CN202307918U - Solar silicon wafer textured structure - Google Patents
Solar silicon wafer textured structure Download PDFInfo
- Publication number
- CN202307918U CN202307918U CN 201120425273 CN201120425273U CN202307918U CN 202307918 U CN202307918 U CN 202307918U CN 201120425273 CN201120425273 CN 201120425273 CN 201120425273 U CN201120425273 U CN 201120425273U CN 202307918 U CN202307918 U CN 202307918U
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- China
- Prior art keywords
- silicon wafer
- solar silicon
- rectangular pyramid
- solar
- utility
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model discloses a solar silicon wafer textured structure, which comprises a silicon wafer body, and is characterized in that: rectangular pyramid textured surfaces are uniformly distributed on the surface of the silicon wafer body; and the pyramid heights of the rectangular pyramid textured surfaces are between two thirds and one third of the length of a bottom edge. Due to the adoption of the solar silicon wafer textured structure obtained in the utility model, the surface light reflection can be lowered to the maximum extent, and cleaning is easy.
Description
Technical field
The utility model relates to a kind of technical field of solar batteries, particularly the solar silicon wafers suede structure.
Background technology
The energy is the basis that human society advances, and environment is the necessary condition of human kind sustainable development.Solar energy power generating more and more causes people's attention as a kind of important clean energy resource.In recent years, the output of solar cell is with unprecedented speed increment, and wherein polysilicon solar cell has occupied most share.It is various informative for existing solar energy silicon crystal chip suede structure, and reflectivity is usually 4～6%, and reflected intensity is less, and the suede structure shape is complicated, and is high to manufacturing technique requirent, and is difficult for cleaning.
The utility model content
The purpose of the utility model is to provide a kind of can reduce surface light reflection and solar silicon wafers suede structure easy to clean to greatest extent for the deficiency that solves above-mentioned prior art.
To achieve these goals; The solar silicon wafers suede structure that the utility model designed; Comprise wafer bulk, it is characterized in that the surperficial evenly distributed rectangular pyramid matte that is furnished with of wafer bulk, the pyramid heights of rectangular pyramid matte bottom side length 2/3rds to 1/3rd between.This matte that is rectangular pyramid has increased the incidence angle of sunlight, has reduced surface reflection intensity thus, and because its pyramid heights is low, is easy to the cleaning after long-term the use.
The solar silicon wafers suede structure simple shape that the utility model obtains, production technology is relatively low, and easy to clean.
Description of drawings
Fig. 1 is the overall structure sketch map of embodiment.
Among the figure: wafer bulk 1, rectangular pyramid matte 2.
Embodiment
Below in conjunction with accompanying drawing and embodiment the utility model is further specified.
Embodiment 1:
Solar silicon wafers suede structure as shown in Figure 1, that this enforcement row provide comprises wafer bulk 1, the surperficial evenly distributed rectangular pyramid matte 2 that is furnished with of wafer bulk 1, and the pyramid heights of rectangular pyramid matte 2 is 2/3rds of bottom side lengths.The solar silicon wafers suede structure that the utility model provides can form the mask layer of ps particle on silicon chip: carry out plasma etching method again the silicon chip that has mask layer is carried out etching; Form the matte of desired structure; This method is a known technology, does not describe in detail at this.
Embodiment 2:
The solar silicon wafers suede structure that this enforcement row provide comprises wafer bulk 1, the surperficial evenly distributed rectangular pyramid matte 2 that is furnished with of wafer bulk 1, and the pyramid heights of rectangular pyramid matte 2 is 1/3rd of bottom side lengths.Its implementation such as embodiment 1 through the control of article on plasma etching, realize concrete suede structure.
Claims (1)
1. a solar silicon wafers suede structure comprises wafer bulk (1), it is characterized in that the surperficial evenly distributed rectangular pyramid matte (2) that is furnished with of wafer bulk (1), the pyramid heights of rectangular pyramid matte (2) bottom side length 2/3rds to 1/3rd between.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120425273 CN202307918U (en) | 2011-11-01 | 2011-11-01 | Solar silicon wafer textured structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120425273 CN202307918U (en) | 2011-11-01 | 2011-11-01 | Solar silicon wafer textured structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202307918U true CN202307918U (en) | 2012-07-04 |
Family
ID=46376755
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120425273 Expired - Fee Related CN202307918U (en) | 2011-11-01 | 2011-11-01 | Solar silicon wafer textured structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202307918U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102403375A (en) * | 2011-11-01 | 2012-04-04 | 宁波市鑫友光伏有限公司 | Solar silicon wafer texture structure and texture etching method thereof |
| CN111599877A (en) * | 2019-05-29 | 2020-08-28 | 电子科技大学 | Super-surface light trapping structure for solar cell and preparation method thereof |
-
2011
- 2011-11-01 CN CN 201120425273 patent/CN202307918U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102403375A (en) * | 2011-11-01 | 2012-04-04 | 宁波市鑫友光伏有限公司 | Solar silicon wafer texture structure and texture etching method thereof |
| CN111599877A (en) * | 2019-05-29 | 2020-08-28 | 电子科技大学 | Super-surface light trapping structure for solar cell and preparation method thereof |
| CN111599877B (en) * | 2019-05-29 | 2022-03-11 | 电子科技大学 | All-dielectric super-surface light trapping structure for solar cell and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120704 Termination date: 20121101 |