CN202072800U - Lateral plate overflowing structure for crucible of polycrystalline silicon ingot furnace - Google Patents
Lateral plate overflowing structure for crucible of polycrystalline silicon ingot furnace Download PDFInfo
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- CN202072800U CN202072800U CN2011201503584U CN201120150358U CN202072800U CN 202072800 U CN202072800 U CN 202072800U CN 2011201503584 U CN2011201503584 U CN 2011201503584U CN 201120150358 U CN201120150358 U CN 201120150358U CN 202072800 U CN202072800 U CN 202072800U
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- overflow
- crucible
- side plate
- base plate
- baseplate
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Abstract
The utility model relates to a lateral plate overflowing structure for a crucible of a polycrystalline silicon ingot furnace. The lateral plate overflowing structure comprises a baseplate and lateral plates placed around the baseplate, and a plurality of channeling grooves for guiding overflowing silicon liquid are formed at the lower edges of the lateral plates where the lower ends of the lateral plates are connected with the baseplate. A plurality of overflowing silicon liquid channeling grooves are formed at the lower edges of the lateral plates where the lower ends of the lateral plates are connected with the baseplate, which can better desludge the overrunning silicon liquid and avoid the defect of short service lift of the baseplate caused by excessive grooves formed on the baseplate. Besides, vent grooves are formed at the upper edges of the lateral plates, so as to accelerate the circulation of refrigerating gas in the crucible and reduce the microcrystallines generating in the crystallization of silicon material.
Description
Technical field
The utility model relates to the polycrystalline silicon ingot or purifying furnace technical field, relates in particular to a kind of polycrystalline silicon ingot or purifying furnace crucible side plate overflow structure.
Background technology
Polycrystalline silicon ingot or purifying furnace is an equipment of producing silicon chip raw material in the solar battery sheet, it comprise be used to place the quartz crucible of silicon material and be arranged on quartz crucible outer, by base plate and be placed on four plumbago crucibles that end to end side plate is formed on the base plate.
In the polycrystalline silicon ingot or purifying furnace use, silicon material in the polycrystalline silicon ingot or purifying furnace crucible is because of high temperature melting, produce flooded conditions sometimes, can overflow from the crucible top such as silicon liquid, perhaps, when crucible wall cracks, silicon liquid oozes out from crucible wall, the silicon liquid of overflow flow to bottom of furnace body between crucible wall and crucible side plate, usually be equipped with the overflow cotton at bottom of furnace body, be used for carrying the silicon liquid of overflow, cause damage, influence the work-ing life of polycrystalline silicon ingot or purifying furnace body of heater to avoid high temperature silicon liquid.
The overflow sfgd. of existing polycrystalline silicon ingot or purifying furnace is to drive overflow groove on the crucible base plate, have in addition do not have an overflow sfgd..And in the shortcoming that the crucible base plate leaves the sfgd. of overflow groove be: when fluting can cause a large amount of overflow of silicon liquid very little, overflow groove can not satisfy the needs of overflow, to such an extent as to also have silicon liquid to be connected the slit outflow from crucible base plate and crucible side plate; Fluting can influence the work-ing life of crucible base plate too much.
The utility model content
Main purpose of the present utility model is to provide a kind of polycrystalline silicon ingot or purifying furnace crucible side plate overflow structure, is intended to improve the effect of dredging of silicon hydrorrhea stream.
In order to achieve the above object, the utility model proposes a kind of polycrystalline silicon ingot or purifying furnace crucible side plate overflow structure, comprise: base plate and be placed on side plate around the described base plate, the lower rim that described side plate lower end is connected with base plate is provided with some guiding grooves that are used to guide overflow silicon liquid.
Preferably, the shape of described guiding groove is at least a kind of in circular arc, square, the trapezoidal or rhombus.
Preferably, this polycrystalline silicon ingot or purifying furnace crucible side plate overflow structure also comprises quartz crucible, and described quartz crucible is positioned on the described base plate; Described side plate is positioned at outside the sidewall of described quartz crucible.
Preferably, this polycrystalline silicon ingot or purifying furnace crucible side plate overflow structure also comprises thermal field case bottom holding plates, is positioned at described floor below, and the position of corresponding described guiding groove is provided with overflow weir on the described bottom holding plates.
Preferably, described side sheet room connects by carbon carbon screw rod and nut or connects by graphite screw rod and nut.
Preferably, the upper limb of described side plate is provided with some air channels.
Preferably, described guiding groove is one to 30.
A kind of polycrystalline silicon ingot or purifying furnace crucible side plate overflow structure that the utility model proposes, the lower rim that is connected with base plate by the side plate lower end at crucible is provided with some silicon hydrorrhea stream guiding grooves, can better play the effect of dredging silicon hydrorrhea stream, avoid on base plate, opening the base plate short defective in work-ing life that too much groove brings.In addition, the air channel that the side plate upper limb is opened has quickened the circulation of crucible internal cooling gas, reduces the generation of silicon material crystallite when crystallization.
Description of drawings
Fig. 1 is the structural representation of the utility model polycrystalline silicon ingot or purifying furnace crucible side plate overflow structure one embodiment.
In order to make the technical solution of the utility model clearer, clear, be described in further detail below in conjunction with accompanying drawing.
Embodiment
The technical solutions of the utility model general thought is: the lower rim that is connected with base plate by the side plate lower end at crucible is provided with some silicon hydrorrhea stream guiding grooves, can better play the effect of dredging silicon hydrorrhea stream, avoid on base plate, opening the base plate short defective in work-ing life that too much groove brings.
Below with reference to drawings and Examples, the technical scheme that realizes the utility model purpose is elaborated.Should be appreciated that specific embodiment described herein only in order to explanation the utility model, and be not used in qualification the utility model.
As shown in Figure 1, Fig. 1 is the structural representation of the utility model polycrystalline silicon ingot or purifying furnace crucible side plate overflow structure one embodiment.The utility model one embodiment proposes a kind of polycrystalline silicon ingot or purifying furnace crucible side plate overflow structure, comprise: base plate 1 and be placed on side plate 2 around the base plate 1,2 of side plates pass through carbon carbon screw rod 3 and nut 4 connects, and the lower rim that side plate 2 lower ends are connected with base plate 1 is provided with some guiding grooves 21 that are used to guide overflow silicon liquid.In other embodiments, 2 of side plates also can connect by graphite screw rod and nut.
Wherein, the quantity of guiding groove 21 and size can be set according to actual needs, desirable one to 30 of the quantity of guiding groove, and such as can being three or four, its shape can be circular arc, square, trapezoidal or rhombus etc.
The thermal field case is made of bottom holding plates, top warming plate and side warming plate, each warming plate is the heat preservation carbon felt material, bottom holding plates is positioned at floor below, and the position of the guiding groove 21 of corresponding side plate 2 lower rims is provided with the overflow weir (not shown) on the bottom holding plates.
In the polycrystalline silicon ingot or purifying furnace use, when the silicon material in the polycrystalline silicon ingot or purifying furnace crucible produces flooded conditions because of high temperature melting, can overflow from the crucible top such as silicon liquid, perhaps, crack at crucible wall, silicon liquid is when crucible wall oozes out, and the silicon liquid of overflow can flow out plumbago crucibles fast from the guiding groove 21 of the lower rim of side plate 2, and flow on the overflow cotton of bottom of furnace body through the overflow weir on the thermal field case bottom holding plates or bottom of furnace body is provided with on the overflow support structure.Thereby when having avoided on base plate 1, opening overflow groove and having caused a large amount of overflow of silicon liquid very little, overflow groove can not satisfy the needs of overflow, to such an extent as to also have silicon liquid to flow out with the slit that is connected of side plate 2, and open the defective that overflow groove influences the work-ing life of base plate 1 too much from base plate 1.
In addition, in order to improve the crystalline quality of silicon material in the quartz crucible, some air channels 22 can be set at the upper limb of side plate 2, the effect of air channel 22 is the circulations that can quicken quartz crucible internal cooling gas, reduces the generation of crystallite, improves good article rate.
Only on base plate 1, drive overflow groove compared to existing technology, when the fluting that is brought causes a large amount of overflow of silicon liquid very little, overflow groove can not satisfy the needs of overflow, to such an extent as to also have silicon liquid to flow out with the slit that is connected of side plate 2 from base plate 1, and fluting influences the defective in the work-ing life of base plate 1 too much, the utility model is provided with the guiding groove 21 of several guiding overflow silicon liquid at side plate 2 lower rims, the position of this guiding groove 21 is corresponding with the overflow weir on the thermal field case bottom holding plates, when occurring crackle or silicon liquid Yin Gaowen from the overflow of quartz crucible top with convenient quartz crucible, can be under the guiding of guiding groove 21, overflow silicon liquid is in time flowed out from guiding groove 21, effusive silicon liquid can flow on the overflow cotton of bottom of body of heater through the overflow weir on the thermal field case bottom holding plates of guiding groove 21 belows or bottom of furnace body is provided with on the overflow support structure, better plays the effect of dredging silicon hydrorrhea stream.
The above only is a preferred embodiment of the present utility model; be not so limit claim of the present utility model; every equivalent structure or flow process conversion that utilizes the utility model specification sheets and accompanying drawing content to be done; or directly or indirectly be used in other relevant technical fields, all in like manner be included in the scope of patent protection of the present utility model.
Claims (7)
1. polycrystalline silicon ingot or purifying furnace crucible side plate overflow structure comprises: base plate and be placed on side plate around the described base plate is characterized in that the lower rim that described side plate lower end is connected with base plate is provided with some guiding grooves that are used to guide overflow silicon liquid.
2. overflow structure according to claim 1 is characterized in that, the shape of described guiding groove is at least a kind of in circular arc, square, the trapezoidal or rhombus.
3. overflow structure according to claim 1 is characterized in that, also comprises quartz crucible, and described quartz crucible is positioned on the described base plate; Described side plate is positioned at outside the sidewall of described quartz crucible.
4. overflow structure according to claim 1 is characterized in that, also comprises thermal field case bottom holding plates, is positioned at described floor below, and the position of corresponding described guiding groove is provided with overflow weir on the described bottom holding plates.
5. overflow structure according to claim 1 is characterized in that, described side sheet room connects by carbon carbon screw rod and nut or connects by graphite screw rod and nut.
6. overflow structure according to claim 1 is characterized in that the upper limb of described side plate is provided with some air channels.
7. according to each described overflow structure among the claim 1-6, it is characterized in that described guiding groove is one to 30.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201503584U CN202072800U (en) | 2011-05-12 | 2011-05-12 | Lateral plate overflowing structure for crucible of polycrystalline silicon ingot furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201503584U CN202072800U (en) | 2011-05-12 | 2011-05-12 | Lateral plate overflowing structure for crucible of polycrystalline silicon ingot furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202072800U true CN202072800U (en) | 2011-12-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011201503584U Expired - Lifetime CN202072800U (en) | 2011-05-12 | 2011-05-12 | Lateral plate overflowing structure for crucible of polycrystalline silicon ingot furnace |
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| CN (1) | CN202072800U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103981570A (en) * | 2014-06-04 | 2014-08-13 | 高佳太阳能股份有限公司 | Silicon liquid overflow alarm structure of polycrystalline silicon ingot furnace |
-
2011
- 2011-05-12 CN CN2011201503584U patent/CN202072800U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103981570A (en) * | 2014-06-04 | 2014-08-13 | 高佳太阳能股份有限公司 | Silicon liquid overflow alarm structure of polycrystalline silicon ingot furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: SHENZHEN GOLD STONE TECHNOLOGY CO., LTD. Free format text: FORMER NAME: GOLD STONE PRECISION TECHNOLOGY(SHENZHEN)CO., LTD. |
|
| CP03 | Change of name, title or address |
Address after: 518000, Shenzhen, Guangdong, Baoan District Fuyong Street on the south side of the first floor of Great Ocean Road 4, two floor East Patentee after: Shenzhen Gold Stone Technology Co., Ltd. Address before: 518000 Guangdong city of Shenzhen province Baoan District manhole Street third Jiao Sha Tau Tong industrial area ranked first, one to two Patentee before: Gold stone precision technology (Shenzhen) Co., Ltd. |
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| C53 | Correction of patent for invention or patent application | ||
| C56 | Change in the name or address of the patentee |
Owner name: SHENZHEN GOLD STONE TECHNOLOGY STOCK CO., LTD. Free format text: FORMER NAME: SHENZHEN GOLD STONE TECHNOLOGY CO., LTD. |
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| CB03 | Change of inventor or designer information |
Inventor after: Li Wenhong Inventor after: Hou Zhenhua Inventor after: Long Limei Inventor before: Long Limei |
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| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: LONG LIMEI TO: LI WENHONG HOU ZHENHUA LONG LIMEI |
|
| CP03 | Change of name, title or address |
Address after: Baoan District Songgang street, Shenzhen city 518105 Guangdong province with rich industrial zone safety run road No. 2 Patentee after: Shenzhen Gold Stone Technology Co., Ltd Address before: 518000, Shenzhen, Guangdong, Baoan District Fuyong Street on the south side of the first floor of Great Ocean Road 4, two floor East Patentee before: Shenzhen Gold Stone Technology Co., Ltd. |
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| CX01 | Expiry of patent term |
Granted publication date: 20111214 |
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| CX01 | Expiry of patent term |