CN102412503A - Single-longitudinal-mode laser for coupling by utilizing two semiconductor nano wires and preparation method - Google Patents
Single-longitudinal-mode laser for coupling by utilizing two semiconductor nano wires and preparation method Download PDFInfo
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- CN102412503A CN102412503A CN2011102788947A CN201110278894A CN102412503A CN 102412503 A CN102412503 A CN 102412503A CN 2011102788947 A CN2011102788947 A CN 2011102788947A CN 201110278894 A CN201110278894 A CN 201110278894A CN 102412503 A CN102412503 A CN 102412503A
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Abstract
The invention discloses a single-longitudinal-mode laser for coupling by utilizing two semiconductor nano wires and a preparation method. The preparation method comprises the following steps of: carrying out micronano operation on a plurality of semiconductor nano wires to form a plurality of X-shaped coupling cavity structures; and forming a plurality of Fabry Perot resonance cavities in the structures, realizing mode selection by the cursor effect of composite cavity bodies and realizing the single-longitudinal-mode semiconductor laser. The single-longitudinal-mode laser has the characteristics of miniaturization, low power consumption, simple structure, stable performance, easiness in adjustment, simpleness and convenience in preparation, easy integration and the like. At present, the output of single-mode laser with the wavelength being 734.3nm and the half-height width being 0.11nm is achieved.
Description
Technical field
The present invention relates to technical fields such as micro optical element, system, optical communication and photonic integrated circuits, relate in particular to single longitudinal mode laser and preparation method that many semiconductor lines of a kind of usefulness are coupled to form.
Background technology
The single longitudinal mode laser that is coupled to form with many semiconductor lines is a kind of new laser, is widely used at aspects such as scientific research, industry, environment, has wide application potential and development prospect.Along with semiconductor nanowires preparation technology's improvement, high-quality semiconductor nanowires can prepare, and has been used to make micro-nano photonic propulsion device.Be proved to be like single nano-wire optical resonator and single nano-wire Multi-Longitudinal Mode laser.The nano wire laser of having realized in the world at present mainly contains single nano-wire Multi-Longitudinal Mode laser, single nano-wire annular cavity laser, single nano-wire Bragg grating formula laser.Yet existing these semiconductor nano laser line generators can only move under many longitudinal modes pattern usually; The resonant cavity cavity configuration is comparatively fixing; Be difficult in laser structure to introduce effective modeling mechanism, but and single longitudinal mode is vital for the practical application of semiconductor nano laser line generator.
Summary of the invention
The objective of the invention is to deficiency, a kind of single longitudinal mode laser and preparation method who utilizes many semiconductor nanowires couplings is provided to prior art.
The objective of the invention is to realize: a kind of single longitudinal mode laser that utilizes two semiconductor nanowires couplings through following technical scheme; It is made up of long nano wire and short nano wire; Short nano wire partly is being close to long nano wire near the long nano wire second end points place, forms the single longitudinal mode laser of X-shaped structure; All form FP (Fabry-Perot, Fabry-Perot) chamber between short nano wire first end points and long nano wire second end points and between short nano wire first end points and short nano wire second end points, and the long coupling in chamber, two FP chambeies.
The preparation method of the said single longitudinal mode laser of a kind of claim 1, this method may further comprise the steps:
(1) at first prepares the high-quality semiconductor nanowires of diameter 50-1000 nm through chemical gaseous phase depositing process;
(2) utilize two optical fiber probes that the diameter on the growth substrate is divided into two for the nano wire of 50-1000nm cuts off at microscopically: long long nano wire and one is the short nano wire of weak point, and two nano wires are placed on the low-refraction substrate.
(3) carry out micro-nano operation with optical fiber probe, push short nano wire one end of longer nano wire to, promptly long nano wire second end points partly is close to long nano wire and short nano wire, the single longitudinal mode laser of formation X-shaped structure; All form FP (Fabry-Perot between short nano wire first end points and long nano wire second end points and between short nano wire first end points and short nano wire second end points; Fabry-Perot) chamber; And the long coupling in chamber, two FP chambeies just can realize the selection of single-mode laser.
The beneficial effect that the present invention has is: use the many semiconductor nano laser line generators that method of the present invention prepares and have: single longitudinal mode, miniaturization, simple in structure, stable performance, be easy to regulate, preparation is easy, be easy to characteristics such as integrated.Wavelength 734.3 nm have been obtained at present, the single-mode laser output of halfwidth 0.11nm.
Description of drawings
Fig. 1 is a structural principle sketch map of the present invention;
Fig. 2 (a) is the laser light spectrogram of single nano-wire, and Fig. 2 (b) is a laser light spectrogram of the present invention;
Among the figure, long nano wire first end points 1, long nano wire second end points 2, short nano wire first end points 3, short nano wire second end points 4.
Embodiment
When having a plurality of resonant cavity in the coupled structure of many nano wires, a plurality of cavitys can be realized modeling through cursor effect.Under the pumping of extraneous laser, have only the pattern of the condition of resonance that satisfies all chambeies simultaneously to amplify, from the termination outgoing of nano wire at the nano wire interior resonance.Can realize the tuning of single mode output and outgoing wavelength through the physical dimension of regulating coupled zone and Perimeter Truss Reflector.
The present invention utilizes the preparation method of the single longitudinal mode laser of many semiconductor nanowires couplings, comprises the steps:
1, at first prepares the high-quality semiconductor nanowires of diameter 50-1000 nm through chemical gaseous phase depositing process.
2, utilize two optical fiber probes that the diameter on the growth substrate is divided into two for the nano wire of 50-1000nm cuts off at microscopically: long long nano wire and one is the short nano wire of weak point, and two nano wires are placed on the low-refraction substrate.
3, carry out micro-nano operation with optical fiber probe, push short nano wire one end of longer nano wire to, promptly long nano wire second end points 2 partly is close to long nano wire and short nano wire, the single longitudinal mode laser of formation X-shaped structure; All form FP (Fabry-Perot between short nano wire first end points 3 and long nano wire second end points 2 and between short nano wire first end points 3 and short nano wire second end points 4; Fabry-Perot) chamber; And the long coupling in chamber, two FP chambeies just can realize the selection of single-mode laser.
And semiconductor nanowires self is exported through the laser of cursor effect modeling realization single mode under optical pumping as gain media.
Describe the present invention in detail according to accompanying drawing and embodiment below, it is more obvious that the object of the invention and effect will become.
Embodiment
Use chemical vapour deposition technique to grow the CdSe nano wire of diameter 420nm, under light microscope the use optical fiber probe with one long be that the nano wire of 560 μ m is transferred to MgF
2On the substrate.Utilize optical fiber probe to being placed on MgF again
2CdSe on the substrate cuts, and forms two sections: a segment length 470 nm, another segment length is 89 nm.With optical fiber probe nano wire is carried out the micro-nano operation then, will push long end to, the part of two nano wires is close to, form the X-shaped structure than short nano wire.The length of being close to the zone is about 6 μ m.Pulsed light at wavelength 532 nm excites down, and flashlight is collected in the spectrometer by object lens.Accompanying drawing 1 is a structural principle sketch map of the present invention; Fig. 2 (b) is a laser spectroscopy of the present invention; Visible from figure; With respect to the laser spectroscopy of not making the solid wire laser of X-shaped structure among Fig. 2 (a), the resonant cavity of making the laser of X structure can play good modeling effect, has obtained wavelength 734.3 nm behind the modeling; Pulsewidth is the laser main peak of 0.11 nm, and side mode suppression ratio is 14.6.
Though among this embodiment, the diameter of nano wire is 420nm, long nanowire length is 470 nm, and short nanowire length is 89 nm; But, experiment showed, for the nano wire of arbitrary diameter at 50-1000nm, and the long coupling in chamber, two FP chambeies, just can realize the object of the invention, have aforesaid effect.
Above-mentioned embodiment is used for the present invention that explains, rather than limits the invention, and in the protection range of spirit of the present invention and claim, any modification and change to the present invention makes all fall into protection scope of the present invention.
Claims (2)
1. single longitudinal mode laser that utilizes the coupling of two semiconductor nanowires; It is characterized in that; It is made up of long nano wire and short nano wire, and short nano wire is locating partly to be close to the single longitudinal mode laser of formation X-shaped structure with long nano wire near long nano wire second end points (2); All form FP (Fabry-Perot, Fabry-Perot) chamber between short nano wire first end points (3) and long nano wire second end points (2) and between short nano wire first end points (3) and short nano wire second end points (4), and the long coupling in chamber, two FP chambeies.
2. the preparation method of the said single longitudinal mode laser of claim 1 is characterized in that, this method may further comprise the steps:
(1) at first prepares the high-quality semiconductor nanowires of diameter 50-1000 nm through chemical gaseous phase depositing process;
(2) utilize two optical fiber probes that the diameter on the growth substrate is divided into two for the nano wire of 50-1000nm cuts off at microscopically: long long nano wire and one is the short nano wire of weak point, and two nano wires are placed on the low-refraction substrate;
(3) carry out micro-nano operation with optical fiber probe, push short nano wire one end of longer nano wire to, promptly long nano wire second end points (2) partly is close to long nano wire and short nano wire, the single longitudinal mode laser of formation X-shaped structure; All form FP (Fabry-Perot between short nano wire first end points (3) and long nano wire second end points (2) and between short nano wire first end points (3) and short nano wire second end points (4); Fabry-Perot) chamber; And the long coupling in chamber, two FP chambeies just can realize the selection of single-mode laser.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107394582A (en) * | 2017-07-17 | 2017-11-24 | 浙江大学 | A kind of lateral luminous nanobelt laser of high polarization single mould and preparation method thereof |
| CN110854673A (en) * | 2019-11-15 | 2020-02-28 | 浙江大学 | Composite structure single longitudinal mode laser based on-chip integrated waveguide and semiconductor nanowire |
Citations (8)
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| WO2004010552A1 (en) * | 2002-07-19 | 2004-01-29 | President And Fellows Of Harvard College | Nanoscale coherent optical components |
| WO2005114282A2 (en) * | 2004-05-13 | 2005-12-01 | The Regents Of The University Of California | Nanowires and nanoribbons as subwavelength optical waveguides and their use as components in photonic circuits and devices |
| JP2009049282A (en) * | 2007-08-22 | 2009-03-05 | Nippon Telegr & Teleph Corp <Ntt> | Nanolaser structure and method of fabricating nanonlaser structure |
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| CN101714742A (en) * | 2009-11-19 | 2010-05-26 | 浙江大学 | Multi-wavelength semiconductor nanowire and micro-optical fiber composite structure micro laser |
| CN101902013A (en) * | 2010-07-13 | 2010-12-01 | 浙江大学 | Semiconductor nanoribbon-based annular cavity laser |
| CN102157902A (en) * | 2011-02-14 | 2011-08-17 | 浙江大学 | Tunable single longitudinal mode laser based on single semiconductor nanowire and preparation method thereof |
| CN202268600U (en) * | 2011-09-20 | 2012-06-06 | 浙江大学 | A single longitudinal mode laser coupled by two semiconductor nano wires |
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2011
- 2011-09-20 CN CN2011102788947A patent/CN102412503A/en active Pending
Patent Citations (8)
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|---|---|---|---|---|
| WO2004010552A1 (en) * | 2002-07-19 | 2004-01-29 | President And Fellows Of Harvard College | Nanoscale coherent optical components |
| WO2005114282A2 (en) * | 2004-05-13 | 2005-12-01 | The Regents Of The University Of California | Nanowires and nanoribbons as subwavelength optical waveguides and their use as components in photonic circuits and devices |
| JP2009049282A (en) * | 2007-08-22 | 2009-03-05 | Nippon Telegr & Teleph Corp <Ntt> | Nanolaser structure and method of fabricating nanonlaser structure |
| CN101453096A (en) * | 2008-12-29 | 2009-06-10 | 浙江大学 | Semiconductor nano wire and micro optical fiber composite structure micro laser |
| CN101714742A (en) * | 2009-11-19 | 2010-05-26 | 浙江大学 | Multi-wavelength semiconductor nanowire and micro-optical fiber composite structure micro laser |
| CN101902013A (en) * | 2010-07-13 | 2010-12-01 | 浙江大学 | Semiconductor nanoribbon-based annular cavity laser |
| CN102157902A (en) * | 2011-02-14 | 2011-08-17 | 浙江大学 | Tunable single longitudinal mode laser based on single semiconductor nanowire and preparation method thereof |
| CN202268600U (en) * | 2011-09-20 | 2012-06-06 | 浙江大学 | A single longitudinal mode laser coupled by two semiconductor nano wires |
Non-Patent Citations (1)
| Title |
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| YAO XIAO等: "Single mode lasing in coupled nanowires", 《APPLIED PHYSICS LETTERS》, vol. 99, 14 July 2011 (2011-07-14), XP012141422, DOI: doi:10.1063/1.3610965 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107394582A (en) * | 2017-07-17 | 2017-11-24 | 浙江大学 | A kind of lateral luminous nanobelt laser of high polarization single mould and preparation method thereof |
| CN110854673A (en) * | 2019-11-15 | 2020-02-28 | 浙江大学 | Composite structure single longitudinal mode laser based on-chip integrated waveguide and semiconductor nanowire |
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Application publication date: 20120411 |