CN202034383U - Amorphous silicon film solar cell module - Google Patents
Amorphous silicon film solar cell module Download PDFInfo
- Publication number
- CN202034383U CN202034383U CN2010202718983U CN201020271898U CN202034383U CN 202034383 U CN202034383 U CN 202034383U CN 2010202718983 U CN2010202718983 U CN 2010202718983U CN 201020271898 U CN201020271898 U CN 201020271898U CN 202034383 U CN202034383 U CN 202034383U
- Authority
- CN
- China
- Prior art keywords
- film
- solar cell
- film solar
- crystal silicon
- back reflector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The present utility model discloses an amorphous silicon film solar cell module which is composed of a TCO film (2) deposited on a glass substrate (1), an amorphous silicon film (3), a back reflecting electrode (9), a photographic film PVB (7), a rear panel glass (8), a junction box (10), and a leading-out terminal (12). The module is characterized in that the back reflecting electrode (9) is a composite back reflecting electrode which is formed by depositing transparent conductive oxide (4), metal silver (5) and metallic titanium (6) successively. Compared with the prior art, the module has large unit power and high transition efficiency.
Description
Technical field
The utility model relates to a kind of Thinfilm solar cell assembly, the non-crystal silicon thin-film solar cell component that specifically a kind of back electrode is optimized, and this product conversion efficiency height is applicable to building and power station.
Background technology
Because energy crisis and people are to the pay attention to day by day of environmental protection in recent years; various countries implement, promote green energy resources such as wind energy, solar energy, water energy one after another; wherein solar energy receives much concern as inexhaustible, the nexhaustible energy of the mankind; some countries implement government to solar power generation and support and subsidy, thereby promote the large-scale development and the application of solar energy generation technology.The amorphous silicon membrane battery is low because of its cost, low light level performance is good, be easy to combine with building, do not produce waste residue, waste water, waste gas in the power generation process, noise-less pollution, do not waste generating under the additional space, can sell advantages such as power office with unnecessary electricity, present more and more vast potential for future development.
Known amorphous silicon membrane battery, its back electrode generally adopts vacuum evaporation or magnetron sputtering aluminium film made, thickness only has thousands of dusts, one micron of less than, therefore battery requires highly to uniformity of film, and it is big to have an equipment investment, the manufacturing cost height, the aluminium film contacts insecure with transparency electrode, shortcomings such as electric performance stablity difference.Adopt silver as back electrode, though its resistivity is low, and the polarization effect of introducing when tilting to use is also minimum, and its cost is than the aluminium height.In addition, the transparent conductive oxide of early stage back electrode (TCO) film adopts nesa coating (ITO) more, but because the phosphide atom in the ITO film spreads in silicon materials easily, and the ITO film has stronger absorption again to the solar spectrum near infrared region, though the research of GZO (ZnO:Ga) just began than ITO in about late 10 years, but the conductivity of GZO has reached the level of ITO, and the Zn among the GZO is the abundant and cheap materials of reserves, therefore becomes the nesa coating that has competitiveness in the thin-film solar cells.
Summary of the invention
The purpose of this utility model is to want to provide a kind of improved non-crystal silicon thin-film solar cell component, and the more existing non-crystal silicon thin-film solar cell component of this non-crystal silicon thin-film solar cell component is compared, and unit power is big, conversion efficiency is high.
For realizing that the technical scheme that above-mentioned purpose of the present utility model adopts is, a kind of non-crystal silicon thin-film solar cell component, contain the TCO film, amorphous silicon membrane, back reflector, film PVB, back-panel glass, terminal box and the leading-out terminal that are deposited on the glass substrate, its design feature is that described back reflector is compound back reflector, and this compound back reflector is deposited in turn by transparent conductive oxide, argent, Titanium (GZO/Ag/Ti) and forms.
The aggregate thickness that the transparent conductive oxide of described compound back reflector, argent, Titanium (GZO/Ag/Ti) are three layers is 100～500nm.The thickness of its each layer is optimized design according to the principle of interference of multilayer optical film, makes the absorptivity minimum of back electrode to light, and it is maximum that reflectivity reaches.
Described transparent conductive oxide (GZO) is the Ga that mixes among the ZnO.
The TCO film that is deposited on the glass substrate is a transparent conductive oxide film, can adopt SnO
2, at least a in ITO or the ZnO film.
The utility model is drawn by laser and is carved TCO film, amorphous silicon membrane, back reflector, forms the battery sheet, connects between each battery sheet, and output voltage and output current in the spacing of its single battery sheet and the effective power generation region can be adjusted.
The utility model passes through magnetron sputtering technique, sputter transparent conductive oxide, argent and Titanium, and three layers aggregate thickness is 100～500nm, thereby makes compound back reflector.
Described film PVB is a polyvinyl butyral resin, by the PVB film battery sheet and back-panel glass is bondd.
The thickness of glass substrate and back-panel glass is generally 3.0～8.0mm, can regulate on demand.
The advantages such as the utility model is low except the cost with non-crystal silicon thin-film solar cell component, unit power big, energy-conserving and environment-protective, because its back reflector has adopted three layers of structure that deposits in turn of GZO/Ag/Ti, make non-crystal silicon thin-film solar cell component have unique photosensitivity, absorptivity height to light, requirement to setting angle is lower, and its whole energy output is more.Adopt compound back reflector, the light absorption of the i layer of amorphous silicon is strengthened, thereby increase short circuit current, improve the transformation efficiency of battery, and further attenuate i layer, improve the stability of battery.Wherein, the GZO layer in the compound back reflector is the Ga that mixes in ZnO, plays the effect that the barrier metal electrode poisons the n+ tunic on the one hand, and promptly barrier metal back electrode Ag improves interface and battery performance to the diffusion of the n+ of amorphous silicon layer; Help the Ag electrode on the other hand and reduce light absorption enhancing reflex; Doped gallium in zinc oxide in addition can improve the conductivity of film effectively, improves film characteristics.Adopt silver as the back electrode intermediate layer, mainly contain two effects, the firstth, as back electrode, except back reflector is had the minimum resistivity, most importantly it can reflect the light that is not absorbed by silicon (Si) to the reflection effect of light, increases the light path of light at inside battery, increase the absorption efficiency of light, and then improve the conversion efficiency of battery.Though silver-colored cost is than the aluminium height, its resistivity is low, and the polarization effect of introducing when tilting to use is also minimum.The Ti layer except the effect that protection Ag electrode is arranged, has also played effect energetically to whole thin layer to reflection of light as the back electrode outermost layer.
(this combination back reflector layer of 100～500nm) can obtain good adhesive, light reflectivity, electrode conductance rate, and the gas cut erosion of not making moist of protection silver surface, and because the reflectivity loss that INFRARED ABSORPTION caused reaches minimum to use optimum film thickness.It is interference theory according to film that the compound back reflector of non-crystal silicon solar cell increases anti-principle, thereby increases the propagation path of light in film, increases the absorption efficiency of p-i-n layer to light.This each layer thickness of compound back reflector can be optimized adjustment according to the thickness of electrode, each layer of amorphous silicon before the TCO, to reach best photoelectricity effect.
Description of drawings
Fig. 1 is the structural representation of a kind of embodiment of the utility model.
Fig. 2 is a terminal box installation site schematic diagram among Fig. 1.
Embodiment
For describing the utility model in detail, below in conjunction with the drawings and specific embodiments the utility model is described further, yet described embodiment should not explain in the mode of restriction.
As shown in Figure 1, a kind of non-crystal silicon thin-film solar cell component, contain glass substrate 1 and be deposited on its surperficial TCO film 2, amorphous silicon membrane 3, back reflector 9, PVB film 7, back-panel glass 8, terminal box 10 and leading-out terminal 12, described back reflector 9 is that three layers aggregate thickness is 100～500nm by the compound back reflector of transparent conductive oxide 4, argent 5, three layers of formation of Titanium 6 (GZO/Ag/Ti).
A kind of manufacture method of the present utility model is as follows:
At first, select glass substrate 1 for use, glass substrate 1 adopts the thick high light transmittance float glass of 3-4mm, to guarantee its high daylighting, to see through efficient;
Secondly, adopt conventional method deposition TCO film 2 on glass substrate 1, the TCO film adopts transmitance and the high SnO of conductivity
2, at least a among ITO or the ZnO, perhaps directly adopt the glass substrate that deposits the TCO film;
Once more, using plasma strengthens each layer of p-i-n that deposition of amorphous silicon films 3 is installed in chemical vapour deposition (CVD) (PECVD) on the TCO film;
Thereupon, magnetron sputtering technique is adopted on surface at amorphous silicon membrane 3, each layer of the compound back reflector 9 of sputter, also i.e. sputter GZO, Ag, each layer of Ti in turn, three layers aggregate thickness between 100～500nm, as: transparent conductive oxide is that 190nm, argent are that 200nm, Titanium are 20nm;
Respectively go on foot in the process of operation at deposition TCO film, amorphous silicon and the compound back reflector of sputter, pass through laser cutting according to a conventional method respectively, to form battery sheet 11, series connection mutually between each battery sheet 11, output voltage and output current in the spacing of its single battery sheet 11 and the effective power generation region can be adjusted;
Then, the PVB film 7 with high permeability and adhesion strength bonds battery sheet 11 and back-panel glass 8;
At last, draw terminals, connect terminal box 10, and draw binding post 12 from terminal box from back-panel glass 8 position intermediate.The electric current positive pole by TCO thin layer, negative pole by drawing in the compound back reflector layer, connect via the bypass diode circuit in the terminal box 10, drawn the positive and negative electrode of circuit respectively by the leading-out terminal 12 of terminal box 10, terminal box 10 is bonded on the back-panel glass 8 of battery component by fluid sealant.
Non-crystal silicon thin-film solar cell component described in the utility model carries out series and parallel formation photovoltaic system by the leading-out terminal 12 of terminal box 10, can build electric power station system, also can be used for photoelectric curtain wall.
Various technology described in the utility model such as magnetron sputtering etc. are all the known general knowledge of one of ordinary skilled in the art, no longer heavily chat here.
Claims (7)
1. non-crystal silicon thin-film solar cell component, contain the TCO film (2), amorphous silicon membrane (3), back reflector (9), film PVB (7), back-panel glass (8), terminal box (10) and the leading-out terminal (12) that are deposited on the glass substrate (1), it is characterized in that described back reflector (9) is compound back reflector, this compound back reflector is deposited in turn by transparent conductive oxide (4), argent (5), Titanium (6) and forms.
2. according to the described non-crystal silicon thin-film solar cell component of claim 1, the aggregate thickness that it is characterized by (6) three layers of transparent conductive oxide (4), argent (5), the Titaniums of described compound back reflector is 100～500nm.
3. according to the described non-crystal silicon thin-film solar cell component of claim 1, it is characterized by the described TCO film (2) that is deposited on the glass substrate (1) is transparent conductive oxide film, adopts SnO
2, at least a in ITO or the ZnO film.
4. according to the described non-crystal silicon thin-film solar cell component of claim 1, it is characterized by and adopt laser to draw TCO film (2) at quarter, amorphous silicon membrane (3), compound back reflector (9), form battery sheet (11), series connection mutually between each battery sheet (11), output voltage and output current in the spacing of its single battery sheet (11) and the effective power generation region can be adjusted.
5. according to claim 1 or 2 described non-crystal silicon thin-film solar cell components, it is characterized by the employing magnetron sputtering technique, sputter transparent conductive oxide (4), argent (5), each layer of Titanium (6) are made compound back reflector (9).
6. according to the described non-crystal silicon thin-film solar cell component of claim 1, it is characterized by described film PVB (7) is polyvinyl butyral resin.
7. according to the described non-crystal silicon thin-film solar cell component of claim 4, it is characterized by battery sheet (11) and bond with back-panel glass (8) by film PVB (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202718983U CN202034383U (en) | 2010-07-22 | 2010-07-22 | Amorphous silicon film solar cell module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202718983U CN202034383U (en) | 2010-07-22 | 2010-07-22 | Amorphous silicon film solar cell module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202034383U true CN202034383U (en) | 2011-11-09 |
Family
ID=44896671
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010202718983U Expired - Fee Related CN202034383U (en) | 2010-07-22 | 2010-07-22 | Amorphous silicon film solar cell module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202034383U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102628164A (en) * | 2012-04-27 | 2012-08-08 | 保定天威薄膜光伏有限公司 | Method for controlling low electrical property and appearance defect of solar battery module |
-
2010
- 2010-07-22 CN CN2010202718983U patent/CN202034383U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102628164A (en) * | 2012-04-27 | 2012-08-08 | 保定天威薄膜光伏有限公司 | Method for controlling low electrical property and appearance defect of solar battery module |
| CN102628164B (en) * | 2012-04-27 | 2013-06-12 | 保定天威薄膜光伏有限公司 | Method for controlling low electrical property and appearance defect of solar battery module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102360087B1 (en) | Color film applied solar module and manufacturing method thereof | |
| EP2054940A1 (en) | Front contact with intermediate layer(s) adjacent thereto for use in photovoltaic device and method of making same | |
| CN103515484A (en) | Textured transparent conductive thin film with periodic structure and preparation method thereof | |
| CN201402813Y (en) | Thin-film solar cell with high photon-to-electron conversion efficiency | |
| CN101752453A (en) | Preparation method of glass-substrate double-side CIGS thin film solar cell module | |
| US20110303282A1 (en) | Solar glass and manufacturing method thereof | |
| CN101295743A (en) | Thin film, its forming method and solar battery with the same | |
| CN101924152A (en) | Thin-film solar cell and manufacture method thereof | |
| CN101556977A (en) | Film silicon photovoltaic device and manufacturing method, back electrode and photovoltaic component thereof | |
| CN202034383U (en) | Amorphous silicon film solar cell module | |
| CN101777588B (en) | Light scattering multilayered structure and manufacturing method thereof | |
| CN101924153B (en) | Thin film solar cell and manufacture method thereof | |
| CN105023958A (en) | CIGS (Copper Indium Gallium Selenide)-based thin-film solar cell and manufacturing method thereof | |
| CN106024919B (en) | Amorphous silicon thin-film solar cell and its manufacture method | |
| CN102064212B (en) | Amorphous silicon film solar cell and preparation method thereof | |
| CN201222505Y (en) | Solar battery structure | |
| CN102280503A (en) | Transmitting-type thin film solar battery | |
| CN114695585A (en) | Photovoltaic tile assembly and preparation method thereof | |
| CN103280496A (en) | Method for preparing crystalline silicon heterojunction/microcrystalline silicon thin film laminated photovoltaic cell | |
| CN103390679A (en) | Thin film solar cell and manufacturing method thereof | |
| CN102956756A (en) | Manufacturing method and structure of solar battery | |
| CN102587545A (en) | Photovoltaic building glass curtain wall component | |
| CN101719520A (en) | Transparent conducting electrode film solar cell | |
| CN201838605U (en) | Light-permeable type amorphous-silicon thin-film solar battery pack for agriculture greenhouse | |
| CN201877444U (en) | Automobile sunroof glass capable of generating electricity |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111109 Termination date: 20160722 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |