CN202142496U - Analyzer for ion implantation apparatus - Google Patents
Analyzer for ion implantation apparatus Download PDFInfo
- Publication number
- CN202142496U CN202142496U CN201120265256U CN201120265256U CN202142496U CN 202142496 U CN202142496 U CN 202142496U CN 201120265256 U CN201120265256 U CN 201120265256U CN 201120265256 U CN201120265256 U CN 201120265256U CN 202142496 U CN202142496 U CN 202142496U
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- China
- Prior art keywords
- ion
- analyzer
- screening pipe
- movable screw
- ion screening
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Abstract
The utility model relates to an analyzer for an ion implantation apparatus. The analyzer comprises an ion screening tube and graphite on the side walls of the ion screening tube, wherein grooves are formed on the bottom wall of the ion screening tube and close to the side walls; a movable screw rod is mounted on the side walls of the ion screening tube and perpendicular to the ion beam outlet direction and extends into the ion screening tube; a telescopic brush is mounted at the end of the movable screw rod in the ion screening tube, and a driving mechanism is mounted at the end of the movable screw rod outside the ion screening tube; when the telescopic brush is in the stretched sate, the top end of the telescopic brush is positioned at the ion beam outlet; and when in the folded state, the telescopic brush is positioned in the groove on one side of the side wall of the ion screening tube perpendicular to the ion beam outlet direction. The analyzer for the ion implantation apparatus has the advantages that the structure is simple, stripped materials can be automatically cleaned, the possibility that the stripped materials enter the rear segment is greatly lowered, and the labor intensity of the maintenance staff is greatly reduced.
Description
Technical field
The utility model relates to a kind of analyzer of ion implantor.
Background technology
Ion implantation technique is a kind of material surface modifying new and high technology that development in recent years is got up; Its basic principle is: the use energy is that the ion beam of tens to hundreds of kev magnitudes incides in the material, and the interaction of a series of physics and chemistry will take place for atom in ion beam and the material or molecule, and incident ion is off-energy gradually; Rest in the material at last; And cause that material surface composition, structure and performance change, thus optimize the material surface performance, or obtain new excellent properties.Owing to need not under hot environment, to carry out; Therefore can not change the overall dimension and the surface smoothness of workpiece; Ion need not to heat-treat and fine finishining after injecting; The interaction of a series of physics and chemistry is taken place and is formed a new surface by ion beam and body surface in ion implanted layer, does not have the problem of peeling off between it and the matrix.
In ion implantor platform production process, may be mingled with a spot of other gas in the reacting gas, like this from the ion that ion source is drawn except the foreign ion of needs, also have other ions.So all ion beams from ion source to the wafer end; Must be through the space in a screening magnetic field; Analyzer just, said analyzer comprise the graphite on ion screening pipe, the ion screening pipe sidewall, and the effect of the graphite on the said ion screening pipe sidewall is to avoid that a large amount of unwanted ions puncture ions screening pipe in the ion screening pipe; The arrival end of ion screening pipe and ion source end are on same straight line, and the port of export of ion screening pipe and vacuum chamber are on same straight line.Like this in process through ion screening pipe; There are a large amount of unwanted ions can get on the graphite of ion screening pipe; Time one is long; A large amount of overburdens can come off from graphite, and the ion screening pipe that uses now is screening pipe and to lead to vacuum chamber be a plane from the ion source end to ion, and the overburden in the ion screening pipe arrives vacuum chamber to be had no and stop.Said overburden can be followed ion beam to get into vacuum chamber and influence properties of product.
The utility model content
The purpose of the utility model provides a kind of analyzer of ion implantor of automatic cleaning overburden.
The technical solution of the utility model is; The analyzer of ion implantor; Comprise the graphite on ion screening pipe, the ion screening pipe sidewall, its special character is that the diapire of said ion screening pipe is provided with groove near side-walls; On the ion screening pipe sidewall perpendicular to the ion beam Way out a movable screw mandrel is installed; Said movable screw mandrel stretches in the ion screening pipe, and the end of movable screw mandrel in ion screening pipe is equipped with flexible brush, and the end of movable screw mandrel outside ion screening pipe is equipped with driving mechanism.
As preferably: said movable screw mandrel through a movable vacuum Bearing Installation on ion screening pipe sidewall.
As preferably: said flexible brush is when extended configuration, and flexible brush top is positioned at the ion beam exit; Said flexible brush is positioned at the groove perpendicular to ion screening pipe sidewall one side of ion beam Way out when receiving overlapping state.
As preferably: the degree of depth of said groove is 2-5 centimetre, and groove width is 3-5 centimetre.
As preferably: said driving mechanism is a stepping motor.
As preferably: said flexible brush is processed by macromolecular material high temperature resistant, that pliability is good.
As preferably: said macromolecular material is rubber or plastics or fiber.
Compared with prior art, the utility model has the advantages that simple in structure, automatic cleaning, significantly reduced overburden and get into the possibility of back segment, also significantly reduced attendant's labour.
Description of drawings
Fig. 1 is the vertical view of the utility model ion screening pipe.
Embodiment
The utility model below will combine accompanying drawing to do further to detail:
Fig. 1 shows the preferred embodiment of the utility model.
See also shown in Figure 1; In the present embodiment; The analyzer of ion implantor comprises the graphite 111 on ion screening pipe 1, the ion screening pipe sidewall 11, and the diapire 12 of said ion screening pipe is provided with groove 121 near sidewall 11 places; Wear a movable vacuum bearing (not shown) on the ion screening pipe sidewall 11 perpendicular to the ion beam Way out; Movable screw mandrel 21 passes the movable vacuum bearing and stretches in the ion screening pipe 1, and the end of movable screw mandrel 21 in ion screening pipe 1 is equipped with flexible brush 211, and the end of movable screw mandrel 21 outside ion screening pipe 1 is equipped with driving mechanism 212.Because the required precision to flexible brush 211 positions is higher, driving mechanism 212 adopts stepping motor; Flexible brush 211 is by high temperature resistant, and the macromolecular material that pliability is good is processed, and said macromolecular material can be plastics, synthetic fibers, rubber etc.Consider the size of the ion screening pipe of existing ion implantor, the degree of depth of groove 121 is chosen as 2-5 centimetre, and the width of groove 121 must be greater than 3 centimetres, and too narrow bigger overburden falls less than going in the groove 121, and the width of groove 121 is chosen as 3-5 centimetre.
Said flexible brush 211 is when extended configuration, and flexible brush 211 tops are positioned at the ion beam exit; Said flexible brush 211 is positioned at the groove 121 perpendicular to ion screening pipe sidewall 11 1 sides of ion beam Way out when receiving overlapping state.
The operation principle of this device is following: before cavity environment monitoring every day; Opening stepping motor 212 drive activity screw mandrels 21 moves forward and backward; Drive 5 of flexible brush 211 actions and stop stepping motor 212 motions back and forth afterwards; At this moment the overburden on the ion screening pipe diapire 12 all is swept in the groove 121, ion implantor begins to do the cavity environment monitoring again, and the overburden in the groove 121 is pulled down ion screening pipe 1 and cleared up when doing the safeguarding of whole ion implantor.
The above is merely the preferred embodiment of the utility model, and all equalizations of being done according to the utility model claim scope change and modify, and all should belong to the covering scope of the utility model claim.
Claims (7)
1. the analyzer of an ion implantor; Comprise the graphite on ion screening pipe, the ion screening pipe sidewall; It is characterized in that: the diapire of said ion screening pipe is provided with groove near side-walls, on the ion screening pipe sidewall perpendicular to the ion beam Way out a movable screw mandrel is installed, and said movable screw mandrel stretches in the ion screening pipe; The end of movable screw mandrel in ion screening pipe is equipped with flexible brush, and the end of movable screw mandrel outside ion screening pipe is equipped with driving mechanism.
2. the analyzer of ion implantor according to claim 1 is characterized in that: said movable screw mandrel through a movable vacuum Bearing Installation on the sidewall of ion screening pipe.
3. the analyzer of ion implantor according to claim 1 is characterized in that: said flexible brush is when extended configuration, and flexible brush top is positioned at the ion beam exit; Said flexible brush is positioned at the groove perpendicular to ion screening pipe sidewall one side of ion beam Way out when receiving overlapping state.
4. the analyzer of ion implantor according to claim 1, it is characterized in that: the degree of depth of said groove is 2-5 centimetre, groove width is 3-5 centimetre.
5. the analyzer of ion implantor according to claim 1, it is characterized in that: said driving mechanism is a stepping motor.
6. the analyzer of ion implantor according to claim 1, it is characterized in that: said flexible brush is processed by macromolecular material high temperature resistant, that pliability is good.
7. the analyzer of ion implantor according to claim 6, it is characterized in that: said macromolecular material is plastics or rubber or fiber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120265256U CN202142496U (en) | 2011-07-25 | 2011-07-25 | Analyzer for ion implantation apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120265256U CN202142496U (en) | 2011-07-25 | 2011-07-25 | Analyzer for ion implantation apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202142496U true CN202142496U (en) | 2012-02-08 |
Family
ID=45553541
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201120265256U Expired - Fee Related CN202142496U (en) | 2011-07-25 | 2011-07-25 | Analyzer for ion implantation apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202142496U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023053437A1 (en) * | 2021-10-01 | 2023-04-06 | 株式会社日立ハイテク | Ion milling device |
-
2011
- 2011-07-25 CN CN201120265256U patent/CN202142496U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023053437A1 (en) * | 2021-10-01 | 2023-04-06 | 株式会社日立ハイテク | Ion milling device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Free format text: FORMER OWNER: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION Effective date: 20130427 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201203 PUDONG NEW AREA, SHANGHAI TO: 100176 DAXING, BEIJING |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20130427 Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone, Beijing Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120208 Termination date: 20180725 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |