CN202120859U - Arc-shaped micro-strip curve plane slow wave device - Google Patents
Arc-shaped micro-strip curve plane slow wave device Download PDFInfo
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- CN202120859U CN202120859U CN2011201880123U CN201120188012U CN202120859U CN 202120859 U CN202120859 U CN 202120859U CN 2011201880123 U CN2011201880123 U CN 2011201880123U CN 201120188012 U CN201120188012 U CN 201120188012U CN 202120859 U CN202120859 U CN 202120859U
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Abstract
The present utility model relates to a half-arc shaped micro-strip curve plane slow wave device matched with a traveling wave tube in the microwave vacuum electronic technology field. The device comprises a boron nitride substrate, a semicircular micro-strip curve which is provided with an input end and an output end and arranged on the substrate, and a metal shell. In the device, the micro-strip curve provided with a smooth half-arc shaped connecting part is adopted, and boron nitride with low dielectric constant, high compressive strength, high hardness and high heat conduction coefficient is adopted to make the substrate, the coupling impedance and the output power of the slow wave device are enhanced, and the intensity and the heat dissipation performance of the substrate, and the yield and the service life of the slow wave device are effectively increased. Besides the miniature characteristic, the micro-strip curve plane slow wave device can stably and reliably work above a millimeter wave frequency range, the heat dissipation performance, the coupling impedance and the output power are high, the performance and the reliability of the device are high when the device is matched with the traveling wave tube working above the millimeter wave frequency range, the production yield is high, and the service life is long.
Description
Technical field
The utility model belongs in the microwave vacuum electronic technology field and the supporting slow-wave device of using of travelling wave tube, particularly a kind of semi arch shaped microstrip curve plane slow-wave device.
Background technology
Travelling wave tube is that the speed of leaning on continuously the modulation electronics to annotate realizes the vacuum electron device that microwave is exaggerated.In travelling wave tube, electronics is annotated with the electromagnetic running wave generation effective interaction of advancing in the slow-wave device, and in the slow wave circuit that reaches tens wavelength, electronics is annotated and continuously given electromagnetic running wave the kinetic energy of electronics, thereby makes electromagnetic running wave obtain amplifying.Characteristics such as that travelling wave tube has is high-power, high efficiency, high-gain, broadband and long-life.
Slow-wave device is the critical piece that amplifies microwave energy; It is one of core devices of travelling wave tube; The quality of its high frequency characteristics directly has influence on the performance of travelling wave tube; Its task is the carry high frequency electromagnetic wave and makes the average direct current speed of this electromagnetic phase velocity a little less than the electronics notes, thereby realizes electronics notes and electromagnetic effective interaction.The improvement of slow-wave device characteristic has important effect to the characteristics such as power, efficient and frequency band that improve and improve corresponding device.
Development along with the vacuum electronic technology is greatly improved such as traditional slow-wave devices such as helix, coupling cavitys.Meanwhile, many novel slow-wave devices have also caused people's more concern, and their numerous characteristics is that traditional slow-wave device is incomparable.In recent years, the plane slow-wave device has obtained further attention.As the member of plane slow-wave device, microstrip type slow-wave device processing technology is simple, perfect heat-dissipating, and cost is low, and structure is little, and is in light weight, and traditional microstrip line processes technology is very ripe, and this provides wide prospect for producing in batches.Little band curve plane slow-wave device is one type of novel plane slow-wave device applicable to stripe electron beam.Magnifying in brave " theoretical research of microstrip type meander-line slow wave structure " meeting paper that waits the people in the 15 academic annual meeting of military microwave tube seminar, to deliver of Shandong University proposes a kind of right angle shaped microstrip curve plane slow-wave device; Comprise: substrate, be fixed in the square wave shaped microstrip curve and the metal shell of tape input on the substrate, output.This device is a kind of little band curve plane slow-wave device that is operated in S-band (2-4GHz), and substrate wherein is the aluminium oxide (Al of purity 99%
2O
3) pottery; The little band curve that embeds on it is for annotating the square wave shaped microstrip curve (also claiming right angle shaped microstrip curve) that vertical one group in the direction of propagation is parallel to each other, equidistance is arranged and initial and end links to each other, the structural representation that is such plane slow-wave device shown in Figure 1 with electronics.Adopt the travelling wave tube of this type of slow-wave device to have advantages such as broad frequency band, big electric current and low-work voltage, thereby this type of slow-wave device is the supporting plane slow-wave device of using of a kind of very potential and miniature millimeter wave traveling wave tube.The main manufacture craft process of this little band shape plane slow-wave device comprises:
1) deposition of metal level: will grind good substrate and place in the vacuum sputtering machine with sputter deposition metal material;
2) photoetching: at the figure that copies on the substrate on the mask plate; Be the figure of microstrip type curve, depositing gluing on the substrate of metal, oven dry is to remove the solvent in the glue-line; Place exposure machine to make public; Substrate to after the exposure develops, and with the photoresist of removal of solvents exposed portion, on substrate, forms needed photoresist figure;
3) etching: through chemical etching liquid and the chemical reaction between the metal level of being etched, the material that will be etched strips down, the square wave shaped microstrip curve shape that formation will be wanted.
Though this type of little band curve plane slow-wave device and the supporting usefulness of microwave travelling wave tube have effect preferably; But when being operated in that travelling wave tube more than the millimeter wave frequency band is supporting to be used, because of the physical dimension of its slow-wave device, will become very little; Turning requirement on machining accuracy to the right angle is high, and actual processing often is difficult to accurately realize; And, and when little band curve small-sized, also be prone to generation point discharge effect at the top of the horn place at right angle because sudden change not matching of causing in place, right angle will cause wave reflection; In addition, substrate employing purity is 99% aluminium oxide ceramics, and the relative dielectric constant of aluminium oxide ceramics is than higher (ε
r=9.6), substrate thickness is 1.35mm when being operated in S-band, and this alumina ceramic substrate still can use; But (94～97GHz) time, require substrate very thin (thickness is at tens microns), aluminium oxide ceramics at this moment is easy to fragmentation, in addition the conductive coefficient of aluminium oxide ceramics (W (mK) when travelling wave tube is operated in the W wave band
-1) be merely 25.5, its heat dispersion is still relatively poor, this not only influenced this device production rate of finished products, but also influenced the further raising of this type of plane slow-wave device performance, the coupling impedance and the power output of this square wave shaped microstrip curve plane slow-wave device are also relatively low.Above-mentioned " square wave " little band curve is because little band curve presents the wave reflection that causes that suddenlys change in square corner, the top of the horn place at right angle is prone to produce discharge effect again; When adopting aluminium oxide ceramics to make substrate, not only its poor radiation, and its performance to be difficult to reach millimeter wave and to work with super band because of being prone to fragmentation in addition to the requirement of its intensity.Thereby the above-mentioned background technology exists the structure of device to be difficult to miniaturization, and the substrate poor radiation and is operated in millimeter wave with the supporting use of the travelling wave tube of super band, its performance and poor reliability, defective such as coupling impedance and power output are relatively low.
Summary of the invention
The purpose of the utility model is a kind of circular arc shaped microstrip of research and design curve plane slow-wave device; Be prone to the discharge effect that produces again because of the wave reflection that presents sudden change and cause and at the top of the horn place at right angle in the corner at right angle to overcome the little band curve of background technology; And aluminium oxide ceramics is done substrate easy fragmentation below certain thickness, is made the structure of device be difficult to defectives such as miniaturization; With reach when making the miniaturization of little band curve plane slow-wave device, can in higher frequency range work and coupling impedance and power output be high, thermal diffusivity is good; Effectively improve performance and reliability thereof when the high frequency band travelling wave tube following with being operated in millimeter is supporting to be used, and the purposes such as useful life that prolong slow-wave device.
The solution of the utility model is the connecting portion of square wave shaped microstrip curve to be connected by the right angle mode change semi arch (ring) shape into and connect; Make little band curve become a level and smooth semi arch shaped microstrip curve; Thereby both avoided little band curve to cause the reflex in the transmission because of sudden change; Increased the distance of little band curve between the adjacent corners place again, prevented that little band curve from producing point discharge around the corner, simplified the processing technology of little band curve simultaneously, further improved the coupling impedance and the power output of slow-wave device; Adopt relative dielectric constant ε
r=4, compression strength, hardness and conductive coefficient all much larger than the boron nitride of aluminium oxide ceramics make substrate, with the intensity and the thermal diffusivity of effective raising substrate, when realizing device miniaturization, satisfy device in the more requirement of high band operation; The utility model is promptly realized its goal of the invention with this.Thereby; The utility model circular arc shaped microstrip curve plane slow-wave device comprises substrate; Be fixed in tape input on the substrate, output by one group be parallel to each other, equidistance is arranged and initial and end links to each other little band curve and metal shell; Key is that substrate is the boron nitride substrate; And be fixed in on-chiply be parallel to each other, equidistance is arranged and the connecting portion of little band curve that initial and end links to each other is a semicircular ring shaped microstrip curve, little band curve bottom surface and substrate upper surface are fixed into one by traditional sputter precipitation method.
The thickness of the little belt body of above-mentioned semi-round ring shape and radial width are identical with the thickness and the width of little band curve line body.And said boron nitride substrate, the purity of boron nitride is>=99wt%, electric constant ε
r=3～5, Vickers hardness is that HV3200～4000, compression strength are 800～1000MPa, conductive coefficient (W (mK)
-1) be 79.5.
The utility model changes the square wave shaped microstrip curve in the slow-wave device of plane into smooth semi arch shaped microstrip curve; Thereby both avoided little band curve to cause the reflex in the transmission because of sudden change; Increased the distance of little band curve between the adjacent corners place again, prevented that little band curve from producing point discharge around the corner; Simplified the processing technology of little band curve simultaneously, and the coupling impedance of slow-wave device and power output are improved; Adopt relative dielectric constant ε
r=4; Compression strength, hardness and conductive coefficient are all made substrate much larger than the boron nitride of aluminium oxide ceramics; Rate of finished products and useful life during intensity, thermal diffusivity and the slow-wave device that has improved substrate again effectively produced are when realizing device miniaturization, satisfy device in the more requirement of high band operation.The Vickers hardness of the utility model boron nitride substrate is up to HV3200～4000, simultaneously its compression strength is up to 800～1000MPa, conductive coefficient (W (mK)
-1) be the hardness HV1900, compression strength 9～10MPa of 79.5 equal ratio aluminum oxides pottery and 25.5 conductive coefficient (W (mK)
-1) high times; During with the supporting use of the travelling wave tube that is operated in 90～110GHz, its coupling impedance can improve 7.7～10.2% than background technology, its coupling impedance can improve 8.0～8.3% than background technology when working frequency range 94～97GHz, normalization phase speed ratio improves 7.0～7.2%.Thereby; The utlity model has in the miniaturization of little band curve plane slow-wave device, can be at the following high frequency band working stability of millimeter, work reliably; Thermal diffusivity is good, coupling impedance and power output high; Performance and reliability when being operated in that travelling wave tube more than the millimeter wave frequency band is supporting to be used are high, characteristics such as the rate of finished products height during slow-wave device is produced, long service life.
Description of drawings
Fig. 1 is the background technology structural representation;
Fig. 2 is the structural representation (graphics) of the utility model circular arc shaped microstrip curve plane slow-wave device;
Fig. 3 is the coupling impedance comparison diagram of the utility model execution mode and background technology.
Among the figure: 1. substrate, 2. microstrip line, 3. ribbon-like electron is annotated (movement locus during work), 4. housing.
Embodiment
This execution mode with the travelling wave tube auxiliary work be example at the circular arc shaped microstrip curve plane slow-wave device of 90～110GHz wave band, wherein: substrate 1 (long * wide * thick) 14.72 * 0.5 * 0.05mm, material are purity 99wt%, relative dielectric constant ε
r=4, the boron nitride of losstangenttan=0.00025; The line body of microstrip line 2 (long * wide * thick) 81.48 * 0.04 * 0.015mm, material are metal Cu; Little band curve is totally 92 cycles; The little band curve of whole piece is annotated the long 14.72mm of direction (being each cycle to annotate the long 0.16mm of direction along electronics) along electronics; Interval between adjacent two parallel little bands is 0.04mm, and the inside radius of connecting portion semicircular ring shaped microstrip curve is R0.02mm; Metal shell 4 (length * wide * height) 14.72 * 0.6 * 0.4mm; Forward and backward two ends are connected with the electron gun and the collector of travelling wave tube respectively during supporting use.This execution mode circular arc shaped microstrip curve plane slow-wave device still adopts common process; That is: at first adopt vacuum sputtering that metal Cu is deposited on the good substrate 1 of mill; Handle promptly to make through photoetching treatment and chemical etching by said structure, size then and be fixed on the substrate 1; Connecting portion is little band (song) line 2 of semi-round ring shape, adopts anaerobic Cu encapsulation at last.
Claims (3)
1. circular arc shaped microstrip curve plane slow-wave device; Comprise substrate; Be fixed in tape input on the substrate, output by one group be parallel to each other, equidistance is arranged and initial and end links to each other little band curve and metal shell; It is characterized in that substrate is the boron nitride substrate, and be fixed in on-chiply be parallel to each other, equidistance is arranged and the connecting portion of little band curve that initial and end links to each other is a semicircular ring shaped microstrip curve, little band curve bottom surface and substrate upper surface are fixed into one by traditional sputter precipitation method.
2. by the said circular arc shaped microstrip of claim 1 curve plane slow-wave device, it is characterized in that the thickness of the little belt body of said semi-round ring shape and radial width are identical with the thickness and the width of little band curve line body.
3. by the said circular arc shaped microstrip of claim 1 curve plane slow-wave device, the boron nitride purity that it is characterized in that said boron nitride substrate is>=99wt%, electric constant ε
r=3～5, the Vickers hardness of substrate is that HV3200～4000, compression strength are that 800～1000MPa, conductive coefficient are 79.5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201880123U CN202120859U (en) | 2011-06-07 | 2011-06-07 | Arc-shaped micro-strip curve plane slow wave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201880123U CN202120859U (en) | 2011-06-07 | 2011-06-07 | Arc-shaped micro-strip curve plane slow wave device |
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| Publication Number | Publication Date |
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| CN202120859U true CN202120859U (en) | 2012-01-18 |
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|---|---|---|---|
| CN2011201880123U Expired - Fee Related CN202120859U (en) | 2011-06-07 | 2011-06-07 | Arc-shaped micro-strip curve plane slow wave device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102324362A (en) * | 2011-06-07 | 2012-01-18 | 电子科技大学 | Circular-arc microstrip curve plane slow wave device |
| CN114530359A (en) * | 2022-02-22 | 2022-05-24 | 电子科技大学 | Coaxial multichannel suspended microstrip line slow-wave structure traveling wave tube |
-
2011
- 2011-06-07 CN CN2011201880123U patent/CN202120859U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102324362A (en) * | 2011-06-07 | 2012-01-18 | 电子科技大学 | Circular-arc microstrip curve plane slow wave device |
| CN102324362B (en) * | 2011-06-07 | 2013-12-11 | 电子科技大学 | Circular-arc microstrip curve plane slow wave device |
| CN114530359A (en) * | 2022-02-22 | 2022-05-24 | 电子科技大学 | Coaxial multichannel suspended microstrip line slow-wave structure traveling wave tube |
| CN114530359B (en) * | 2022-02-22 | 2023-04-18 | 电子科技大学 | Coaxial multichannel suspended microstrip line slow-wave structure traveling wave tube |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120118 Termination date: 20140607 |