CN202167493U - A structure for reducing the transverse diffusion width in communication isolation and diffusion - Google Patents
A structure for reducing the transverse diffusion width in communication isolation and diffusion Download PDFInfo
- Publication number
- CN202167493U CN202167493U CN2011202703709U CN201120270370U CN202167493U CN 202167493 U CN202167493 U CN 202167493U CN 2011202703709 U CN2011202703709 U CN 2011202703709U CN 201120270370 U CN201120270370 U CN 201120270370U CN 202167493 U CN202167493 U CN 202167493U
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- diffusion
- width
- isolation diffusion
- communication isolation
- horizontal proliferation
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Abstract
The utility model relates to a structure for reducing the transverse diffusion width in communication isolation and diffusion, which is characterized by comprising an annular groove for inhibiting transverse diffusion, a front communication isolation and diffusion region and a back communication isolation and diffusion region, wherein the inner side of the front communication isolation and diffusion region is provided with an annular groove for inhibiting transverse diffusion, and one side of the annular groove for inhibiting transverse diffusion is provided with an annular passivating groove. In the utility model, the advantages are provided as following: by employing the annular groove for inhibiting transverse diffusion, the transverse diffusion width in the communication isolation and diffusion process is reduced; the influence of the transverse diffusion width on the VRRM voltage characteristic is effectively reduced; the breakdown voltage and the product yield rate are increased; and the structure is employed that the width of the front communication isolation and diffusion region is narrow, and the width of the back communication isolation and diffusion region is wide, the back communication isolation and diffusion speed is enhanced, and the diffusion time is reduced by 15 to 20 hours.
Description
Technical field
The utility model relates to the structure of a kind of reduction to logical isolation diffusion horizontal proliferation width.
Background technology
Logical isolation diffusion technology is widely used in the production of semiconductor device, especially in the actual production process of products such as controllable silicon, the quality of logical isolation diffusion processing quality is directly had influence on the V of product
RRMVoltage characteristic, main cause are long to the logical isolation diffusion technical process time, and temperature is high, causes the horizontal proliferation width big, thereby causes V
RRMVoltage is low or puncture softly, and for addressing the above problem, the spy provides a kind of new technical scheme.
The utility model content
The purpose of the utility model provides the structure of a kind of reduction to logical isolation diffusion horizontal proliferation width.
The technical scheme that the utility model adopts is:
A kind of structure that reduces logical isolation diffusion horizontal proliferation width; Comprise and suppress horizontal proliferation with cannelure, just in the face of leading to the isolation diffusion district and the back side to logical isolation diffusion district; Saidly just suppress horizontal proliferation and use cannelure in the face of inboard, logical isolation diffusion district is provided with, said inhibition horizontal proliferation is provided with annular deactivation slot with cannelure one side.
The said back side is 120-160um to logical isolation diffusion district ring width, and just in the face of logical isolation diffusion district ring width is 60-100um, said inhibition horizontal proliferation uses the cannelure width to be 20-60um, and the degree of depth is 30-40um.
The utility model has the advantages that: adopted and suppressed the mode of horizontal proliferation, reduced the horizontal proliferation width that forms in the logical isolation diffusion process, effectively reduced the horizontal proliferation width V with cannelure
RRMThe influence of voltage characteristic has improved puncture voltage and product yield; Adopt just narrow, the back side to the logical wide structure of isolation diffusion district ring width simultaneously, improved, reduced 15-20h diffusion time than originally back to logical isolation diffusion speed in the face of logical isolation diffusion district ring width.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the utility model is described in further detail.
The product front transversary sketch map that Fig. 1 forms for the utility model mode.
The product back side transversary sketch map that Fig. 2 forms for the utility model mode.
The product vertical structure sketch map that Fig. 3 forms for the utility model mode.
Wherein: 1, ring glass deactivation slot, 2, just in the face of logical isolation diffusion district, 3, suppress horizontal proliferation and use cannelure, 4, the back side is to leading to the isolation diffusion district.
Embodiment
Shown in Fig. 1-3; A kind of structure that reduces logical isolation diffusion horizontal proliferation width of the utility model comprises and suppresses horizontal proliferation with cannelure 3, just in the face of leading to the isolation diffusion district 2 and the back side to logical isolation diffusion district 4, just suppresses horizontal proliferation with cannelure 3 in the face of 2 inboards, logical isolation diffusion district are provided with; Suppress horizontal proliferation and be provided with annular deactivation slot 1 with cannelure 3 one sides; Suppress horizontal proliferation and use cannelure 3 width to be 20-60um, the degree of depth is 30-40um, and the back side is 120-160um to logical isolation diffusion district 4 ring widthes; Be 60-100um just in the face of logical isolation diffusion district ring width; Adopted and suppressed the mode of horizontal proliferation, reduced the horizontal proliferation width that forms in the logical isolation diffusion process, effectively reduced the horizontal proliferation width V with cannelure
RRMThe influence of voltage characteristic has improved puncture voltage and product yield; Adopt just narrow, the back side to the logical wide structure of isolation diffusion district ring width simultaneously, improved, reduced 15-20h diffusion time than originally back to logical isolation diffusion speed in the face of logical isolation diffusion district ring width.
Claims (2)
1. a reduction is to leading to the structure of isolation diffusion horizontal proliferation width; It is characterized in that: comprise and suppress horizontal proliferation with cannelure, just in the face of leading to the isolation diffusion district and the back side to logical isolation diffusion district; Saidly just suppress horizontal proliferation and use cannelure in the face of inboard, logical isolation diffusion district is provided with, said inhibition horizontal proliferation is provided with annular deactivation slot with cannelure one side.
2. a kind of structure that reduces logical isolation diffusion horizontal proliferation width according to claim 1; It is characterized in that: the said back side is 120-160um to logical isolation diffusion district ring width; Be 60-100um just in the face of logical isolation diffusion district ring width; Said inhibition horizontal proliferation uses the cannelure width to be 20-60um, and the degree of depth is 30-40um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202703709U CN202167493U (en) | 2011-07-28 | 2011-07-28 | A structure for reducing the transverse diffusion width in communication isolation and diffusion |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202703709U CN202167493U (en) | 2011-07-28 | 2011-07-28 | A structure for reducing the transverse diffusion width in communication isolation and diffusion |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202167493U true CN202167493U (en) | 2012-03-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011202703709U Withdrawn - After Issue CN202167493U (en) | 2011-07-28 | 2011-07-28 | A structure for reducing the transverse diffusion width in communication isolation and diffusion |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202167493U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103296076A (en) * | 2013-05-30 | 2013-09-11 | 江苏捷捷微电子股份有限公司 | Planar thyristor and chip and method for manufacturing planar thyristor |
-
2011
- 2011-07-28 CN CN2011202703709U patent/CN202167493U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103296076A (en) * | 2013-05-30 | 2013-09-11 | 江苏捷捷微电子股份有限公司 | Planar thyristor and chip and method for manufacturing planar thyristor |
| CN103296076B (en) * | 2013-05-30 | 2016-12-28 | 江苏捷捷微电子股份有限公司 | Plane IGCT, for manufacturing chip and the manufacture method of plane IGCT |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP02 | Change in the address of a patent holder |
Address after: 226200, 8, Xinglong Road, Qidong science and Technology Pioneer Park, Jiangsu Patentee after: Jiangsu Jiejie Microelectronics Co., Ltd. Address before: 226200, No. 8, Xinglong Road, Chengbei Industrial Zone, Qidong Economic Development Zone, Jiangsu, Nantong Patentee before: Jiangsu Jiejie Microelectronics Co., Ltd. |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20120314 Effective date of abandoning: 20130925 |
|
| RGAV | Abandon patent right to avoid regrant |