CN202297759U - Magnetron sputtering near distance intermediate frequency twin targets - Google Patents

Magnetron sputtering near distance intermediate frequency twin targets Download PDF

Info

Publication number
CN202297759U
CN202297759U CN201120415931XU CN201120415931U CN202297759U CN 202297759 U CN202297759 U CN 202297759U CN 201120415931X U CN201120415931X U CN 201120415931XU CN 201120415931 U CN201120415931 U CN 201120415931U CN 202297759 U CN202297759 U CN 202297759U
Authority
CN
China
Prior art keywords
magnetron sputtering
block
intermediate frequency
magnetic field
negative electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201120415931XU
Other languages
Chinese (zh)
Inventor
邹定嵩
周学卿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DONGGUAN RUNHUA OPTOELECTRONICS CO LTD
Original Assignee
DONGGUAN RUNHUA OPTOELECTRONICS CO LTD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by DONGGUAN RUNHUA OPTOELECTRONICS CO LTD filed Critical DONGGUAN RUNHUA OPTOELECTRONICS CO LTD
Priority to CN201120415931XU priority Critical patent/CN202297759U/en
Application granted granted Critical
Publication of CN202297759U publication Critical patent/CN202297759U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Physical Vapour Deposition (AREA)

Abstract

The utility model discloses magnetron sputtering near distance intermediate frequency twin targets. The magnetron sputtering near distance intermediate frequency twin targets mainly comprise a target gate, negative electrode seats, sealing rings, a cooling water channel, magnetic field connecting blocks, magnetic field fixing blocks, periphery fixing blocks, middle fixing blocks and retaining screws. The magnetron sputtering near distance intermediate frequency twin targets are characterized in that the negative electrode seats are arranged on the target gate, the sealing rings are embedded at the peripheries of the negative electrode seats, the cooling water channel is arranged between the negative electrode seats, the magnetic field connecting blocks and the magnetic field fixing blocks are arranged on the negative electrode seats, the periphery fixing blocks are fixedly connected with the target gate, the negative electrode seats and the middle fixing blocks, and the retaining screws are connected with the two negative electrode seats. Due to adoption of the structure in the utility model, the periphery fixing blocks and the middle fixing blocks are directly used for fixing the twin targets, and the distance between the twin targets is reduced, the widths of the negative electrode seats are increased under the condition that the size of a box body is not changed, and therefore, the sputtering area can be increased, the efficiency of magnetron sputtering is improved, and the productivity is increased.

Description

A kind of magnetron sputtering is the intermediate frequency twin target closely
Technical field
The utility model relates to vacuum plating medium frequency magnetron sputtering target technology field, and particularly a kind of magnetron sputtering is at a distance of nearer intermediate frequency twin target.
Background technology
Magnetron sputtering target is one of main device in the large-area vacuum filming equipment, needs insulating compound films such as a large amount of deposition oxides, nitride in the modern optical conductive film product, so widespread use intermediate frequency reaction magnetocontrol sputtering technology.In medium frequency reactive sputtering, when added voltage was in negative half period on the target, target surface was by the positive ion sputter; And when positive half cycle, the electronics in the plasma body is accelerated to target surface, the positive charge that has neutralized and accumulated on the target surface, thus suppressed sparking.But under the work field intensity of confirming, frequency is high more, and the time that positive ion is accelerated in the plasma body is short more, and positive electric field is few more from the energy that external electric field absorbs, and the positive ion energy of bombardment target is low more, and the sputter rate of target also reduces.Because the range of frequency of sputtering voltage is in 10 ~ 80KHz scope, therefore be middle RF sputtering again; The middle RF sputtering of using in the vacuum coating film equipment now is usually used in two targets of sputter, is generally two targets side by side, and size is all identical with profile, so these two targets often are called twin target.The twin target installation that in sputtering chamber, suspends; In sputter procedure, two targets had both suppressed sparking periodically in turn as negative electrode and anode; And owing to eliminated the anode extinction tests in the conventional dc reaction magnetocontrol sputtering, thereby make sputter procedure be able to stable carrying out.
For electronic energy is exchanged on the target surface of positive half cycle more fully; Fully with target surface on positive charge; Require the spacing of two twin target position to reduce as much as possible, but because the twin target negative electrode need be installed insulated enclosure cushion rubber and teflon insulation circle separately and between the door, and two negative electrodes also need the auger shell hole to be fixed on the target door; Also water-cooled tube need be installed in the middle of the twin target, so just limit the gap between the twin target.For the distance that reduces between twin target has improved a lot of difficulty requirements.Should be spacing fixing, can well seal again.
The method of fixed negative pole commonly used is around each negative electrode, all to beat the plurality of fixed hole, each hole tighten up a screw fixed negative pole and sealing-ring and teflon insulation circle.
Summary of the invention
The utility model proposes for the shortcoming that overcomes above prior art existence, and the technical problem that it solved provides a kind of less magnetron sputtering intermediate frequency twin target of spacing that can make two target position
For this reason; The utility model provides closely intermediate frequency twin target of a kind of magnetron sputtering; Mainly be that target door, cathode block, sealing-ring, cooling water channel, magnetic field contiguous block, magnetic field fixed block, peripheral fixed block, center fixed piece, retaining screw are arranged, it is characterized in that: on the target door cathode block is housed, sealing-ring in the embedding of cathode block periphery; Cooling water channel is housed between cathode block; Magnetic field contiguous block and magnetic field fixed block are contained on the cathode block, and peripheral fixed block links to each other with the center fixed piece with target door cathode block, and retaining screw links to each other with two cathode blocks.
Said peripheral fixed block is pressed in the cathode block outside, is contained on the target door through retaining screw.
Said peripheral fixed block is that T type piece of stainless steel and T type insulation layer are formed, there is screw hole the centre, and T type insulation layer is below T type piece of stainless steel.
The cathode block inner edge is being pressed at said center fixed piece two ends, is contained on the cooling water channel through retaining screw.
Said center fixed piece is that rectangle piece of stainless steel and rectangle insulation layer are formed, there is screw hole the centre, and the rectangle insulation layer is below the rectangle piece of stainless steel.
Improve one's methods through above, removed the screw of twin target of the prior art both sides fixed negative pole,, reduced the spacing of two twin targets directly with the fixing twin target of peripheral fixed block, center fixed piece.Make twin target middle RF sputtering the time neutralize more easily as the electric charge on the anodic target surface insulation layer as the electronics of negative electrode, eliminated spark phenomenon effectively, sputter procedure can be operated on the working point of setting to all-the-time stable.
The utility model beneficial effect is: under the situation that does not change the casing size, strengthen the width of cathode block, improve the sputter area, improve magnetron sputtering efficient simultaneously, increase production capacity.
Description of drawings
Below in conjunction with accompanying drawing the embodiment of the utility model is done further detailed explanation.
Fig. 1 is the structural representation of magnetron sputtering intermediate frequency twin target in the prior art.
Fig. 2 is the structural representation of the utility model.
Fig. 3 is the structural representation of the utility model periphery fixed block.
Fig. 4 is the structural representation of the utility model center fixed piece.
Among the figure, 1 is that target door, 2 is that cathode block, 3 is that sealing-ring, 4 is that cooling water channel, 5 is that magnetic field contiguous block, 6 is that magnetic field fixed block, 7 is that peripheral fixed block, 8 is that center fixed piece, 9 is that retaining screw, 71 is that T type piece of stainless steel, 72 is that T type insulation layer composition, 73 is that screw hole, 81 is that rectangle piece of stainless steel, 82 is that rectangle insulation layer, 83 is a screw hole.
Embodiment
As shown in Figure 1; Magnetron sputtering intermediate frequency twin target in the prior art; Mainly be that target door 1, cathode block 2, sealing-ring 3, cooling water channel 4, magnetic field contiguous block 5, magnetic field fixed block 6, retaining screw 9 are arranged; Wherein cathode block 2 and sealing-ring 3 fixing meanss are around each cathode block 2, all to beat the plurality of fixed screw hole, be to lean on retaining screw 9 to be fixed in target door 1, have so just increased the sputter area that target surface has been reduced in gap between the twin target simultaneously.
As shown in Figure 2; A kind of magnetron sputtering is the intermediate frequency twin target closely; Mainly be that target door 1, cathode block 2, sealing-ring 3, cooling water channel 4, magnetic field contiguous block 5, magnetic field fixed block 6, peripheral fixed block 7, center fixed piece 8, retaining screw 9 are arranged, it is characterized in that: cathode block 2 is housed on the target door 1, and sealing-ring 3 in cathode block 2 peripheral embeddings; 2 of cathode blocks are equipped with cooling water channel 4; Magnetic field contiguous block 5 is contained on the cathode block 2 with magnetic field fixed block 6, and peripheral fixed block 7 links to each other with target door cathode block 2, and center fixed piece 8 links to each other with two cathode blocks 2.
As shown in Figure 3, said peripheral fixed block 7 is pressed in cathode block 2 outsides, is contained on the target door 1 through retaining screw 9, and it is fixing to utilize screw 9 that cathode block 2 is pushed down from the outside, need not hole and takies the sputter area of target surface.
Said peripheral fixed block 7 is that T type piece of stainless steel 71 is formed with T type insulation layer 72, there is screw hole 73 centre; T type insulation layer 72 is below T type piece of stainless steel 71; Play insulating effect, T type insulation layer 72 uses the insulation plastic cement to be material, and T type structure more utilizes target door 1 limit to install, fix.
As shown in Figure 4, cathode block 2 inner edges are being pressed at said center fixed piece 8 two ends, are contained on the cooling water channel 4 through retaining screw 9.
Said center fixed piece 8 is that rectangle piece of stainless steel 81 is formed with rectangle insulation layer 82, there is screw hole 83 centre, and rectangle insulation layer 82 plays insulating effect below rectangle piece of stainless steel 81, and T type insulation layer 72 uses the insulation plastic cement to be material.
Adopt the utility model structural approach can spacingly fix, can well seal again effectively for to reduce the distance between twin target; Eliminated spark phenomenon effectively; Can under the situation that does not change the casing size, strengthen the width of cathode block, improve magnetron sputtering efficient, increase production capacity.

Claims (5)

1. magnetron sputtering intermediate frequency twin target closely; Mainly be that target door, cathode block, sealing-ring, cooling water channel, magnetic field contiguous block, magnetic field fixed block, peripheral fixed block, center fixed piece, retaining screw are arranged, it is characterized in that: on the target door cathode block is housed, sealing-ring in the embedding of cathode block periphery; Cooling water channel is housed between cathode block; Magnetic field contiguous block and magnetic field fixed block are contained on the cathode block, and peripheral fixed block links to each other with the center fixed piece with target door cathode block, and retaining screw links to each other with two cathode blocks.
2. a kind of magnetron sputtering according to claim 1 is the intermediate frequency twin target closely, it is characterized in that: said peripheral fixed block is pressed in the cathode block outside, is contained on the target door through retaining screw.
3. a kind of magnetron sputtering according to claim 1 is the intermediate frequency twin target closely, it is characterized in that: said peripheral fixed block is that T type piece of stainless steel and T type insulation layer are formed, there is screw hole the centre, and T type insulation layer is below T type piece of stainless steel.
4. a kind of magnetron sputtering according to claim 1 is the intermediate frequency twin target closely, it is characterized in that: the cathode block inner edge is being pressed at said center fixed piece two ends, is contained on the cooling water channel through retaining screw.
5. a kind of magnetron sputtering according to claim 1 is the intermediate frequency twin target closely; It is characterized in that: said center fixed piece is that rectangle piece of stainless steel and rectangle insulation layer are formed, there is screw hole the centre, and the rectangle insulation layer is below the rectangle piece of stainless steel.
CN201120415931XU 2011-10-27 2011-10-27 Magnetron sputtering near distance intermediate frequency twin targets Expired - Fee Related CN202297759U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201120415931XU CN202297759U (en) 2011-10-27 2011-10-27 Magnetron sputtering near distance intermediate frequency twin targets

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201120415931XU CN202297759U (en) 2011-10-27 2011-10-27 Magnetron sputtering near distance intermediate frequency twin targets

Publications (1)

Publication Number Publication Date
CN202297759U true CN202297759U (en) 2012-07-04

Family

ID=46366694

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201120415931XU Expired - Fee Related CN202297759U (en) 2011-10-27 2011-10-27 Magnetron sputtering near distance intermediate frequency twin targets

Country Status (1)

Country Link
CN (1) CN202297759U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111597676A (en) * 2019-02-21 2020-08-28 西门子股份公司 System and method for checking system requirements of an cyber-physical system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111597676A (en) * 2019-02-21 2020-08-28 西门子股份公司 System and method for checking system requirements of an cyber-physical system
CN111597676B (en) * 2019-02-21 2023-05-23 西门子股份公司 System and method for checking system requirements of information physical system

Similar Documents

Publication Publication Date Title
CN101250687A (en) Rectangle plane magnetron sputtering cathode
TW200940735A (en) Reactive sputtering with HIPIMS
KR20060130500A (en) System and method for modulating power signals to control sputtering
US20130092533A1 (en) Sputter deposition apparatus
CN101285172A (en) Rotary magnetron sputtering target
CN104131258A (en) Ion film-plating device and ion film-plating method
CN101775588B (en) Rectangular target with high target utilization ratio
CN101285171A (en) Rotary cylindrical magnetron sputtering target
US9028659B2 (en) Magnetron design for extended target life in radio frequency (RF) plasmas
CN202297759U (en) Magnetron sputtering near distance intermediate frequency twin targets
CN103887133A (en) Magnetic field reinforced type linear large-area ion source
CN204281850U (en) A kind of novel cylinder magnetically controlled DC sputtering target
JP4473852B2 (en) Sputtering apparatus and sputtering method
CN103820759A (en) Method for improving utilization rate of rectangular planar magnetron sputtering cathode target material
CN204281851U (en) A kind of medium frequency magnetron sputtering plated film negative electrode
CN105405545A (en) Insulator and method for improving surface electric strength of insulator
CN1245534C (en) Non-magentic shielding type ferromagnetic target as sputter cathode
CN204162777U (en) A kind of target material assembly
CN204174270U (en) A kind of rectangle plane target structure of direct water-cooling
CN203683652U (en) Magnetron sputtering plating device
JP2004115841A (en) Magnetron sputtering electrode, film deposition system, and film deposition method
CN104213089B (en) Magnetron sputtering apparatus and magnetically controlled sputter method
CN103014639B (en) Sputtering target material and sputtering device
CN201162042Y (en) Rectangle plane magnetron sputtering cathode
CN102418079A (en) Modified magnetron sputtering target part and method thereof

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120704

Termination date: 20171027