CN202103059U - Solar cell slice - Google Patents
Solar cell slice Download PDFInfo
- Publication number
- CN202103059U CN202103059U CN2011201930404U CN201120193040U CN202103059U CN 202103059 U CN202103059 U CN 202103059U CN 2011201930404 U CN2011201930404 U CN 2011201930404U CN 201120193040 U CN201120193040 U CN 201120193040U CN 202103059 U CN202103059 U CN 202103059U
- Authority
- CN
- China
- Prior art keywords
- solar cell
- silicon chip
- front surface
- silicon slice
- slice
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
The utility model discloses a solar cell slice, which mainly comprises a silicon slice, a antireflective membrane, an aluminium back field and metal electrodes, wherein the antireflective membrane is deposited on the front surface of the silicon slice, the aluminium back field is printed on the back surface of the silicon slice, the metal electrodes are respectively machined on the front surface and the back surface of the solar cell slice, the front surface of the silicon slice is formed into an uneven suede, and the back surface of the silicon slice is formed into an even polished surface. In the scheme of the utility model, due to the structural deign of the back surface of the silicon slice, the silicon slice has better solar energy absorption utilization rate, so that the short circuit current of a solar cell can be enlarged, and simultaneously, the conversion efficiency of the solar cell can be improved.
Description
Technical field
The utility model relates to the crystal-silicon solar cell field, is specifically related to a kind of solar cell piece.
Background technology
Along with people's is to the attention and the promotion of the regeneration green energy, and the crystal-silicon solar cell technology has obtained development fast, traditional crystal silicon solar battery sheet; It mainly includes silicon chip, antireflective coating, aluminium back of the body field and metal electrode; Silicon chip all forms up-and-down pyramid matte on its front surface, back of the body surface after making herbs into wool, antireflective coating is deposited on the front surface of silicon chip; Aluminium back of the body field is printed on the back of the body surface of silicon chip, metal electrode be formed on the battery sheet just, place, back of the body two sides.
Solar cell absorbs getting into the inner sunray of battery sheet under light conditions, excites the electron hole pair in the silicon chip PN junction to be separated by internal electric field, and the hole flows to the p district by the n district, and electronics flows to the n district by the p district, just forms electric current behind the connection circuit; If photon is absorbed in the internal electric field position, electron hole pair will be separated so; If electron hole pair is separated outside internal electric field; The distance of internal electric field is left less than minority diffusion length in the position of electron hole pair; That just might be absorbed, and near more from the position of electric field, and absorbed probability machine is big more; And if the distance of internal electric field is left greater than minority diffusion length in the position of electron hole pair, so just can not be absorbed.
The front surface matte design of said silicon chip is beneficial to secondary absorption or the repeatedly absorption of battery sheet to light, reduces the reflection of incident light rate; Photoelectric conversion efficiency with final raising battery; The penetration capacity of ruddiness is more intense in the sunlight, and just having got into does not have absorbed ruddiness in the battery, can be returned by the back of the body surface reflection of silicon chip; Because the back of the body surface of silicon chip is up-and-down suede structure; Random diffuse reflection can take place in ruddiness on back of the body surface, then ruddiness is with regard to difficult position or the PN junction position that reflexes near PN junction, though ruddiness all possibly inspire electron hole pair in the inner any position of battery sheet; But owing to be in position away from PN junction; The electron hole pair that ejects is just significantly reduced by the probability that internal electric field separates, and has reduced the absorption rate of solar energy thus, and has influenced the final photoelectric conversion efficiency of battery.
In view of this, the inventor furthers investigate the solar cell chip architecture, and this case produces thus.
The utility model content
The purpose of the utility model is to provide a kind of solar cell piece, and it has overcome, and the unreasonable design of silicon chip back of the body surface texture has caused sunray absorption rate and the not good problem of photoelectric conversion efficiency in the prior art.
In order to reach above-mentioned purpose, the solution of the utility model is:
A kind of solar cell piece; Mainly include silicon chip, antireflective coating, aluminium back of the body field and metal electrode; Above-mentioned antireflective coating is deposited on the front surface of above-mentioned silicon chip, and above-mentioned aluminium back of the body field is printed on the back of the body surface of above-mentioned silicon chip, above-mentioned metal electrode be formed on the battery sheet just, place, back of the body two sides; The front surface of above-mentioned silicon chip forms up-and-down matte, and back of the body surface forms smooth burnishing surface.
After adopting such scheme; A kind of solar cell piece of the utility model; The front surface of its silicon chip forms up-and-down matte, and light reflects on the different inclined-planes of matte and makes the battery sheet form secondary or repeatedly absorption to light, and it has reduced the reflection of light rate; Increased sunray and got into the ratio in the silicon chip, for the solar cell opto-electronic conversion provides good condition; Especially; The back of the body surface of this case silicon chip forms smooth burnishing surface, and getting in the battery does not have absorbed whole ruddiness, can smooth burnishing surface is well-regulated reflects by this; Help ruddiness and be reflected to the position of perhaps arriving PN junction near the position of PN junction; Ruddiness just has bigger probability inspiring electron hole pair from the nearer position of PN junction like this, and has increased the probability that this electron hole pair that ejects is separated by internal electric field greatly, and the back of the body surface structure design of this case silicon chip makes silicon chip to solar energy preferable absorption rate arranged thus; Having increased the solar cell short circuit current simultaneously, also improved the conversion efficiency of solar cell.
Description of drawings
Fig. 1 is the structural representation of the utility model.
Label declaration
Carry on the back surperficial 12 antireflective coatings 2
The aluminium back of the body 3 metal electrode 4,5
Embodiment
In order further to explain the technical scheme of the utility model, come the utility model is set forth in detail through specific embodiment below.
Be illustrated in figure 1 as a kind of solar cell piece of the utility model, it mainly includes silicon chip 1, antireflective coating 2, aluminium back of the body field 3 and metal electrode 4,5; Wherein, Silicon chip 1 forms behind diffusing, doping than the PN junction structure near front surface 11 within it; Antireflective coating 2 is deposited on the front surface 11 of silicon chip 1; The metal electrode 4 of these front surface 11 corresponding printings is the grid silver electrode, and aluminium back of the body field 3 is printed on the back of the body surface 12 of silicon chip 1, and these back of the body surface 12 corresponding metal electrodes that print 5 are back of the body silver electrode; Solar cell is under light conditions; Absorb getting into silicon chip 1 inner sunray; It excites the interior electron hole pair of PN junction of silicon chip 1 to be separated by internal electric field, and the hole flows to the p district by the n district, and electronics flows to the n district by the p district; Connect circuit through metal electrode 4,5, with formed electric current with the electromotive force stores in battery.
The improvement of the utility model is: the front surface 11 of silicon chip 1 forms a up-and-down matte, and back of the body surface 12 forms a smooth burnishing surface; During work; Sunray is injected by the front surface 11 of silicon chip 1, incide the inclined-plane of certain angle when light after, can be reflected on the inclined-plane of another angle; Form of secondary absorption or the repeatedly absorption of battery sheet thus to light; It has reduced the reflection of light rate, has increased sunray and has got into the ratio in the silicon chip, for the solar cell opto-electronic conversion provides good condition; The penetration capacity of ruddiness is more intense in the sunlight; Get in the silicon chip 1 and do not have absorbed whole ruddiness; Can project on the back of the body surface 12 of silicon chip 1, because back of the body surface 12 is smooth burnishing surface, said ruddiness can be reflected by well-regulated at surperficial 12 places of the back of the body; Then ruddiness just can be reflected to the position of perhaps arriving PN junction near the position of PN junction; Ruddiness just has bigger probability inspiring electron hole pair from the nearer position of PN junction like this, and has increased the probability that this electron hole pair that ejects is separated by internal electric field greatly, and the back of the body of this case silicon chip 1 surface 12 structural designs make 1 pair of solar energy of silicon chip that preferable absorption rate arranged thus; Having increased the solar cell short circuit current simultaneously, also improved the conversion efficiency of solar cell.
Product form of the foregoing description and graphic and non-limiting the utility model and style, the those of ordinary skill of any affiliated technical field all should be regarded as not breaking away from the patent category of the utility model to its suitable variation or modification of doing.
Claims (1)
1. solar cell piece; Mainly include silicon chip, antireflective coating, aluminium back of the body field and metal electrode; Above-mentioned antireflective coating is deposited on the front surface of above-mentioned silicon chip, and above-mentioned aluminium back of the body field is printed on the back of the body surface of above-mentioned silicon chip, above-mentioned metal electrode be formed on the battery sheet just, place, back of the body two sides; The front surface of above-mentioned silicon chip forms up-and-down matte, it is characterized in that: the back of the body surface of above-mentioned silicon chip forms smooth burnishing surface.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011201930404U CN202103059U (en) | 2011-06-09 | 2011-06-09 | Solar cell slice |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011201930404U CN202103059U (en) | 2011-06-09 | 2011-06-09 | Solar cell slice |
Publications (1)
Publication Number | Publication Date |
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CN202103059U true CN202103059U (en) | 2012-01-04 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2011201930404U Expired - Fee Related CN202103059U (en) | 2011-06-09 | 2011-06-09 | Solar cell slice |
Country Status (1)
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CN (1) | CN202103059U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106206785A (en) * | 2015-04-09 | 2016-12-07 | 新日光能源科技股份有限公司 | Solar cell and manufacturing method thereof |
-
2011
- 2011-06-09 CN CN2011201930404U patent/CN202103059U/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106206785A (en) * | 2015-04-09 | 2016-12-07 | 新日光能源科技股份有限公司 | Solar cell and manufacturing method thereof |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: 362300 Quanzhou Fujian (Nanan) photoelectric information industry base Patentee after: Sunshine Branch (Fujian) energy Limited by Share Ltd Address before: 362300 Quanzhou Fujian (Nanan) photoelectric information industry base Patentee before: Sunshine earth (Fujian) new energy Co., Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120104 Termination date: 20200609 |
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CF01 | Termination of patent right due to non-payment of annual fee |