CN202041317U - Electrode structure of NTC (Negative Temperature Coefficient) temperature sensor chip - Google Patents
Electrode structure of NTC (Negative Temperature Coefficient) temperature sensor chip Download PDFInfo
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- CN202041317U CN202041317U CN2011200798244U CN201120079824U CN202041317U CN 202041317 U CN202041317 U CN 202041317U CN 2011200798244 U CN2011200798244 U CN 2011200798244U CN 201120079824 U CN201120079824 U CN 201120079824U CN 202041317 U CN202041317 U CN 202041317U
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Abstract
The utility model discloses an electrode structure of an NTC (Negative Temperature Coefficient) temperature sensor chip, comprising a chip and electrode film layers, wherein one layer or two layers of transition layers are also arranged among the chip and the electrode film layers. The electrode structure of the NTC temperature sensor chip has higher density and resistance precision as well as uniform thickness, and is not influenced by the environment condition during use. In addition, migration of electrode ions can not occur, and the reliability and stability of the performance of the temperature sensor are greatly improved.
Description
Technical field
The utility model relates to a kind of NTC temperature sensor production structure design.
Background technology
Thermometer is the parameter that often needs test in the practical application, is fabricated onto semiconductor production from iron and steel, and a lot of processing procedures all will rely on the measurement of temperature to realize, so temperature sensor is the bridge between application system and the real world.The measurement of temperature is used very extensive, not only procedure for producing needs temperature control, some electronic product also needs they self temperature is measured, want the temperature of monitoring CPU as computing machine, motor controller will be known temperature of power drive IC or the like, and the sensor kind that is used for measuring temperature is a lot, and thermal resistor is exactly one of them.Many thermistors have negative temperature coefficient (NTC), that is to say that its resistance value can raise when temperature descended.In all passive type temperature sensors, the sensitivity of thermistor (be the every variation of temperature once time changes in resistance) is the highest, is that industry institute generally adopts by thermistor as temperature sensor therefore.
NTC themistor has high sensitivity and lower price, so suitable to especially temperature sensor.In-55 ℃~+ 300 ℃ temperature range, with NTC themistor or NTC thermistor chip temperature sensor as core parts---be called for short the NTC temperature sensor, in industrial automation, instrument and meter, automotive electronics, medical electronics, household electrical appliance, space flight and aviation, fields such as computing machine are widely used, and only household electrical appliance just have: domestic air conditioning, refrigerator, refrigerator, water heater, water dispenser, warm-air drier, dish-washing machine, disinfection cabinet, washing machine, dryer, oven, electromagnetic oven, soy bean milk making machine, toaster, charger for mobile phone, charger for electric bicycle, rechargeable battery, Electronic desk calendar etc.
This NTC temperature sensor adopts NTC themistor or NTC themistor chip as core parts, can make all styles of according to the difference of its purposes.The sensing head structural difference that the main difference of existing various NTC temperature sensors is to be enclosed with NTC themistor or NTC themistor chip is very big, but no matter contour structures has great difference, its extension line overwhelming majority all is PVC or resistant to elevated temperatures Teflon insulated conductor, thermal resistor chip electrode structure is generally printed one deck electrode film at chip surface, as the Ag electrode film.The environmental baseline that this series products is used (humidity and corrosive gas) influence, the Electrode Ag ion moves, and causes properties of product to worsen, and reliability and stability descend.
Summary of the invention
The utility model provides a kind of have higher density and resistance accuracy, the uniform NTC temperature sensor chip of thick book electrode structure, the environmental influence that this NTC temperature sensor chip electrode structure is not used, the electrode ion does not move, and greatly improves the reliability and stability of temperature sensor performance.
The present invention is realized by the following technical programs:
NTC temperature sensor chip electrode structure comprises chip and electrode thin film layer, also is provided with transition bed between described chip and the electrode thin film layer, and described transition bed is one deck or two-layer.
Described transition bed is two-layer, and the transition bed of described next-door neighbour's chip is the chromium thin film layer, and the transition bed of described next-door neighbour's electrode thin film layer is a copper film layer
Described one deck or two-layer transition bed and electrode thin film layer are that chip is placed the magnetron sputtering apparatus vacuum chamber, adopt quality purity be 99.99% different metal as target, magnetron sputtering deposition forms.
A kind of NTC temperature sensor chip of the utility model electrode structure, comprise chip and electrode thin film layer, also be provided with transition bed between described chip and the electrode thin film layer, described transition bed forms by magnetron sputtering deposition, have higher density and resistance accuracy, thick book is even, greatly improves the reliability and stability of temperature sensor performance.
The beneficial effects of the utility model: the thick book of electrode film is even, and the density height, has greatly improved the product resistance accuracy.
Description of drawings
Fig. 1 implements 1 structural representation for the utility model.
Fig. 2 implements 2 structural representation for the utility model.
Sequence number among the figure: 1, chip, 2, electrode thin film layer, 3, transition bed.
Embodiment
The utility model is described in further detail below in conjunction with the drawings and specific embodiments.
Implement 1: according to shown in Figure 1, a kind of NTC temperature sensor chip electrode structure, comprise chip 1, transition bed 3 and electrode thin film layer 2, described transition bed 3 is two-layer, described NTC temperature sensor chip 1 is a semiconductor sensitive ceramic substrate, described electrode thin film layer 2 is the gold thin film layer, the transition bed 3 of described next-door neighbour's chip 1 is the chromium thin film layer, the transition bed 3 of described next-door neighbour's electrode thin film layer 2 is a copper film layer, described chromium thin film layer and copper film layer transition bed 3 and electrode thin film layer 2 are that chip 1 is placed the magnetron sputtering apparatus vacuum chamber, adopting quality purity successively is 99.99% crome metal, copper and gold are as target, and magnetron sputtering deposition forms.The utility model thickness of electrode<0.8 μ m, and density height, thick book is even, error<± 10%, the product resistance accuracy is brought up to 0.5%--1%.The environmental baseline that electrode thin film layer is not used (humidity and corrosive gas) influence, the electrode ion does not move, the reliability and stability of greatly enhancing product performance.
Implement 2: according to shown in Figure 2, a kind of NTC temperature sensor chip electrode structure, comprise chip 1, transition bed 3 and electrode thin film layer 2, described NTC temperature sensor chip 1 is a semiconductor sensitive ceramic substrate, described electrode thin film layer 2 is the gold thin film layer, described transition bed 3 is the chromium thin film layer, described chromium thin film layer and electrode thin film layer 2 are that chip 1 is placed the magnetron sputtering apparatus vacuum chamber, adopt successively quality purity be 99.99% crome metal and gold as target, magnetron sputtering deposition forms.
Embodiment is just for the ease of understanding the technical solution of the utility model; do not constitute restriction to the utility model protection domain; every interior any simple modification, equivalent variations and modification of perhaps according to technical spirit of the present utility model above scheme being done that does not break away from technical solutions of the utility model all still belongs within the utility model protection domain.
Claims (3)
1.NTC the temperature sensor chip electrode structure comprises chip ⑴ and electrode thin film layer ⑵, it is characterized in that: also be provided with transition bed ⑶ between described chip ⑴ and the electrode thin film layer ⑵, described transition bed ⑶ is one deck or two-layer.
2. NTC temperature sensor chip electrode structure according to claim 1, it is characterized in that: described transition bed ⑶ is two-layer, the transition bed ⑶ of described next-door neighbour's chip ⑴ is the chromium thin film layer, and the transition bed ⑶ of described next-door neighbour's electrode thin film layer ⑵ is a copper film layer.
3. NTC temperature sensor chip electrode structure according to claim 1 and 2, it is characterized in that: described one deck or two-layer transition bed ⑶ and electrode thin film layer ⑵ place the magnetron sputtering apparatus vacuum chamber with chip ⑴, adopt quality purity be 99.99% different metal as target, magnetron sputtering deposition forms.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN2011200798244U CN202041317U (en) | 2011-03-24 | 2011-03-24 | Electrode structure of NTC (Negative Temperature Coefficient) temperature sensor chip |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN2011200798244U CN202041317U (en) | 2011-03-24 | 2011-03-24 | Electrode structure of NTC (Negative Temperature Coefficient) temperature sensor chip |
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CN202041317U true CN202041317U (en) | 2011-11-16 |
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CN2011200798244U Expired - Fee Related CN202041317U (en) | 2011-03-24 | 2011-03-24 | Electrode structure of NTC (Negative Temperature Coefficient) temperature sensor chip |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108147790A (en) * | 2017-12-26 | 2018-06-12 | 珠海爱晟医疗科技有限公司 | Medical NTC heat sensitive chips of the high precision high stability containing gold and preparation method thereof |
CN112611473A (en) * | 2020-12-02 | 2021-04-06 | 句容市双诚电子有限公司 | Temperature sensor with NTC thermosensitive chip and preparation process thereof |
-
2011
- 2011-03-24 CN CN2011200798244U patent/CN202041317U/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108147790A (en) * | 2017-12-26 | 2018-06-12 | 珠海爱晟医疗科技有限公司 | Medical NTC heat sensitive chips of the high precision high stability containing gold and preparation method thereof |
CN108147790B (en) * | 2017-12-26 | 2021-04-30 | 珠海爱晟医疗科技有限公司 | Medical gold-containing high-precision high-stability NTC (negative temperature coefficient) thermosensitive chip and manufacturing method thereof |
CN112611473A (en) * | 2020-12-02 | 2021-04-06 | 句容市双诚电子有限公司 | Temperature sensor with NTC thermosensitive chip and preparation process thereof |
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Granted publication date: 20111116 Termination date: 20150324 |
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