wherein main flow is to utilize hall device to change.Though utilize method that hall device measures magnetic field comparative maturity, it has certain limitation, is not suitable for all occasions, hall device also can not ignore and existed magnetoresistance, and is also bigger with temperature variation, and affected by environment big, antijamming capability is not strong.Though and utilize magnetoresistance sensitivity higher, antijamming capability is strong because when measuring small magnetic field, the resistance change of magnetoresistance device becomes nonlinear relationship with magnetic induction density, directly the words of measurement will cause the measurement result dealing with complicated, error is bigger.
Summary of the invention
Measure the limitation that bring in magnetic field in order to overcome hall device, simultaneously also in order to overcome the bigger deficiency of the small magnetic field error of direct measurement.We adopt the scheme of magnetoresistance, and the method through magnetic field superposition, magnetic field is biased to linear zone measures, and make result treatment simple, and measuring accuracy is higher.
The utility model solves the technical scheme that its technical matters adopted: utilize magnetoresistance device to constitute the probe of measuring; Specifically be that two indium stibide film mistors (InSb) that added permanent magnet respectively oppositely are connected together; Constitute through the metal epoxy packages then, simultaneously these two indium stibide film mistors are linked into the adjacent brachium pontis of Wheatstone bridge through lead.The characteristic that the utility model utilizes the resistance value of indium stibide film mistor to change along with the externally-applied magnetic field variation is transformed into magnetoresistance device changes in resistance amount with Magnetic Field; Then through the indium stibide film mistor being inserted the brachium pontis that becomes Wheatstone bridge; Again the variable quantity of resistance value is transformed into the variable quantity of voltage, thereby just can realizes measurement indirectly magnetic field through the measurement of voltage.And general magnetoresistance device be in than low-intensity magnetic field (among the B≤0.06T), its resistance relative variation be proportional to externally-applied magnetic field square; (among the B>=0.12T), resistance relative variation and externally-applied magnetic field are linear and at high-intensity magnetic field.Give the steady magnetic field of the additional about 0.13T of magnetoresistance device indium stibide film mistor through a permanent magnet; When adding a small magnetic field to be measured again; After two magnetic field superposition greater than 0.12T; The relative variation of magnetic resistance will be linear with the total magnetic field, through magnetic field superposition small magnetic field to be measured is biased to the processing of both having simplified the result with the linear zone of magnetic resistance relative variation like this, also improve the precision of measuring.
When becoming voltage signal to the resistance variations signal transition, also be thermistor when being mistor, and temperature coefficient is very big, so Influence of Temperature is not allowed to ignore owing to indium antimonide resistance.The indium antimonide resistance (Fig. 1) of same material is used in design on the adjacent brachium pontis of Wheatstone bridge; Also be about in the probe two the same indium stibide film mistors are linked into Wheatstone bridge through lead adjacent brachium pontis; And get up with the metal epoxy packages; Separate with the external world, make their temperature approaching as far as possible, Wheatstone bridge will change with ambient temperature with two indium antimonide resistance on one side simultaneously like this; Therefore do not influence the voltage output result of Wheatstone bridge, thereby can eliminate Influence of Temperature.The probe that the mistor in additional eternal magnetic field of will being packaged together simultaneously constitutes places treats measuring magnetic field, when the steady magnetic field direction of the small magnetic field that adds and permanent magnet is identical, and the increase of indium antimonide resistance; When the steady magnetic field of small magnetic field that adds and permanent magnet is in the opposite direction; The indium antimonide resistance reduces; Because this device oppositely is connected together these two the indium stibide film mistors that added permanent magnet respectively (Fig. 2), their resistances increase in magnetic field like this, and a resistance reduces; Voltage through Wheatstone bridge output will increase doubly, improve the sensitivity of measuring.
The beneficial effect of the utility model is, highly sensitive, antijamming capability is strong, convenient measurement, and the experiment proof scheme is feasible, and has certain innovation property.
Description of drawings
Fig. 1 is the Wheatstone bridge that the utility model uses.
Fig. 2 is the inner structure of probe.1. indium stibide film mistors (InSb) among the figure, 2. the permanent magnet arctic, 3. the permanent magnet South Pole, 4. the permanent magnet South Pole, 5. the permanent magnet arctic, 6. indium stibide film mistor (InSb)
Embodiment
In Fig. 1, R1, R2 are the indium stibide film mistors, and its resistance all is R; R3 is a variable resistor, and R4 is a fixed value resistance.When measuring beginning; The probe that will add the indium antimonide resistance formation of permanent magnet earlier places outside the magnetic field; Make electric bridge be in equilibrium state through regulating variable resistor R3, the resistance of R3 and R4 is all R0 when establishing balance, places magnetic field to measure magnetic field the indium antimonide Resistance probe then.
When complementary field with treat that measuring magnetic field is in same straight line, be the state of can measuring, the electric potential difference between this moment A, B does
Wherein U is the voltage of power supply output, and K is the scale factor of indium antimonide resistance with the externally-applied magnetic field variation, is about K=3, and B0 is about 0.13T for additional steady magnetic field, and B is a magnetic field intensity to be measured.Linear by visible Wheatstone bridge output voltage Δ U of formula and magnetic field B to be measured.
In another embodiment shown in Figure 2; Two indium stibide film mistors (1) on the Wheatstone bridge brachium pontis among Fig. 1 and (6) are attached to a diameter 5mm respectively; On the N utmost point (2) and (5) of the cylindrical magnet iron of high 2mm; Oppositely be connected together then, and get up, become the probe segment of the utility model device with the metal epoxy packages.This cylindrical magnet iron can produce the steady magnetic field B0 of an about 0.13T.Like this, when add one small when treating measuring magnetic field, still greater than 0.12T, the relative variation of resistance is with the total magnetic field linear change after two magnetic field superposition.
Claims (3)
1. the small magnetic field measuring device based on magnetoresistance and magnetic field superposition utilizes magnetoresistance device to constitute the probe of measuring, and it is characterized in that: probe is made up of through the metal epoxy packages two indium stibide film mistors that added permanent magnet respectively.
2. the small magnetic field measuring device based on magnetoresistance and magnetic field superposition according to claim 1 is characterized in that: two indium antimonide mistors that added permanent magnet respectively oppositely are connected together in the probe.
3. according to claim 1 or the described small magnetic field measuring device based on magnetoresistance and magnetic field superposition of claim 2, two indium stibide film mistors are linked into the adjacent brachium pontis of Wheatstone bridge in it is characterized in that popping one's head in through lead.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202678711U CN202351418U (en) | 2011-07-21 | 2011-07-21 | Mini magnetic field measurement device based on magnetoresistive effect and magnetic field superposition |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011202678711U CN202351418U (en) | 2011-07-21 | 2011-07-21 | Mini magnetic field measurement device based on magnetoresistive effect and magnetic field superposition |
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| CN202351418U true CN202351418U (en) | 2012-07-25 |
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| CN2011202678711U Expired - Fee Related CN202351418U (en) | 2011-07-21 | 2011-07-21 | Mini magnetic field measurement device based on magnetoresistive effect and magnetic field superposition |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103542919A (en) * | 2013-09-29 | 2014-01-29 | 重庆交通大学 | Magnetostrictive material and magnetic resistor combined vehicular load sensor and load detection method thereof |
| CN104422904A (en) * | 2013-08-30 | 2015-03-18 | 北京嘉岳同乐极电子有限公司 | Magnetic chip and sensor |
| CN107167749A (en) * | 2016-11-18 | 2017-09-15 | 清华大学 | Big Measurement Method for Magnetic Field and system in one kind |
| WO2018090636A1 (en) * | 2016-11-18 | 2018-05-24 | 清华大学 | Wide magnetic field range measuring method and device |
| CN110687675A (en) * | 2019-09-09 | 2020-01-14 | 歌尔股份有限公司 | Galvanometer system, micro-projection device and electronic device |
| CN114689224A (en) * | 2020-12-31 | 2022-07-01 | 中国科学院微电子研究所 | Differential pressure type MEMS piezoresistive sensor and self-testing method thereof |
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2011
- 2011-07-21 CN CN2011202678711U patent/CN202351418U/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104422904A (en) * | 2013-08-30 | 2015-03-18 | 北京嘉岳同乐极电子有限公司 | Magnetic chip and sensor |
| CN104422904B (en) * | 2013-08-30 | 2019-02-15 | 北京嘉岳同乐极电子有限公司 | Magnetic chip and sensor |
| CN103542919A (en) * | 2013-09-29 | 2014-01-29 | 重庆交通大学 | Magnetostrictive material and magnetic resistor combined vehicular load sensor and load detection method thereof |
| CN103542919B (en) * | 2013-09-29 | 2016-05-18 | 重庆交通大学 | The compound vehicle-mounted load transducer of magnetostriction materials-mistor and detection method thereof |
| CN107167749A (en) * | 2016-11-18 | 2017-09-15 | 清华大学 | Big Measurement Method for Magnetic Field and system in one kind |
| WO2018090636A1 (en) * | 2016-11-18 | 2018-05-24 | 清华大学 | Wide magnetic field range measuring method and device |
| WO2018090635A1 (en) * | 2016-11-18 | 2018-05-24 | 清华大学 | Medium and large magnetic field measurement method and system |
| CN107167749B (en) * | 2016-11-18 | 2019-05-14 | 清华大学 | Big Measurement Method for Magnetic Field and system in one kind |
| US10989770B2 (en) | 2016-11-18 | 2021-04-27 | Tsinghua University | Wide magnetic field range measuring method and device |
| CN110687675A (en) * | 2019-09-09 | 2020-01-14 | 歌尔股份有限公司 | Galvanometer system, micro-projection device and electronic device |
| CN114689224A (en) * | 2020-12-31 | 2022-07-01 | 中国科学院微电子研究所 | Differential pressure type MEMS piezoresistive sensor and self-testing method thereof |
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Legal Events
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP02 | Change in the address of a patent holder |
Address after: 515638 No. 5 umbrella street, hut Town, Guangdong, Chaozhou Patentee after: Weng Jinshen Address before: Chaozhou City, Guangdong province 521011 yuan Kui Guangdong A District 7 Building 301 Patentee before: Weng Jinshen |
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| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120725 Termination date: 20130721 |