CN202058689U - 一种用于等离子处理器的加热装置 - Google Patents
一种用于等离子处理器的加热装置 Download PDFInfo
- Publication number
- CN202058689U CN202058689U CN201120168930XU CN201120168930U CN202058689U CN 202058689 U CN202058689 U CN 202058689U CN 201120168930X U CN201120168930X U CN 201120168930XU CN 201120168930 U CN201120168930 U CN 201120168930U CN 202058689 U CN202058689 U CN 202058689U
- Authority
- CN
- China
- Prior art keywords
- temperature control
- control plate
- heat
- heater
- conducting block
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (8)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201120168930XU CN202058689U (zh) | 2011-05-25 | 2011-05-25 | 一种用于等离子处理器的加热装置 |
TW100222447U TWM434302U (en) | 2011-05-25 | 2011-11-28 | Heating device of plasma processor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201120168930XU CN202058689U (zh) | 2011-05-25 | 2011-05-25 | 一种用于等离子处理器的加热装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN202058689U true CN202058689U (zh) | 2011-11-30 |
Family
ID=45018655
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201120168930XU Expired - Lifetime CN202058689U (zh) | 2011-05-25 | 2011-05-25 | 一种用于等离子处理器的加热装置 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN202058689U (zh) |
TW (1) | TWM434302U (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103280416A (zh) * | 2013-05-31 | 2013-09-04 | 深圳市华星光电技术有限公司 | 一种热处理装置 |
CN104717817A (zh) * | 2013-12-12 | 2015-06-17 | 中微半导体设备(上海)有限公司 | 一种用于电感耦合型等离子处理器射频窗口的加热装置 |
CN113745082A (zh) * | 2020-05-28 | 2021-12-03 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置及其加热装置与工作方法 |
-
2011
- 2011-05-25 CN CN201120168930XU patent/CN202058689U/zh not_active Expired - Lifetime
- 2011-11-28 TW TW100222447U patent/TWM434302U/zh not_active IP Right Cessation
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103280416A (zh) * | 2013-05-31 | 2013-09-04 | 深圳市华星光电技术有限公司 | 一种热处理装置 |
CN103280416B (zh) * | 2013-05-31 | 2016-05-04 | 深圳市华星光电技术有限公司 | 一种热处理装置 |
CN104717817A (zh) * | 2013-12-12 | 2015-06-17 | 中微半导体设备(上海)有限公司 | 一种用于电感耦合型等离子处理器射频窗口的加热装置 |
CN113745082A (zh) * | 2020-05-28 | 2021-12-03 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置及其加热装置与工作方法 |
CN113745082B (zh) * | 2020-05-28 | 2023-10-31 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置及其加热装置与工作方法 |
Also Published As
Publication number | Publication date |
---|---|
TWM434302U (en) | 2012-07-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101834120B (zh) | 喷淋头和等离子体处理装置 | |
CN111477569B (zh) | 一种半导体设备中的加热装置及半导体设备 | |
CN100440422C (zh) | 具有动态温度控制的基片支架 | |
CN202651058U (zh) | 一种控制基座外缘聚焦环温度的组件 | |
TWI569023B (zh) | Temperature of the test apparatus and temperature control method of the adapter | |
CN101924017B (zh) | 基板加热单元和包含该基板加热单元的基板处理装置 | |
TWI611477B (zh) | 壓力控制熱管溫度控制板 | |
CN202058689U (zh) | 一种用于等离子处理器的加热装置 | |
TW200616139A (en) | Method and apparatus for controlling temperature of a substrate | |
JP2008244096A (ja) | 熱伝導シート及びこれを用いた被処理基板の載置装置 | |
CN103668073B (zh) | 去气腔室及物理气相沉积设备 | |
CN103374698A (zh) | 加热腔室以及等离子体加工设备 | |
CN108987323A (zh) | 一种承载装置及半导体加工设备 | |
CN106548917B (zh) | 调节等离子体刻蚀腔内器件温度的装置及其温度调节方法 | |
JP6088909B2 (ja) | 熱処理装置 | |
CN107768300A (zh) | 卡盘、反应腔室及半导体加工设备 | |
KR20210058973A (ko) | 온도 조절 장치 | |
CN103794527A (zh) | 静电卡盘加热方法及系统 | |
CN103000590A (zh) | 无底板功率模块 | |
CN201064074Y (zh) | 一种热管散热器 | |
CN102456599B (zh) | 支撑单元及具有支撑单元的衬底处理设备 | |
CN112582329B (zh) | 静电卡盘及半导体加工设备 | |
CN208791742U (zh) | 一种应用于立式硅片磁控溅射镀膜机的离子清洗电极 | |
KR20030082473A (ko) | 정전 흡착 스테이지 및 기판 처리 장치 | |
CN201966192U (zh) | 具有双接触面的静电吸盘 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Heating device for plasma processor Effective date of registration: 20150202 Granted publication date: 20111130 Pledgee: China Development Bank Co Pledgor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Registration number: 2009310000663 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20170809 Granted publication date: 20111130 Pledgee: China Development Bank Co Pledgor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Registration number: 2009310000663 |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20111130 |