CN202268600U - A single longitudinal mode laser coupled by two semiconductor nano wires - Google Patents
A single longitudinal mode laser coupled by two semiconductor nano wires Download PDFInfo
- Publication number
- CN202268600U CN202268600U CN2011203518669U CN201120351866U CN202268600U CN 202268600 U CN202268600 U CN 202268600U CN 2011203518669 U CN2011203518669 U CN 2011203518669U CN 201120351866 U CN201120351866 U CN 201120351866U CN 202268600 U CN202268600 U CN 202268600U
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- nano wire
- longitudinal mode
- single longitudinal
- mode laser
- laser
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Abstract
The utility model discloses a single longitudinal mode laser coupled by two semiconductor nano wires. Micro-nano operation is carried out for a plurality of semiconductor nano wires to form a plurality of X-shaped coupled cavity structures. A plurality of Fabry-Perot resonant cavities are formed in the structures, and a mode selection is realized via the vernier effect of the composite cavities, thereby realizing the single longitudinal mode semiconductor nano wire laser. The single longitudinal mode laser coupled by two semiconductor nano wires is small in size, low in power consumption, simple in structure, stable in performance, easy in adjustment, simple in manufacturing, easy in integration and the like. At present, a single mode laser output which is 734.3nm in wavelength and 0.11nm in full width at half maximum is obtained.
Description
Technical field
The utility model relates to technical fields such as micro optical element, system, optical communication and photonic integrated circuits, relates in particular to the single longitudinal mode laser that many semiconductor lines of a kind of usefulness are coupled to form.
Background technology
The single longitudinal mode laser that is coupled to form with many semiconductor lines is a kind of new laser, is widely used at aspects such as scientific research, industry, environment, has wide application potential and development prospect.Along with semiconductor nanowires preparation technology's improvement, high-quality semiconductor nanowires can prepare, and has been used to make micro-nano photonic propulsion device.Be proved to be like single nano-wire optical resonator and single nano-wire Multi-Longitudinal Mode laser.The nano wire laser of having realized in the world at present mainly contains single nano-wire Multi-Longitudinal Mode laser, single nano-wire annular cavity laser, single nano-wire Bragg grating formula laser.Yet existing these semiconductor nano laser line generators can only move under many longitudinal modes pattern usually; The resonant cavity cavity configuration is comparatively fixing; Be difficult in laser structure to introduce effective modeling mechanism, but and single longitudinal mode is vital for the practical application of semiconductor nano laser line generator.
The utility model content
The purpose of the utility model is the deficiency to prior art, and a kind of single longitudinal mode laser that utilizes many semiconductor nanowires couplings is provided.
The purpose of the utility model realizes through following technical scheme: a kind of single longitudinal mode laser that utilizes two semiconductor nanowires couplings; It is made up of long nano wire and short nano wire; Short nano wire partly is being close to long nano wire near the long nano wire second end points place, forms the single longitudinal mode laser of X-shaped structure; All form FP (Fabry-Perot, Fabry-Perot) chamber between short nano wire first end points and long nano wire second end points and between short nano wire first end points and short nano wire second end points, and the long coupling in chamber, two FP chambeies.
The beneficial effect that the utlity model has is: use the many semiconductor nano laser line generators that the method for the utility model prepares and have: single longitudinal mode, miniaturization, simple in structure, stable performance, be easy to regulate, preparation is easy, be easy to characteristics such as integrated.Wavelength 734.3 nm have been obtained at present, the single-mode laser output of halfwidth 0.11nm.
Description of drawings
Fig. 1 is the structural principle sketch map of the utility model;
Fig. 2 (a) is the laser light spectrogram of single nano-wire, and Fig. 2 (b) is the laser light spectrogram of the utility model;
Among the figure, long nano wire first end points 1, long nano wire second end points 2, short nano wire first end points 3, short nano wire second end points 4.
Embodiment
When having a plurality of resonant cavity in the coupled structure of many nano wires, a plurality of cavitys can be realized modeling through cursor effect.Under the pumping of extraneous laser, have only the pattern of the condition of resonance that satisfies all chambeies simultaneously to amplify, from the termination outgoing of nano wire at the nano wire interior resonance.Can realize the tuning of single mode output and outgoing wavelength through the physical dimension of regulating coupled zone and Perimeter Truss Reflector.
The utility model utilizes the preparation method of the single longitudinal mode laser of many semiconductor nanowires couplings, comprises the steps:
1, at first prepares the high-quality semiconductor nanowires of diameter 50-1000 nm through chemical gaseous phase depositing process.
2, utilize two optical fiber probes that the diameter on the growth substrate is divided into two for the nano wire of 50-1000nm cuts off at microscopically: long long nano wire and one is the short nano wire of weak point, and two nano wires are placed on the low-refraction substrate.
3, carry out micro-nano operation with optical fiber probe, push short nano wire one end of longer nano wire to, promptly long nano wire second end points 2 partly is close to long nano wire and short nano wire, the single longitudinal mode laser of formation X-shaped structure; All form FP (Fabry-Perot between short nano wire first end points 3 and long nano wire second end points 2 and between short nano wire first end points 3 and short nano wire second end points 4; Fabry-Perot) chamber; And the long coupling in chamber, two FP chambeies just can realize the selection of single-mode laser.
And semiconductor nanowires self is exported through the laser of cursor effect modeling realization single mode under optical pumping as gain media.
Describe the utility model in detail according to accompanying drawing and embodiment below, it is more obvious that purpose of the utility model and effect will become.
Embodiment
Use chemical vapour deposition technique to grow the CdSe nano wire of diameter 420nm, under light microscope the use optical fiber probe with one long be that the nano wire of 560 μ m is transferred to MgF
2On the substrate.Utilize optical fiber probe to being placed on MgF again
2CdSe on the substrate cuts, and forms two sections: a segment length 470 nm, another segment length is 89 nm.With optical fiber probe nano wire is carried out the micro-nano operation then, will push long end to, the part of two nano wires is close to, form the X-shaped structure than short nano wire.The length of being close to the zone is about 6 μ m.Pulsed light at wavelength 532 nm excites down, and flashlight is collected in the spectrometer by object lens.Accompanying drawing 1 is the structural principle sketch map of the utility model; Fig. 2 (b) is the laser spectroscopy of the utility model; Visible from figure; With respect to the laser spectroscopy of not making the solid wire laser of X-shaped structure among Fig. 2 (a), the resonant cavity of making the laser of X structure can play good modeling effect, has obtained wavelength 734.3 nm behind the modeling; Pulsewidth is the laser main peak of 0.11 nm, and side mode suppression ratio is 14.6.
Though among this embodiment, the diameter of nano wire is 420nm, long nanowire length is 470 nm, and short nanowire length is 89 nm; But, experiment showed, for the nano wire of arbitrary diameter, and the long coupling in chamber, two FP chambeies at 50-1000nm, just can realize the purpose of the utility model, have aforesaid effect.
Above-mentioned embodiment is used for the utility model of explaining; Rather than the utility model limited; In the protection range of the spirit of the utility model and claim,, all fall into the protection range of the utility model to any modification and the change that the utility model is made.
Claims (1)
1. a single longitudinal mode laser that utilizes two semiconductor nanowires couplings is characterized in that, it is made up of long nano wire and short nano wire; Short nano wire is locating partly to be close to the single longitudinal mode laser of formation X-shaped structure with long nano wire near long nano wire second end points (2); Equal forming method Fabry-Perot-type cavity between short nano wire first end points (3) and long nano wire second end points (2) and between short nano wire first end points (3) and short nano wire second end points (4), and two Fabry-Perot-type cavity chamber length are mated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203518669U CN202268600U (en) | 2011-09-20 | 2011-09-20 | A single longitudinal mode laser coupled by two semiconductor nano wires |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203518669U CN202268600U (en) | 2011-09-20 | 2011-09-20 | A single longitudinal mode laser coupled by two semiconductor nano wires |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202268600U true CN202268600U (en) | 2012-06-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011203518669U Expired - Fee Related CN202268600U (en) | 2011-09-20 | 2011-09-20 | A single longitudinal mode laser coupled by two semiconductor nano wires |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202268600U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102412503A (en) * | 2011-09-20 | 2012-04-11 | 浙江大学 | Single-longitudinal-mode laser for coupling by utilizing two semiconductor nano wires and preparation method |
-
2011
- 2011-09-20 CN CN2011203518669U patent/CN202268600U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102412503A (en) * | 2011-09-20 | 2012-04-11 | 浙江大学 | Single-longitudinal-mode laser for coupling by utilizing two semiconductor nano wires and preparation method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120606 Termination date: 20140920 |
|
| EXPY | Termination of patent right or utility model |