CN202205728U

CN202205728U - Sulfur resisting structure for electronic component

Info

Publication number: CN202205728U
Application number: CN2011202311736U
Authority: CN
Inventors: 江财宝; 曹茂松
Original assignee: DAYI SCIENCE-TECHNOLOGY Co Ltd
Current assignee: DAYI SCIENCE-TECHNOLOGY Co Ltd; TA I Tech Co Ltd
Priority date: 2011-06-30
Filing date: 2011-06-30
Publication date: 2012-04-25
Anticipated expiration: 2021-06-30

Abstract

A sulfur resisting structure for an electronic component adopts the structure that back-electrodes are arranged at two ends of the bottom surface of a substrate; a conducting layer is covered at two ends of the upper part of the substrate respectively; a functional component is arranged between the two conducting layers; a first protective layer is covered on the functional component; sulfur resisting layers are arranged on the partial surfaces of the two conducting layers; and a second protective layer covers the functional component and the partial sulfur resisting layers. Therefore, the anti-sulfur performance of the electronic component is enhanced.

Description

The anti-sulfuration structure of electronic building brick

Technical field

The utility model is meant especially that relevant for a kind of anti-sulfuration structure of electronic building brick the anti-sulfurization that electronic building brick is provided can be more certain.

Background technology

The chip-resistance of commonly seeing; The down either side and the top that lie in ceramic substrate are printed with an electrode respectively, on the surface of substrate, republish a resistance, make the two ends of resistance be connected to the local surfaces of electrode respectively; Constitute conducting, the upper end face of resistance then covers with a protective layer.

And; Because this is formed on the electrode on the substrate; The much more general elargol materials that adopt because the metallic character of silver makes it become silver sulfide with sulfide chemical combination of external environment easily, cause electrode receiving sulfuration erosion following time; Cause electrode function to reduce, and then influence the reliable quality of integral core sheet resistor.

The utility model content

Therefore, this creation aims to provide a kind of anti-sulfuration structure of electronic building brick, is to make the electric function assembly that is arranged on the substrate, can be by covering protection safely, and can avoid really contacting with the sulfide of external environment condition.

Resisting of electronic building brick according to this creation vulcanized structure; Further tie up to the top of electric function assemblies such as resistance, inductance, electric capacity, fuse, protection assembly or sensing component, except being provided with first protective layer, be provided with the anti-sulphur layer of the anti-sulphur effect of tool again; And; Be provided with in order to the first protective layer contact interface is covered second protective layer that covers fully, promote anti-sulphur effect thus, be a time purpose of this creation.

A kind of anti-sulfuration structure of electronic building brick is provided for this this creation; It is characterized in that: include a substrate; The two ends, bottom surface of substrate are respectively equipped with a backplate; Two ends, surface, the top of substrate be covered respectively a conductive layer and lateral electrode protective layer are provided with one repeatedly in the electric function assembly of conductive layer upper end between two conductive layers; Be provided with two anti-sulphur layers again, lid covers the top, part to two conductive layers respectively; And being provided with one can be with the electric function assembly, and with electric function assembly and the anti-sulphur layer protective layer that the interface covers fully that contacts.

For just your juror has further understanding and understanding to purpose, shape, constructing apparatus characteristic and the effect thereof of this creation, lift embodiment now and cooperate graphicly, specify as follows:

Description of drawings

Fig. 1 is the whole profile of this creation.

Fig. 2 A～2I is the making flow process floor map of this creation.

Fig. 3 A～3I for cooperate above-mentioned Fig. 2 A～2I in the vertical section of relative position sketch map.

1: substrate

4: the electric function assembly

5: the first protective layers

7: the second protective layers

21,22: backplate

30: the lateral electrode protective layer

31,32: conductive layer

61,62: anti-sulphur layer

11: front side edge

12: back side edge

13,14: side

51,52,53: screen

Embodiment

The anti-sulfuration structure of the electronic building brick of this creation, as shown in Figure 1, include:

One substrate 1; Substrate 1 can be selected ceramic substrate, aluminium nitride substrate, silicon substrate or glass substrate for use; The two ends, bottom surface of substrate 1 are respectively equipped with a

backplate

21,22; Two ends, surface, the top of substrate 1

conductive layer

31,32 that is covered respectively,

conductive layer

31,32 can be selected elargol, palladium-silver, electro-coppering, copper alloy or palldium alloy for use;

The both sides of the substrate 1 lateral electrode protective layer 30 that respectively is covered again;

One electric function assembly 4, be stack on two conductive layers 31, between 32, this electric function assembly 4 can be resistance, inductance, electric capacity, fuse, protection assembly or sensing component; The top of electric function assembly 4 first protective layer 5 that is covered;

Two

anti-sulphur layers

61,62; The top, part to

conductive layer

31,32 is covered in system's lid respectively, and this

anti-sulphur layer

61,62 can be selected palladium or palldium alloy (Pd/Pd alloy), gold or billon (Au/Au alloy), chromium or evanohm (Cr/Cr alloy), nickel or nickel alloy (Ni/Ni alloy), titanium or titanium alloy (Ti/Ti alloy) for use; And

One second protective layer 7 is the top in order to covering to first protective layer 5, and first protective layer 5 and two anti-sulphur layers, 61,62 contacted interface are covered.

By the structure of above-mentioned multilayer protection, the anti-cure efficiency of electronic building brick can significantly promote, and can effectively avoid the electric function assembly to be influenced its reliable in quality degree because electrode is vulcanized.

The anti-sulfuration structure of the electronic building brick of relevant this creation, its manufacturing process cooperates graphic explanation following now:

1. the scope that the backplate that is covered respectively at the two ends, bottom surface of substrate 1 earlier 21,22, two

backplates

21,22 cover and (or not reaching) are in front side edge 11, back side edge 12 and the dual-side 13,14 (shown in Fig. 2 A, 3A) of substrate 1;

2. the scope that a

conductive layer

31,32, two

conductive layers

31,32 that are covered respectively in the two ends, surface, top of substrate 1 again cover does not reach (or reaching) in front side edge 11, the back side edge 12 of substrate 1, and reaches in the dual-side 13,14 (shown in Fig. 2 B, 3B) of substrate 1;

3. the lateral electrode protective layer 30 that respectively is covered in the both sides of substrate 1, this lateral electrode protective layer 30 coats top, substrate side and the backplate 21,22 (shown in Fig. 2 C, 3C) of local

conductive layer

31,32;

At two conductive layers 31, an electric function assembly 4 is set between 32, this electric function assembly 4 can be resistance, inductance, electric capacity, fuse, protection assembly or sensing component; Electric function assembly 4 is the top (shown in Fig. 2 D, 3D) that stacks on the local surfaces of two

conductive layers

31,32;

Above electric function assembly 4 lining first protective layer 5, this first protective layer 5 is mainly electric function component protection layer (shown in Fig. 2 E, 3E);

6.

number radome

51,52,53 more than forming with resin or other polymeric material utilizes interval mode to cover the top of the

conductive layer

31,32 and first protective layer 5 respectively; Wherein,

radome

51,52 only covers the position of covering local

conductive layer

31,32 and substrate-side end in contact; Radome 53 then is than large tracts of land, and then cover covers first protective layer 5 (shown in Fig. 2 F, 3F) fully;

7. then, above substrate 1, at the position that conductively-closed

cover

51,52,53 covers not cover, the

anti-sulphur layer

61,62 that is covered makes

anti-sulphur layer

61,62 lid cover above part of two conductive layers 31,32 (shown in Fig. 2 G, 3G);

8. with chemical liquid or

solvent radome

51,52,53 is removed fully again, manifested the position of

conductive layer

31,32 and substrate-side end in contact, and first protective layer 5 (shown in Fig. 2 H, 3H);

9. last, with one second protective layer 7 first protective layer, 5, the first protective layers 5 that will appear and the position that

conductive layer

31,32 contacts, cover fully and cover (shown in Fig. 2 I, 3I).

The anti-sulfuration structure of the electronic building brick of above-mentioned creation, it may be implemented in single stand-alone assembly, perhaps, also can be implemented on the array assembly earlier, and then be cut into single stand-alone assembly.

Again, the anti-sulfuration structure of the electronic building brick of above-mentioned creation, its

conductive layer

31,32 can be overlayed on the right ends on surface on the substrate 1, perhaps, also can be overlayed on the two ends up and down on its surface, conductive layer 31, stacks electric function assembly 4 between 32 again.

In sum, the anti-sulfuration structure of the electronic building brick of this creation has the effect of novelty and progressive really, and it is not seen in public use, closes the regulation in Patent Law, earnestly asks the gift quasi patent, real be moral just.

Need Chen Mingzhe, the above is that this creates preferable concrete embodiment, when the change that the conception of Ruo Yiben creation is done, the function of its generation do not exceed specification yet and illustrate the spirit that is contained, all should in the scope of this creation, close and give Chen Ming.

Claims

1. the anti-sulfuration of an electronic building brick is constructed; It is characterized in that: include a substrate; The two ends, bottom surface of substrate are respectively equipped with a backplate; Two ends, surface, the top of substrate be covered respectively a conductive layer and lateral electrode protective layer are provided with one repeatedly in the electric function assembly of conductive layer upper end between two conductive layers; Be provided with two anti-sulphur layers again, lid covers the top, part to two conductive layers respectively; And being provided with one can be with the electric function assembly, and with electric function assembly and the anti-sulphur layer protective layer that the interface covers fully that contacts.

2. the anti-sulfuration structure of electronic building brick as claimed in claim 1, it is characterized in that: wherein said substrate can be selected ceramic substrate, aluminium nitride substrate, silicon substrate or glass substrate for use.

3. the anti-sulfuration structure of electronic building brick as claimed in claim 1, it is characterized in that: the material of wherein said anti-sulphur layer can be palladium or palldium alloy, gold or billon, chromium or evanohm, nickel or nickel alloy, titanium or titanium alloy.

4. like the anti-sulfuration structure of claim 1,2 or 3 described electronic building bricks, it is characterized in that: wherein said electric function assembly can be resistance, inductance, electric capacity, fuse, protection assembly or sensing component.

5. the anti-sulfuration structure of electronic building brick as claimed in claim 4, it is characterized in that: the top of wherein said electric function assembly is provided with an electric function component protection layer.

6. the anti-sulfuration structure of electronic building brick as claimed in claim 5 is characterized in that: wherein said conductive layer can be overlayed on the right ends of substrate surface and/or two ends up and down.