CN107014401A - A kind of magnetoresistive transducer temperature compensation means - Google Patents

A kind of magnetoresistive transducer temperature compensation means Download PDF

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Publication number
CN107014401A
CN107014401A CN201611019659.7A CN201611019659A CN107014401A CN 107014401 A CN107014401 A CN 107014401A CN 201611019659 A CN201611019659 A CN 201611019659A CN 107014401 A CN107014401 A CN 107014401A
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temperature
resistance
formula
resistor
amplifier
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CN107014401B (en
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欧阳勇
胡军
何金良
王善祥
王中旭
赵根
曾嵘
庄池杰
张波
余占清
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Tsinghua University
Sichuan Energy Internet Research Institute EIRI Tsinghua University
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Sichuan Energy Internet Research Institute EIRI Tsinghua University
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01DMEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D3/00Indicating or recording apparatus with provision for the special purposes referred to in the subgroups
    • G01D3/028Indicating or recording apparatus with provision for the special purposes referred to in the subgroups mitigating undesired influences, e.g. temperature, pressure
    • G01D3/036Indicating or recording apparatus with provision for the special purposes referred to in the subgroups mitigating undesired influences, e.g. temperature, pressure on measuring arrangements themselves

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Abstract

The present invention relates to Sensor Design field, the problem of existing for prior art, a kind of magnetoresistive transducer temperature compensation means is provided, it carries out particular design in the amplifying circuit of existing magnetoresistive transducer or magnetoresistive transducer power supply part, temperature characterisitic to magnetoresistive transducer is compensated, to obtain higher precision.The present invention is powered by reference power supply to magnetoresistive transducer;Temperature-compensating amplifier amplifying circuit is compensated and amplified to magnetoresistive transducer temperature, as gain resistor R in temperature-compensating amplifier amplifying circuitgWhen with the input pickup resistance of third level operational amplifier two being NTC resistance, then according to NTC formula magnetoresistive transducer Calculation of Sensitivity module meter sensitivities;When the third level op-amp gain resistance and third level operational amplifier grounding resistance of temperature-compensating amplifier amplifier are PTC resistors, then according to PTC formula magnetoresistive transducer Calculation of Sensitivity module meter sensitivities.

Description

A kind of magnetoresistive transducer temperature compensation means
Technical field
The present invention relates to Sensor Design field, especially a kind of magnetoresistive transducer temperature compensation means.
Background technology
Magnetoresistive transducer is widely used in data storage field (hard disc of computer, MRAM), the fields of measurement of electric current, position Put measurement, the movement of object and speed, the fields of measurement of angle and angular speed etc..
Magnetoresistive transducer body has multi-layer film structure, spin valve structure, tunnel junction structure etc..With magnetic-field measurement demand Increase, magnetoresistive magnetic field sensor has more and more attracted the notice of researcher, in many property of magnetoresistive transducer In, temperature dependency is earnestly paid close attention to for people always.Existing lot of documents to the mechanism of temperature dependency (in many mechanism, The mechanism being commonly recognized is inelastic electron-magnetic core coupling mechanism) conduct in-depth research, but for reluctance linear sensing The temperature Compensation Strategy of device but less it has been proposed that.The existing method for reducing temperature drift is with favour by magnetic sensing chip internal resistance Stone full bridge formation is configured, but it is demonstrated experimentally that the temperature drift of the magnetic sensing chip under favour stone full bridge configuration still can not be neglected Slightly.
Experiment is as shown in Figure 1 with magnetoresistive transducer electric bridge chip temperature characteristic.Sensing chip curve is varied with temperature such as 1 institute Show, it was found from sensing curve, its sensitivity and magnetoresistive ratio are raised and reduced with temperature.Chip 0~linear the models of ± 40Oe The sensitivity and drift enclosed are varied with temperature as shown in Figure 2.
In the range of -40~80 DEG C, magnetoresistive chip sensitivity is raised and reduced with temperature, linear approximate relationship.With chip On the basis of 20 DEG C of sensing characteristicses, change of sensitivity temperature coefficient is about 770PPM/K, i.e. change is often spent in chip sensitivity 0.077%, the sensitivity maximum possible change 9.24% in the range of -40~80 DEG C.Chip drift is raised and proximal line with temperature Property rise, by 20 DEG C when on the basis of, drift transformation temperature coefficient is about 59PPM/K.Due to chip internal arm resistance usability Can very close symmetrical resistance, its drift varies less.
The content of the invention
The technical problems to be solved by the invention are:There is provided a kind of magnetoresistive transducer for the problem of existing for prior art Temperature compensation means, it is special that it is carried out in the amplifying circuit of existing magnetoresistive transducer or magnetoresistive transducer power supply part Design, reaches under special high-precision applications occasion, the temperature characterisitic to magnetoresistive transducer is compensated, to obtain higher essence Degree.
The technical solution adopted by the present invention is as follows:
A kind of magnetoresistive transducer temperature compensation means includes:
Magnetoresistive transducer Calculation of Sensitivity module, the sensitivity for calculating under magnetic sensor device unit source voltage can table It is shown as formula 1:
S1(T)=ST0(1+a(T-T0)) (1)
In formula, T is temperature, T0For reference temperature, ST0Sensitivity during for temperature T0, a is the temperature of transducer sensitivity Variation coefficient;
In actual Application in Sensing, it is necessary to match somebody with somebody stand-by power source and signal conditioning circuit for senser element, now overall magnetic is sensed The sensitivity of device is formula 2:
S (T)=pVSST0(1+a(T-T0)) (2)
In formula, S is overall magnetoresistive transducer sensitivity, and p is back-end processing circuit multiplication factor, and Vs supplies for magnetic sensor device Piezoelectric voltage;
Magnetoresistive transducer model of temperature compensation sets up module, and temperature change, formula 2 are introduced in p or Vs for basis Extend 2 kinds of forms, the non-invasive temperature compensation equation for carrying out Magnetic Sensor is formula (3) and formula (4):
S (T)=pVSST0(1+a(T-T0))(1+b(T-T0)) (3)
In formula, b is the temperature varying coefficient by temperature regulation circuit, (1+b (T-T0)) it is the temperature separated from p or Vs Degree change item;Assuming that senor operating temperature scope is T1~T2, wherein T1<T0<T2
Wherein, for formula (3), by optimizing b so that S (T) is in [T1,T2] interior change minimum;Therefore, relationship by objective (RBO) formula becomes For:
Under normal circumstances, the temperature varying coefficient of sensor | a |<0.1%/0C, therefore 1+aT2>0;
B values during temperature drift amount minimum are obtained according to formula (5) so that S (T) is minimum;
Wherein, for formula (4), it is only necessary to make b=a, now eliminated by zero pole point, so that it may temperature is completely eliminated Influence so that S (T) is minimum;
Non-intrusion type magnetoresistive transducer temperature compensation module, for being invaded by the first and/or second of the non-of Magnetic Sensor Enter formula temperature compensation module and carry out temperature-compensating, the non-invasive temperature compensating module of the first Magnetic Sensor is become according to temperature Change and change magnetic sensing chip two ends supply voltage Vs in real time to reduce temperature drift amount, carry out temperature-compensating;Second of magnetic sensing The non-invasive temperature compensating module of device is to change the amplification of magnetic sensing chip back end signal modulate circuit in real time according to temperature change Multiple p reduces temperature drift amount, carries out temperature-compensating.
Further, magnetoresistive transducer model of temperature compensation is set up in module for formula (3), is specifically included by optimizing b:
Step 21:By optimizing b so that S (T) is in [T1,T2] interior change minimum;Therefore, relationship by objective (RBO) formula is changed into:
Under normal circumstances, the temperature varying coefficient of sensor | a |<0.1%/0C, therefore 1+aT2>0;
Step 22:Divide situation discussion below:
The first situation, whenI.e.When:
Max (f (T))=f (T1), min (f (T))=f (T2), have:
WhenWhen, desired value is minimum:
Second of situation, whenI.e. When:
Min (f (T))=f (T2), have:
WhenWhen, desired value is minimum:
The third situation, whenI.e. When,
Min (f (T))=f (T1), have:
WhenWhen, desired value is minimum:
4th kind of situation, whenI.e.When:
Max (f (T))=f (T2), min (f (T))=f (T1), have:
WhenWhen, desired value is minimum:
4 kinds of situations of summary, it is known that
When, temperature drift is minimum, and is
Further, in non-intrusion type magnetoresistive transducer temperature compensation module the first Magnetic Sensor non-invasive temperature Compensating module changes magnetic sensing chip two ends supply voltage Vs according to temperature change to reduce during temperature drift amount in real time, specific step Suddenly it is:
Step 301:For formula (3), the front end power circuit to magneto-resistive transducing chip two ends supply voltage includes power supply Voltage is V1Common power, temperature change be V2+k(T-T0) just temperature sensitive power supply, first resistor, second resistance, 3rd resistor And feedback resistance;Wherein k units are V/° C;Common power is powered by first resistor to amplifier normal phase input end, Just temperature sensitive power supply is powered by second resistance to amplifier normal phase input end simultaneously, and amplifier normal phase input end passes through 3rd resistor Ground connection;Amplifier negative input is connected by feedback resistance with amplifier out, and amplifier out is used as front end power supply Circuit output end is magneto-resistive transducing chip power supply;Front end power circuit output end voltage V:
In formula, first resistor, second resistance, 3rd resistor and feedback resistance resistance correspond to R respectively1、R2、R3、R4;The One resistance, second resistance, 3rd resistor and feedback resistance are conventional, electric-resistance, V1For common power, V2For rate of change be positive k just Temperature sensitive power supply;
Step 302:Because k (T-T in formula (7)0) it is temperature sensitive part, it is relevant with temperature change, while 1+b in formula 3 (T-T0) it is also the temperature change of introducing on the basis of formula (2);Therefore can be by adjusting R1And R2, make in formula:It may be such that temperature drift amount is minimum, and be
Further, in non-intrusion type magnetoresistive transducer temperature compensation module the first Magnetic Sensor non-invasive temperature Compensating module changes magnetic sensing chip two ends supply voltage Vs according to temperature change to reduce temperature drift amount, specific steps in real time It is:
Step 311:For formula (3), the front end power circuit to magneto-resistive transducing chip two ends supply voltage includes power supply Voltage is V1Common power, first resistor, second resistance, 3rd resistor and feedback resistance, wherein feedback resistance be resistance It is R4+k(T-T0) PTC resistor;Common power is powered by first resistor to amplifier normal phase input end, and amplifier positive is defeated Enter end to be grounded by second resistance;Amplifier negative input is grounded by 3rd resistor simultaneously, and amplifier negative input leads to Feedback resistance is crossed to be connected with amplifier out;Wherein k units are V/° C;Amplifier out is used as front end power supply electricity Road output end is magneto-resistive transducing chip power supply;Front end power circuit output end voltage V:
In formula, first resistor, second resistance, 3rd resistor and feedback resistance resistance correspond to R respectively1、R2、R3、R4;The One resistance, second resistance, 3rd resistor are conventional, electric-resistance, V1For general mains voltage value, feedback resistance is that rate of change is that positive k is Positive temperature coefficient resistor;
Step 312:Because k (T-T in formula (8)0) it is temperature sensitive part, it is relevant with temperature change, while 1+b in formula 3 (T-T0) it is also the temperature change of introducing on the basis of formula (2);Therefore by adjusting R3 and R4, make in formula:It may be such that temperature drift amount is minimum, and be
Further, in non-intrusion type magnetoresistive transducer temperature compensation module the first Magnetic Sensor non-invasive temperature Compensating module changes magnetic sensing chip two ends supply voltage Vs according to temperature change to reduce temperature drift amount, specific steps in real time It is:
Step 321:For formula (4), the front end power circuit to magneto-resistive transducing chip two ends supply voltage includes power supply Voltage is V1Common power, first resistor, second resistance, 3rd resistor and feedback resistance;Common power passes through the first electricity Hinder and powered to amplifier normal phase input end, amplifier normal phase input end is grounded by second resistance;Amplifier negative sense input simultaneously End is grounded by 3rd resistor, and amplifier negative input is connected by feedback resistance with amplifier out;Wherein k units are V/° C;Amplifier out is magneto-resistive transducing chip power supply as front end power circuit output end;Front end power circuit is defeated Go out terminal voltage V:
In formula, first resistor, second resistance, 3rd resistor and feedback resistance resistance correspond to R respectively1、R2、R3、R4;The Two resistance, 3rd resistor and feedback resistance are conventional, electric-resistance, V1For general mains voltage value, first resistor is that rate of change is that-k is Negative temperature coefficient resister;;
Step 322:Because k (T-T in formula (9)0) it is temperature sensitive part, it is relevant with temperature change, while 1+ in formula (4) b(T-T0) it is also the temperature change of introducing on the basis of formula (2);By adjusting R1、R2Order: So that temperature drift amount is minimum, and it is 0.
Further, second of Magnetic Sensor non-intrusion type in the non-intrusion type magnetoresistive transducer temperature compensation module Temperature compensation module is to change magnetic sensing chip back end signal modulate circuit multiplication factor p in real time according to temperature change to reduce temperature Drift value is spent, temperature-compensating is carried out, specifically includes:
Step 331:Signal conditioning circuit is the amplifier instrument amplifier circuit of standard three, back end signal modulate circuit times magnification Number:
Work as R1And R3For PTC resistor, when reference formula (3) selects PTC resistor parameter, it can complete to reduce temperature drift amount, enter Trip temperature is compensated;
Step 332:First resistor resistance is R1, R1=R0(1+k(T-T0)), R0For temperature T0When second resistance resistance, k is Temperature varying coefficient, by R1=R0(1+k(T-T0)) bring formula (10) into, it can obtain:
Then according to the principle of formula (3), it was found from formula (11),
When, i.e. ΔminMinimum, temperature drift amount is minimum, carries out temperature-compensating;
Therefore by adjusting R0、Rg, any one parameter, two parameters or three parameters in tri- parameters of K, meet it, Then so that temperature drift amount is minimum, temperature-compensating is realized;
Step 333:3rd resistor resistance is R3:R3=R0(1+k(T-T0)) wherein, resistance when R0 is temperature T0, k is temperature Variation coefficient is spent, by R3=R0(1+k(T-T0)) bring formula (10) into, it can obtain:
Then according to the principle of formula (3), from formula (12) understand, it is necessary toWhen, i.e. ΔminMost Small, temperature drift amount is minimum, carries out temperature-compensating;Therefore adjustMiddle k is that may be such that temperature drift Amount is minimum, carries out temperature-compensating.
Second of Magnetic Sensor non-invasive temperature compensation mould in the non-intrusion type magnetoresistive transducer temperature compensation module Block is to change magnetic sensing chip back end signal modulate circuit multiplication factor p in real time according to temperature change to reduce temperature drift amount, Temperature-compensating is carried out, is specifically included:
Step 341:Back end signal modulate circuit multiplication factor:
Step 342:Work as RgAnd R2Suitable NTC resistance is selected, when reference formula (4) selects NTC resistance parameters, you can complete Into temperature drift amount is reduced, temperature-compensating is carried out;
Step 332:Second resistance resistance is R2Design parameter selection be:R2=R0(1+k(T-T0)), due to R2Appear in The denominator position of formula (8), then according to the principle of formula (4), it is necessary to b=a, you can eliminate temperature offset amount, then by R2=R0(1 +k(T-T0)) bring formula (10) into,
Wherein, R0For temperature T0When resistance, k is temperature varying coefficient, it was found from formula (13), only needs k=a to eliminate temperature Spend offset affect.
In summary, by adopting the above-described technical solution, the beneficial effects of the invention are as follows:
Because magnetoresistive transducer signal is had to by signal amplification circuit, the present invention is just using the amplification of the amplifier of standard three On circuit base, do not increase extra circuit structure, three amplifiers of mark are simply worked as into temperature-compensating amplifier amplification electricity in big circuit Gain resistor R in roadgWhen being substituted with the input pickup resistance of third level operational amplifier two with NTC resistance, or by temperature-compensating The third level op-amp gain resistance and third level operational amplifier grounding resistance of amplifier amplifier are substituted with PTC resistor. I.e. normal resistance only need to be replaced by thermo-sensitive resistor by compensation, and parameter regulation only need to be replaced by suitable resistance i.e. on primary circuit Can, the multiplication factor handled by conditioned signal, carrying out temperature-compensating hardly increases cost, while its compensation effect is very bright Aobvious, sensitivity temperature variation coefficient is only original 7.7% after compensation.
Brief description of the drawings
Examples of the present invention will be described by way of reference to the accompanying drawings, wherein:
Fig. 1 is that sensing curve varies with temperature figure in magnetoresistive chip temperature characterisitic.
Fig. 2 is that temperature drift varies with temperature figure in magnetoresistive chip temperature characterisitic.
Fig. 3 is to be directed to formula (3), the first compensation circuit structural representation of magnetoresistive transducer front-end power voltage segment.
Fig. 4 is to be directed to second of compensation circuit structural representation of formula (3) magnetoresistive transducer front-end power voltage segment.
Fig. 5 is to be directed to second of compensation circuit structural representation of formula (4) magnetoresistive transducer front-end power voltage segment.
Fig. 6 is magnetoresistive transducer rear end modulate circuit temperature-compensation circuit structural representation.
Fig. 7 is second of compensation circuit effect temperature compensation figure of magnetoresistive transducer.
Embodiment
All features disclosed in this specification, or disclosed all methods or during the step of, except mutually exclusive Feature and/or step beyond, can combine in any way.
Any feature disclosed in this specification, unless specifically stated otherwise, can be equivalent by other or with similar purpose Alternative features are replaced.I.e., unless specifically stated otherwise, each feature is an example in a series of equivalent or similar characteristics .
1st, related description of the present invention:
Fig. 6, signal conditioning circuit is the amplifier instrument amplifier circuit of standard three;Including first order operational amplifier A 1, Two-level operating amplifier A2With third level operational amplifier A3And gain resistor, first resistor, second resistance, 3rd resistor. Gain resistor is connected on the first operational amplifier A1With the second operational amplifier A2Between.First resistor is connected across first order fortune Calculate amplifier A inverting inputs and first order operational amplifier A1Between output end, first resistor is connected across second level computing and put Big device A2Reverse input end and second level operational amplifier A2Between output end.First order operational amplifier output terminal and the third level Second resistance is concatenated between operational amplifier reverse input end;Second level operational amplifier output terminal and third level operational amplifier Second resistance is concatenated between normal phase input end;3rd resistor R is connected across the 3rd operational amplifier A3Reverse input end and the third level Between operational amplifier output terminal;Third level operational amplifier positive input is grounded by 3rd resistor.First resistor, second Resistance, 3rd resistor, gain resistor resistance correspond to R respectively1、R2、R3、Rg
Temperature-compensating amplifier amplifying circuit refers to the amplifier instrument amplifier of standard three;Gain resistor R in circuitgWith The second resistance of the input of three-stage operational amplifier two connection is NTC resistance;Or the amplification of first resistor R1, temperature-compensating amplifier The third level operational amplifier 3rd resistor R of device3The 3rd resistor R being grounded with third level operational amplifier3It is PTC resistor..
The course of work:
It was found that, being compared with modification magnetic sensing chip internal structure with reducing temperature drift, using outer-rear end electricity The mode of road compensation has the advantages that non-intrusion type, high reliability, easily realized.Experiment shows, the outside proposed using this section Temperature Compensation Strategy can effectively reduce temperature drift (temperature drift reduces 43.5 times) and experiment and theory have high consistency.
A kind of magnetoresistive transducer temperature compensation means based on temperature sensitive power supply includes:
Magnetoresistive transducer Calculation of Sensitivity module, is represented by for the sensitivity under magnetic sensor device unit source voltage Formula 1:
S1(T)=ST0(1+a(T-T0)) (1)
In formula, T is temperature, T0For reference temperature, ST0For temperature T0When sensitivity, a be transducer sensitivity temperature Variation coefficient;
In actual Application in Sensing, it is necessary to match somebody with somebody stand-by power source and signal conditioning circuit for senser element, now overall magnetic is sensed The sensitivity of device is formula 2:
S (T)=pVSST0(1+a(T-T0)) (2)
In formula, S is overall magnetoresistive transducer sensitivity, and p is back-end processing circuit multiplication factor, and Vs supplies for magnetic sensor device Piezoelectric voltage;Magnetoresistive transducer model of temperature compensation sets up module, and for introducing temperature change in p or Vs, formula 2 is extended 2 kinds of forms, the non-invasive temperature compensation equation for carrying out Magnetic Sensor is formula (3) and formula (4):
S (T)=pVSST0(1+a(T-T0))(1+b(T-T0)) (3)
In formula, b is the temperature varying coefficient by temperature regulation circuit, (1+b (T-T0)) it is the temperature separated from p or Vs Degree change item;Assuming that senor operating temperature scope is T1~T2, wherein T1<T0<T2
Wherein, for formula (3), by optimizing b so that S (T) is in [T1,T2] interior change minimum;Therefore, relationship by objective (RBO) formula becomes For:
Under normal circumstances, the temperature varying coefficient of sensor | a |<0.1%/0C, therefore 1+aT2>0;
Divide situation discussion below:
The first situation, whenI.e.When:
Max (f (T))=f (T1), min (f (T))=f (T2), have:
WhenWhen, desired value is minimum:
Second of situation, whenI.e.When:Min (f (T))=f (T2), have:
WhenWhen, desired value is minimum:
The third situation, whenI.e.When,Min (f (T))=f (T1), have:
WhenWhen, desired value is minimum:
4th kind of situation, whenImmediately:
Max (f (T))=f (T2), min (f (T))=f (T1), have:
WhenWhen, desired value is minimum:
4 kinds of situations of summary, it is known that
When, temperature drift is minimum, and is
Under normal circumstances, the temperature varying coefficient of sensor | a |<0.1%/0C, therefore 1+aT2>0;
B values during temperature drift amount minimum are obtained according to formula (5) so that S (T) is minimum;
Wherein, for formula (4), it is only necessary to make b=a, now eliminated by zero pole point, so that it may temperature is completely eliminated Influence so that S (T) is minimum;
Non-intrusion type magnetoresistive transducer temperature compensation module, for by passing through the first and/or second Magnetic Sensor Non-invasive temperature compensating module carries out temperature-compensating, and the non-invasive temperature compensating module of the first Magnetic Sensor is according to temperature Degree change changes magnetic sensing chip two ends supply voltage Vs to reduce temperature drift amount in real time, carries out temperature-compensating;Second of magnetic The non-invasive temperature compensating module of sensor is to change magnetic sensing chip back end signal modulate circuit in real time according to temperature change Multiplication factor p reduces temperature drift amount, carries out temperature-compensating.
1st, magnetoresistive transducer model of temperature compensation, which sets up module, includes three kinds of compensation:
1) the first compensation way:(as shown in Figure 3);
In step 2 when changing magnetic sensing chip two ends supply voltage Vs to reduce temperature drift, comprise the concrete steps that:
Step 201:For formula (3), the front end power circuit to magneto-resistive transducing chip two ends supply voltage includes power supply Voltage is V1Common power, temperature change be V2+k(T-T0) just temperature sensitive power supply, first resistor, second resistance, 3rd resistor And feedback resistance;Wherein k units are V/° C;Common power is powered by first resistor to amplifier normal phase input end, Just temperature sensitive power supply is powered by second resistance to amplifier normal phase input end simultaneously, and amplifier normal phase input end passes through 3rd resistor Ground connection;Amplifier negative input is connected by feedback resistance with amplifier out, and amplifier out is used as front end power supply Circuit output end is magneto-resistive transducing chip power supply;Front end power circuit output end voltage V:
In formula, first resistor, second resistance, 3rd resistor and feedback resistance resistance correspond to R respectively1、R2、R3、R4;The One resistance, second resistance, 3rd resistor and feedback resistance are conventional, electric-resistance, V1For general mains voltage value, V2It is just for rate of change K just temperature sensitive supply voltage value;
Step 202:Because k (T-T in formula (7)0) it is temperature sensitive part, it is relevant with temperature change, while 1+b in formula 3 (T-T0) it is also the temperature change of introducing on the basis of formula (2);Therefore it can be made by adjusting R1 and R2 in formula:It may be such that temperature drift amount is minimum, and be
Second of compensation situation:(as shown in Figure 4)
In step 2 when changing magnetic sensing chip two ends supply voltage Vs to reduce temperature drift, comprise the concrete steps that:
Step 211:For formula (3), the front end power circuit to magneto-resistive transducing chip two ends supply voltage includes power supply Voltage is V1Common power, first resistor, second resistance, 3rd resistor and feedback resistance, wherein feedback resistance be resistance It is R4+ k (T-T0) PTC resistor;Common power is powered by first resistor to amplifier normal phase input end, and amplifier positive is defeated Enter end to be grounded by second resistance;Amplifier negative input is grounded by 3rd resistor simultaneously, and amplifier negative input leads to Feedback resistance is crossed to be connected with amplifier out;Wherein k units are V/° C;Amplifier out is used as front end power supply electricity Road output end is magneto-resistive transducing chip power supply;Front end power circuit output end voltage V:
In formula, first resistor, second resistance, 3rd resistor and feedback resistance resistance correspond to R respectively1、R2、R3、R4;The One resistance, second resistance, 3rd resistor are conventional, electric-resistance, V1For general mains voltage value, the 4th resistance is that rate of change is that positive k is Positive temperature coefficient resistor;
Step 212:Because k (T-T in formula (8)0) it is temperature sensitive part, it is relevant with temperature change, while 1+b in formula 3 (T-T0) it is also the temperature change of introducing on the basis of formula (2);Therefore by adjusting R3And R4, make in formula:It may be such that temperature drift amount is minimum, and be
The third compensation method:(as shown in Figure 5)
In step 2 when changing magnetic sensing chip two ends supply voltage Vs to reduce temperature drift, comprise the concrete steps that:
Step 211:For formula (4), the front end power circuit to magneto-resistive transducing chip two ends supply voltage includes power supply Voltage is V1Common power, first resistor, second resistance, 3rd resistor and feedback resistance;Common power passes through the first electricity Hinder and powered to amplifier normal phase input end, amplifier normal phase input end is grounded by second resistance;Amplifier negative sense input simultaneously End is grounded by 3rd resistor, and amplifier negative input is connected by feedback resistance with amplifier out;Wherein k units are V/° C;Amplifier out is magneto-resistive transducing chip power supply as front end power circuit output end;Front end power circuit is defeated Go out terminal voltage V:
In formula, first resistor, second resistance, 3rd resistor and feedback resistance resistance correspond to R respectively1、R2、R3、R4;The Two resistance, 3rd resistor and feedback resistance are conventional, electric-resistance, V1For general mains voltage value, first resistor is that rate of change is-k (T-T0) it is negative temperature coefficient resister;
Step 212:Because k (T-T in formula (9)0) it is temperature sensitive part, it is relevant with temperature change, while 1+ in formula (4) b(T-T0) it is also the temperature change of introducing on the basis of formula (2);By adjusting R1, R2 order: So that temperature drift amount is minimum, and it is 0.
2nd, the temperature compensation nursed one's health for back end signal, as shown in Figure 6:
The circuit nurses one's health multiple:
Work as R1And R3For PTC resistor, when reference formula (3) selects PTC resistor parameter, it can complete to reduce temperature drift amount, enter Trip temperature is compensated;
1) first resistor resistance is R1, R1=R0(1+k(T-T0)), R0For temperature T0When second resistance valued resistor, k for temperature Variation coefficient is spent, by R1=R0(1+k(T-T0)) bring formula (10) into, it can obtain:
Then according to the principle of formula (3), it was found from formula (11),
When, i.e. ΔminMinimum, temperature drift amount is minimum, carries out temperature-compensating;
Therefore by adjusting R0, Rg, any one parameter, two parameters or three parameters in tri- parameters of K, expire it Foot, then cause temperature drift amount minimum, realize temperature-compensating;
2) 3rd resistor resistance is R3:R3=R0(1+k(T-T0)) wherein, R0For temperature T0When second resistance resistance, k for temperature Variation coefficient is spent, by R3=R0(1+k(T-T0)) bring formula (10) into, it can obtain:
Then according to the principle of formula (3), from formula (12) understand, it is necessary toWhen, i.e. ΔminMost Small, temperature drift amount is minimum, carries out temperature-compensating;Therefore adjustMiddle k is that may be such that temperature drift Amount is minimum, carries out temperature-compensating.
2) back end signal modulate circuit multiplication factor p carrys out temperature drift amount, carries out the temperature compensation tool of temperature-compensating Body is:Step 341:Back end signal modulate circuit multiplication factor:
Step 342:When gain resistor and second resistance selection NTC resistance, reference formula (4) selects NTC resistance parameters, It can complete to reduce temperature drift amount, carry out temperature-compensating;
Step 332:Second resistance resistance is R2Design parameter selection be:R2=R0(1+k(T-T0)), then due to R2Occur In the denominator position of formula (8), according to the principle of formula (4), it is necessary to b=a, you can eliminate temperature offset amount, then by R2=R0(1 +k(T-T0)) bring formula (10) into,
Wherein, R0For temperature T0When second resistance valued resistor, k is temperature varying coefficient, it was found from formula (13), only needs k= A can eliminate temperature offset amount influence, therefore the resistance R of regulation second resistance2=R0(1+a(T-T0)), you can eliminate temperature drift Shifting amount, carries out temperature-compensating.
Compensation effect is as shown in fig. 7, a series of straight line of cubic graphic data formation is magnetoresistive transducer spirit before compensation in figure Sensitivity Sui temperature variation data point;When a series of straight line that triangle drift angles are formed upward in figure is after power supply end compensating, magnetic It is temperature-compensating that resistance transducer sensitivity, which varies with temperature a series of straight line that triangle drift angles are formed down in data point, figure, After the compensation of amplifier amplifying circuit, magnetoresistive transducer sensitivity varies with temperature data point.
It can be seen that, theoretical curve and experimental data point are basically identical, powered using magnetic sensing chip is changed with temperature in Fig. 7 Voltage method progress temperature-compensating can effectively reduce sensitivity temperature drift, and (sensitivity temperature drift is reduced into six before compensation / mono-).
In Fig. 7, under high temperature (temperature is higher than 40 degrees Celsius), empirical curve and theoretical curve have one after the compensation of sensitivity Fixed deviation, and departure degree increases with the rise of temperature.This description of test:1. sensitivity vary with temperature it is very small, no The slight change of sensitivity caused by position deviation can be ignored;2. theoretical calculation and experimental result can be coincide with extraordinary;
3. sensitivity temperature change is compensated by changing magnetic sensing chip supply voltage has feasibility.
The invention is not limited in foregoing embodiment.The present invention, which is expanded to, any in this manual to be disclosed New feature or any new combination, and disclose any new method or process the step of or any new combination.

Claims (7)

1. a kind of magnetoresistive transducer temperature compensation means, it is characterised in that including:
Magnetoresistive transducer Calculation of Sensitivity module, is represented by for calculating the sensitivity under magnetic sensor device unit source voltage Formula (1):
S1(T)=ST0(1+a(T-T0)) (1)
In formula, T is temperature, T0For reference temperature, ST0For temperature T0When sensitivity, a be transducer sensitivity temperature change system Number;
In actual Application in Sensing, it is necessary to match somebody with somebody stand-by power source and signal conditioning circuit for senser element, now overall Magnetic Sensor Sensitivity is formula 2:
S (T)=pVSST0(1+a(T-T0)) (2)
In formula, S is overall magnetoresistive transducer sensitivity, and p is back-end processing circuit multiplication factor, and Vs is that magnetic sensor device is powered electricity Pressure;
Magnetoresistive transducer model of temperature compensation sets up module, for according to temperature change is introduced in p or Vs, formula 2 to extend Go out 2 kinds of forms, the non-invasive temperature compensation equation for carrying out Magnetic Sensor is formula (3) and formula (4):
S (T)=pVSST0(1+a(T-T0))(1+b(T-T0)) (3)
In formula, b is the temperature varying coefficient by temperature regulation circuit, (1+b (T-T0)) it is that the temperature separated from p or Vs becomes Change item;Assuming that senor operating temperature scope is T1~T2, wherein T1<T0<T2
Wherein, for formula (3), by optimizing b so that S (T) is in [T1,T2] interior change minimum;Therefore, relationship by objective (RBO) formula is changed into:
Under normal circumstances, the temperature varying coefficient of sensor | a |<0.1%/0C, therefore 1+aT2>0;
B values during temperature drift amount minimum are obtained according to formula (5) so that S (T) is minimum;
Wherein, for formula (4), it is only necessary to make b=a, now eliminated by zero pole point, so that it may the shadow of temperature is completely eliminated Ring so that S (T) is minimum;
Non-intrusion type magnetoresistive transducer temperature compensation module, for the non-intrusion type by the first and/or second of Magnetic Sensor Temperature compensation module carries out temperature-compensating, and the first Magnetic Sensor non-invasive temperature compensating module is real-time according to temperature change Change magnetic sensing chip two ends supply voltage Vs to reduce temperature drift amount, carry out temperature-compensating;Second of Magnetic Sensor is non-to invade It is to change magnetic sensing chip back end signal modulate circuit multiplication factor p in real time according to temperature change to subtract to enter formula temperature compensation module Small temperature drift amount, carries out temperature-compensating.
2. a kind of magnetoresistive transducer temperature compensation means according to claim 1, it is characterised in that magnetoresistive transducer temperature Compensation model is set up in module for formula (3), is specifically included by optimizing b:
Step 21:By optimizing b so that S (T) is in [T1,T2] interior change minimum;Therefore, relationship by objective (RBO) formula is changed into:
Under normal circumstances, the temperature varying coefficient of sensor | a |<0.1%/DEG C, therefore 1+aT2>0;
Step 22:Divide situation discussion below:
The first situation, whenI.e.When:
Max (f (T))=f (T1), min (f (T))=f (T2), have:
WhenWhen, desired value is minimum:
Second of situation, whenI.e.When:
Have:
WhenWhen, desired value is minimum:
The third situation, whenI.e.When,
Have:
WhenWhen, desired value is minimum:
4th kind of situation, whenI.e.When:
Max (f (T))=f (T2), min (f (T))=f (T1), have:
WhenWhen, desired value is minimum:
4 kinds of situations of summary, it is known that
When, temperature drift is minimum, and is
3. a kind of magnetoresistive transducer temperature compensation means according to claim 1, it is characterised in that non-intrusion type magnetic resistance is passed The first Magnetic Sensor non-invasive temperature compensating module changes magnetic biography according to temperature change in real time in sensor temperature compensation module Sense chip two ends supply voltage Vs reduces during temperature drift amount, comprises the concrete steps that:
Step 301:For formula (3), the front end power circuit to magneto-resistive transducing chip two ends supply voltage includes supply voltage For V1Common power, temperature change be V2+k(T-T0) just temperature sensitive power supply, first resistor, second resistance, 3rd resistor and Feedback resistance;Wherein k units are V/° C;Common power is powered by first resistor to amplifier normal phase input end, simultaneously Just temperature sensitive power supply is powered by second resistance to amplifier normal phase input end, and amplifier normal phase input end is connect by 3rd resistor Ground;Amplifier negative input is connected by feedback resistance with amplifier out, and amplifier out is used as front end power supply electricity Road output end is magneto-resistive transducing chip power supply;Front end power circuit output end voltage V:
In formula, in formula, R1、R2、R3、R4First resistor, second resistance, 3rd resistor, feedback resistance resistance, first are corresponded to respectively Resistance, second resistance, 3rd resistor and feedback resistance are conventional, electric-resistance, V1For general mains voltage value, V2It is positive k for rate of change Just temperature sensitive supply voltage value;
Step 302:Because k (T-T in formula (7)0) it is temperature sensitive part, it is relevant with temperature change, while 1+b (T-T in formula 30) It is also the temperature change of introducing on the basis of formula (2);Therefore can be by adjusting R1And R2, make in formula:It may be such that temperature drift amount is minimum, and be
4. a kind of magnetoresistive transducer temperature compensation means according to claim 1, it is characterised in that non-intrusion type magnetic resistance is passed The first Magnetic Sensor non-invasive temperature compensating module changes magnetic biography according to temperature change in real time in sensor temperature compensation module Sense chip two ends supply voltage Vs reduces temperature drift amount, comprises the concrete steps that:
Step 311:For formula (3), the front end power circuit to magneto-resistive transducing chip two ends supply voltage includes supply voltage For V1Common power, first resistor, second resistance, 3rd resistor and feedback resistance, wherein feedback resistance be resistance be R4+k (T-T0) PTC resistor;Common power is powered by first resistor to amplifier normal phase input end, and amplifier normal phase input end leads to Cross second resistance ground connection;Amplifier negative input is grounded by 3rd resistor simultaneously, and amplifier negative input passes through feedback Resistance is connected with amplifier out;Wherein k units are V/° C;Amplifier out is exported as front end power circuit Hold as magneto-resistive transducing chip power supply;Front end power circuit output end voltage V:
In formula, R1、R2、R3、R4Respectively first resistor, second resistance, 3rd resistor, the resistance of feedback resistance, first resistor, Two resistance and 3rd resistor are conventional, electric-resistance, V1For general mains voltage value, feedback resistance is that rate of change is that positive k is positive temperature system Number resistance;
Step 312:Because k (T-T in formula (8)0) it is temperature sensitive part, it is relevant with temperature change, while 1+b (T-T in formula 30) It is also the temperature change of introducing on the basis of formula (2);Therefore by adjusting R3And R4, make in formula:It may be such that temperature drift amount is minimum, and be
5. a kind of magnetoresistive transducer temperature compensation means according to claim 1, it is characterised in that non-intrusion type magnetic resistance is passed The first Magnetic Sensor non-invasive temperature compensating module changes magnetic biography according to temperature change in real time in sensor temperature compensation module Sense chip two ends supply voltage Vs reduces temperature drift amount, comprises the concrete steps that:
Step 321:For formula (4), the front end power circuit to magneto-resistive transducing chip two ends supply voltage includes supply voltage For V1Common power, first resistor, second resistance, 3rd resistor and feedback resistance;Common power is given by first resistor Amplifier normal phase input end is powered, and amplifier normal phase input end is grounded by second resistance;Amplifier negative input leads to simultaneously 3rd resistor ground connection is crossed, amplifier negative input is connected by feedback resistance with amplifier out;Wherein k units be volt/ Degree Celsius;Amplifier out is magneto-resistive transducing chip power supply as front end power circuit output end;Front end power circuit output Terminal voltage V:
In formula, R1、R2、R3、R4Respectively first resistor, second resistance, 3rd resistor, the resistance of feedback resistance;Second resistance, Three resistance and feedback resistance are conventional, electric-resistance, V1For general mains voltage value, first resistor is that rate of change is that-k is negative temperature Coefficient resistance;;
Step 322:Because k (T-T in formula (9)0) it is temperature sensitive part, it is relevant with temperature change, while 1+b (T- in formula (4) T0) it is also the temperature change of introducing on the basis of formula (2);By adjusting R1、R2Order:It may be such that Temperature drift amount is minimum, and is 0.
6. a kind of magnetoresistive transducer temperature compensation means according to claim 1, it is characterised in that the non-intrusion type magnetic Hindering second of Magnetic Sensor non-invasive temperature compensating module in Sensor Temperature Compensation module is changed in real time according to temperature change Become magnetic sensing chip back end signal modulate circuit multiplication factor p to reduce temperature drift amount, carry out temperature-compensating, specifically include:
Step 331:Signal conditioning circuit is the amplifier instrument amplifier circuit of standard three, back end signal modulate circuit multiplication factor:
When first resistor and 3rd resistor are PTC resistor, when reference formula (3) selects PTC resistor parameter, it can complete to reduce temperature Drift value, carries out temperature-compensating;
Step 332:First resistor resistance is R1, R1=R0(1+k(T-T0)), R0For temperature T0When second resistance valued resistor, k is Temperature varying coefficient, by R1=R0(1+k(T-T0)) bring formula (10) into, it can obtain:
Then according to the principle of formula (3), it was found from formula (11),
When, i.e. ΔminMinimum, temperature drift amount is minimum, carries out temperature-compensating;
Therefore by adjusting R0, Rg, any one parameter, two parameters or three parameters in tri- parameters of K, meet it, then make Obtain temperature drift amount minimum, realize temperature-compensating;
Step 333:3rd resistor resistance is R3:R3=R0(1+k(T-T0)) wherein, R0For temperature T0When second resistance resistance electricity Resistance, k is temperature varying coefficient, by R3=R0(1+k(T-T0)) bring formula (10) into, it can obtain:
Then according to the principle of formula (3), from formula (12) understand, it is necessary toWhen, i.e. ΔminMinimum, Temperature drift amount is minimum, carries out temperature-compensating;Therefore adjustMiddle k is that may be such that temperature drift amount Minimum, carries out temperature-compensating.
7. a kind of magnetoresistive transducer temperature compensation means according to claim 1, it is characterised in that the non-intrusion type magnetic Hindering second of Magnetic Sensor non-invasive temperature compensating module in Sensor Temperature Compensation module is changed in real time according to temperature change Become magnetic sensing chip back end signal modulate circuit multiplication factor p to reduce temperature drift amount, carry out temperature-compensating, specifically include:
Step 341:Back end signal modulate circuit multiplication factor:
Step 342:When gain resistor and second resistance select suitable NTC resistance, reference formula (4) selection NTC resistance ginsengs Number, you can complete to reduce temperature drift amount, carry out temperature-compensating;
Step 332:Second resistance resistance is R2Design parameter selection be:R2=R0(1+k(T-T0)), due to R2Appear in formula (8) denominator position, then according to the principle of formula (4), it is necessary to b=a, you can eliminate temperature offset amount, then by R2=R0(1+k (T-T0)) bring formula (10) into,
Wherein, R0For temperature T0When second resistance resistance, k is temperature varying coefficient, it was found from formula (13), only needs k=a to disappear Except temperature offset amount influence.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109342984A (en) * 2018-11-16 2019-02-15 南方电网科学研究院有限责任公司 A kind of magnetoresistive chip temperature and humidity influences rectification building-out system and method
CN110987028A (en) * 2019-11-22 2020-04-10 珠海格力电器股份有限公司 Temperature compensation system and compensation method of magnetic encoder
CN111506148A (en) * 2020-05-14 2020-08-07 四川大学 Power supply circuit with magneto-resistance sensing device sensitivity temperature drift compensation function
CN115855122A (en) * 2022-11-21 2023-03-28 珠海多创科技有限公司 Method and device for performing temperature compensation on sensor chip and electronic equipment

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1203662A (en) * 1995-12-04 1998-12-30 航空发动机的结构和研究公司 Wheatstone bridge with temp. gradient compensation between main resistor of bridge and its application in pressure-sensor with foil gauge
US6154027A (en) * 1997-10-20 2000-11-28 Analog Devices, Inc. Monolithic magnetic sensor having externally adjustable temperature compensation
JP2001091296A (en) * 1999-09-21 2001-04-06 Tokai Rika Co Ltd Sensor with temperature compensation function
CN1704742A (en) * 2004-05-31 2005-12-07 雅马哈发动机株式会社 Physical quantity detection device with bridge circuit and temperature compensation method
CN102539062A (en) * 2011-12-29 2012-07-04 中国燃气涡轮研究院 Sensor temperature drift compensation method and pressure sensor box
CN102866430A (en) * 2012-07-16 2013-01-09 上海大学 Wireless communication technology-based geomagnetic measurement system and temperature compensation method thereof
CN103257017A (en) * 2011-12-29 2013-08-21 中国燃气涡轮研究院 Compensation method for temperature drift of sensor

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1203662A (en) * 1995-12-04 1998-12-30 航空发动机的结构和研究公司 Wheatstone bridge with temp. gradient compensation between main resistor of bridge and its application in pressure-sensor with foil gauge
US6154027A (en) * 1997-10-20 2000-11-28 Analog Devices, Inc. Monolithic magnetic sensor having externally adjustable temperature compensation
JP2001091296A (en) * 1999-09-21 2001-04-06 Tokai Rika Co Ltd Sensor with temperature compensation function
CN1704742A (en) * 2004-05-31 2005-12-07 雅马哈发动机株式会社 Physical quantity detection device with bridge circuit and temperature compensation method
CN102539062A (en) * 2011-12-29 2012-07-04 中国燃气涡轮研究院 Sensor temperature drift compensation method and pressure sensor box
CN103257017A (en) * 2011-12-29 2013-08-21 中国燃气涡轮研究院 Compensation method for temperature drift of sensor
CN102866430A (en) * 2012-07-16 2013-01-09 上海大学 Wireless communication technology-based geomagnetic measurement system and temperature compensation method thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109342984A (en) * 2018-11-16 2019-02-15 南方电网科学研究院有限责任公司 A kind of magnetoresistive chip temperature and humidity influences rectification building-out system and method
CN110987028A (en) * 2019-11-22 2020-04-10 珠海格力电器股份有限公司 Temperature compensation system and compensation method of magnetic encoder
CN111506148A (en) * 2020-05-14 2020-08-07 四川大学 Power supply circuit with magneto-resistance sensing device sensitivity temperature drift compensation function
CN111506148B (en) * 2020-05-14 2021-06-25 四川大学 Power supply circuit with magneto-resistance sensing device sensitivity temperature drift compensation function
CN115855122A (en) * 2022-11-21 2023-03-28 珠海多创科技有限公司 Method and device for performing temperature compensation on sensor chip and electronic equipment

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