CN111506148B - Power supply circuit with magneto-resistance sensing device sensitivity temperature drift compensation function - Google Patents
Power supply circuit with magneto-resistance sensing device sensitivity temperature drift compensation function Download PDFInfo
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- CN111506148B CN111506148B CN202010409827.3A CN202010409827A CN111506148B CN 111506148 B CN111506148 B CN 111506148B CN 202010409827 A CN202010409827 A CN 202010409827A CN 111506148 B CN111506148 B CN 111506148B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
Abstract
The invention relates to a power supply circuit with a magneto-resistance sensing device sensitivity temperature drift compensation function. The sensitivity of the magnetoresistive sensing device has a negative linear temperature coefficient. The invention comprises a temperature detection circuit, a voltage reference irrelevant to temperature, an arithmetic circuit and a linear voltage-stabilized power supply circuit. For a sensitivity temperature coefficient of-CTThe magneto-resistance sensing device can obtain the temperature coefficient C by adjusting the operation coefficient x of the operation circuitTThe positive temperature coefficient power supply of (1). The power supply circuit is used as a power supply of the magneto-resistance sensing device, and can remarkably reduce the temperature drift condition of the sensitivity of the magneto-resistance sensing device.
Description
Technical Field
The invention belongs to the field of sensor signal conditioning circuits, and relates to a power supply circuit with a magneto-resistance sensing device sensitivity temperature drift compensation function.
Background
The magnetoresistance sensing device prepared based on giant magnetoresistance effect, anisotropic magnetoresistance effect or tunneling magnetoresistance effect is widely applied to various magnetic field detection fields due to high sensitivity and resolution. However, in practical applications, it has been found that the sensitivity of the magnetoresistive sensing devices decreases significantly with increasing temperature. Taking a giant magnetoresistive sensing device as an example, the temperature drift coefficient of its sensitivity is about-0.25%/° C. For application scenes with large environmental temperature change, such as the fields of automobile electronics, industrial control and the like, the temperature change range is generally-40 ℃ to 125 ℃, and the deviation of the sensitivity of the sensing device relative to the room temperature (25 ℃) reaches 25%. If the temperature drift is not compensated, the accuracy of analyzing the output signal of the magneto-resistance sensing device is obviously influenced.
Disclosure of Invention
The invention provides a power circuit scheme with a temperature drift compensation function aiming at the sensitivity temperature drift phenomenon of a magneto-resistance sensing device.
The technical scheme adopted by the invention for solving the technical problem is as follows:
a power supply circuit with the sensitivity temperature drift compensation function of a magneto-resistance sensing device comprises a temperature detection circuit, a voltage reference irrelevant to temperature, an arithmetic circuit and a linear voltage-stabilized power supply circuit;
the temperature detection circuit is used for generating a voltage signal related to the ambient temperature and inputting the voltage signal to one end of the operation circuit;
the voltage reference irrelevant to the temperature is used for generating a voltage signal irrelevant to the temperature and inputting the voltage signal to the other end of the operation circuit;
the input end of the operation circuit is respectively connected to the temperature detection circuit and a voltage reference irrelevant to temperature and used for generating two voltage signals after voltage operation;
the linear voltage-stabilized power supply circuit is provided with a reference signal input end, and the voltage of the output end of the linear voltage-stabilized power supply circuit is in direct proportion to the voltage of the reference signal;
the output of the linear voltage-stabilized power supply circuit provides power supply voltage for the magneto-resistance sensing device;
furthermore, the magneto-resistance sensing device is a sensing device which is prepared based on one of giant magneto-resistance effect, anisotropic magneto-resistance effect or tunneling magneto-resistance effect and has a Wheatstone bridge structure; for an external magnetic field of strength B and a supply voltage VDDOf output voltage V thereofoutThe following functional relationship exists with the sensitivity S and the temperature T:
wherein S is0Is the sensitivity of the magnetoresistive sensing device at 25 ℃;
CTis the temperature coefficient of the sensitivity of the magnetoresistive sensing device;
the temperature detection mode of the temperature detection circuit is based on one or a combination of several principles of a semiconductor PN junction, a negative temperature coefficient resistor and a thermocouple; the circuit generates a voltage signal V related to the ambient temperatureaWith the ambient temperature T, the following functional relationship exists:
wherein, Va0Is the output voltage of the temperature detection circuit at 25 ℃;
C' Ta temperature coefficient of an output voltage for the temperature detection circuit;
the voltage signal V after operation output by the operation circuitcWith the voltage signal V output by the temperature detection circuitaAnd a temperature independent voltage reference output voltage signal VbThe following functional relationship exists:
wherein x is an operation coefficient and is determined by a designed operation circuit;
voltage signal V to be correlated with ambient temperatureaAfter the relation function with the ambient temperature T is substituted and arranged, the following relation can be obtained:
the output voltage V of the linear voltage-stabilized power supply circuitcalOutput voltage signal V of AND operation circuitcThe following functional relationship exists:
y is a proportionality coefficient of the output voltage of the linear stabilized voltage supply relative to the input voltage of the reference signal;
furthermore, the arithmetic circuit can lead the temperature coefficient C of the sensitivity of the magneto-resistance sensing device to be higher than the temperature coefficient C by reasonably designing the arithmetic coefficient xTTemperature coefficient C of output voltage of temperature detection circuit' TThe following relationship is satisfied:
at this time, the output voltage V of the linear regulated power supplycalWith temperature T, there is a functional relationship as follows:
wherein, Vcal0Represents the output voltage of the linear voltage-stabilized power supply circuit at 25 ℃.
When the power supply circuit is applied to the magnetoresistive sensing device, the output signal of the sensing device becomes, for a specific magnetic field B:
the invention has the beneficial effects that: after the invention is applied to a magneto-resistor sensing device, the relative maximum deviation of output signals of the sensing device can be from 100 ℃ within the temperature range of-40 ℃ to 125 ℃ through reasonably designing the operational coefficient xTBecome (100C)T）2. Due to CT< 1%, the deviation is significantly reduced compared to the raw output signal of the sensor.
Drawings
Fig. 1 is a schematic diagram of the circuit of the present invention.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
The power circuit with the sensitivity temperature drift compensation function of the magneto-resistance sensing device is shown in figure 1. The circuit consists of a temperature detection circuit 101, a voltage reference 102 independent of temperature, an arithmetic circuit 103 and a linear stabilized voltage power supply circuit 104.
The temperature detection circuit 101 detects the ambient temperature and generates a voltage signal related to the ambient temperature;
the temperature independent voltage reference 102 generates a temperature independent voltage signal;
the two signals are input to the arithmetic circuit 103 for operation and then output to the reference signal input end of the linear voltage-stabilized power supply circuit 104;
the linear voltage-stabilized power supply 104 outputs a power supply voltage proportional to the reference signal as a power supply of the magneto-resistance sensing device;
according to the design method of the operational coefficient x described in the invention, the temperature coefficient-C for the magneto-resistance sensing deviceTA temperature coefficient of C can be obtainedTThe power supply voltage of (2) is applied to the sensor to realize the compensation effect.
Taking a giant magnetoresistance sensing device with a temperature coefficient of-0.25%/° C as an example, the relative deviation of the sensing device at 125 ℃ before compensation is 25%; after compensation, the relative deviation at 125 ℃ is reduced to 6.25 percent
According to the above description, the circuit of the invention has the function of supplying power to the magnetoresistive sensing device, and achieves the effect of compensating for the sensitivity temperature drift of the sensing device.
Claims (3)
1. A power supply circuit with a function of compensating sensitivity temperature drift of a magneto-resistance sensing device is characterized in that:
the temperature detection circuit, the voltage reference irrelevant to temperature, the arithmetic circuit and the linear voltage-stabilized power supply circuit are included;
the temperature detection circuit is used for generating a voltage signal related to the ambient temperature and inputting the voltage signal to one end of the operation circuit;
the voltage reference irrelevant to the temperature is used for generating a voltage signal irrelevant to the temperature and inputting the voltage signal to the other end of the operation circuit;
the input end of the operation circuit is respectively connected to the temperature detection circuit and a voltage reference irrelevant to temperature and used for generating two voltage signals after voltage operation;
the linear voltage-stabilized power supply circuit is provided with a reference signal input end, and the voltage of the output end of the linear voltage-stabilized power supply circuit is in direct proportion to the voltage of the reference signal;
the output of the linear voltage-stabilized power supply circuit provides power supply voltage for the magneto-resistance sensing device;
the magnetic resistance sensing device is prepared based on one of giant magnetic resistance effect, anisotropic magnetic resistance effect or tunneling magnetic resistance effect and has a Wheatstone bridge structure;
the magneto-resistance sensing device is used for a magnetic field B and a power supply voltage VDDOf output voltage V thereofoutThe following functional relationship exists with the sensitivity S and the temperature T:
wherein S is0Is the sensitivity of the magnetoresistive sensing device at 25 ℃;
CTis the temperature coefficient of the sensitivity of the magnetoresistive sensing device;
the voltage signal V after operation output by the operation circuitcWith the voltage signal V output by the temperature detection circuitaAnd a temperature independent voltage reference output voltage signal VbThe following functional relationship exists:
wherein x is an operation coefficient and is determined by a designed operation circuit;
voltage signal V to be correlated with ambient temperatureaSubstituting a relation function with the ambient temperature T:
wherein the voltage signal V related to the ambient temperature generated by the temperature detection circuitaWith the ambient temperature T, the following functional relationship exists:
wherein, Va0Is the output voltage of the temperature detection circuit at 25 ℃;
C' Ta temperature coefficient of an output voltage for the temperature detection circuit;
after finishing, the following relation can be obtained:
when the operation coefficient x of the operation circuit is designed to satisfy equation (1), the output voltage V of the linear stabilized power supplycalWith temperature T, there is a functional relationship as follows:
wherein, the output voltage V of the linear voltage-stabilized power supply circuitcalOutput voltage signal V of AND operation circuitcThe following functional relationship exists:
wherein y is a proportionality coefficient of the output voltage of the linear stabilized voltage supply relative to the input voltage of the reference signal, Vcal0Represents the output voltage of the linear stabilized power supply circuit at 25 ℃;
when the power supply circuit is applied to the magnetoresistive sensing device, the output signal of the magnetoresistive sensing device becomes, for a magnetic field B:
2. the power supply circuit with the sensitivity temperature drift compensation function of the magnetoresistive sensing device as claimed in claim 1, wherein:
the temperature detection mode of the temperature detection circuit is based on one or a combination of several principles of a semiconductor PN junction, a negative temperature coefficient resistor and a thermocouple.
3. The power supply circuit with the sensitivity temperature drift compensation function of the magnetoresistive sensing device as claimed in claim 1, wherein:
the arithmetic circuit can ensure that the temperature coefficient C of the sensitivity of the magneto-resistance sensing device is realized through reasonably designing the arithmetic coefficient xTTemperature coefficient C of output voltage of temperature detection circuit' TThe following relationship is satisfied:
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| CN111506148B true CN111506148B (en) | 2021-06-25 |
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| JP4587708B2 (en) * | 2004-05-20 | 2010-11-24 | コニカミノルタオプト株式会社 | Position detection device, camera shake correction mechanism, and imaging device |
| CN206038743U (en) * | 2016-08-05 | 2017-03-22 | 江苏多维科技有限公司 | Single -chip magneto resistor current sensor |
| CN110376397B (en) * | 2019-08-15 | 2021-04-16 | 杭州电子科技大学 | High-precision fast speed measuring circuit of single-phase asynchronous alternating-current speed measuring generator |
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| CN101086450A (en) * | 2006-06-08 | 2007-12-12 | 敦赞有限公司 | Pace meter using magnetic sensor and measuring method |
| CN203824695U (en) * | 2014-03-26 | 2014-09-10 | 南京信息工程大学 | Apparatus for inhibiting sensitivity thermal drift and noise of silicon nanowire giant piezoresistive sensor |
| CN107014401A (en) * | 2016-11-18 | 2017-08-04 | 清华四川能源互联网研究院 | A kind of magnetoresistive transducer temperature compensation means |
| CN109579880A (en) * | 2018-12-26 | 2019-04-05 | 上海英威腾工业技术有限公司 | Magnetic coder with adaptive equalization function |
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