CN202142547U - Thin film solar cell - Google Patents
Thin film solar cell Download PDFInfo
- Publication number
- CN202142547U CN202142547U CN 201120267528 CN201120267528U CN202142547U CN 202142547 U CN202142547 U CN 202142547U CN 201120267528 CN201120267528 CN 201120267528 CN 201120267528 U CN201120267528 U CN 201120267528U CN 202142547 U CN202142547 U CN 202142547U
- Authority
- CN
- China
- Prior art keywords
- solar cell
- film solar
- thin film
- resilient coating
- utility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The utility model relates to the technical field of solar energy, in particular to a thin film solar cell. Possible raw materials are considered based on functions of each solar film layer, and raw materials capable of being prepared in non-vacuum mode are selected from the possible raw materials. Finally, combination is optimized according to sequence of film sedimentation and matching performance of energy bands and crystal lattices between film layers. A solar cell structure of Mo/CISe/In2S3/Tio2/FTO is designed. All functional thin film layers can be prepared in non-vacuum mode which is low in cost and has the advantage of evenly forming films in large area, and the thin film solar cell is suitable for commercialized production.
Description
Technical field
The utility model relates to technical field of solar, is specifically related to a kind of thin-film solar cells.
Background technology
Solar energy as regenerative resource develops rapidly in recent years, thin-film solar cells with have cost low, can be mass-produced and be easy to the developing direction that advantage such as integrated becomes following solar cell.New compound CIS (CuInSe
2, CISe), copper indium sulphur (CuInS
2, CIS) or its mix gallium compound (CuInxGa1-x (and S, Se)
2, CIGS) wait the compound film solar cell to have the absorption efficiency height, characteristics such as bandwidth is moderate have obtained great development.
Absorbing layer of thin film solar cell uses the vacuum preparation method to obtain usually, comprising: the chemical vapor transportation of vacuum evaporation, magnetron sputtering, electro-deposition, electron beam evaporation, plating, enclosure space, chemical vapour deposition (CVD), molecular beam epitaxy, Metalorganic chemical vapor deposition method etc.Though the vacuum preparation method can obtain the solar cell of greater efficiency, defective such as have that vacuum equipment is expensive, the material utilization rate is low and settling rate is low makes the defective of should not large tracts of land commercially producing.
The utility model content
The purpose of the utility model is to provide a kind of thin-film solar cells, to solve above-mentioned technological ` topic.
The technological ` topic that the utility model solved can adopt following technical scheme to realize:
A kind of thin-film solar cells comprises substrate, resilient coating, absorbed layer, it is characterized in that, the FTO glass substrate is adopted in said substrate, and said substrate is provided with a Window layer, and said Window layer adopts fine and close TiO
2Window layer as the n type.
Fine and close TiO
2Raw material are cheap and can use spray pyrolysis method to prepare, and underlayer temperature is about 450 ℃.
Said resilient coating is set on the said Window layer, and said resilient coating adopts In
2S
3As resilient coating.In
2S
3Have low toxicity (normally used CdS is the high toxicity material) and can use spray pyrolysis method to prepare, underlayer temperature is about 200 ℃.
Said absorbed layer adopts the CISe absorbed layer.
The Mo back electrode is set on the said absorbed layer.
Said substrate, Window layer, resilient coating, absorbed layer and back electrode have been formed Mo/CISe/In
2S
3/ TiO
2The solar battery structure of/FTO.
The utility model is considered possible raw material from the function of each rete of solar energy; Therefrom choose the raw material that can adopt antivacuum method to precipitate again, can be with between the order of last combination film deposition and each rete, the matching of lattice etc. is optimized combination.Experiment is adopted Mo/CISe/In through deliberating repeatedly, calculate and contrast etc.
2S
3/ TiO
2The solar battery structure of/FTO.
Beneficial effect: owing to adopt technique scheme, the solar battery structure of the utility model, the antivacuum method that makes its all function film layer all can adopt at a low price, have the even film forming characteristics of large tracts of land prepares the demand that is suitable for commercially producing.
Description of drawings
Fig. 1 is the CISe thin-film solar cell structure figure of the utility model.
Embodiment
Technological means, the creation characteristic of realizing for the utility model, reach purpose and be easy to understand with effect and understand, the utility model is done further elaboration below in conjunction with accompanying drawing and embodiment:
With reference to Fig. 1, a kind of thin-film solar cells comprises substrate, resilient coating, absorbed layer, and the FTO glass substrate is adopted in substrate, and substrate is provided with a Window layer, and Window layer adopts fine and close TiO
2Window layer as the n type.Fine and close TiO
2Raw material are cheap and can use spray pyrolysis method to prepare, and underlayer temperature is about 450 ℃.
Resilient coating is set on the Window layer, and resilient coating adopts In
2S
3As resilient coating.In
2S
3Have low toxicity (normally used CdS is the high toxicity material) and can use spray pyrolysis method to prepare, underlayer temperature is about 200 ℃.Absorbed layer adopts the CISe absorbed layer.The Mo back electrode is set on the absorbed layer.Substrate, Window layer, resilient coating, absorbed layer and back electrode have been formed Mo/CISe/In
2S
3/ TiO
2The solar battery structure of/FTO.
The utility model is considered possible raw material from the function of each rete of solar energy; Therefrom choose the raw material that can adopt antivacuum method to precipitate again, can be with between the order of last combination film deposition and each rete, the matching of lattice etc. is optimized combination.Experiment is adopted Mo/CISe/In through deliberating repeatedly, calculate and contrast etc.
2S
3/ TiO
2The solar battery structure of/FTO.
More than show and basic principle of description the utility model and the advantage of principal character the utility model.The technical staff of the industry should understand the restriction that the utility model does not receive above-mentioned method for using; The principle of describing in above-mentioned method for using and the specification of just saying the utility model; The utility model also has various changes and modifications under the prerequisite that does not break away from the utility model spirit and scope, and these variations and improvement all fall into and require the interior the utility model requirement protection range of protection the utility model scope to be defined by appending claims and equivalent thereof.
Claims (5)
1. a thin-film solar cells comprises substrate, resilient coating, absorbed layer, it is characterized in that, the FTO glass substrate is adopted in said substrate, and said substrate is provided with a Window layer, and said Window layer adopts fine and close TiO
2Window layer as the n type.
2. a kind of compound film solar cell according to claim 1 is characterized in that: said resilient coating is set on the said Window layer, and said resilient coating adopts In
2S
3As resilient coating.
3. a kind of compound film solar cell according to claim 2 is characterized in that: said absorbed layer adopts the CISe absorbed layer.
4. a kind of compound film solar cell according to claim 3 is characterized in that: the Mo back electrode is set on the said absorbed layer.
5. according to any described a kind of compound film solar cell of claim 1 to 4, it is characterized in that: said substrate, Window layer, resilient coating, absorbed layer and back electrode have been formed Mo/CISe/In
2S
3/ TiO
2The solar battery structure of/FTO.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120267528 CN202142547U (en) | 2011-07-27 | 2011-07-27 | Thin film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120267528 CN202142547U (en) | 2011-07-27 | 2011-07-27 | Thin film solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202142547U true CN202142547U (en) | 2012-02-08 |
Family
ID=45553592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120267528 Expired - Fee Related CN202142547U (en) | 2011-07-27 | 2011-07-27 | Thin film solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202142547U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102543475A (en) * | 2012-02-15 | 2012-07-04 | 中国科学院合肥物质科学研究院 | Method for preparing photoanode thin film material |
-
2011
- 2011-07-27 CN CN 201120267528 patent/CN202142547U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102543475A (en) * | 2012-02-15 | 2012-07-04 | 中国科学院合肥物质科学研究院 | Method for preparing photoanode thin film material |
| CN102543475B (en) * | 2012-02-15 | 2014-08-27 | 中国科学院合肥物质科学研究院 | Method for preparing photoanode thin film material |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Pastuszak et al. | Photovoltaic cell generations and current research directions for their development | |
| Roy et al. | Perovskite solar cells: a review of the recent advances | |
| CN102054897B (en) | Method for preparing thin film solar cell from multi-element alloy single target material | |
| CN103999229B (en) | The manufacture method with the CZTS system thin film of dual band gap gradient, the manufacture method of the CZTS system solaode with dual band gap gradient and CZTS system solaode | |
| CN101789469B (en) | Method for preparing light absorption layer of Cu-In-Ga-Se-S thin film solar cell | |
| Salhi | The photovoltaic cell based on CIGS: principles and technologies | |
| KR101574658B1 (en) | 3-dimentional solar cell based on Perovskite, and the preparation method thereof | |
| CN106282926A (en) | A kind of method that room temperature sputtering method prepares titanium deoxid film | |
| CN106653898B (en) | A kind of CZTS solar battery | |
| CN102751388A (en) | Preparation method of Cu-In-Ga-Se thin-film solar cell | |
| CN103151463B (en) | A kind of organic solar batteries and preparation method thereof | |
| Waleed et al. | Performance improvement of solution-processed CdS/CdTe solar cells with a thin compact TiO 2 buffer layer | |
| CN102694077B (en) | Preparation method of CIGS (copper indium gallium diselenide) thin-film solar cell | |
| CN102931286A (en) | Method for preparing absorption layer of copper-zinc-tin-sulfide thin film solar cell | |
| CN204315592U (en) | A kind of compound film solar cell | |
| CN103515482A (en) | Copper-indium-gallium-selenium thin film solar cell absorption layer and preparation method and application thereof | |
| CN103318851B (en) | Copper-indium-gallium-sulfur-selenium solar cell, film absorbing layer and preparation method thereof | |
| CN102437237A (en) | Chalcopyrite type thin film solar cell and manufacturing method thereof | |
| CN101235475A (en) | Method for preparing copper indium sulfide thin film | |
| CN109638096A (en) | A kind of compound semiconductor thin film solar cell preparation method | |
| Boukortt et al. | All-perovskite tandem solar cells: From certified 25% and beyond | |
| CN102544230A (en) | Method for growing variable forbidden bandwidth cadmium (Cd1)-x zinc (Zn) x tellurium (Te) film | |
| CN202142547U (en) | Thin film solar cell | |
| CN203932119U (en) | Graphene electrodes fexible film perovskite solar cell | |
| CN103137768A (en) | Photovoltaic device in double-absorption-layer PIN structure and manufacture method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120208 Termination date: 20120727 |